JPS58176946A - Wafer holding device - Google Patents

Wafer holding device

Info

Publication number
JPS58176946A
JPS58176946A JP5903482A JP5903482A JPS58176946A JP S58176946 A JPS58176946 A JP S58176946A JP 5903482 A JP5903482 A JP 5903482A JP 5903482 A JP5903482 A JP 5903482A JP S58176946 A JPS58176946 A JP S58176946A
Authority
JP
Japan
Prior art keywords
wafer
supporting
outer periphery
supporting plate
rotor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5903482A
Other languages
Japanese (ja)
Inventor
Fumio Funase
船瀬　文雄
Hiroyuki Wada
弘之 和田
Yukiya Takezaki
竹崎　幸也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5903482A priority Critical patent/JPS58176946A/en
Publication of JPS58176946A publication Critical patent/JPS58176946A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers

Abstract

PURPOSE:To enable to surely hold a wafer so as to dope uniformly and thus enable to stably perform its detachment by a method wherein supporting plates having the same arc shape as the outer periphery of the wafer and extended into the outer periphery of the wafer are provided in a supporting part, and rotors of elastic bodies of hard rubber, etc. are provided in the part of supporting the side surface part. CONSTITUTION:A plurality of supporting parts 10 to support at the outer peripheral part of the wafer 1 are provided on a holding base 3. This supporting part 1C is equipped with the supporting plate 10a having the same arc shape as the outer periphery of the wafer 1. This supporting plate 10a has size to be extended into the outer periphery of the wafer 1 to the degree that the wafer 1 can be supported on the surface (e.g. extended from the outer periphery of the wafer 1 to approx. 0.5-1.0mm.). Further, the supporting part 10 is equipped with the rotor 10b to support the side surface part of the wafer 1. This rotor 10b is constituted of an elastic body of hard rubber, etc., and its outer diameter is smaller than that of the supporting plate 10a. Such a supporting part 10 is fixed by a fixing screw 10c on the holding base 3 concretely, and the rotor 10b is provided between the supporting plate 10a and the holding base 3, which has a gap 11 of a constant value to the extension part 10d of the fixing screw 10c and the supporting plate 10a.

Description

【発明の詳細な説明】 この発明は、イオン注入法等によシウニノ・の表面゛に
不純物領域を形成する際に用いるウェー保持装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wafer holding device used when forming an impurity region on the surface of a silicon wafer by ion implantation or the like.

ン等のウニへの１！＆面に不純物をドーグしてＰ型また
はＮ型の不純物領域を形成する必要がある。1 for the sea urchins! It is necessary to form a P-type or N-type impurity region by doping impurities on the & plane.

不純物をウェハの表面にドーグするには、従来から多く
の方法が用いられてお〉、中でも例えばイオン注入法は
不純物ドーｆｔ）深さ量の制御が容易等の利点があり多
用されている。Many methods have been used to dope impurities onto the surface of a wafer.Among them, ion implantation is widely used because of its advantages such as ease of controlling the depth of the impurity doping.

ところで、上記のようにイオン注入法等により不純物を
ドーグする場合、ドーグされる歩工・・を安定に保持す
る必要がある。従来では、第１図（４）（平面図）に示
すようにウニ／−１は複数の支持部２を有する保持台ｊ
Ｋよ）保持される。By the way, when doping impurities by ion implantation or the like as described above, it is necessary to stably hold the doped particles. Conventionally, as shown in FIG. 1 (4) (plan view), the sea urchin/-1 is mounted on a holding stand having a plurality of support parts 2.
K) will be retained.

そして、例えば水平に対して９０°１１度に傾斜した状
態で、ウェハ１の表面にイオン源（図示せず）から−口
ン等の不純物イオンが打込まれて注入される。この場合
、ウニ／％１は上記のように保持台Ｉの支持部２で支え
られている。この支持部２は、第１図ノ）（断面図）に
示すように逆円錐形状であシ、口径の小さい部分（通常
硬質がムからなる）Ｚａでウェハ１の側面部と接触して
支えることになる。Then, impurity ions such as ions are implanted into the surface of the wafer 1 from an ion source (not shown) while being inclined at 90 degrees and 11 degrees with respect to the horizontal, for example. In this case, the sea urchin/%1 is supported by the support part 2 of the holding table I as described above. This support part 2 has an inverted conical shape as shown in FIG. It turns out.

