JPS58196684A - Driving method of coil for revolving magnetic field generation - Google Patents
Driving method of coil for revolving magnetic field generationInfo
- Publication number
- JPS58196684A JPS58196684A JP57078275A JP7827582A JPS58196684A JP S58196684 A JPS58196684 A JP S58196684A JP 57078275 A JP57078275 A JP 57078275A JP 7827582 A JP7827582 A JP 7827582A JP S58196684 A JPS58196684 A JP S58196684A
- Authority
- JP
- Japan
- Prior art keywords
- coil
- current
- magnetic field
- transistor
- trs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/085—Generating magnetic fields therefor, e.g. uniform magnetic field for magnetic domain stabilisation
Abstract
Description
【発明の詳細な説明】
本祈明は磁気バブル記憶素子の回転磁界発生用コイル駆
動−絡に保り、特に低消費電力駆動回路に好適なスイッ
チング素子にM08トランジスタを使用したコイル駆動
回路に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a coil drive circuit for keeping a coil drive circuit for generating a rotating magnetic field of a magnetic bubble memory element connected, and using an M08 transistor as a switching element particularly suitable for a low power consumption drive circuit.
従来のコイル駆動回路では、スイッチング素子にバイポ
ーラトランジスタやダイオードを使用し、回転磁界発生
用コイルに一定期間、正負の直流電圧を加えたシ、蜘絡
を行なって、コイルに台形波電流ヌは三角波電流を流し
ていた。In conventional coil drive circuits, bipolar transistors and diodes are used as switching elements, and positive and negative DC voltages are applied to the rotating magnetic field generating coil for a certain period of time. It was carrying a current.
[、かじ、バイポーラトランジスタでは飽和電圧による
損失や、ベース中のキャリアの蓄積効果によるカットオ
フ損失が大きい九め、低回路損失の駆動回路を冥現する
ことは困難であった。However, bipolar transistors have large losses due to saturation voltage and cut-off losses due to the accumulation of carriers in the base, making it difficult to create a drive circuit with low circuit loss.
この欠点を解消する丸め、スイッチング素子にMo8ト
ランジスタを使用した駆動回路が案出されていたが、M
o1)ランジスタでは寄生の出力容量が大きいため、コ
イル電流を停止する時点でコイル電Rが減衰振動を起し
、−気バプルを正常表位置で安定に停止させることが出
東ない欠点があつ九。A drive circuit using Mo8 transistors as switching elements has been devised to overcome this drawback, but M
o1) Since the parasitic output capacitance of the transistor is large, the coil current R causes damped oscillation when the coil current is stopped, making it impossible to stably stop the -air bubble at the normal surface position. .
本発明の目的は低回路損失を実現し、さらKm気バブル
を安定に正常な位置で停止させうる回転磁界発生用コイ
ル駆動回路の駆動方法を提供するものである。そして、
本発明はMOS)ランジスタをスイッチング素子に使用
した駆動回路において、コイル電流停止時に生ずる減衰
振動の発生メカニズムを明らかにし、その原因を取除い
たものである。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for driving a coil drive circuit for generating a rotating magnetic field, which achieves low circuit loss and can stably stop Km air bubbles at normal positions. and,
The present invention clarifies the generation mechanism of damped vibration that occurs when the coil current is stopped in a drive circuit using a MOS transistor as a switching element, and eliminates the cause thereof.
以下1本発明の一5j!總例f:第1.第2図及び第3
図を用いて説明する。91図はスイッチング素子にMO
S)ランジスタを用いたコイル駆動回路の回路図である
。回転磁界発生用コイル1はM08トランジスタQ]#
Q3(Pチャンネル)およびQCs Q 4(Nチャン
ネル)のドレインに接続され、MuトランジスタQl#
Q3のソースには直流電源・が接続され、MOS)ラン
ジスタQ21Q4のソース@は丁−スに接地されている
。点線で示した0 1* Cz @C3,(4のコンデ
ンサは1そ、れぞれMOSトランジスタQtIQ!IQ
31Q4の寄生出力容量である。The following 15j of the present invention! Example f: 1st. Figures 2 and 3
This will be explained using figures. Figure 91 shows MO in the switching element.
