JPS58189370A - Sputtering device - Google Patents

Abstract

PURPOSE:To improve the performance of a sputtering device by providing magnetic field generating means on the rear surface side of a target, and using a soft magnetic material having high magnetic permeability in constituting an end part of a magnetic pole of said means facing the target. CONSTITUTION:Cylindrical frame bodies 31, 32 which consist of a soft magnetic material of high magnetic permeability having the convergent forward end faces facing each other are disposed on the rear surfaces at the ends on the target T1, T2 sides in target holders 11, 12, and permanent magnets 33, 34 are disposed in tight contact with the root end faces of the bodies 31, 32. The magnetic poles thereof are so arranged that the different poles face each other. The inside of a vacuum vessel 10 is evacuated thoroughly through an evacuation port 40 with an evacuation system, whereafter a sputtering gas is introduced from a gas introduction system through an introduction port 50. Sputtering electric power is supplied to shielding rings 13, 14 and the targets T1, T2 from a sputtering power source 60, whereby sputtering is accomplished and the thin films conforming to the targets T1, T2 are formed on a substrate 20. the uniform thin films are thus formed uniformly and widely at a low temp. in high speed.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention aims to improve sputtering equipment, and furthermore, to improve sputtering equipment such as a target sputtering equipment such as a target sputtering equipment.
The present invention relates to an improvement of a sputtering apparatus in which a magnetic field generating means for forming a plasma is provided in the body.

In recent years, research and development of ultra-LSIs, optical cage devices, and devices for recording degrees are based on air vaporization, +
It is possible to create glands of materials with a melting point or Y6 temperature that cannot be produced using the I1I method.

There is a strong desire to manufacture k・9 while controlling the
Sputtering has been widely accepted as a technology that can form films on most substrates for any species of feathers, and vigorous research and development efforts are currently underway to overcome its drawbacks. And in that direction, it will become a city.

With the trend toward lower temperatures, there are already many proposals for the Hashira-style sputtering method.

One of the inventors of the present invention also developed a facing target sputtering system as a sputtering method that can perform multi-speed, low-temperature sputtering and can also be applied to magnetic materials.
Vol. 8, No. 6 (197a) P558-P559). This facing target type sputtering apparatus t is constructed as shown in Figure 'a1. That is, unlike the conventional 2@ sputtering apparatus in which a vacuum chamber internal pressure substrate and a target are placed in opposing fields, a pair of targets T++Txt- sputtering surfaces T1s and Tom to be sputtered are placed in the vacuum chamber 10 so that they face each other in parallel across a space. and the substrate 20 is T1
．． Targetera F "I +" from the board holder 21vC installed on the side of T. It is placed on the side of the space so as to surround the space. Then, the coil provided around the vacuum chamber lOJ, (0 causes a sputter recess Tl s, 72 s
This is to generate a magnetic field H in a direction perpendicular to . In addition, in the figure, 11, 12i1 iron to 16 terminal holder, 13.14 are pins 7-root for bottling.

Therefore, after evacuating the inside of the vacuum chamber 10 through the exhaust port 40 by an exhaust system (not shown), a sputtering gas such as argon is introduced from the gas introduction system (not shown) through the inlet s o '(r). The shield 13.14 and therefore the vacuum chamber 10 are connected to the anode (ground) K by a sputtering power source 60 consisting of a self-current power source.

Sputtering is performed by supplying sputtering power using the target 'r, j T2 as a cathode and generating the above-mentioned magnetic field H using the coil 30, and sputtering is performed on the base &20 with a composition corresponding to TI*T*. A II film is formed.

At this time, due to the above-mentioned configuration, the sputtering surfaces Tl s , TI
Since a magnetic field is applied perpendicular to 1, high-energy electrons are confined in the space between the opposing targets TIr'r2, and ionization of the sputtering gas is promoted here, resulting in a high sputtering rate. Can form a film. Furthermore, since the base 20 is placed on the side of the target (T1 r T2) instead of facing the target as in conventional sputtering equipment, collisions of high-energy ions and electrons onto the substrate 20 are almost eliminated. In addition, thermal radiation from T, , T, is small, and the rise in substrate temperature is small, so that low-temperature film formation is possible. Furthermore, since the magnetic field is applied in the perpendicular direction to the target layer T, , 'r as a whole, the magnetic field acts effectively even if a magnetic material is used for the target 0-, allowing high-speed film formation.

The main objectives of the present invention are to improve the above-mentioned opposed target type snow sputtering device, namely, [1] improve the use efficiency of the target by widening and uniformly sputtering the surface of the target; 2) Improve the cooling efficiency of the target, further change the steering force to form a film at low temperature and high speed, and [3] Moreover, fold the space of the opposing target! [4] Compact and inexpensive configuration of facing target type snowball (mainly intended to provide an ivy device, or the back of four other types of targets), which made it possible to greatly increase the It can also be effectively applied to a sputtering apparatus equipped with a magnetic field generating means.

