JPS58176937A - Fine pattern - Google Patents

Abstract

PURPOSE:To prevent the fall of a fine pattern by a method wherein supporting patterns which are constituted of the same pattern material layers and not related to the original functions of pattern are projection-formed on the side surfaces including the end parts of the main pattern having the original functions of the pattern. CONSTITUTION:The supporting patterns 2 which have conduction function original to wiring and are projection-formed in a branch form on the both side surfaces of the main pattern 1 of a wiring having a long straight line part and thus have the function of supporting the main pattern 1 not to fall are arranged. The supporting patterns 2 are formed to lengths l1'-l3' and widths W1'-W3' not to influence the adjacent patterns at desired intervals d1-d3 not to influence the adjacent wiring patterns, and formed of the wiring material layers equal to the main pattern 1, therefore heights h thereof are made equal to each other.

Description

[Detailed description of the invention] (Jl) Technical field of the invention The invention relates to the structure of a fine pattern, and the fine pattern has a wall shape that is narrower in width than that of a crow, and has a long fIL plume. Regarding the structure of

(b) Background of the technology In recent years, it has become possible to form fine patterns using electron beam cliff light technology, It is the first advantage in forming highly integrated field ICs, and efforts are being made in various fields. (C) Prior art and melting point Conventional fine patterns are generally original! It had an Ik function and was formed only from 9 parts ◎That is, for example, the wiring pattern -
The desired machine III! It has the function of electrically connecting regions and is formed of only 9 parts, and in the resist pattern, the mask m11! It is formed only by the part that has .

However, in wiring patterns made of polycrystalline silicon, which has a relatively high resistivity, the resistance is 0.
In the case of a fine pattern of about 1 [μm], the height of + should be set to about 1 [μm] to avoid increasing the wiring resistance.
: It is necessary for IC to generate 4N, and also for such fine arrangement.
Selective etching when forming the substrate is usually performed using a dry etching method such as reactive ion etching.

The resist pattern used as an etching fist mask must also be at least 1 (JIm) @ 4%-J of It. Compared to the high HL K, the smooth WJ is visually narrow.

Moreover, in the conventional structure of fine butter 7 to 1, which is formed only by the original machine 11 part, especially when the length of the straight part becomes long, the skeleton fine pattern may not collapse due to a slight external force applied during the manufacturing process. The purpose of the present invention is to provide a thin pattern with a structure that prevents collapse, and to reduce the manufacturing yield of VLSI etc. (e) The structure of the 4i light, that is, the misfire, is the same as the 1 body putter on 11 planes, which has the original function of the pattern in the fine pattern and includes the edge of the 9 body pattern. 0(f) consisting of a butter I# family layer, characterized in that the original 41I simply unrelated supporting putter/ is made of a protruding shape iM, '6. Then, I will use the detailed evaluation kit.
! -0112- is a perspective view of the main part of an embodiment of the wiring pattern of a conductor IC, etc., and the third part is a 1! of an embodiment of the gate electrode of MO8IC. A top view (a) and a cross-sectional view taken along the line A-A'<cI). (Mo8i), fine wiring pattern of polycrystalline silicon, etc. For example, s, 211! As shown in clK, the wiring has the original power-carrying function, and the turf 1 is protruded in the direction of both trouts in the turn, and the turf 1 is not tipped over. In addition, in the same case, 3 is an insulating film such as silicon dioxide (SIO)-phosphosilicate glass (PSG). Then, when the non-stop pattern 10 width W is 0.1 (μm) II! and the belly height h is about 1 [μm], the support pattern 2 is, for example, 5 to 10 (μm) high. Set a desired interval 'l* dme dm that does not affect turns, etc., and set a long field 1' that does not affect the pattern Km.

it@', Itm' and fluentWs'1%'@
0 followers formed in Ws', te d,, due ct,
, j/ Am', J! m's Ws' eWs
If ', Wa' are equal, then support pattern 2 and main body/lean 1! '! At the same time, since they are formed from the same wiring material layer, their island heights h are equal. This figure shows the top surface and A-A' astronomical cross-section of the main parts of a MOS IC. Two transistors in the w range @WT! , for example, is formed to an extreme of 6-10 (μff1) and is covered with an insulating layer 3 such as a field oxide film.
IIl area Iso convergence WHgl house e.g. 2~3 (11m
) formed in sll 9 Therefore, when providing a common gate voltage @G for multiple transistors as shown in the figure, its length λ
G%! Extremely yellow (O and the gate amount of these transistors, that is, goo) $ik width WQ is 0.1 (μm) I
In lt.

Moreover, when the gate electrode G is formed of polycrystalline silicon or the like having a relatively low resistance, the height hG4tl [
μm) 1m degree, and the gate voltage 4G is smooth w
G becomes a wall-like pattern which is noticeably narrower than the height hG and also has a length AQ.

In such a case, it is possible to place 6 to 10 (a+m) on both 11 sides of *G on the gate, that is, to place the WI of 2 minutes #1 area Iso so that it is located on the 1st area XSO.
The source distribution k L with −W′ narrower than so and &I
s, A support pattern 2 having a length ζL' that can maintain a predetermined distance from the drain wiring LD, etc. is formed to prevent the gate electrode G from falling. The support pattern 2' at the end also serves as a wiring pad area.

Formed into a wide width W Also, the gate electrode G and the support patterns 2 and 2'.

◎ In the above embodiments, the non-invention was explained as a pattern made into a semiconductor IC, etc., but the present invention does not apply to any other than the above. In addition, it is also applied to the resist pattern used as an etching mask when forming a fine pattern with a diameter of 1 (μm) to prevent it from collapsing. Although the support pattern is provided in the main pattern, the if support pattern may be provided in the 10,000 g4 strokes of the main pattern.

(gl More than the effects of the inventionwiL) As can be clearly seen, according to the present invention, collapse of a wall-like fine pattern whose width is significantly narrower than that of the VL8I can be prevented. This is effective in improving yield when manufacturing semiconductor ICs and the like.

[Brief explanation of the drawing]

ii 1! Figure 1 is a perspective view of a conventional fine pattern - 1 Figure 2 is a perspective view of a main part in one embodiment of the present invention, and Figure 3 is a top surface of IIN Zheng in another embodiment of the present invention Figure) and A-
A' arrow-view cross section 1ii2←). -, 1 is a main body pattern, 2e 2' is a support pattern, 3 is an insulating layer, and W is a ring of the main body pattern. dIs a,, ds are support pattern intervals, W/, Wl/
. We ' y Wa ' @ V/I is a support pattern 11p, Bit. 1%, 1.1 is the length of the support pattern, S is the source area,
D is the drain region, G is the gate electrode, and ZIO is the
1, wG is the width of the isolation region, hG is the height of the gate electrode, BG is the length of the gate electrode, LD is the drain wiring, and Ls is the source wiring.

Claims (1)

[Claims] 111 with endless patterns! It is defined as mold that a supporting pattern, which is made of the same pattern material layer as the main pattern and is unrelated to the original function of the pattern, is formed protrudingly on the surface of II including the ends of the main pattern. Fine pattern