S) It is a circuit diagram of a coil drive circuit using a transistor. The rotating magnetic field generating coil 1 is an M08 transistor Q]#
Connected to the drains of Q3 (P channel) and QCs Q4 (N channel), Mu transistor Ql#
A DC power supply is connected to the source of Q3, and the sources of the MOS transistors Q21 and Q4 are grounded. 0 1 * Cz @C3, (4 capacitors are each MOS transistor QtIQ!IQ
This is the parasitic output capacitance of 31Q4.
第2図は定常時から停止時に至るコイル電流の波形(a
)とQl #92の入力信号(b)及びQssQaの入
力信号(elである。Figure 2 shows the coil current waveform (a
), the input signal (b) of Ql #92, and the input signal (el) of QssQa.
第1園と第2図を甲いて減衰振動が生ずる理由を説明す
る。期間T1においてはQlとQzO入力に信号が入D
、QlとQzは導通する。この期間、コイル1には直流
電源6が正極性(Qs、Q4のト°レインに接続されて
いる側のコイル端子電EEがもう一方の端子電圧よりも
大きい場合を正極性とする。)に加わ)コイル電流は増
大する。T2ではQl。The reason why damped vibration occurs will be explained by referring to Figure 1 and Figure 2. During period T1, signals are input to the Ql and QzO inputs.
, Ql and Qz are electrically connected. During this period, the DC power supply 6 is connected to the coil 1 with positive polarity (the case where the coil terminal voltage EE on the side connected to the train of Qs and Q4 is higher than the other terminal voltage is positive polarity). (addition) coil current increases. Ql at T2.
Qlは非導通となシ、Q31Q’がコイルの自己誘起電
圧によ抄逆方向に導通しくドレインーサブストレイト間
のダイオード特性による)、コイル電流は電*Sに押し
もどされて減少を始める。T3゜T4においても極性は
異々るが同様の動作が行なわれる。T4においては、Q
tsQzが逆方向に導通しQ31Q4は入力(!号がな
いため、非導通状態になっている。この時、C1,C2
はほぼOvに放電しており、CB、(:4は電#電圧ま
で充電されている。コイル電流が負のピークから減少し
てOに 1なった瞬間にQleQzは非導通にな
’) 、Q 3# Q aは元々非導通であるため、す
べてのトランジスタは非導通となる。この時点の等価回
路を第3因に示す。T4kl後は@3図の岬価回路にお
ける過渡現象となシ、C3,C4に充電された電荷はそ
れぞれコイル1を経由してCI、C2を充電し始めるた
め、コイル1に振1111流が流れる。フィル1には抵
抗1分も含まれるため、この振動は第2図か)に示した
ような減衰振動となる。該振動電流は磁気バブルを正常
な位置で停止させるととに擾1を与え、磁気バブル記憶
装置の読出しや、書きこみエラーの原因七f:rシ、該
装置の信頼性を低下させる不都合があった。Ql is non-conducting and Q31Q' is due to the diode characteristic between the drain and the substrate, which conducts in the opposite direction due to the self-induced voltage of the coil), and the coil current is pushed back by the current S and begins to decrease. The same operation is performed at T3° and T4, although the polarity is different. At T4, Q
tsQz is conductive in the opposite direction, and Q31Q4 is in a non-conductive state because there is no input sign (!).At this time, C1, C2
is almost discharged to Ov, and CB, (:4 is charged to the voltage.The moment the coil current decreases from the negative peak to O and becomes 1, QleQz becomes non-conductive.) Since Q 3 # Q a is originally non-conductive, all transistors become non-conductive. The equivalent circuit at this point is shown in the third factor. After T4kl, there is a transient phenomenon in the Misaki circuit shown in Figure @3, and the charges charged in C3 and C4 start charging CI and C2 via coil 1, respectively, so a 1111 current flows in coil 1. . Since the fill 1 also includes one minute of resistance, this vibration becomes a damped vibration as shown in Fig. 2). The oscillating current gives a disturbance to the magnetic bubble when it is stopped at a normal position, causing read/write errors in the magnetic bubble storage device, and is an inconvenience that reduces the reliability of the device. there were.
