JPS58196046A - Manufacture of solid-state color image pickup device - Google Patents
Manufacture of solid-state color image pickup deviceInfo
- Publication number
- JPS58196046A JPS58196046A JP57078532A JP7853282A JPS58196046A JP S58196046 A JPS58196046 A JP S58196046A JP 57078532 A JP57078532 A JP 57078532A JP 7853282 A JP7853282 A JP 7853282A JP S58196046 A JPS58196046 A JP S58196046A
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- solid
- color filter
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000003384 imaging method Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 abstract description 6
- 230000000717 retained effect Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 108091006146 Channels Proteins 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Filters (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明社、基板表面の感光部近辺の領域を改、良したカ
ラー用固体撮像装置の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method of manufacturing a color solid-state imaging device in which the area near the photosensitive portion on the surface of a substrate is improved and improved.
従来、固体撮像装置例えばインターライン転送方式のカ
ッー用ＣＯＤ固体撮像装置は第１図の如く製造されてい
る。2. Description of the Related Art Conventionally, a solid-state imaging device, such as an interline transfer type COD solid-state imaging device, has been manufactured as shown in FIG.
まず、ｐ型シリコン基板１表面に公知の方法によシ遥択
拡散、エツチング処理、開孔等を行ない、光入射により
生成される信号電荷を蓄積するｎ十型領域（感光部）２
．この感光部に隣接するｎ十型埋込み領域３及びｐ十型
チャネルストツノ譬領域４を夫々形成する。つづいて、
基板１上に第１層目の絶縁膜５．を形成した後、写真蝕
刻法によ〕多結晶シリコンやＭｏ８１ｍ’Ｉからなる第
１層目の転送電極６□及、び隣接する画素の第１層回転
送電極６３を形成する。次に、これら転送電極６＠ ＊
６ｍを含む第１層目の絶縁膜５１上に第２層目の絶縁
膜６１を形成する。First, selective diffusion, etching, opening, etc. are performed on the surface of a p-type silicon substrate 1 by a known method, and an n-type region (photosensitive region) 2 where signal charges generated by incident light are accumulated.
．． An n-type buried region 3 and a p-type channel bottom region 4 are respectively formed adjacent to this photosensitive portion. Continuing,
A first layer of insulating film 5 is formed on the substrate 1. After forming, a first layer transfer electrode 6□ made of polycrystalline silicon or Mo81m'I and a first layer transfer electrode 63 of an adjacent pixel are formed by photolithography. Next, these transfer electrodes 6@*
A second layer insulating film 61 is formed on the first layer insulating film 51 including 6 m.
同様にして前記絶縁膜５富上に第２層目の転送電極１を
形成する。この転送電極７は前記転送電極６１と対とな
って前記感光部２に蓄積され良信号電荷を読み出す読出
し部である。更に、前記転送電極１上に第３層目の絶縁
膜５．を形成する。なお、絶縁膜５ＩＯ形成の際、凹部
８が生じる０次いで、この絶縁膜５ｓ上に胞）記感光部
ｌに対応する部分に開孔部９を有する例えばＡｊからな
る光シールド膜１０を設ける。つづいて、前記絶縁膜５
１Ｃ）凹部８及び光シールド膜１０の開孔部９にカラー
フィルタ１１を形成して所望のカラー用ＣＣＤ固体撮像
装置を負造する。Similarly, a second layer transfer electrode 1 is formed on the insulating film 5. The transfer electrode 7 is paired with the transfer electrode 61 and serves as a readout section for reading out good signal charges accumulated in the photosensitive section 2. Furthermore, a third layer of insulating film 5 is formed on the transfer electrode 1. form. Incidentally, when forming the insulating film 5IO, a concave portion 8 is formed. Next, a light shielding film 10 made of, for example, Aj having an opening 9 in a portion corresponding to the photosensitive portion l is provided on the insulating film 5s. Subsequently, the insulating film 5
1C) A color filter 11 is formed in the recess 8 and the opening 9 of the light shield film 10 to fabricate a desired color CCD solid-state imaging device.
