JPS58199619A - Manufacture of thin metallic film - Google Patents

Manufacture of thin metallic film

Info

Publication number
JPS58199619A
JPS58199619A JP8166882A JP8166882A JPS58199619A JP S58199619 A JPS58199619 A JP S58199619A JP 8166882 A JP8166882 A JP 8166882A JP 8166882 A JP8166882 A JP 8166882A JP S58199619 A JPS58199619 A JP S58199619A
Authority
JP
Japan
Prior art keywords
film
metal
metallic film
thin metallic
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8166882A
Other languages
Japanese (ja)
Inventor
Masato Sugiyama
杉山 征人
Takashi Tomie
富江 崇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teijin Ltd
Original Assignee
Teijin Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teijin Ltd filed Critical Teijin Ltd
Priority to JP8166882A priority Critical patent/JPS58199619A/en
Publication of JPS58199619A publication Critical patent/JPS58199619A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0005Separation of the coating from the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To manufacture an extremely thin metallic film, by forming a metallic film on an organic polymer film by a physical depositing method, and thereafter, melting the film. CONSTITUTION:A thin metallic film is formed by depositing metallic particles on an organic polymer film under vacuum by a physical depositing method such as a vacuum vapor-depositing method, an ion plating method, a sputtering method, etc. Subsequently, the polymer film is dissolved by use of a suitable solvent, and an extremely thin metallic film of about 0.02-10mu is manufactured.

Description

【発明の詳細な説明】 本発明は金属薄膜の製造法に関する。さらに−シ<は、
0.02ノh至1O1一度の厚さの非常に薄い金属薄膜
の新規な製造法に@する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing thin metal films. Furthermore, −shi< is
A new method for producing extremely thin metal films with a thickness of 0.02 nm to 1 O1 is proposed.

金属薄膜の製造法とし【は押出し、圧鴫、引鎗抜III
造などの方法により金−塊な砿々tC薄く引き伸ばす方
法が普通である。しかしなから、これらの方法で得られ
た金属の薄膜は欽卆 l・・声以上の厚みが普通であり、それ以Eの金属薄−
としては金、銀、端、フル4ニウムなととくに延性にg
む金属以外には得ることが1蝙−であった。これらの金
属でもその厚さを数拳 10jあるいはそれ以下にするには特殊な方法たとえば
板金成蓋といった方法で行わねばならなかった。しかし
ながらこれらの方法によって作られた薄膜の厚さは一様
でなく、又板金の過程で金属薄膜が破断したりして、大
面積の金属薄膜を得ることはできなか一つだ。
The manufacturing methods for metal thin films include extrusion, pressing, and hammering III.
The usual method is to stretch the gold ingot into a thin layer using a method such as making. However, the metal thin films obtained by these methods are usually thicker than the thickness of the metal thin film E.
As for gold, silver, edge, full quaternium, especially ductile g
There was only one thing that could be obtained other than metals. Even with these metals, in order to reduce the thickness to several 10j or less, special methods such as sheet metal forming had to be used. However, the thickness of the thin films produced by these methods is not uniform, and the metal thin films may break during the sheet metal processing process, making it impossible to obtain large-area metal thin films.

さらKCれらの金属塊な出暢点として薄く引き延ばすこ
れらの方法のいずれKしてもai−下の金属薄膜を得る
ことはできなかった。会嬌薄lIを得る真の特殊な方法
としてプラスチックフィル^上に金属の薄膜を真9篇着
などの物理的堆積法で形成し、しかるのちに機械的に#
す方法がある。たとえaz、ポリニスナルフィルム上K
Tiを数to ン乃盃歇1007o厚さに纏着し、しか
るのちにポリエステルフィルムから引き剥すことによっ
てTi薄IFを婦たり、あるいは高分子フィルム上に形
成した組−Cr+ スTンレス、ム1などの上に接着剤
を投げ匍の物体上に転写するスタンピングホイルなどが
知られて一1食。
Moreover, it was not possible to obtain an ai-lower metal thin film using any of these methods in which the metal mass was stretched thinly as a point of eruption. A truly special method for obtaining a thin film is to form a thin metal film on a plastic film using a physical deposition method such as 9-layer deposition, and then mechanically deposit it on the plastic film.
There is a way. Even az, K on polynisnal film
A Ti thin IF can be obtained by applying Ti to a thickness of several tons and then peeling it off from a polyester film, or by forming a Ti thin IF on a polymer film. Stamping foil, etc., which is transferred onto an object by pouring adhesive onto it, is well known.

