JPS58185794A - Activated palladium solution - Google Patents
Activated palladium solutionInfo
- Publication number
- JPS58185794A JPS58185794A JP6529882A JP6529882A JPS58185794A JP S58185794 A JPS58185794 A JP S58185794A JP 6529882 A JP6529882 A JP 6529882A JP 6529882 A JP6529882 A JP 6529882A JP S58185794 A JPS58185794 A JP S58185794A
- Authority
- JP
- Japan
- Prior art keywords
- palladium
- plating
- examples
- tungsten
- precipitation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000002940 palladium Chemical class 0.000 title claims description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 58
- 229910052763 palladium Inorganic materials 0.000 claims description 28
- 230000004913 activation Effects 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 9
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims description 2
- 239000008139 complexing agent Substances 0.000 claims 1
- 238000007747 plating Methods 0.000 description 15
- 238000001556 precipitation Methods 0.000 description 12
- 239000002738 chelating agent Substances 0.000 description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 10
- 229910052721 tungsten Inorganic materials 0.000 description 10
- 239000010937 tungsten Substances 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 4
- -1 palladium ions Chemical class 0.000 description 4
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 4
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000007062 hydrolysis Effects 0.000 description 3
- 238000006460 hydrolysis reaction Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 description 3
- 239000004471 Glycine Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000013522 chelant Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- BBKFSSMUWOMYPI-UHFFFAOYSA-N gold palladium Chemical compound [Pd].[Au] BBKFSSMUWOMYPI-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910003445 palladium oxide Inorganic materials 0.000 description 2
- GPNDARIEYHPYAY-UHFFFAOYSA-N palladium(ii) nitrate Chemical compound [Pd+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O GPNDARIEYHPYAY-UHFFFAOYSA-N 0.000 description 2
- JQPTYAILLJKUCY-UHFFFAOYSA-N palladium(ii) oxide Chemical compound [O-2].[Pd+2] JQPTYAILLJKUCY-UHFFFAOYSA-N 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 241001062872 Cleyera japonica Species 0.000 description 1
- 206010011224 Cough Diseases 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 229910021130 PdO2 Inorganic materials 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 235000013405 beer Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000009920 chelation Effects 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 210000003739 neck Anatomy 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
- Chemically Coating (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明はチューナ、ＩＣパッケージなどのセラミ、クス
基板上にタングステン、モリブテンなどの金属で形成さ
れたバタンに電気化学的置換反応を用いてパラジウムを
付着させるに有効な活性化処理液に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention provides an effective active material for attaching palladium to a batten made of metal such as tungsten or molybdenum on a ceramic substrate such as a tuner or an IC package using an electrochemical substitution reaction. This relates to chemical treatment liquids.
セラミックス基板の導体パタンにはタングステン、モリ
ブテンなどの耐熱性か良く、熱収縮が小さい金属を用い
る。For the conductor pattern of the ceramic substrate, metals such as tungsten and molybdenum with good heat resistance and low thermal shrinkage are used.
そのためその後工程で行なうＮ ｉＳＡ ｕめっき勿行
なう揚重、パラジウムによるｌ？５性化が必須条件とな
る。すなわち、パラジウムの活性化がないとめっきが不
可能である。Therefore, the lifting weight of NiSAu plating performed in the subsequent process, and the weight of palladium. Pentasexuality is an essential condition. That is, plating is impossible without activation of palladium.
また、パラジウム活性准の性舵かめっきとしての貴意と
なっている。It is also useful as a metal plating for palladium activation.
従来、この活性化赦には、微性タイプとアルカリ性タイ
プかある。ば注タイグは珈化パラジウムに墳はを加えた
浴であり、アルカリ性タイプは墳化パラジウムにＭｌ）
ＴＡなどのキレート剤を加えたももである・しかし、こ
れらの蔭では、後工程でのニッケルめりきにおいて、槽
々の間亀が生じた。Conventionally, there are two types of activation: microtype and alkaline type. Banoteigu is a bath made of palladium chloride plus Ml).
However, in the case of chelating agents such as TA, cracks occurred between the tanks during the nickel plating process in the subsequent process.