That is, the present invention provides a sputtering apparatus in which a magnetic field generating means is provided on the back surface II of the target, and that 'the welding end of the magnetic field generating means facing the target is made of a soft magnetic material with high magnetic permeability. It is something to do.

Note that the above-mentioned contact end portion refers to an end portion of the magnetic field generating means that generates substantial lines of magnetic force, and may be integrated with or separate from the magnetic field generating source of the magnetic field generating means.

In addition, soft magnetic materials with high magnetic permeability can be used as long as they are used as core materials for ordinary transformers, etc. Specifically, soft magnetic materials such as mild steel, silicon steel, and permalloy can be used, but they have high magnetic permeability. A material with a higher saturation magnetic flux density is preferable.

The advantages and disadvantages of the present invention will be explained with reference to the drawings, taking the above-mentioned facing target sputtering apparatus as an example.

FIG. 2 is a schematic diagram of the embodiment of the present invention.

Note that the same symbols are used for the same parts as in FIG. 1.

As is clear from the figure, the arrangement of the target T1 + "2 and the substrate 20 in the vacuum chamber 10 and the supply of sputtering power F
ii The conventional facing target type suba shown in Figure 1. It is the same as the Tsuta i device.

However, the target holder 11.12#'i cavity Sakaki construction has cooling water supply pipe 17a, ljl & and discharge pipe 1.
7b and 18b can be cooled, and the insulating member 15.
It is attached to the vacuum chamber 10 via 16. Note that the target holders 11 and 12 are made of a non-magnetic material such as SUS material.

The magnetic field generating means is the coil 3 of the conventional device shown in FIG.
In praise of 0, there is none as follows. That is, the l-gate 7 T+ * in the target holder 11.12
Tm @ m fi-care) Tr * Highly transparent material such as silicon steel whose distal end is thinner than its proximal end and is arranged along the fiber side of Tt so that its distal end face faces the back surface of Tt. An rm-shaped frame 31.32 made of a soft magnetic material, and a cylindrical frame 31.32 having almost the same frame shape as the cylindrical frame 31.32 disposed on the base end surface of the cylindrical frame 31. It is composed of permanent magnets 33° and 34, and the magnetic poles of the permanent magnets 33° and 34 are arranged so that different poles face each other as shown in the figure,
It is. Therefore, by using the permanent magnets 33, 34 as the magnetic field generation sources and the cylindrical frames 31 and 32 as the magnetic pole ends, the magnetic field H is generated only in the periphery in the vertical direction as shown in the figure. ) T, , Tt is formed in a simple shape surrounding the space between T, Tt.

With the above configuration, in the same way as the conventional facing target type sputtering apparatus described above, the inside of the vacuum chamber 1G is sufficiently evacuated from the exhaust port 4o by the air system, and the gas introduction thread is passed through the inlet port 50. sputtering gas is introduced from K, and sputtering power is supplied from the sputtering power source 6o to the shield links 13 and 14 and the targets T, , T. Sputtering is performed from K, and the targets T, , 'r, i
c A corresponding Hakurei is formed.

By the way, as mentioned above, the magnetic field generating means is T1
．． Since the configuration is provided only behind the target T, the magnetic field is limited to the target T,, -, but if the magnetic field is suitable, high-energy γ electrons etc. t-#! Similar to the conventional device shown in Fig. 1, it is possible to confine the target to T, , , and .

Therefore, with this configuration as well, high-speed 1iI signal formation can be achieved, similar to the conventional device shown in FIG.

As described above, according to the present invention, unlike the conventional facing target type sputtering apparatus shown in FIG. 1, there is no need to provide external coils, and the entire apparatus can be miniaturized. This is a very significant effect in industrial-scale installations where the equipment becomes larger.

My father, with J. No. 1, explained how to use permanent magnets by minimizing the magnetic field application space. This eliminates the need for complicated DL communication devices, improves the reliability of the entire device, and makes it possible to create an inexpensive device as a whole. e! llcs As a magnetic field generating means, the southern part of the magnetic pole of the cylindrical frame and the cylindrical permanent magnet are connected to the target T1. T! Since the target can be cooled uniformly and efficiently over a wide area, even if the sputtering power is increased and the film formation rate is increased, the II from the sputtering direction is !
l Heat radiation can be suppressed to a small level.

Furthermore, whereas the common target sputter FTl+''2 sputters intensively in the middle part, the opposed target sputter 4I&e according to the present invention has the effect that the target surface is sputtered uniformly.