しかしながら、これらの方法は一旦形威した金属膜を高
分子フィルムから剥す必要があるため高分子フィルムと
の接着性の眼られた金属か、あるいは島剥性にするため
KA分子フィル人に前もって何らかの処理、たとえば剥
一層のコーティングなどを行うことが必要であった。
However, these methods require the metal film to be peeled off from the polymer film once it has formed, so the metal must be adhesive to the polymer film, or the KA molecule film must be prepared in some way in advance to make it removable. It was necessary to perform treatments, such as coating with a release layer.

本褪明者らは、これらの金属薄膜製造法の欠点を解決す
るために鋭意研究した結果以下の発@に到達した。すな
わち1本発明は有磯高分子フィルム上に物場的堆積法で
金属IIIを形成したのち鍍有機高分子フィルムを溶解
することを特徴とする金属薄膜の製造法である。
As a result of intensive research to solve the drawbacks of these metal thin film manufacturing methods, the inventors arrived at the following findings. That is, one aspect of the present invention is a method for producing a metal thin film, which is characterized in that metal III is formed on an aiso polymer film by an in-situ deposition method, and then the coated organic polymer film is dissolved.

本発−でいう有−高分子フィルムは、そ−)上に物場的
堆積法で金員膜を形成し5る−のであり【、かつ特定の
IIMK#l5iTIIilなものであればよい、かか
るam鳥分子フィルムの例とし一〇は、たとえばポリエ
チレンテレフタレート、ポリイミド、ボリア1ド、ポリ
プロピレン、ポリカーボネート、ポリスルフォン、ポリ
エチレン。
The polymeric film referred to in the present invention is one on which a metal film is formed by an in-situ deposition method, and it may be of a specific type. Examples of am bird molecule films are polyethylene terephthalate, polyimide, boria 1, polypropylene, polycarbonate, polysulfone, and polyethylene.

)す7セテート、塩化ビニル、ポリスチレン。) Su7 acetate, vinyl chloride, polystyrene.

ポリビニルアルコール、塩酸ゴムフィルム、ナイロンな
どのフィルムがある。物瑠的堆積法が運用されるために
は、真空中でのガス放出が少いこと、熱に対しである@
度の耐力な持つことが必要であり、通常はポリエステル
、ポリプロピレン、ポリカーボネート、ナイロンフィル
ムが好んで囲いられる。また−の見地からはこれらのフ
ィルムは特定のIII剤KIN解可能であることが必要
であり、かつ金属薄l[tおかさないことが必要である
。−毅KMどすべての金属はフィルムを濤絣する有機溶
剤に安定で轡る。フィルムとIIIIIa#)lffi
合せの一例を1llK示す、フィルムと#I#Lとの臘
合(はこれらKtil定される−のではなく、1合#I
織ヤ変成したものであってもよいことはいうまでもない
Films include polyvinyl alcohol, hydrochloric acid rubber film, and nylon. In order for the MONORU deposition method to be operational, it is necessary that there is little gas release in vacuum and that it is resistant to heat.
Polyester, polypropylene, polycarbonate, and nylon films are usually preferred. Also, from a - point of view, these films need to be able to be dissolved in a specific III agent, and need not be susceptible to metal thinning. - All metals, such as KM, are stable in the organic solvent used to form a film. Film and IIIa#)lffi
An example of the combination is 1llK, where the combination of the film and #I#L (is determined by these Ktil), but not the combination of the film and #I#L.
Needless to say, it may be a modified weaving material.