すなわち、前者の浴では、強酸性にするためタングステ
ンの表面が酸化され、パラジウムとのＩ−声が起きｍ＜
、二ｙケルめっきが析出むらを生じたり、密着不良を生
じた。That is, in the former bath, the surface of tungsten is oxidized to make it strongly acidic, and I-sound with palladium occurs.
, 2Y Kel plating caused uneven precipitation and poor adhesion.
一方、アルカリ性タイプのｇＤＴ＆浴では、析出過剰と
なり、バタン外にもパラジウムが付着し、ニッケルめっ
きがセラミック上全体に析出してしまうという問題が起
きた◎
本発明の目的は、上記した従来のパラジウム−１゜活性
化准の欠点をなくシ、セラミックス基板のバタン外に付
着することなく、密書性のよいめりきを行なうだめのパ
ラジウム活仔化＊Ｖ従供するにある。On the other hand, with alkaline type gDT & bath, there was a problem that excessive precipitation occurred, palladium was deposited outside the baton, and nickel plating was deposited all over the ceramic. The purpose is to eliminate the shortcomings of -1° activation and to provide palladium activation*V which allows for good marking with good writeability without adhering to the outside of the ceramic substrate.
我々は軸々検討し、以下のことか判った。We investigated the matter thoroughly and found the following.
すなわち、タングステンは液Ｐｌイが６より低いと（１
）式の反応で酸化物を形成し、６より貴いと（２）式の
反応
Ｗ ＋５８２０ ＝ＷＯ３＋６Ｈ＋＋６６−−（１
）Ｗ ＋４Ｈ２０＝ＷＯ”ｒ＋８Ｈ＋＋６ｅ −（
２）が起き、タングステン酸とな９、俗解する。In other words, when the liquid Pl is lower than 6, tungsten becomes (1
), and if it is nobler than 6, the reaction of formula (2) W +5820 = WO3+6H++66--(1
)W +4H20=WO"r+8H++6e -(
2) occurs, and tungstic acid is formed.9, commonly understood.
また、空気中などで酸化され、酸化膜を形成しても６よ
り渦いＰＨでは（３）式の反応により、俗解する。Moreover, even if it is oxidized in the air and forms an oxide film, it is generally understood that at a pH higher than 6, the reaction of formula (3) occurs.
ＷＯａ 十ＨｚＯ＝ＷＯ”４ ＋２Ｈ” −（３）
−万、パラジウムはタングステンより電位が黄にあるた
め、（４）式により、金鴫パラジウムを析出する。すな
わち、１１（Ｉｌ！反応を生ずる。WOa 10HzO=WO"4 +2H" -(3)
-10,000 Since palladium has a yellower potential than tungsten, gold-dip palladium is deposited using equation (4). That is, a 11(Il! reaction occurs).
Ｐｄ”＋２６ − Ｐｄ （４）したがって、
ＶＰＬＰＨが６より低い礪汗にはタングステンの酸化膜
の上に金剛パラジウムを析出することになり、めっきの
密部性が惑くなるととも析出むらか生ずる。Pd”+26 − Pd (4) Therefore,
When the VPLPH is lower than 6, Kongo palladium will be deposited on the tungsten oxide film, and the density of the plating will be compromised and uneven deposition will occur.
したがって、パラジウム活性化Ｖは練性タイプよりアル
カリ性タイプの方がよい＠
さらにアルカリ性タイプは既に生じた咳化纏會浴解させ
るので、より一層効果的でめる・一方、パラジウムは（
４）式で金−パラジウムを析出させなけれはならないが
、この硼叶、パラジウムイオンとして存在する時に限る
。パラジウムイオンはキレート剤が存在しない堝紗、推
ＰＨ１より低い時にのみ存在し、そのＰＨ＋１より島い
鳩ピは加水分解が起き、コロイド物を生成し、（５）、
（６）式の反応で酸化パラジウム會形戚する。Therefore, the alkaline type of palladium-activated V is better than the kneaded type. Furthermore, the alkaline type dissolves the cough that has already occurred, making it even more effective. On the other hand, palladium (
Although it is necessary to precipitate gold-palladium using the formula 4), this is only possible when the gold-palladium is present as palladium ions. Palladium ions exist only when the pH is lower than 1 when no chelating agent is present, and when the pH is lower than 1, hydrolysis occurs and colloids are produced (5).
Palladium oxide is formed by the reaction of formula (6).
