JPS58179922A - Production of electrode of thin film magnetic head - Google Patents

Production of electrode of thin film magnetic head

Info

Publication number
JPS58179922A
JPS58179922A JP6111682A JP6111682A JPS58179922A JP S58179922 A JPS58179922 A JP S58179922A JP 6111682 A JP6111682 A JP 6111682A JP 6111682 A JP6111682 A JP 6111682A JP S58179922 A JPS58179922 A JP S58179922A
Authority
JP
Japan
Prior art keywords
film
electrode
conductor
magnetic head
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6111682A
Other languages
Japanese (ja)
Other versions
JPH0375924B2 (en
Inventor
Saburo Suzuki
三郎 鈴木
Shunichiro Kuwazuka
鍬塚 俊一郎
Kikuo Iwata
岩田 紀久夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Computer Basic Technology Research Association Corp
Original Assignee
Computer Basic Technology Research Association Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Computer Basic Technology Research Association Corp filed Critical Computer Basic Technology Research Association Corp
Priority to JP6111682A priority Critical patent/JPS58179922A/en
Publication of JPS58179922A publication Critical patent/JPS58179922A/en
Publication of JPH0375924B2 publication Critical patent/JPH0375924B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/31Structure or manufacture of heads, e.g. inductive using thin films

Landscapes

  • Magnetic Heads (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

PURPOSE:To eliminate defects including cavities, etc. and to prevent corrosion when an electrode is formed concurrently with formation of a thin film magnetic head, by deleting the overhang part of a conductor film formed by electroforming with a taper etching process and then forming a protecting film. CONSTITUTION:An electrode lead-out conductor 2, the 1st protecting film 3, a conducting foundation film 4 and a photoresist 5 are formed on a wafer 1. Then a copper conductor 6 is formed by means of a copper sulfate plating solution, etc. for example. A photoresist 10 is patterned for taper etching of the conductor 6. Then an alkaline etching solution of chloric acid, etc. is used to give taper etching to the conductor 6. Thus an overhang area on the resist 5 is completely deleted, and the edge part of the conductor 6 is etched with 30- 40 deg. inclination angle. Then the film 5 is deleted, and an inorganic protecting film 7 is formed. The mechanical processing is applied to the surface of the film 7 to expose an electrode part 6. In sucg a way, an electrode part having high resistance to corrosion is obtained without producing cavities between the film 3 and the electrode 6 as well as crevasses between the electrode 6 and the film 7.

Description

【発明の詳細な説明】 発明の対象 本発明は、薄膜磁気ヘッドの電極製造方法に係り、特に
薄膜磁気ヘッドの形成時と同時に形成される電極の製造
方法に関する。
DETAILED DESCRIPTION OF THE INVENTION Object of the Invention The present invention relates to a method for manufacturing electrodes of a thin film magnetic head, and more particularly to a method for manufacturing electrodes that are formed simultaneously with the formation of a thin film magnetic head.

従来技術 一般に薄膜技術によシ形成される薄膜磁気ヘッドは、第
1図に示す如く、基体であるフェノ・−1と該ウェハー
1上に設けられる磁気ヘッド素子10と電極20とから
構成されている。前記電極20は、磁気ヘッド素子10
の形成時と同時に薄膜技術によシ形成され、外部の端子
間と導通を行なうためのものである。
BACKGROUND TECHNOLOGY Generally, a thin film magnetic head formed by thin film technology is composed of a base phenol-1, a magnetic head element 10 and an electrode 20 provided on the wafer 1, as shown in FIG. There is. The electrode 20 is connected to the magnetic head element 10.
It is formed by thin film technology at the same time as the formation of the terminal, and is used to establish electrical conduction between external terminals.

