JPS58190035A - Wire bonding - Google Patents

Wire bonding

Info

Publication number
JPS58190035A
JPS58190035A JP57072443A JP7244382A JPS58190035A JP S58190035 A JPS58190035 A JP S58190035A JP 57072443 A JP57072443 A JP 57072443A JP 7244382 A JP7244382 A JP 7244382A JP S58190035 A JPS58190035 A JP S58190035A
Authority
JP
Japan
Prior art keywords
capillary
bonding
gold wire
purified
ultrasonic wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57072443A
Other languages
Japanese (ja)
Inventor
Ichiro Munakata
一郎 宗像
Tatsuo Shirakawa
白川　達男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57072443A priority Critical patent/JPS58190035A/en
Publication of JPS58190035A publication Critical patent/JPS58190035A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7801—Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85043—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a flame torch, e.g. hydrogen torch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Abstract

PURPOSE:To obtain a wire bonding apparatus providing the purifying function for electrode pad formed with aluminium etc. by bonding a gold wire with the second capillary on the electrode surface purified by the first capillary. CONSTITUTION:The first capillary 4 of bonding apparatus abuts against the pad surface 3 with a light load P1 and an ultrasonic wave energy F1 for exciting the capillary is applied thereto. Thereby, the aluminium electrode surface is purified. The purified aluminium electrode surface allows the first capillary to be released from the substrate along the arrow mark 9 and also abuts the second capillary 5 in the side of gold wire ball end cut by the hydrogen arc along the arrow mark 10. Thus, a gold wire 8 is pressure-welded in contact with the aluminium electrode pad surface 3 by applying an normal load P2 and ultrasonic wave excitation energy F2 required for bonding. Upon completion of bonding of gold wire, the second capillary is lifted as indicated in the figure and simultaneously the gold wire is cut by the hydrogen arc. The capillary loads P1 and P2 and ultrasonic wave energies F1 and F2 are defined respectively in the relation such as F1<F2, and P1<P2.

Description

【発明の詳細な説明】 （ａ）　　発明の技術分野 本発明はハイブリッド集積回路の組立生産に係る特に半
導体チップに対するワイヤ接続のためのワイヤボンディ
ング方法に関す。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a wire bonding method for the assembly and production of hybrid integrated circuits, particularly for wire connections to semiconductor chips.

（ｂ）　　技術の背景 係るワイヤ接続方法には、熱圧着法による方法や超１ｉ
１−波エネルギを印加する方法吟あるが、本発明社むし
ろ曲名熱圧着法によるリードワイヤ接続のボールボンデ
ィング法に関し、その意図するとこφｄ半導体チップの
接続パッドがアルミニウム蒸着面をなす場合等絶縁被膜
が問題とされるワイヤボンディング手段に係わる。(b) Technical background The wire connection methods include thermocompression bonding method and super 1i method.
There are many methods for applying 1-wave energy, but the present invention is more concerned with the ball bonding method for connecting lead wires using thermocompression bonding, and what is intended is the case where the connection pad of a φd semiconductor chip forms an aluminum vapor-deposited surface, etc. The problem relates to wire bonding means.

（ｃ）　　従来技術と問題点 イイ・ボンディングされた半導体チップは、核チップ（
基板）内のパッド電極とパッケージ側端子との間に通常
細い金線がホンディング接続される。しかし、例えば前
記パッド側電極がアルミニウムを蒸着した酸化生成しや
すいパッドＩｌｌ＆面の場合、金線とのボンディング加
工性が懺面の識化膜状態により難易を生じ、結果的に接
続性能がバラツキ又接続の信頼性にも問題が残る。この
ため、【 従来からボンディング加工前、荷踏蝉によシ強制的に酸
化膜を破壊除去するがかかる電ＩＩＩ！、清浄化の方法
は問題がある（。(c) Prior art and problems A bonded semiconductor chip is a core chip (
Normally, a thin gold wire is connected by bonding between the pad electrode inside the substrate and the terminal on the package side. However, for example, in the case where the pad side electrode is a pad Ill& surface which is easily oxidized and has aluminum deposited on it, the bonding process with the gold wire is difficult due to the condition of the recognition film on the surface, and as a result, the connection performance may vary or Connection reliability also remains an issue. For this reason, [Conventionally, before bonding processing, the oxide film is forcibly destroyed and removed by a cicada. , the method of cleaning is problematic (.