表1 フィルムと溶剤 また、フィルムを完全KJII1mK嬉かす必要ρ;な
い場合もある。すなわち#I削によりフィルムが膨満L
1きわめて容aKフィルムよりm14mをひきはがすこ
とが可纏な状ll1IAKなる場合41J)いので、航
十廁諷の比較的厚いフィルムな用いる時はこのような膨
満状@KL−ておいてひきはρ−せばよい。
Table 1 Films and Solvents There may also be no need to prepare the film completely. In other words, the film swells due to #I cutting.
1) It is extremely difficult to peel off m14m from a K film (41J), so when using a relatively thick film like this, it is difficult to peel off the bulge like this when using a relatively thick film. ρ−.

以上の条件tみたすフィルムとして中でもポリエステル
フィルムが11に4h好ましい。
Among the films that meet the above condition t, polyester films are preferred in 11 and 4h.

本発明でいう物場的堆積法とは、真空島層法。The physical deposition method used in the present invention is a vacuum island layer method.

イオンプンーテイ/グ法、スバタリング法などいわゆる
10  Torr以下の真空下で金属粒子を基板上に堆
積して金属薄膜&−形成する方法ないう、かかる方法で
形成された金属薄膜の厚さは、膜形成適度9時間等を謂
1rることKより任意の厚さにすることができる。一般
に金属は、数11i1−100ム位の厚さで連!l!−
となるが、金属薄膜の支持体であるフィルムを溶解した
場合、金Ill属厚があまりに薄い場合には連続性が崩
れ楊度以上の厚さにする必−がある。かかる方法で得ら
れたji!IJI11−は?jl−的A度が弱いため単
alCはその膚状を保持することは1峻であり、支持基
体であ6.4分子フィルムな#4Lに鹸剤中に浮遊した
mな仙の支持&体上に乗せるか、あるいは金棒などを利
用してすくいとることが必要となる。金1111111
1ある楊度連−した形−で琳独に、たとえば薄帯としc
着さとるためには畜らに金属膜厚t−厚くする必要があ
り、数1000ム以上が必要である。
A method of depositing metal particles on a substrate under a vacuum of 10 Torr or less to form a metal thin film, such as the ion punching method and the sputtering method. The thickness can be adjusted to any desired thickness after 9 hours or the like. Generally, metals have a thickness of several 11 μm to 100 μm. l! −
However, when the film that is the support for the thin metal film is melted, if the thickness of the gold metal is too thin, the continuity will be disrupted, and the thickness must be greater than 100%. ji obtained by this method! What about IJI11-? Due to its weak A degree, it is difficult for single AlC to maintain its skin shape, and the support and body of the m-shaped body suspended in the sapon on #4L, a 6.4-molecular film, is the supporting substrate. You will need to put it on top or use a metal rod to scoop it out. Gold 1111111
1. In a certain form of yangdu, for example, as a thin strip, c.
In order to achieve this, it is necessary to increase the metal film thickness by t, which is several thousand micrometers or more.

かかる方法で製造可縮な金属薄膜の檜艶は一分子フイル
ム上に物場堆積法で形成できるものであれば何でもよく
、又2種以上の合金であってもさしつかえない、また連
続膜な形成するものであれば、フィルム上に形成するべ
*#M賀はセラミツタなどの無機化合物で慶、つても、
又基材もフィルムの形部でなくても本方法が適用できる
ことは明らかである。
The metal thin film that can be produced by this method may be of any material as long as it can be formed on a single molecule film by an in-situ deposition method, or it may be an alloy of two or more types, or it may be formed as a continuous film. If it is to be used, it should be formed on the film.
Furthermore, it is clear that the present method can be applied even if the base material is not a film shape.

以下本発明な実施例に基き説明する。The present invention will be explained below based on embodiments.

実施例1 2S?犀のポリエステルフィルム上しンク゛半トーンス
パッタリング法で約5GOOAの犀さKCog4t−形
成した。スパッタリング条件は、Arガス圧2x1o 
 Torr、  スパッタJ ME 1 (100A/
分である。 Co−はポリエステルフィルム上に強く接
着し、@10−の屈曲を繰り返し−CもCo11Ia面
にひび割れが生じたものり軸れることはなかった。
Example 1 2S? A rhinoceros KCog4t of about 5 GOOA was formed on a rhinoceros polyester film by half-tone sputtering method. The sputtering conditions are Ar gas pressure 2x1o.
Torr, Sputter J ME 1 (100A/
It's a minute. Co- was strongly adhered to the polyester film, and the bending of @10- was repeated, and although cracks were formed on the Co11Ia surface of -C, it did not peel off.