〔背景技術の問題点〕[Problems with background technology]

上記のような保持台Ｓで保持されたクエハ１に対してイ
オン注入をした場合、従来ウェハ１の表面の必要な部分
の中でイオン注入が行なわれない部分が生ずることがあ
る。これは、保持台３の支持部２がイオン注入方向から
見ると、円形状であ夛、ウェハ１０表面の一部をカバー
する状態となるためである。すなわち、第２図に示すよ
うに、支持部２でカバーされるウェハ１の表面部１ａに
は、イオン注入がなされないことになる。したがって、
このウェハ１の表面部１＆がイオン注入の必要な部分で
あれば、このウェハ１から不要となる半導体装置が製造
されることになる。さらに、上記のような保持台３１の
支持部２は通常固定されているため、ウェハ１を着脱す
る際ウェハ１の側面部が割れるなどの欠点もあった。し
たがって、従来のウェハ保持台３を用いて、イオン注入
等の製造処理を行なう場合、半導体装置のｌ造歩留を低
下させる欠点があった。When ion implantation is performed on the wafer 1 held on the holding table S as described above, there may occur a portion of the surface of the wafer 1 which is conventionally required but where ion implantation is not performed. This is because the support part 2 of the holding table 3 has a circular shape when viewed from the ion implantation direction, and covers a part of the surface of the wafer 10. That is, as shown in FIG. 2, ions are not implanted into the surface portion 1a of the wafer 1 covered by the support portion 2. therefore,
If the surface portion 1& of this wafer 1 is a portion that requires ion implantation, an unnecessary semiconductor device will be manufactured from this wafer 1. Further, since the support portion 2 of the holding table 31 as described above is usually fixed, there is also a drawback that the side surface of the wafer 1 may be cracked when the wafer 1 is attached or detached. Therefore, when manufacturing processes such as ion implantation are performed using the conventional wafer holding table 3, there is a drawback that the manufacturing yield of semiconductor devices is reduced.

〔発明の目的〕[Purpose of the invention]

この発明は上記の事情を鑑みてなされたもので、イオン
注入等によりウェハの表面に不純物をドーグする場合、
ドーグの必要な表面部に均一にドーグできるようにウェ
ハを確実に保持でき、しかもウェハの着脱を安定に行な
うことができるようにして、半導体装置の製造歩留を大
幅に向上できるウェハ保持装置を提供することを目的と
する。This invention was made in view of the above circumstances, and when doping impurities onto the surface of a wafer by ion implantation etc.
We have developed a wafer holding device that can reliably hold a wafer so that it can be applied uniformly to the required surface area of the wafer, and that can also stably attach and detach the wafer, thereby significantly improving the manufacturing yield of semiconductor devices. The purpose is to provide.

〔発明の概要〕[Summary of the invention]

すなわち、この発明においてはウェハを保持するための
支持部は、クエへの外周と同一の円弧形状を有しウェハ
を表面で支えられる範門内までウェハの外周内に延長し
た支持板を備えている。さらに、ウェハの側面部を支え
る部分は、硬質デ五郷の弾性体の回転子を具備している
ものである。That is, in this invention, the support section for holding the wafer includes a support plate that has the same arc shape as the outer circumference of the wafer and extends within the outer circumference of the wafer to the extent that the wafer can be supported on the surface. . Furthermore, the portion supporting the side surface of the wafer is provided with a rotor made of a hard elastic material.

〔発明の実施例〕[Embodiments of the invention]

以下図面を参照してこの発明の一実施例について説明す
る。第３ＦｉＡ（４）乃至帽）は、この発明に係るウェ
ハ保持装置の構成を示すもので、１は保持台で保持装置
の本体である。この保持台ＪＫは、ウェハ１の外周囲部
で支えるための複数の支持部１ｏが設けられる。この支
持部１ｏは、第３図囚に示すようにクエへ１の外周と同
一の円弧形状を有した支持板１ｏａを備えている。An embodiment of the present invention will be described below with reference to the drawings. 3rd FiA (4) to 4) show the structure of the wafer holding device according to the present invention, where 1 is a holding table and is the main body of the holding device. This holding stand JK is provided with a plurality of support parts 1o for supporting the outer periphery of the wafer 1. The support portion 1o is provided with a support plate 1oa having the same arc shape as the outer periphery of the square 1, as shown in FIG.