Salt mountains that can achieve this effect can be thought of as follows. That is, as shown in the embodiment, the cylindrical frame 3 that becomes the magnetic pole tip
By providing 1.32 at the periphery of the target h1, a cylindrical magnetic field is formed as described above, and the magnetic field I! is formed in the space surrounding the target "S", 1% of the target.For this reason, high-energy electrons and ions in the plasma are mostly confined within the space between the target "S" and the target "1 a" by the magnetic field wall. Since the magnetic field is weak in areas other than the periphery of T11-, it does not restrict the flight plate of electrons and ions. Therefore, the electrons energized by the electric field near the target surface fly over a wide area of the target TI a Tm. The density distribution of the sputtering gas ions is made uniform within a wide area of the target T1.TI.It is thought that by uniformly distributing the sputtering gas ions, an effect is obtained in which the target surface is sputtered all at once.

In addition, the magnetic field generating means is arranged along the pigtail part of the tagera) TI, T, and the cylindrical frame body 3], 32 made of magnetic material and its & Since it is composed of the cylindrical permanent magnets 38 and 34 that are in close contact with the smoke 11, it is possible to obtain sputtered seedlings that are excellent in the following properties.

That is, the magnetic field can be formed by exerting the %Qs as a magnetic pole through the magnetic pole tin part made of a high magnetic permeability soft magnetic material, so depending on the arrangement of the tip of the mums, the target area of the wall of the magnetic field (T) , , T! Positional relationship with #J4!
It is possible to grow only on the outer periphery. Urge me,
Compared to the case of only Mizukumenite, which does not have a (material)-shaped structure that serves as the i-conducting edge, the region where γ electrons can be strongly suppressed can be limited to only the outer periphery of the target, and the sputter gas The return distribution of ions can be expanded over a wide area of the target Tla T2.

Also,? By interposing the magnetic pole end of the MJ magnetic permeability soft magnetic member, the demagnetizing field of the permanent magnet is reduced and the magnetic field formed at the outer periphery of the target is strengthened, so sputtering can be performed by widening the distance between the faces of the facing targets. *Becomes I-.

Historically, due to the presence of the magnetic pole tip of a high magnetic permeability soft magnetic member, a uniform magnetic field from the permanent magnet is formed at the outer edge of T1゜T, so the area where γ electrons are suppressed becomes uniform. , the number of grudges in the target's eroded area increases.

Tsuyoshi, target TI of the shape and dimensions of the cylindrical frame of the magnetic pole tip.
By making the tip side facing the back side of the TI thinner, it becomes easier to increase the cooling capacity of the target.

In addition, since the magnetic field end is a separate cylindrical frame and the lines of magnetic force are generated from the tip, the permanent magnet 3 which becomes the magnetic field generation source
Since the dimensions and arrangement of the permanent magnets 33 and 34 only need to be incorporated into the target boulder, the permanent magnets 33 and 34 can be manufactured easily and the sputtering apparatus can be made inexpensive.

Although the present invention has been described above based on Examples, the present invention is not limited to such Examples KII.

This will be explained using a facing target sputtering device as an example.

However, the present invention can also be effectively applied to a sputtering apparatus, for example, a magnetron type sputtering apparatus, in which the magnetic field generator IIi is arranged on the back side of the target to form a magnetic field on the front side of the target.

In addition, the tip of the magnetic Ik is thinner than the base.
The m-plane has a wedge-shaped cylindrical frame, but its shape is designed to effectively channel the magnetic flux from the magnetic field source to form a narrow magnetic field from the tip. , Therefore, it is sufficient if its Ill cross section is tapered.

Furthermore, although the 4Iay1-% production means is shown as being housed in the target holder, it should be designed appropriately depending on the configuration of the target portion, and it goes without saying that it may be provided on the outer periphery of the target holder.

μ) As mentioned above, the present invention allows sputtered particles such as γ electrons to be
This greatly contributes to improving the efficiency of the magnetic field generating means that creates a magnetic field on the front side of the target that increases the plasma density by increasing plasma density, and has a very large effect on improving the performance of sputtering equipment equipped with such a magnetic field generating means. It is.

[Brief explanation of the drawing]

1g1 is an explanatory diagram of a conventional f. facing target type sputtering apparatus, and FIG. 2 is a fin view of the facing target type sputtering apparatus according to the present invention. 10 is a vacuum rod, 2G is a substrate, 31.32 is a cylindrical frame, and 33.3'4 is a permanent magnet. 1st diagram

Claims (1)

[Scope of Claims] 1. In a sputtering apparatus in which a magnetic field generating means is provided on the back side of a target, a magnetic field end portion of the magnetic field generating means facing the target is made of a magnetic material with high magnetic permeability.
4? A sign of a spacta attack! . λ A sputtering apparatus according to claim 1, wherein the side cross section of the a-glue 7IA section is tapered. The sputtering apparatus according to claim 1 or Fi 2, wherein the cylindrical crushing body is formed along the periphery of the target. 4. Claim I! wherein the magnetic field generating means comprises the cylindrical frame of the magnetic field and an m-shaped magnet disposed concentrically behind the cylindrical frame. Sputtered iron as described in Section 3. 5 @ The tip of the grape-shaped frame at the magnetic pole end is made thinner than the base.