（ｄ）　　発明の目的 本発明の目的は前記のｉｔ’ｌ鵬点を除去すること、即
ちアルミニウム等から形成の′＃ｔ＆パッドに対し憤海
綱會トをＮ４ｎｔｒす入９イヤボンデノングー智を１−
体化するにある。(d) Object of the Invention The object of the present invention is to eliminate the above-mentioned problems, i.e., to insert a 9-year bond to a pad made of aluminum or the like. 1-
It's about being embodied.

（ｅ）　　発明の栴成 前記目的は、第一のキャピラリと第二のキャピラリとを
具えるポールボンデイン装置によりアルミニウム等の電
極形成の牛導体チ　プヘ金＆！全圧接接続するに当り、
前記第一のキャピラリで電極形成面の清浄化を、該清浄
化電極面に第二のキャピラリで金線ボンディングをなす
ことにより達成することが出来る。(e) The object of the invention is to form a conductor chip made of aluminum or the like using a pole bonding device comprising a first capillary and a second capillary. When making a full pressure welding connection,
Cleaning of the electrode forming surface of the first capillary can be achieved by bonding gold wire with the second capillary to the cleaned electrode surface.

（ｆ）　　発明の実施例 ４１） 以下、栴図を参照しながら本発明の実施例を畦細説明す
るρ 図は第一のキャピラリと第二のキャピラリとを臭えるポ
ールボンディング装置加工狭部を示す簡略断面図である
。(f) Embodiment 41) Hereinafter, an embodiment of the present invention will be explained in detail with reference to the diagram. The diagram shows the narrow part of the pole bonding device where the first capillary and the second capillary are separated. FIG.

図中、ｌは集積回路の基板、２は該基板１にダイボンデ
ィングさ′！１だ半導体チップ、３は前記の電極パッド
、これらｌと２と３は図示されないボンディング＆＝　
ｔＭの作業台に載置される。ヌ、４は前記ボンディング
装置に具備される第一のキャピラリ及び５は前記同＆装
置の第二のキャピラリである。しかして、第二のキャピ
ラリ５にはキャビラリ内毛糺管８を負通して図示６で示
す金線が尋人きれその端部７は金線６の水累焔切断時生
成されたポール端が示される。In the figure, l is a substrate of an integrated circuit, and 2 is die bonding to the substrate 1'! 1 is a semiconductor chip, 3 is the aforementioned electrode pad, and these 1, 2, and 3 are bonding &= not shown.
It is placed on tM's workbench. Nu, 4 is a first capillary provided in the bonding device, and 5 is a second capillary of the bonding device. The second capillary 5 is passed through the capillary tube 8 inside the capillary, and the gold wire shown in the figure 6 is cut off. shown.

しかして図示状態は、ボンディング装置の第一のキャピ
ラリ４がパッド面３と軽微な荷重（Ｐ、）で肖接、かつ
キャピラリ励振の超音波エネルギ（Ｆｌ）が付勢されア
ルミニウム電極表面が清浄にされる状態を示している。Therefore, in the illustrated state, the first capillary 4 of the bonding device is in contact with the pad surface 3 with a slight load (P,), and the ultrasonic energy (Fl) of the capillary excitation is applied to clean the aluminum electrode surface. Indicates the state in which the

前記清浄とされたアルミニウム電極底面は、次いで図の
矢印、９にしたがい帛−キャピラリを基板から解放する
と共に水素溶切断の金線ボール端側の第二キャピラリ５
を矢印１０にしたがい当接させボンディングにＰＪＴ襞
とされる正規荷３！Ｌ（Ｐｉ）並ひに超音波励振エネル
ギ（Ｆ２）を印加付勢して、金＆！８がアルミニウム電
極パッド面３に圧接式れる０金線のボンディングが終れ
は第二のキャビンＩＪ　ｔｄ図状態に引上げられ同時に
金線の水素焔切鵬がされる。The cleaned bottom surface of the aluminum electrode is then released from the substrate according to the arrow 9 in the figure, and the second capillary 5 on the end side of the gold wire ball that is cut by hydrogen cutting is removed.
A regular load 3 that is made into PJT folds by contacting them according to arrow 10 and bonding them! Ultrasonic excitation energy (F2) is applied to both L(Pi) and gold &! 8 is pressed against the aluminum electrode pad surface 3. After the bonding of the gold wire is completed, the second cabin IJ is pulled up to the td state, and at the same time, the gold wire is cut with a hydrogen flame.