従来技術による前記電極20の製造方法を第2図を用い
て説明する。第2図(a)乃至(C)は従来技術による
電極の製造工程を示す電極の断面図である。この製造方
法は、まず第1図(a)に示如くウェハー1上に磁気ヘ
ッド素子からの電極引出し用導体2を形成する。次にエ
レクトロフォーミングの際に使用する酸性またはアルカ
リ性の薬品から、磁気ヘッド素子を保護するため第1保
護膜5を形成する。次にエレクトロフォーミングの際の
通電用下地となる銅膜4を真空蒸着またはスパッタリン
グ法で形成した後、フォトレジスト5を2〜10amの
膜厚に形成し、所定の寸法にパターンニングする。次に
安定して厚膜が得られる鋼またはニッケルめっき液を用
い20〜40μm膜厚の金属導体6をエレクトロフォー
ミング法により形成する。この場合、導体6の膜厚がフ
ォトレジスト5の膜厚と同程度の数値までは、導体6の
形状は、フォトレジスト5のパターンニング形状になら
って形成される。しかし導体6の膜厚がフォトレジスト
5の膜厚より厚く形成される場合、導体6の析出は、膜
厚方向だけでなく電気めっきの特徴として、膜厚方向と
垂直に横方向へも導体6の析出が第1図(a)に示す如
く起る。この横方向への析出は、膜厚方向の析出とほぼ
1:1で進行し、20〜40μmの導体6をエレクトロ
フォーミング法で形成した場合には、10〜50μmの
オーツく−ノ1ングが生じることになる。フォトレジス
ト5を除去した際、オーパーツ・ング部の下には、フォ
トレジスト膜厚相当の隙間が生じることになる。第1図
(b)に示す様にその後に真空蒸着またはスノくツタリ
ング法によって無機保護膜7を形成した場合オーバーハ
ング部下の隙間を埋めることができず、導体6の周囲の
無機保護膜7に空洞8およびフレバス9が生じる。この
欠陥は、第1図(C)に示す様に無機保護膜7の表面を
機械加工して導体6を露出させた場合に、電極部の周囲
に現われ耐食性の面から信頼性の低下を招く原因となっ
ている。
A method of manufacturing the electrode 20 according to the prior art will be explained with reference to FIG. FIGS. 2(a) to 2(C) are cross-sectional views of an electrode showing the manufacturing process of the electrode according to the prior art. In this manufacturing method, first, a conductor 2 for leading out an electrode from a magnetic head element is formed on a wafer 1, as shown in FIG. 1(a). Next, a first protective film 5 is formed to protect the magnetic head element from acidic or alkaline chemicals used during electroforming. Next, after forming a copper film 4, which will serve as a base for current conduction during electroforming, by vacuum evaporation or sputtering, a photoresist 5 is formed to a thickness of 2 to 10 am, and patterned to a predetermined size. Next, a metal conductor 6 having a thickness of 20 to 40 μm is formed by electroforming using a steel or nickel plating solution that can stably form a thick film. In this case, the shape of the conductor 6 is formed to follow the patterning shape of the photoresist 5 until the thickness of the conductor 6 is approximately the same as the thickness of the photoresist 5. However, when the conductor 6 is formed thicker than the photoresist 5, the conductor 6 is deposited not only in the film thickness direction but also in the lateral direction perpendicular to the film thickness direction, which is a characteristic of electroplating. The precipitation of occurs as shown in FIG. 1(a). This lateral deposition progresses at a ratio of approximately 1:1 to the deposition in the film thickness direction, and when a 20-40 μm conductor 6 is formed by electroforming, a 10-50 μm thick conductor 6 is formed by electroforming. will occur. When the photoresist 5 is removed, a gap equivalent to the thickness of the photoresist film will be created under the outer ring portion. As shown in FIG. 1(b), if the inorganic protective film 7 is subsequently formed by vacuum evaporation or snobbing, the gap under the overhang cannot be filled, and the inorganic protective film 7 around the conductor 6 cannot be filled. A cavity 8 and a freflux 9 result. This defect appears around the electrode when the surface of the inorganic protective film 7 is machined to expose the conductor 6 as shown in FIG. 1(C), resulting in a decrease in reliability in terms of corrosion resistance. It is the cause.

この様に従来技術による薄膜磁気ヘッドの電極製造方法
は、耐食性の面から信頼性の低下を招くと言う問題点を
有している。
As described above, the conventional method for manufacturing thin film magnetic head electrodes has the problem of lowering reliability in terms of corrosion resistance.

発明の目的 本発明の目的は、上述の従来技術による問題点を除去す
ることであり、空洞あるいはフレパスの発生を防止し、
耐食性の優れた薄膜磁気ヘッドの電極の製造方法を提供
することである。
OBJECTS OF THE INVENTION An object of the present invention is to eliminate the above-mentioned problems caused by the prior art, and to prevent the occurrence of cavities or fringes.
An object of the present invention is to provide a method for manufacturing an electrode for a thin film magnetic head with excellent corrosion resistance.

上述の目的を達成するため本発明にあってはエレクトロ
フォーミング法で形成した導体膜のオーバーハング部分
を、テーパーエツチングを行なうことによりオーバーハ
ング部分を除去した後に保護膜を形成することを特徴と
する。
In order to achieve the above object, the present invention is characterized in that the protective film is formed after the overhanging portion of the conductive film formed by electroforming is removed by performing taper etching. .