この支持板１ｏａは、ウェハ１を表面で支えられる程度
に、ウェハ１の外周内まで延長するような大きさく例え
ばウェハ１の外周から０．５〜１．０簡程度まで延長し
ている）である。さらに、支持部１０は第３図−）に示
すようにウェハ１の側面部を支えるための回転子１０ｂ
を備えている。この回転子１０ｂは、硬質ゴム等の弾性
体であり、その外径は支持板１ｏａよシ小さい。This support plate 1oa has a size such that it extends to the inside of the outer periphery of the wafer 1 to the extent that it can support the wafer 1 on its surface (for example, it extends about 0.5 to 1.0 cm from the outer periphery of the wafer 1). be. Furthermore, the support part 10 is provided with a rotor 10b for supporting the side surface of the wafer 1, as shown in FIG.
It is equipped with This rotor 10b is made of an elastic body such as hard rubber, and its outer diameter is smaller than that of the support plate 1oa.

このような支持部１ｏは、具体的には第３図（Ｃ１に示
すような構造である。すなわち、支持部１０本体は、保
持台３に固定用ネジ１０ｅで固定されている。また、回
転子１０ｂは支持板１０ｍと保持台３間に設けられ、固
定用ネジ１０ｃおよび支持板１ｏ１の延長＠　１０　ｄ
に対して一定のギャッｆｌｌを有している。Specifically, such a support part 1o has a structure as shown in FIG. The child 10b is provided between the support plate 10m and the holding table 3, and is an extension of the fixing screw 10c and the support plate 1o1 @ 10d
It has a constant gap fll.

このような構成の保持装置でウェハ１を保持して、イオ
ン注入等によシネ細物をドーグする。The wafer 1 is held by a holding device having such a structure, and a thin film is doped by ion implantation or the like.

この場合、イオン注入方向から見ると、第３図（４）に
示すようにウェハ１を支えている支持部１０は、ウェハ
１の外周と同一の円弧形状を有する支持板１０ａでわず
かにカバーしているだけである。したがって、ウェハＩ
Ｋ対してイオン注入が行なわれた場合、第４図に示すよ
うにウェハ１の表面でイオン注入がなされない表面部１
ｂは極めて少ないことＫなる。そのため、ウェハ１の周
辺部でイオン注入が必要な部分がある場合でも、全て均
一に不純物をドーグすることができる。さらに、ウニノ
・１の側面部を支える保持装置の部分は、硬質ｆ五等の
弾性体の回転子１０ｂからなる九め、ウニ１１を着脱す
る場合ウェハの側面部付近に加わる衝撃を緩和し、割れ
の発生などの不都合を確実に防止できる。すなわち、回
転子１０ｂが軸（固定用ネジ１０ｏおよび支持板１０＊
Ｏ延長部１０１１からなる）に対して一定のギヤラグを
有して、ウェハ１の着脱時に回転するために、着脱の際
のつエバ１に対する衝撃を緩和し、しかも着脱を容易に
することができる。In this case, when viewed from the ion implantation direction, the support portion 10 supporting the wafer 1 is slightly covered by the support plate 10a having the same arc shape as the outer periphery of the wafer 1, as shown in FIG. 3(4). It's just that. Therefore, wafer I
When ion implantation is performed for K, as shown in FIG.
b is extremely small. Therefore, even if there is a portion in the periphery of the wafer 1 that requires ion implantation, impurities can be uniformly implanted all over the wafer 1. Furthermore, the part of the holding device that supports the side surface of the wafer 1 is made of a rotor 10b made of an elastic material such as hard F5, which cushions the impact applied to the vicinity of the side surface of the wafer when the sea urchin 11 is attached or removed. Inconveniences such as cracking can be reliably prevented. That is, the rotor 10b is the shaft (fixing screw 10o and support plate 10*
Since the wafer 1 has a constant gear lug with respect to the wafer 1 (consisting of the O extension part 1011) and rotates when the wafer 1 is attached or detached, the impact on the wafer 1 during attachment or detachment can be alleviated, and the attachment or detachment can be made easier. .