一３＝ 前記キャピラリ荷重ＰＩとＦ２、及び超音波励振工面図
示ボンディング加工時、ボンディング装置は加熱乾燥の
不活性ガスを噴射せしめる等して安定とするボンディン
グ加工がされる様なっている。13= Capillary loads PI and F2 and ultrasonic excitation surface diagram During the bonding process, the bonding device is designed to stabilize the bonding process by injecting heated drying inert gas, etc.

前記実施側御におけるキャピラリの形状及び構造等は一
例にすぎない。The shape, structure, etc. of the capillary in the above implementation control are merely examples.

（ｇ）　　づ６明の効果 前配本発Ｌ）９のワイヤボンディング方法によれば、例
えば第二のキャピラリ側の水累焔による金線切断時、第
一のキャピラリで前記機械的清浄化の励振をすれは、係
るボンディング工程における接続時間を増加させること
もなくしたがって加工能率を低下させないで極めて信頼
性の高いリード接続が可能となる等本発明の効果は大き
い０(g) According to the wire bonding method of L) 9 of the present invention, for example, when the gold wire is cut by the water flame on the second capillary side, the mechanical cleaning is excited in the first capillary. By doing so, the present invention has great effects, such as making extremely reliable lead connections possible without increasing the connection time in the bonding process and reducing processing efficiency.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明の実施例を示すボンディング装置ｉ部の簡略
断面図である０図中、２は半導体テップ、４− 第一のキャピラリ及び第二のキャピラリ、６は金線及び
７は６のボール端部である。The figure is a simplified cross-sectional view of part i of a bonding apparatus showing an embodiment of the present invention. This is the end.

Claims (1)

【特許請求の範囲】[Claims] 第一のキャピラリと第二のキャピラリとを具えるポール
ボンディング装置によりアルミニウム等＊億形成の半導
体チップへ金線を圧着接続するに当り、前記第一のキャ
ピラリで電極形成面の清浄化を、杉清浄化電極面に第二
のキャピラリで金線ボンディングをなすことを特徴とす
るワイヤボンディング方法。When a gold wire is crimped and connected to a semiconductor chip made of aluminum or the like using a pole bonding device equipped with a first capillary and a second capillary, the surface on which the electrode is formed is cleaned using the first capillary. A wire bonding method characterized by performing gold wire bonding on a clean electrode surface using a second capillary.
JP57072443A 1982-04-28 1982-04-28 Wire bonding Pending JPS58190035A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57072443A JPS58190035A (en) 1982-04-28 1982-04-28 Wire bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57072443A JPS58190035A (en) 1982-04-28 1982-04-28 Wire bonding

Publications (1)

Publication Number Publication Date
JPS58190035A true JPS58190035A (en) 1983-11-05

Family

ID=13489430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57072443A Pending JPS58190035A (en) 1982-04-28 1982-04-28 Wire bonding

Country Status (1)

Country Link
JP (1) JPS58190035A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61181405A (en) * 1985-02-08 1986-08-14 遠藤　左介 Toothbrush
US7021521B2 (en) * 1998-10-28 2006-04-04 International Business Machines Corporation Bump connection and method and apparatus for forming said connection
JP2010147450A (en) * 2008-12-22 2010-07-01 Shinji Onabeda Ultrasonic bonding method, and ultrasonic bonding apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61181405A (en) * 1985-02-08 1986-08-14 遠藤　左介 Toothbrush
JPH0136365B2 (en) * 1985-02-08 1989-07-31 Sasuke Endo
US7021521B2 (en) * 1998-10-28 2006-04-04 International Business Machines Corporation Bump connection and method and apparatus for forming said connection
JP2010147450A (en) * 2008-12-22 2010-07-01 Shinji Onabeda Ultrasonic bonding method, and ultrasonic bonding apparatus

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