ところで、前記カラーフィルタ１１の形成手段としては
、カラーフィルタ１ノを光シールドＷｉ！ｌｅの開孔部
９から露出する絶縁膜５．に接着剤を介して貼り合わせ
る方法或いは（光シールド膜１０を含む絶縁膜５魯）上
に感光性のある被着層を塗布後、所定形状のマスクによ
シ位置合わせをし、露光、現像、着色を行なって形成す
る方法（リングラフィ技術）とがある。By the way, as a means for forming the color filter 11, the color filter 1 is formed using a light shield Wi! Insulating film 5 exposed from the opening 9 of le. After applying a photosensitive adhesion layer on the insulating film 5 including the light shield film 10 using an adhesive, the film is aligned with a mask of a predetermined shape, exposed to light, and developed. There is also a method of forming by coloring (phosphorography technique).
〔背景技術の問題点〕
しかしながら、曲者の場合は、光シールド膜１＃開孔部
９から露出する絶縁膜５ｓに接着剤を介して力２−フィ
ルタ１１を貼シ合わせる際、露出する絶縁膜５１部分が
凹状となっているた込、＃カラーフィルタ１１と絶縁膜
５ｓ間に空気が入ル込んで泡が発生し易く１色むらの原
因となる。一方、後者の場合は、カラーフィルタ１１を
形成する材料である被着層がレジスト材料の如く粘性が
ある丸め、光シールド膜１０を含む絶縁膜５．上に唸布
する際に絶縁膜５畠の凹凸に起因して被着層に厚さむら
が生じ、これによ）塗布し九被着層の中心から放射状に
斜線が現われゐ（スドリエーシ曹ン現象）、このストリ
エーシ曹ン現象が発生すると、・譬ターン形成Ｏ際のノ
々ターン寸法のばらつきが大きくなる。[Problems with the Background Art] However, in the case of a curved type, when attaching the force 2 filter 11 to the insulating film 5s exposed from the opening 9 of the light shield film 1# through an adhesive, the exposed insulation When the film 51 portion is concave, air enters between the #color filter 11 and the insulating film 5s, and bubbles are likely to occur, causing one color unevenness. On the other hand, in the latter case, the adhesion layer, which is the material forming the color filter 11, is a viscous ball like a resist material, and the insulating film 5 including the light shielding film 10. When the insulating film is coated on top of the insulating film, the thickness of the adhered layer becomes uneven due to the unevenness of the insulation film. (phenomenon), when this striation phenomenon occurs, the variation in the size of the no-no-turns when forming the no-no-turns becomes large.
その結果この寸法のばらつきに起因する光感度の不均一
が生じる。また厚さむらによる光拡散現象が生じ、ｌ１
ｌｉ像でホワイト信号が持ちあが如、色むらの原因とな
る。As a result, non-uniform photosensitivity occurs due to this dimensional variation. In addition, a light diffusion phenomenon occurs due to thickness unevenness, and l1
If the white signal is lifted in the li image, it causes color unevenness.
本発明は上記事情に鑑みてなされたもので、カラーフィ
ルタを形成する際の形成手段に起因して画像に色むらが
生ずるのを阻止したカラー用固体撮像装置のｔｉ造方法
を提供することを目的とするものである。The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a method for manufacturing a color solid-state imaging device that prevents color unevenness from occurring in images due to the forming means used when forming color filters. This is the purpose.