このフィルムなオルツクpμフェノールに3時間浸fR
L、ポリエステルフィルムを溶解し500Oム厚のCo
薄膜を得た。
This film was immersed in Ortsk pμ phenol for 3 hours.
L, 500 um thick Co by melting polyester film
A thin film was obtained.

貞織例2 12μ厚のポリエステルフィルム上にマグネトロンスパ
ッタ法で約2.1 :7分の速度で約2s’1)18さ
にムisを形成した。このフィルムk)タフレゾールと
6塩化エタンの1 1fi合嬉液KIIIIL、ポリエ
ステルフィルム41′溶解し°〔AJWilll&−得
た。
Tetraori Example 2 On a polyester film having a thickness of 12 μm, a layer of about 2 s'1) was formed by magnetron sputtering at a speed of about 2.1:7 minutes. This film k) 1 1 combination of Taffresol and hexachloroethane KIIIL, polyester film 41' was dissolved and obtained.

喪厖f11 ÷ 5.61のポリニス1ルフイルム上K N1j’eM。Mouku f11 ÷ 5.61 Polynis 1 Le Film K N1j'eM.

(Niニア1vt%、Fa:18wt%+ Mu : 
4 yL%’1膜tスパッター法で約0.6μ通の厚さ
に1けた。
(Ni near 1vt%, Fa: 18wt% + Mu:
A 4yL%'1 film was formed to a thickness of about 0.6 μm by t sputtering.

その1IkWcフイルムtへ千すフル:4−一でラブル
パノールで#mL、NiF@Ma ill k祷た。f
iNiFaM。
To that 1 IkWc film, 1,000 full: 4-1 was used with Rubble Panol, #mL, NiF@Maillk. f
iNiFaM.

y4t′o、易■巾にスリットし、セラミック上Km着
剤で粘りつげ、薄膜磁気ヘッドを作鵬した。
A thin film magnetic head was fabricated by easily slitting it to a width of 100 yen and sticking it onto the ceramic with Km adhesive.

得られた展は、基板より受ける応力がな(、辿磁気異方
性のない良好なヘッド材としての磁気特性を示した。
The obtained material exhibited good magnetic properties as a head material, with no stress exerted by the substrate and no trace magnetic anisotropy.

特許出願人 帝人株式会社Patent applicant Teijin Ltd.

Claims (1)

【特許請求の範囲】 L 有機^分子フィルム上に物理的堆積法で金属膜を形
成したのち該有機高分子クイ11ムを溶解して金属薄膜
を得ること4+−替像とすう金属薄膜の製造法。 1 当該有機^分子フィルムがボリエスア・レフイルム
である特許請求のIi!!髄第1項第1項1戟薄膜の模
造法。
[Claims] L: Forming a metal film on an organic molecular film by a physical deposition method and then dissolving the organic polymer film to obtain a metal thin film. 4+- Production of a replacement image and a metal thin film. Law. 1 Claim Ii where the organic molecular film is Boriesua refilm! ! Imitation method of spinal cord 1st term 1st term 1.
JP8166882A 1982-05-17 1982-05-17 Manufacture of thin metallic film Pending JPS58199619A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8166882A JPS58199619A (en) 1982-05-17 1982-05-17 Manufacture of thin metallic film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8166882A JPS58199619A (en) 1982-05-17 1982-05-17 Manufacture of thin metallic film

Publications (1)

Publication Number Publication Date
JPS58199619A true JPS58199619A (en) 1983-11-21

Family

ID=13752712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8166882A Pending JPS58199619A (en) 1982-05-17 1982-05-17 Manufacture of thin metallic film

Country Status (1)

Country Link
JP (1) JPS58199619A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671518A (en) * 1979-11-15 1981-06-15 Seiko Epson Corp Production of thin film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671518A (en) * 1979-11-15 1981-06-15 Seiko Epson Corp Production of thin film

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