発明の実施例 本実施例による製造方法は、第1図(a)に示tように
、導体6形成までは、従来技術による電極部形成法と同
様に実施する。ウェハー1の上に、電極引出し用導体2
、第1保護膜3、通電用下地膜4およびフォトレジスト
5を所定の寸法に形成する。その後、厚膜化容易なエレ
クトロフォーミング法、例えば、硫酸鋼220g/l、
硫酸75g/lからなる硫酸鋼めっき液を用い、銅導体
6を形成する。次に本発明の特徴となる導体6のテーパ
ーエツチングを行なうため、銅導体6の上に、エツチン
グ用フォトレジスト10ヲハターンニングする。この際
、フォトレジスト5は、除去せずに残し、エツチング液
から磁気ヘッド素子を保農する働きを持たせる。次に塩
素酸塩あるいは過硫酸塩のアルカリ性エツチング溶液を
用い、浸漬法あるいは電解法により銅導体1をエツチン
グする。この場合、蕗1保護膜3のパターンニング寸法
と、フォトレジスト5のパターンニング寸法との差が大
きいほどエツチングが容易となる。銅導体6がエツチン
グされ、フォトレジスト5の端部が算出または通電用下
地膜4の銅が溶解する時間をエラチング終点とする。こ
れによシ第d図(b)に示す様に銅導体6のオーバーハ
ング部は完全に除去されかつ銅導体6の端部を30〜4
0度の傾斜角にエツチングすることができる。本実施例
のような構造を有する薄膜磁気ヘッド電極部の導体6を
形成した場合、フォトレジスト5、エツチング用フォト
レジスト10を除去した後に、第1図(0)に示す様に
形成する無機保護膜7は、導体6の傾斜角が40度以下
の場合、充分なステップカバレージを有し、欠陥のない
膜を形成することができる。この無機保護膜70表面を
第1図(d)に示す様に機械加工しても、空洞およびフ
レバスの欠陥が生じないため、耐食性の良い電極部を形
成することができる。
Embodiment of the Invention The manufacturing method according to this embodiment, as shown in FIG. 1(a), is carried out in the same manner as the electrode part forming method according to the prior art up to the formation of the conductor 6. On top of the wafer 1, a conductor 2 for leading out the electrode
, the first protective film 3, the current-carrying base film 4, and the photoresist 5 are formed to have predetermined dimensions. After that, the electroforming method, which is easy to thicken the film, is used, for example, sulfuric acid steel 220g/l,
A copper conductor 6 is formed using a sulfuric acid steel plating solution containing 75 g/l of sulfuric acid. Next, in order to perform taper etching of the conductor 6, which is a feature of the present invention, a photoresist 10 for etching is patterned on the copper conductor 6. At this time, the photoresist 5 is left without being removed and has the function of protecting the magnetic head element from the etching solution. Next, the copper conductor 1 is etched using an alkaline etching solution of chlorate or persulfate by dipping or electrolysis. In this case, the larger the difference between the patterning dimension of the protective film 3 of the butterfly 1 and the patterning dimension of the photoresist 5, the easier the etching becomes. The etching end point is the time when the copper conductor 6 is etched and the end of the photoresist 5 is calculated or the copper of the current-carrying base film 4 is dissolved. As a result, the overhang part of the copper conductor 6 is completely removed and the end of the copper conductor 6 is
It can be etched to a 0 degree tilt angle. When the conductor 6 of the thin film magnetic head electrode part having the structure as in this example is formed, after removing the photoresist 5 and the etching photoresist 10, an inorganic protective layer is formed as shown in FIG. 1(0). When the inclination angle of the conductor 6 is 40 degrees or less, the film 7 has sufficient step coverage and can be formed without defects. Even when the surface of this inorganic protective film 70 is machined as shown in FIG. 1(d), defects such as cavities and flavours do not occur, so that an electrode portion with good corrosion resistance can be formed.

発明の効果 以上述べた様に薄膜磁気ヘッドの電極部の導体膜をエレ
クトロ7オーミングで形成後、その導体膜のオーバーハ
ング部だけを、テーパーエツチングすることを特徴とす
る本発明によればエツチング面積が少なく、エツチング
の際の磁気ヘッド素子の腐食を防止できる。導体膜を5
0〜40度の傾斜角にエツチングすることにより、空洞
およびフレバス欠陥のない、保鏝膜を得ることができ、
薄膜磁気ヘッドの耐食性など信頼性の向上に効果がある
Effects of the Invention As described above, according to the present invention, which is characterized in that after forming the conductive film of the electrode portion of a thin film magnetic head by electro-7 ohming, only the overhanging portion of the conductive film is tapered etched. The corrosion of the magnetic head element during etching can be prevented. 5 conductor films
By etching at an inclination angle of 0 to 40 degrees, it is possible to obtain a protective trowel film free of cavities and flavour defects.
It is effective in improving reliability such as corrosion resistance of thin-film magnetic heads.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は一般の薄膜磁気ヘッドの構造を示す図であり、
第2図(a)乃至(C)は、従来技術による製造方法の
製造工程をそれぞれ示す図、第3図伸)乃至高は、本発
明による電極の製造方法の製造工程をそれぞれ示す図で
ある。 符号の説明 1・・・クエハー      2・・・電極引出し用導
体 3・・・@1保護膜     4・・・通電用下地5・
・フォトレジスト   6・・−導体7・−無機保護膜
     8・・・空洞9・・・フレバス 10・・エツチング用フォトレジスト 寸 1 胆 第2図 才 3 口 (f、) (C)
FIG. 1 is a diagram showing the structure of a general thin film magnetic head.
FIGS. 2(a) to (C) are diagrams each showing the manufacturing process of the manufacturing method according to the prior art, and FIGS. . Explanation of symbols 1...Quahar 2...Conductor for electrode extraction 3...@1 Protective film 4...Base for current conduction 5.
・Photoresist 6...-Conductor 7--Inorganic protective film 8...Cavity 9...Flebast 10...Photoresist size for etching 1 Diagram 2 3 Mouth (f,) (C)