本発明は、光シールド膜を含む絶縁膜を形成するのに先
立ち、予め半導体基板の絶縁膜上の光ンールド膜間に透
過性を有する絶縁層を形成し、しかる後この絶縁層を前
記絶縁膜上の光シールド膜と同一面となるまで平担化す
ることによって、カラーフィルム形成面の凹凸を最小に
押さえ、もって画像に色むらが生ずるのを阻止すること
を図ったことを骨子とする。In the present invention, prior to forming an insulating film including a light shielding film, an insulating layer having transparency is formed in advance between optically rolled films on an insulating film of a semiconductor substrate, and then this insulating layer is attached to the insulating film. The main idea is to minimize the unevenness of the color film forming surface by flattening it until it becomes flush with the upper light shield film, thereby preventing color unevenness from occurring in the image.
本発明をインターライン転送方式のカラー用ＣＣＤ固体
撮像装置に適用し九場合について、第２図（ａＪ〜（ｄ
Ｊに基づｈて説明する。FIG. 2 (aJ to (d)
This will be explained based on J.
〔↓〕 まず、常法によりｐ型シリコン基板２１表面に
光入射により生成される信号電荷を蓄積するｎｇ領領域
感光部）ｚｌ、ｒｒ”型埋込み領域２３及びｐ十型チャ
ネルストツノ膏領域２４を形成し、更に基板２１上の絶
縁膜２５内にＷＪ１層目の転送電極２６１．２６−及び
第２層目の転送電極２７を形成した。なお、前記転送電
極２６＠、２”ｌ鉱対をなし、前記感光部２１に蓄積さ
れた信号電荷を読み出す読出し部である。[↓] First, by a conventional method, an NG area (photosensitive area) zl, rr'' type buried region 23 and a p 10 type channel base region 24 are formed on the surface of the p-type silicon substrate 21 to accumulate signal charges generated by incident light. were formed, and furthermore, the transfer electrodes 261, 26- of the first layer of WJ and the transfer electrode 27 of the second layer were formed in the insulating film 25 on the substrate 21. This is a readout section that reads out the signal charges accumulated in the photosensitive section 21.
また、前記転送電極２ｅ％ 、２６．．２７の形成に起
因して前記感光部２２に対応する絶縁膜２５に凹部２１
が生じた。つづいて、前記絶縁膜２５上に前記感光部２
２に対応する部分に開孔部２９を有したＡｌからなる光
シールド膜３０を形成した（第２図（ａ１図示）。Further, the transfer electrode 2e%, 26. ．． 27, a recess 21 is formed in the insulating film 25 corresponding to the photosensitive portion 22.
occurred. Subsequently, the photosensitive portion 2 is placed on the insulating film 25.
A light shielding film 30 made of Al having an opening 29 in a portion corresponding to 2 was formed (FIG. 2 (a1 illustration)).
〔−〕 次に、前記光シールド膜３０を含む絶縁膜２
５上に透過性を有する絶縁層であるＰＳＧｌ−３１を形
成した。（第２図（ｂＪ図示）。つづいて、このＰＳＧ
層３１上にレジスト膜３２を塗布する。なお、このレゾ
スト膜３２は粘性を有しているため、その表面は平担に
なる（第２図（Ｃ）図示）、ひきつづき、前記レノスト
膜３２及びＰＳＧ’！ｑ１ｓｘをＲＩ Ｅ（Ｒａａａｔ
ｌｖｅ ｌｏｇ Ｅｔｃｈｉｎｇ ）法により、エツチ
ング面が光シールド膜Ｊ＃に達するまでエツチングを行
なう、なお、エツチングに際し、レジスト膜Ｓｊ及び光
シールド膜ＪＯのエツチング速度は略同じ程度にしてお
く。[-] Next, the insulating film 2 including the light shield film 30
PSGl-31, which is a transparent insulating layer, was formed on 5. (Figure 2 (bJ illustration).Continuing, this PSG
A resist film 32 is applied on the layer 31. Note that since this resist film 32 has viscosity, its surface becomes flat (as shown in FIG. 2(C)). q1sx to RI E (Raaat
Etching is carried out by the (lve log etching) method until the etched surface reaches the light shield film J#. During etching, the etching speeds of the resist film Sj and the light shield film JO are kept approximately at the same level.