Ｐｄ”＋ Ｈ２Ｏ−ＰｄＯ＋２）１” −（ｓ＋）’
ｄ” ＋ ８２（Ｊ −ＰｄＯ２＋４Ｈ＋２ｅ
−（６１ここで、パラジウムについては２つの間両かめ
る。一つは生成する酸化パラジウムでるり、これは、次
工程でのニッケルめりきで、密１＃４小良や析出むらが
生じる。まだ期の一つはパラジウムのコロイド生成物で
、これは吸着性が大きいため、セラミックス基板のタン
グステンバタン以外に付着する。Pd"+ H2O-PdO+2)1"-(s+)'
d” + 82(J −PdO2+4H+2e
-(61 Here, palladium is mixed between two parts. One is the palladium oxide produced, and this is nickel plating in the next process, which causes fine 1 #4 fine and uneven precipitation. One of the factors is the colloidal product of palladium, which is highly adsorbent and therefore adheres to areas other than the tungsten batten on the ceramic substrate.
このため、めっきの析出過剰が起きる。そこで、これら
の間−を解決するため、パラジウム宿性化液には、種々
のキレート剤を添加しである。For this reason, excessive precipitation of plating occurs. Therefore, in order to solve these problems, various chelating agents are added to the palladium accommodation solution.
本発明は上記の問題を防止するためのＭ効なキレート剤
を見出した点にある。The present invention is based on the discovery of an M-effective chelating agent for preventing the above-mentioned problems.
すなわち、従来のアルカリ性タイプの活性化液では、上
記の問題を完全に解決できない。That is, conventional alkaline type activating liquids cannot completely solve the above problems.
以下、本発明について、詳細に説明する・水溶性パラジ
ウム塩は塩化パラジウム、硫酸パラジウム、硝酸パラジ
ウム々どが使用できるが、経済的な理由から主に、塩化
パラジウムを用いる。The present invention will be described in detail below. - As the water-soluble palladium salt, palladium chloride, palladium sulfate, palladium nitrate, etc. can be used, but palladium chloride is mainly used for economical reasons.
パラジウム塩の濃度は賃金楓で、島価であるのでできる
だけ、低濃度にする必要がある・しかし、侠９、低いと
パラジウムが析出しにくくナリ・めっきの不析出、析出
むらを起こす。Since the concentration of palladium salt is low, it is necessary to keep the concentration as low as possible.However, if it is low, palladium will be difficult to precipitate, causing plating, non-precipitation, and uneven precipitation.
遇する良度はＰｄ として５×１０−５〜１０−２２
＋
ＭＯ４／ｌである。The quality encountered is 5 x 10-5 to 10-22 as Pd.
+MO4/l.
アルカリ金属水酸化物基はＰＨ調螢剤で、水酸化ナトリ
ウム、水酸化カリウム、水酸化リキウムが使用できるが
、主に安価な水酸化ナトリウムを用いる。活性化液のＰ
Ｈは上記に示したようにアルカリ性領域が良く、キレー
ト剤とのキレート反応を起こす点からも、ＰＨ１８μ上
に上げた方がよい。The alkali metal hydroxide group is a PH adjusting agent, and sodium hydroxide, potassium hydroxide, and lithium hydroxide can be used, but sodium hydroxide, which is inexpensive, is mainly used. P of activation liquid
As shown above, H is preferably in the alkaline region, and it is better to raise the pH above 18μ from the viewpoint of causing a chelate reaction with the chelating agent.
本発明で重要となるキレート剤はエチレンジアミン（Ｎ
ｌ２ ０Ｈ２０Ｈ２Ｎｌ２）、プロビレ／ジアミン（Ｎ
ｌ２−ＣＨ２ＣＨＮ）（２０Ｈａ）ブチレンジアミン（
Ｎｌ２ ０Ｈ２０ＨＮｌ２ ０Ｈ２ＣＨ２）で、エチレ
ンジアミンの誘導体である。The chelating agent that is important in the present invention is ethylenediamine (N
l2 0H20H2Nl2), probile/diamine (N
l2-CH2CHN) (20Ha) Butylene diamine (
Nl2 0H20HNl2 0H2CH2) and is a derivative of ethylenediamine.