本発明はこの点に鑑み、低消費駆動回路を実現しつるM
OS)ランジスタ駆動回路においても、磁気バブル配憶
装置の読出しや書きこみエラーの原因と表るコイル電流
停止時の減衰振動を防止する回転磁界発生用コイルの駆
動方法を提供する。In view of this point, the present invention realizes a low consumption drive circuit.
OS) Also in a transistor drive circuit, a method for driving a rotating magnetic field generating coil is provided that prevents damped vibration when the coil current is stopped, which is a cause of read and write errors in a magnetic bubble storage device.
本発明によるコイル駆動方法をυ下詳細に説明する。期
間T4においては前述した如< 、Q 1sQzが逆方
向K11通し、QZI、Q4は非導通であるため、(l
、CztfOVK放電し、03.C4は電源電8Etで
充電されている。該期間のコイル電流が0ムになる直鋺
に、第4図に示す如く再度、Q4を導通秒11にするこ
とにより、コイル電流はQ4を通シ、QZを逆方向に導
通させて流れるため、t8は指数m融状の減衰W流とな
や。なお、(1)はコイル電掠、咎1ijQ11Q2の
入力(!if号、(c)はQsの入力信号、(dlけQ
4の入力信号の各鼓形である。期間T5ではQl#Q3
は非導通でToシ、Q2tQ4は導通しているため、(
1,CBはwう電圧に充電され、C2゜cnFiovに
放電している。T5の期間中、コイル電流はOAとなり
、q4は非導通となるが、この時点ではコイル1を含む
CI 、C3のループとCz、C4のループは定常状鰺
となっているため、過酋現象は起らない。期間T5の終
了時点でQ4が非導通1IAIIlとなるが、この時点
でも前の状態と同様に定寓状廖であるために過渡電流は
流れない。従って、本発明によるコイル駆動方法によれ
ば寄生出力容量の大きなMOll)ランジスタをスイッ
チング素子KJ’f3いても磁気バブル記憶装置の獣出
しや書きこみエラーの原因となるコイル電流停止時の減
衰振動を防止でき、Mo8)ランジスタをスイッチング
素子に用いた駆動回路特有の低損失駆動回路を実現しう
る。The coil driving method according to the present invention will be explained in detail below. During period T4, as mentioned above, Q1sQz passes through K11 in the reverse direction, and QZI and Q4 are non-conductive, so (l
, CztfOVK discharge, 03. C4 is charged with a power supply of 8Et. When the coil current during this period becomes 0, by making Q4 conductive again at 11 seconds as shown in Figure 4, the coil current flows through Q4 and conducts QZ in the opposite direction. , t8 is a damped W flow with an index m melt. In addition, (1) is the input signal of the coil wire, the input signal of Q11Q2 (!if), (c) is the input signal of Qs, (dl and Q
4 input signals. In period T5, Ql#Q3
is non-conducting and Q2tQ4 is conducting, so (
1, CB is charged to a voltage of w and discharged to C2°cnFiov. During the period T5, the coil current becomes OA and q4 becomes non-conductive, but at this point, the loop of CI and C3 including coil 1 and the loop of Cz and C4 are in a steady state, so there is no overheating phenomenon. doesn't happen. At the end of the period T5, Q4 becomes non-conductive (1IAIII1), but at this point as well, no transient current flows because it is in a fixed state as in the previous state. Therefore, according to the coil driving method according to the present invention, even if a MOll) transistor with a large parasitic output capacitance is used as a switching element KJ'f3, the damped vibration when the coil current is stopped, which causes the magnetic bubble storage device to eject or write errors, can be suppressed. Therefore, it is possible to realize a low-loss drive circuit unique to a drive circuit using an Mo8 transistor as a switching element.