この結果、前記絶縁膜ｚｅｒｏ回部２．８及び光シール
ド膜ＳＯの開孔部にのみ表面が平坦な残存Ｐ８０４ｓｓ
’を残存させる０次いで、との残有Ｐ８Ｇ層り１′上に
カラーフィルタ３１を貼）合わせて所望の力２−用ＣＣ
Ｄ固体撮像装置を製造し九（第２図（ｄ）図示）。As a result, residual P804ss with a flat surface is formed only in the insulating film zero circuit part 2.8 and the opening part of the optical shield film SO.
Then, attach the color filter 31 on the remaining P8G layer 1' with the desired force 2- CC
D. Manufacturing a solid-state imaging device (as shown in FIG. 2(d)).
しかして、前述した製造方法によれば、絶縁膜ｘｔｔｔ
ｖ凹部２８及び光シールド膜３０の開孔部ｘＨｃＨ面が
前記光シールド膜２００表面と同レベルの残存ＰＳＧ層
１１′を残存させて平坦化させる丸め、後工程のカラー
フィルタ３２の貼シ合わせ時に該カラーフィルタＳ２と
残存ＰＥＧ層１１′間に空気が入シこんで奮ｔｂ、泡が
発生するのを防止し、もって泡の発生に起因する色むら
を阻止することができる。なお、前記実施例ではカラー
フィルタを残存ＰＳＧ層３１り上に貼〕合わせる場合に
ついて述べたが、リソグラフィ技術を用いてカラーフィ
ルタを形成する場合についても同様な効果を有する。According to the manufacturing method described above, however, the insulating film xttt
The v recess 28 and the opening xHcH surface of the light shield film 30 are rounded to leave the residual PSG layer 11' at the same level as the surface of the light shield film 200 and flatten it, and when bonding the color filter 32 in the subsequent process. It is possible to prevent air from entering between the color filter S2 and the remaining PEG layer 11' and from generating bubbles, thereby preventing color unevenness caused by the generation of bubbles. In the above embodiment, the case where the color filter is pasted onto the remaining PSG layer 31 has been described, but the same effect can be obtained when the color filter is formed using lithography technology.
即ち、光シールド膜３０を含む絶縁膜２５全面が平坦で
あるため、従来の如きストリエーシ曹ン現象を防止して
カラーフィルタの材料である被着層を全面に均一に形成
し、もってストリエーシ曹ン現象に起因する色むらの発
生を阻止できる。また、残存ＰＳＧ層３１′は透過性を
有しているため、感光部２２に入射する光量を妨げない
ことは勿論のことである。That is, since the entire surface of the insulating film 25 including the light shielding film 30 is flat, it is possible to prevent the conventional striation phenomenon and form the adhesion layer, which is the material of the color filter, uniformly over the entire surface. It is possible to prevent color unevenness caused by this phenomenon. Furthermore, since the remaining PSG layer 31' has transparency, it goes without saying that it does not impede the amount of light incident on the photosensitive section 22.
上記実施例では透過性を有する絶縁層としてＰＳＧ層を
用％Ａ九が、これに限らず、例えばＳｉ、Ｎ４層でもよ
い。In the above embodiment, a PSG layer is used as the transparent insulating layer, but the invention is not limited to this, and for example, a Si or N4 layer may be used.
を九、上記実施例ではＣＯＤ （電荷結合素子）固体撮
像装置の場合について述べ九が、これに限らず１例えば
ＣＩＤ又はＢＢＤ固体撮像装置、更にはＭＯ８型センナ
にも同様に適用できる。。In the above embodiment, the case of a COD (charge-coupled device) solid-state imaging device is described; however, the present invention is not limited to this, and can be similarly applied to, for example, a CID or BBD solid-state imaging device, and furthermore, an MO8 type sensor. .
