JPS58182290A - Method of forming thick film pattern - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a rhinoceros membrane substrate for a hybrid integrated circuit.

Generally, thick film substrates for hybrid integrated circuits are made of stainless steel mesh J
The thick film paste is transferred to a ceramic substrate using a screen mask using an L-type film, and the desired circuit pattern is formed on the substrate (called the screen printing method). After that, it is fired in a high-humidity furnace. A method is being adopted to do so. In this type of screen printing method, if the lines of the pattern overlap the lines of the screen, there will be an error in the line width of the pattern by the diameter f1, making it difficult to print patterns as fine as several tens of microns. )Ta.

In addition, the thickness of the printed paste is mainly determined by the thickness of the screen and the porosity of the mesh screen, so it requires great skill to achieve the desired thickness.

The present invention was developed in view of the above points, and therefore, in the production of thick film substrates for hybrid integrated circuits, the advantages of conventional thick films such as easy operation, low equipment costs, etc., and low cost are lost. 4) provides a method for forming a thick film pattern that allows a highly accurate pattern to be obtained.

The method for forming a thick film Pern O, which is currently being developed, is a method for forming a required thick film pattern on a substrate. A process of superimposing negative films of the desired pattern and making them non-light, a process of developing the exposed photoresist and removing the unexposed areas, a process of filling the area where the photoresist has been removed with thick film paste, and a process of forming the thick film. It is characterized by the steps of drying the paste-filled substrate, then baking it to solidify the thick film paste, and removing the photoresist.

Hereinafter, the present invention will be explained in detail with reference to the drawings. 1 to 6 are side sectional views showing each step of an embodiment of the method of the present invention. Note that corresponding parts in each figure are given the same reference numbers. In the 1st g,
1 is a substrate for a hybrid integrated circuit such as a ceramic structure, and a photoresist (photosensitive agent) 2 is coated on this substrate 1 to a required thickness of KPfi, that is, the thickness of a pattern to be formed. It is recommended that the photoresist be in the form of a dry film in view of the ease of controlling the film thickness, but a liquid type photoresist may also be used. Next, as shown in FIG. 2, a negative film 3 having a desired pattern is superimposed on the coated photoresist 2, and the photoresist 2 is illuminated with a suitable light source 4 such as a high-pressure mercury lamp. And exposed photoresist 2
When the unexposed portion 5 is removed by development, the substrate 1 is exposed for the required pattern portion 6, as shown in FIG. This required pattern portion, that is, the removal trace 6K of the photoresist 2, is filled with thick film paste 7 using a rubber squeegee, roller, etc. 8, as shown in FIG.

The substrate 1 (FIG. 5) filled with the thick film paste 7 is dried in a humidity chamber or the like (ml not shown). The dried substrate 1 is placed in a conveyor furnace (not shown) heated to several hundred degrees and fired. Through the firing process, the paste 7 forming the pattern is spread onto the substrate 1, and the photoresist 2Fi burns and vaporizes as a vertically concentrated gas. Through the series of steps described above, it is possible to obtain a thick film substrate for a hybrid integrated circuit in which the required thick film pattern 7a is formed on the substrate 1 as shown in the sixth table. The thick film paste used in the above-mentioned manufacturing method may be a conductor, a resistor, or a dielectric paste and may be processed in the above-described steps.

As is clear from the above aBA, if the thick film pattern forming method of the present invention is applied to a thick film substrate used for hybrid integrated circuits, the screen mask used in the conventional screen printing method can be Fine patterns of several tens of microns, which was previously difficult, can now be easily formed on a substrate. By adjusting the thickness of the photoresist used, a pattern with a desired thickness can be obtained. Therefore, compared to the conventional method, it is possible to obtain a thick film pattern with higher precision, and since no special equipment is required, the cost is lower.

[Brief explanation of the drawing]

FIGS. 1 to 6 are side sectional views showing each step of an embodiment of the method for forming a thick film pattern according to the present invention. l...Substrate, 2-7 photoresist, 3...Negative film, 4...Light source, S-unexposed area, 6...Required pattern area (removal trace of photoresist), 7...・
*Change height, 7m--thick film pattern, 8--squeegee, roller

Claims (1)

[Claims] In a method of forming a desired thick film pattern on a substrate,
A process of applying photoresist to a thickness of KWr* on the substrate, a process of overlapping a negative film of the desired pattern on the applied photoresist and exposing it to light, and developing the exposed photoresist to remove unexposed areas. a process of filling thick film paste into the area where the photoresist has been removed; and a process of drying and baking the substrate filled with the thick film paste to solidify the thick film paste and removing the photoresist. A method for forming a thick film pattern based on the percentage of