又、本実論例では三角波電流の場合について説明したが
、台形波紡寛流を流す場合についても同様の効果が得ら
れることは明らかである。Further, in this practical example, the case of a triangular wave current has been explained, but it is clear that the same effect can be obtained when a trapezoidal wave spinning current is applied.
このように、本発明によれば寄生出力容量の大きなMO
Bトランジスタを回転磁界発生用コイルの駆動回路に用
いても、磁気バブル記憶装置の読出しや書きこみエラー
の原因と力るコイル電流停止時の減衰振動を起こすこと
な(、Mo8)ランジスタを用いた駆動回路特有の低損
失駆動回路を11!現しうる効果がある。As described above, according to the present invention, an MO with a large parasitic output capacitance
Even if B transistors are used in the drive circuit of the rotating magnetic field generating coil, they do not cause damped vibrations when the coil current stops, which can cause reading and writing errors in magnetic bubble storage devices (Mo8). 11 low loss drive circuits unique to drive circuits! There are effects that can be achieved.
第1図はMo8)ランジスタをスイッチング素子に用い
た回転磁界発生用コイル駆動回路の回路図、第2図は該
コイルに流れる電りとQIIQ冨およびQ3.Q4の入
力信号のタイミング図、第3図はコイル電流停止時の振
動開始直#0駆動回路の等価回路、第4図は本発明によ
るコイル電流の振動を゛防止することのできるコイル駆
動方法を実現する入力信号のタイミング図である。
1・・・・回転磁界発生用コイル、2#・・OPチャン
ネルMOB)ランジス’Q’、3・・・・Nチャンネル
Mo1)ランジスタQ2.4・・・・PチャンネルMO
1i)ランジスタqs、S・・・・NチャンネルMOi
l)ランジスタQ4.6・・・・直流電鍵、7,8.8
.10・・・・Qx*QzaQ 3+ Q 4の寄生出
力容量。
第1図
眞
第2図
第3図
第4図Fig. 1 is a circuit diagram of a coil drive circuit for generating a rotating magnetic field using an Mo8) transistor as a switching element, and Fig. 2 is a circuit diagram of a coil drive circuit for generating a rotating magnetic field using an Mo8) transistor as a switching element. A timing diagram of the input signal of Q4, Fig. 3 is an equivalent circuit of the #0 drive circuit immediately after vibration starts when the coil current stops, and Fig. 4 shows a coil drive method that can prevent coil current vibration according to the present invention. FIG. 4 is a timing diagram of input signals realized. 1...Rotating magnetic field generation coil, 2#...OP channel MOB) Rungis 'Q', 3...N channel Mo1) Ranjistor Q2.4...P channel MO
1i) Transistor qs, S...N channel MOi
l) Transistor Q4.6...DC electric key, 7,8.8
.. 10...Qx*QzaQ3+Q4 parasitic output capacitance. Figure 1, Figure 2, Figure 3, Figure 4
Claims (1)
第1.第2のPチャンネルトランジスタのドレインと第
3.第4のNチャンネルトランジスタのドレインに回転
磁界発生用コイルを接続し、$第1.第2のトランジス
タのソースを直流電源に接続し、第3.第4のトランジ
スタのソースを接地し、該コイルに三角波又は台形波状
0電流を供給する駆動回路において、該コイル電流停止
時のコイル電流がOKなる直前に、骸コイルの自己誘起
電圧によシ逆極性に導通している2個のトランジスタv
外の2個のトランジスタのどちらか一方を導通状i1!
lKさせることにより、該Mo1)ランジスタの寄生出
力容量と該コイルのインダクタンスによって生ずる過渡
振動電流を抑止したことを**とする回転磁界発生用コ
イルの駆動方法。Using four Mo8) transistors as switching elements,
1st. the drain of the second P-channel transistor and the third . A rotating magnetic field generating coil is connected to the drain of the fourth N-channel transistor, and the $1. The source of the second transistor is connected to a DC power source, and the source of the third transistor is connected to a DC power source. In a drive circuit where the source of the fourth transistor is grounded and a triangular wave or trapezoidal wave zero current is supplied to the coil, the self-induced voltage of the skeleton coil is reversed immediately before the coil current becomes OK when the coil current stops. Two transistors conductive with polarity v
Either one of the two outer transistors is turned on i1!