これらのキレート剤はパラジウムイオン（Ｐｄ２±４配
位）と（７）式の反応を起こし、安定な平面構造を形成
する。These chelating agents cause a reaction of formula (7) with palladium ions (Pd2±4 coordination) to form a stable planar structure.
Ｐｄ”＋２Ｌ ÷ Ｐｄ”Ｌ２ β２ ＝ ２
６ （７）ここでβ２はキレート生成定数
キレート生成定数β２の値から刊るように従米使用のキ
レート剤（ＥＤＴＡ、グリシン）より大きい。Pd”+2L ÷ Pd”L2 β2 = 2
6 (7) Here, β2 is larger than the chelating agent used in Japan (EDTA, glycine) as shown from the value of the chelate formation constant β2.
したがりて、パラジウムイオンの加水分解を防止すると
ともに液の寿命を長くすることができる。Therefore, hydrolysis of palladium ions can be prevented and the life of the liquid can be extended.
以下、実施例に従りて説明する。Examples will be explained below.
評価用のサンプルを図１に示す、この試料はセラミック
ス基板上にタングステンメタライズ層を正号形（２，５
Ｘ２５ｍｍ）に約１０１ｄに分け、形成させ、パラジウ
ムの付着の程度、すなわち・めりきの析出むらの程度を
確実に評価しようとしたものである。The sample for evaluation is shown in Figure 1. This sample has a tungsten metallized layer on a ceramic substrate in a positive shape (2,5
The objective was to reliably evaluate the degree of palladium adhesion, that is, the degree of uneven precipitation of plating.
セラミックス基板試料をめっきするまでの工程を図２に
示す。また、実験槽はビー力５０〇−に各工程に要する
液を入れ、ウォータパスにて温度調整した。実施例すな
わち、各組成で得たパラジウム活性化液の評価結果を表
１に示すが３、ニッケルめっきの析出＆［については、
繍倣榊にて観察し、確認した。Figure 2 shows the steps up to plating a ceramic substrate sample. In addition, the experimental tank was filled with liquids required for each process in a 500° beer pressure vessel, and the temperature was adjusted using a water path. Examples, that is, the evaluation results of the palladium activation liquid obtained with each composition are shown in Table 1.
This was confirmed by observation at Sakaki.
８１４生、チー７”τ−１３＜Ｉ％ｔｌＬζい○ チー
ツーて１よく両首Ｘ実施例１〜１６までは本弁明で得た
結果であり１７〜１９までは比較として、従来例を上け
た。814 raw, Qi 7"τ-13<I%tlLζ ○ Qi two te 1 well both necks .
まず、本発明例から説明する、実施例１〜４まではパラ
ジウムイオンの磯ｆを震えたものである。パラジウムイ
オの低下はめっきが析出し暖くなる。すなわち、タング
ステンとのｋｍ反応が起き難いことがわかる。First, Examples 1 to 4, which will be explained from the examples of the present invention, are those in which the palladium ion rock f was used. The drop in palladium io causes the plating to precipitate and become warmer. That is, it can be seen that the km reaction with tungsten is difficult to occur.
したがって、パラジウム一度は１０−６Ｍ０ｔ／を以上
が適切である・
実施例５〜６はパラジウム塩として、塩化パラジウム以
外に硝酸パラジウム、硫酸パラジウムでも使用できる例
を示しだものである。Therefore, it is appropriate for the palladium to be at least 10 -6 M0t/. Examples 5 and 6 show examples in which palladium nitrate and palladium sulfate can be used in addition to palladium chloride as the palladium salt.
また、実施例７〜８はキレート剤として、プロピレンジ
アミン、ブチレンジアミンでも使用できる例で、エチレ
ンジアミンの置換誘導体で、パラジウムイオンとの生成
定数はほとんど同じである。実施９〜１２はパラジウム
イオンとキレート剤とのモル比を変えたものである。Further, Examples 7 and 8 are examples in which propylene diamine and butylene diamine can also be used as chelating agents, which are substituted derivatives of ethylene diamine and have almost the same production constant as palladium ion. In Examples 9 to 12, the molar ratio of palladium ion and chelating agent was changed.
２＝１であると完全にキレート化しないため、加水分解
が起き過剰析出する。したがって、少なくとも１＝１以
上必要である。When 2=1, complete chelation is not achieved, resulting in hydrolysis and excessive precipitation. Therefore, at least 1=1 or more is required.
