JPS58191653U - optical read sensor - Google Patents

optical read sensor

Info

Publication number
JPS58191653U
JPS58191653U JP8876182U JP8876182U JPS58191653U JP S58191653 U JPS58191653 U JP S58191653U JP 8876182 U JP8876182 U JP 8876182U JP 8876182 U JP8876182 U JP 8876182U JP S58191653 U JPS58191653 U JP S58191653U
Authority
JP
Japan
Prior art keywords
optical read
read sensor
reading sensor
photoconductor layer
abstract
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8876182U
Other languages
Japanese (ja)
Inventor
章 内山
野本　勉
勝昭 坂本
岩「淵」　俊之
Original Assignee
沖電気工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 沖電気工業株式会社 filed Critical 沖電気工業株式会社
Priority to JP8876182U priority Critical patent/JPS58191653U/en
Publication of JPS58191653U publication Critical patent/JPS58191653U/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の光学読取りセンサとその光強度変化の説
明図、第２図は本考案の第１の実施例の光学読取りセン
サとその光強度変化の説明図、第３図は従来の光学読取
りセンサと本考案の第１の実施例の光学読取りセンサと
の光電流の比較図、第４図は本考案の第２の実施例の光
学読取りセンサの説明図である。　　　− １１・・・アモルファスシリコン層、２３・・・光反射
層。Fig. 1 is an explanatory diagram of a conventional optical reading sensor and its light intensity change, Fig. 2 is an explanatory diagram of the optical reading sensor of the first embodiment of the present invention and its light intensity change, and Fig. 3 is an explanatory diagram of a conventional optical reading sensor and its light intensity change. A comparison diagram of photocurrent between the reading sensor and the optical reading sensor according to the first embodiment of the present invention, and FIG. 4 is an explanatory diagram of the optical reading sensor according to the second embodiment of the present invention. - 11... Amorphous silicon layer, 23... Light reflecting layer.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] アモルファスシリコンを光導電体層として用いる光学読
取りセンサにおいて、この光導電体層を通過してきた検
出すべき光を再びこの光導電体層に入射させる光反射層
を設けたことを特徴とする光切読取りセンサ。An optical reading sensor using amorphous silicon as a photoconductor layer, characterized in that it is provided with a light reflection layer that makes the light to be detected that has passed through the photoconductor layer enter the photoconductor layer again. reading sensor.
JP8876182U 1982-06-16 1982-06-16 optical read sensor Pending JPS58191653U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8876182U JPS58191653U (en) 1982-06-16 1982-06-16 optical read sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8876182U JPS58191653U (en) 1982-06-16 1982-06-16 optical read sensor

Publications (1)

Publication Number Publication Date
JPS58191653U true JPS58191653U (en) 1983-12-20

Family

ID=30097421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8876182U Pending JPS58191653U (en) 1982-06-16 1982-06-16 optical read sensor

Country Status (1)

Country Link
JP (1) JPS58191653U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5748276A (en) * 1980-09-06 1982-03-19 Nippon Telegr & Teleph Corp <Ntt> Image sensor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5748276A (en) * 1980-09-06 1982-03-19 Nippon Telegr & Teleph Corp <Ntt> Image sensor

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