** A method for driving a coil for generating a rotating magnetic field, which suppresses transient oscillating current caused by the parasitic output capacitance of the Mo1) transistor and the inductance of the coil by increasing the voltage at 1K.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57078275A JPS58196684A (en) | 1982-05-12 | 1982-05-12 | Driving method of coil for revolving magnetic field generation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57078275A JPS58196684A (en) | 1982-05-12 | 1982-05-12 | Driving method of coil for revolving magnetic field generation |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58196684A true JPS58196684A (en) | 1983-11-16 |
JPH0232709B2 JPH0232709B2 (en) | 1990-07-23 |
Family
ID=13657421
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57078275A Granted JPS58196684A (en) | 1982-05-12 | 1982-05-12 | Driving method of coil for revolving magnetic field generation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58196684A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503542A (en) * | 1973-04-12 | 1975-01-14 | ||
JPS50139634A (en) * | 1974-04-11 | 1975-11-08 | ||
JPS5227224A (en) * | 1975-08-25 | 1977-03-01 | Fujitsu Ltd | Magnetic bubble drive circuit |
-
1982
- 1982-05-12 JP JP57078275A patent/JPS58196684A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503542A (en) * | 1973-04-12 | 1975-01-14 | ||
JPS50139634A (en) * | 1974-04-11 | 1975-11-08 | ||
JPS5227224A (en) * | 1975-08-25 | 1977-03-01 | Fujitsu Ltd | Magnetic bubble drive circuit |
Also Published As
Publication number | Publication date |
---|---|
JPH0232709B2 (en) | 1990-07-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5399920A (en) | CMOS driver which uses a higher voltage to compensate for threshold loss of the pull-up NFET | |
US6433620B1 (en) | Silicon-on-insulator CMOS circuit | |
JP2585284B2 (en) | Power MOSFET gate drive circuit | |
US7724034B2 (en) | Floating driving circuit | |
GB1358193A (en) | Integrated control circuit | |
JPH0856139A (en) | Clock generator | |
CN115133629B (en) | Charging control circuit, control method and lithium battery high-side driving circuit | |
US6175463B1 (en) | Architecture for hard disk drive write preamplifiers | |
JP2002076882A (en) | Semiconductor integrated circuit device | |
JPS63204814A (en) | Power transistor driving circuit | |
JPS58196684A (en) | Driving method of coil for revolving magnetic field generation | |
US6194948B1 (en) | Method and an auxiliary circuit for preventing the triggering of a parasitic transistor in an output stage of an electronic circuit | |
CN108429435A (en) | A kind of MOSFET isolated drive circuits | |
JPH05244765A (en) | Drive circuit for insulated-gate type power semiconductor element | |
JPH076581A (en) | Substrate bias-pump device | |
JPS61131613A (en) | Drive circuit | |
JP2729379B2 (en) | Logic circuit | |
JPH0442615A (en) | Semiconductor integrated circuit | |
JPS6116619A (en) | Driving circuit for field effect transistor | |
JPH088483B2 (en) | ECL level output circuit | |
CN113871252A (en) | Relay drive circuit | |
KR100387263B1 (en) | Output driver circuit | |
JPS5992620A (en) | Clock generator circuit | |
JPS6116620A (en) | Driving circuit for field effect transistors | |
US6342806B1 (en) | Structure of a floating gate of a MOS transistor and method of changing the threshold value thereof |