〔発明の効果〕〔Effect of the invention〕

以上詳述したようにこの発明によれば、イオン注入等に
よりウェハの表面に不純物をドーグする場合、ドーグの
必要な表面部に均一に不純物をドー！できるように確実
にウェハを保持できる。しかもウェハの着脱の際、ウェ
ハに対する衝撃を緩和できるため、ウェハの側面部付近
に割れが生ずるなどの悪影響を確実に防止できる。した
がって、半導体装置の製造において、不良品の発生を大
幅に減少して、製造歩留を大幅に向上できるものである
。As detailed above, according to the present invention, when impurities are doped onto the surface of a wafer by ion implantation, etc., the impurities are uniformly doped onto the necessary surface portions of the dow! The wafer can be held securely. Furthermore, since the impact on the wafer can be alleviated when the wafer is attached or detached, adverse effects such as cracks occurring near the side surfaces of the wafer can be reliably prevented. Therefore, in the manufacture of semiconductor devices, the occurrence of defective products can be significantly reduced and the manufacturing yield can be significantly improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図（４）、（Ｂ）は従来のウェハ保持装置の構成を
示す図、第２図はイオン注入後のウェハの状態を説明す
る図、第３図囚乃至（Ｃ）はこの発明の一実施例に係る
ウェハ保持装置の構成を示す図、第４図はそのウェハ保
持装置でイオン注入した場合のウェハの状態を説明する
図である。 １・・・ウェハ、２・・・支持部、３・・・保持台、１
０・°°支持部、１０ｍ・・・支持板、１０ｂ・・・回
転子。 出願人代理人　弁理士　鈴　江　武　彦第１図 （Ａ）　　　　　　　ＣＢ） 第２図 第３図 （Ａ）ＣＢ） （Ｃ） 第４図FIGS. 1(4) and (B) are diagrams showing the configuration of a conventional wafer holding device, FIG. 2 is a diagram explaining the state of a wafer after ion implantation, and FIGS. FIG. 4 is a diagram showing the configuration of a wafer holding device according to an embodiment, and is a diagram explaining the state of a wafer when ions are implanted with the wafer holding device. DESCRIPTION OF SYMBOLS 1... Wafer, 2... Support part, 3... Holding stand, 1
0.°° Support part, 10m...Support plate, 10b...Rotor. Applicant's representative Patent attorney Takehiko Suzue Figure 1 (A) CB) Figure 2 Figure 3 (A) CB) (C) Figure 4

Claims (1)

【特許請求の範囲】[Claims] ウェハの表面に不純物領域を形成する際、ウェハを保持
する装置において、ウェハの外周と同一０円弧形状を有
しウェハを表面で支えられる範囲内でウェハの外周囲内
まで延長された支持板および上記ウェハの側面部を支え
る弾性体の回転子とからなる支持部を臭備したことを特
徴とするウェハ保持装置。When forming an impurity region on the surface of the wafer, in the device that holds the wafer, a support plate that has the same arc shape as the outer circumference of the wafer and extends to the outer circumference of the wafer within a range that can support the wafer on the surface; A wafer holding device characterized by comprising a support portion comprising a rotor made of an elastic body that supports a side surface of the wafer.
JP5903482A 1982-04-09 1982-04-09 Wafer holding device Pending JPS58176946A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5903482A JPS58176946A (en) 1982-04-09 1982-04-09 Wafer holding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5903482A JPS58176946A (en) 1982-04-09 1982-04-09 Wafer holding device

Publications (1)

Publication Number Publication Date
JPS58176946A true JPS58176946A (en) 1983-10-17

Family

ID=13101598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5903482A Pending JPS58176946A (en) 1982-04-09 1982-04-09 Wafer holding device

Country Status (1)

Country Link
JP (1) JPS58176946A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103386566A (en) * 2013-07-10 2013-11-13 中国电子科技集团公司第四十一研究所 Laser processing clamp of medium substrate and application method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103386566A (en) * 2013-07-10 2013-11-13 中国电子科技集团公司第四十一研究所 Laser processing clamp of medium substrate and application method thereof
CN103386566B (en) * 2013-07-10 2015-04-01 中国电子科技集团公司第四十一研究所 Laser processing clamp of medium substrate and application method thereof

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