以上詳述した如く本発明によれば５画像上の色むらを防
止して大巾に歩留シを向上させたインターライン方式の
カラー用ＣＯＤ固体撮像装置等のカラー用固体撮像装置
の製造方法を提供できゐものである。As detailed above, according to the present invention, a method for manufacturing a color solid-state imaging device, such as an interline color COD solid-state imaging device, which prevents color unevenness on five images and greatly improves yield. It is something that can be provided.
第１図は従来のインターライン転送方式のカラー用ＣＯ
Ｄ固体撮像装置の断面図、第２図（ｍｌ〜（ｄｌは本発
明のインターライン転送方式のカラー用ＣＯＤ固体撮像
装置の製造方法を製造工糧順に示す断面図である。
２１・・・ｐ型シリコン基板、２２・−を型領域（感光
部）、１３− 鳳＋型埋込み領域、２４・・・ｐ生型チ
ャネルストツノ９領域、２５・・・絶縁膜、２＃宜＠
Ｊ ｉ＠ ＊ Ｊ Ｆ”・転送電極、Ｚａ・・・凹部。
Ｘｔｔ−一開孔部、５ｏ−ＡＩからなる光シールＰ膜、
Ｓｌ・−Ｐ Ｓ Ｇ層（透過性を有する絶縁層）７７’
・・・残存ＰＳＧ層、３２・・・カラーフィルタ。Figure 1 shows the color CO of the conventional interline transfer method.
D Cross-sectional view of solid-state imaging device, FIG. mold silicon substrate, 22-- mold region (photosensitive part), 13- + type buried region, 24...p raw type channel stock horn 9 region, 25... insulating film, 2#Yi@
J i@ * J F"・Transfer electrode, Za...concavity.
Sl・-P S G layer (transparent insulating layer) 77'
...Residual PSG layer, 32... Color filter.
Claims (1)
射により生成される信号電荷を蓄積する感光部と、前記
基板表面に感光部に近接して設けられ、該感光部に蓄積
される信号電荷を読み出す読出し部と、前記基板の上部
に前記感光部を除く部分に対応するように絶縁膜を介し
て設けられる光シールド膜と、この光シールド膜間から
露出する前記絶縁膜上に形成されるカラーフィルタとか
らなるカラー用固体撮像装置の製造に際し、前記光シー
ルド膜間に光透過性の絶縁層を１表面が該シールド膜と
同レベルとなるように形成することを特徴とするカラー
用固体撮像装置の製造方法。a semiconductor substrate of one conductivity type; a photosensitive section provided on the surface of the substrate to accumulate signal charges generated by incident light; and a photosensitive section provided on the surface of the substrate in proximity to the photosensitive section and signals accumulated in the photosensitive section. a readout section for reading out charges; a light shielding film provided on the upper part of the substrate via an insulating film so as to correspond to a portion other than the photosensitive section; and a light shielding film formed on the insulating film exposed from between the light shielding films. When manufacturing a color solid-state imaging device comprising a color filter, a light-transmitting insulating layer is formed between the light shield films so that one surface thereof is at the same level as the shield film. A method for manufacturing a solid-state imaging device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57078532A JPS58196046A (en) | 1982-05-11 | 1982-05-11 | Manufacture of solid-state color image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57078532A JPS58196046A (en) | 1982-05-11 | 1982-05-11 | Manufacture of solid-state color image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58196046A true JPS58196046A (en) | 1983-11-15 |
Family
ID=13664516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57078532A Pending JPS58196046A (en) | 1982-05-11 | 1982-05-11 | Manufacture of solid-state color image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58196046A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100477784B1 (en) * | 2000-08-31 | 2005-03-22 | 매그나칩 반도체 유한회사 | Image sensor having lens formed by air in trench and method for fabricating the same |
-
1982
- 1982-05-11 JP JP57078532A patent/JPS58196046A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100477784B1 (en) * | 2000-08-31 | 2005-03-22 | 매그나칩 반도체 유한회사 | Image sensor having lens formed by air in trench and method for fabricating the same |
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