Claims (1)

【特許請求の範囲】[Claims] 磁気ヘッド素子及び該磁気ヘッド素子の信号を外部と連
結する電極とを薄膜技術により基体−ヒに形成する薄膜
磁気ヘッドの電極製造方法において、エレクトロフォー
ミング法で形成した導体膜のオーバハング部分を、テー
パーエツチング法によシ除去した後に保膜膜を形成する
ことを特徴とする薄膜磁気ヘッドの電極製造方法
In an electrode manufacturing method for a thin film magnetic head, in which a magnetic head element and an electrode for connecting signals of the magnetic head element to the outside are formed on a substrate by thin film technology, an overhanging portion of a conductive film formed by an electroforming method is tapered. A method for producing an electrode for a thin film magnetic head, characterized in that a protective film is formed after removal by an etching method.
JP6111682A 1982-04-14 1982-04-14 Production of electrode of thin film magnetic head Granted JPS58179922A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6111682A JPS58179922A (en) 1982-04-14 1982-04-14 Production of electrode of thin film magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6111682A JPS58179922A (en) 1982-04-14 1982-04-14 Production of electrode of thin film magnetic head

Publications (2)

Publication Number Publication Date
JPS58179922A true JPS58179922A (en) 1983-10-21
JPH0375924B2 JPH0375924B2 (en) 1991-12-03

Family

ID=13161779

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6111682A Granted JPS58179922A (en) 1982-04-14 1982-04-14 Production of electrode of thin film magnetic head

Country Status (1)

Country Link
JP (1) JPS58179922A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03198211A (en) * 1989-12-26 1991-08-29 Fujitsu Ltd Production of thin-film magnetic head
US7370406B2 (en) 2003-06-09 2008-05-13 Tdk Corporation Method of manufacturing a thin film structure
US9218831B1 (en) * 2014-09-17 2015-12-22 HGST Netherlands B.V. Side-by-side magnetic multi-input multi-output (MIMO) read head

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03198211A (en) * 1989-12-26 1991-08-29 Fujitsu Ltd Production of thin-film magnetic head
US7370406B2 (en) 2003-06-09 2008-05-13 Tdk Corporation Method of manufacturing a thin film structure
US9218831B1 (en) * 2014-09-17 2015-12-22 HGST Netherlands B.V. Side-by-side magnetic multi-input multi-output (MIMO) read head

Also Published As

Publication number Publication date
JPH0375924B2 (en) 1991-12-03

Similar Documents

Publication Publication Date Title
CA1062658A (en) Making coplanar layers of thin films
US4561173A (en) Method of manufacturing a wiring system
US3634203A (en) Thin film metallization processes for microcircuits
US3827949A (en) Anodic oxide passivated planar aluminum metallurgy system and method of producing
US4402801A (en) Method for manufacturing thin film magnetic head
US5340773A (en) Method of fabricating a semiconductor device
US3314869A (en) Method of manufacturing multilayer microcircuitry including electropolishing to smooth film conductors
JPS58179922A (en) Production of electrode of thin film magnetic head
US4496435A (en) Method of manufacturing thin film circuits
US4176016A (en) Forming electrically insulating layers by sputter deposition
US3793175A (en) Thin film circuits with interconnecting contacts
US3836446A (en) Semiconductor devices manufacture
US3785937A (en) Thin film metallization process for microcircuits
US3634202A (en) Process for the production of thick film conductors and circuits incorporating such conductors
JPS628943B2 (en)
JP2737762B2 (en) Method for manufacturing semiconductor device
JPS63202940A (en) Manufacture of semiconductor device
EP0168535B1 (en) A method of producing a layered structure
JPH065609A (en) Bump forming method
JPS61174757A (en) Capacitive element integrated on ic chip and manufacture thereof
JPS63114145A (en) Manufacture of semiconductor device
JPH07161723A (en) Method of forming metal pattern
JPH08139087A (en) Manufacture of semiconductor element
JPH04264733A (en) Formation of bump base film for integrated circuit device
JPS628030B2 (en)