実施例１３〜１６は液ＰＨ値を変えた例である。Examples 13 to 16 are examples in which the liquid pH value was changed.
ＰＨが７より低くなると析出むらとなる。これにタング
ステンとの置換反応が起きにくくなってきたためである
・
一方、実施例１７〜１９の従来例では、Ｅｌ）’１’Ａ
１グリシンにおいては、過剰析出があり、また酸性タイ
プである塩酸では、密着不良が生じた−
貝上、本発明によれば、従来問題になっためっきの析出
過剰、析出むら、密着不良を解決することができ、これ
によって、チューナなどの電子部品の性能、信頼性を著
しく向上させる効果がある。When the pH is lower than 7, uneven precipitation occurs. This is because the substitution reaction with tungsten has become difficult to occur. On the other hand, in the conventional examples of Examples 17 to 19, El)'1'A
With 1 glycine, there was excessive precipitation, and with hydrochloric acid, which is an acidic type, poor adhesion occurred.In addition, the present invention solves the conventional problems of excessive precipitation, uneven precipitation, and poor adhesion of plating. This has the effect of significantly improving the performance and reliability of electronic components such as tuners.
第１図はセラミックス基板のモデル試料を示す図、第２
図はめつき工程を示すブロック図である。
１・・・・・・タングステンメタライズ層２・・・・・
・アルミナ絶縁層Figure 1 shows a model sample of a ceramic substrate, Figure 2
The figure is a block diagram showing the plating process. 1...Tungsten metallized layer 2...
・Alumina insulation layer
Claims (1)
ジウム活性化液において、エチレンジアミン、プロピレ
ンジアミン、ブチレンジアミンのうちから辿はれた１＆
類以上の錯化剤を添加してなることを特徴をするパラジ
ウム活性化液。In the palladium activation solution containing water-bathable palladium salt and alkali metal hydroxide, 1&
A palladium activation liquid characterized by the addition of a complexing agent of a class or higher level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6529882A JPS58185794A (en) | 1982-04-21 | 1982-04-21 | Activated palladium solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6529882A JPS58185794A (en) | 1982-04-21 | 1982-04-21 | Activated palladium solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58185794A true JPS58185794A (en) | 1983-10-29 |
Family
ID=13282868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6529882A Pending JPS58185794A (en) | 1982-04-21 | 1982-04-21 | Activated palladium solution |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58185794A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04365876A (en) * | 1991-06-13 | 1992-12-17 | Ishihara Chem Co Ltd | Selective electroless plating method on copper-based materials |
| JPH04365877A (en) * | 1991-06-13 | 1992-12-17 | Ishihara Chem Co Ltd | Catalyst liquid for copper base material-selecting electroless plating |
| JP2002237497A (en) * | 2001-02-09 | 2002-08-23 | Citizen Watch Co Ltd | Electrode forming method of semiconductor element |
| WO2005106073A1 (en) * | 2004-04-28 | 2005-11-10 | Technic Japan Inc. | Method for electroless plating aluminum surface and catalyst for electroless plating |
| JP2007138218A (en) * | 2005-11-16 | 2007-06-07 | Hitachi Chem Co Ltd | Liquid catalyst concentrate for electroless plating, and plating catalyst providing method using the same |
-
1982
- 1982-04-21 JP JP6529882A patent/JPS58185794A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04365876A (en) * | 1991-06-13 | 1992-12-17 | Ishihara Chem Co Ltd | Selective electroless plating method on copper-based materials |
| JPH04365877A (en) * | 1991-06-13 | 1992-12-17 | Ishihara Chem Co Ltd | Catalyst liquid for copper base material-selecting electroless plating |
| JP2002237497A (en) * | 2001-02-09 | 2002-08-23 | Citizen Watch Co Ltd | Electrode forming method of semiconductor element |
| WO2005106073A1 (en) * | 2004-04-28 | 2005-11-10 | Technic Japan Inc. | Method for electroless plating aluminum surface and catalyst for electroless plating |
| JP2007138218A (en) * | 2005-11-16 | 2007-06-07 | Hitachi Chem Co Ltd | Liquid catalyst concentrate for electroless plating, and plating catalyst providing method using the same |
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