JPS58176195A - 浮遊帯域溶融法による結晶製造方法 - Google Patents

浮遊帯域溶融法による結晶製造方法

Info

Publication number
JPS58176195A
JPS58176195A JP57057028A JP5702882A JPS58176195A JP S58176195 A JPS58176195 A JP S58176195A JP 57057028 A JP57057028 A JP 57057028A JP 5702882 A JP5702882 A JP 5702882A JP S58176195 A JPS58176195 A JP S58176195A
Authority
JP
Japan
Prior art keywords
crystal rod
concentrator
crystal
induction heating
melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57057028A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6362480B2 (enExample
Inventor
Nobuhide Mitsumizo
三溝　宣秀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin-Etsu Handotai Co Ltd
Original Assignee
Shin-Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Handotai Co Ltd filed Critical Shin-Etsu Handotai Co Ltd
Priority to JP57057028A priority Critical patent/JPS58176195A/ja
Publication of JPS58176195A publication Critical patent/JPS58176195A/ja
Publication of JPS6362480B2 publication Critical patent/JPS6362480B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Induction Heating (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP57057028A 1982-04-06 1982-04-06 浮遊帯域溶融法による結晶製造方法 Granted JPS58176195A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57057028A JPS58176195A (ja) 1982-04-06 1982-04-06 浮遊帯域溶融法による結晶製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57057028A JPS58176195A (ja) 1982-04-06 1982-04-06 浮遊帯域溶融法による結晶製造方法

Publications (2)

Publication Number Publication Date
JPS58176195A true JPS58176195A (ja) 1983-10-15
JPS6362480B2 JPS6362480B2 (enExample) 1988-12-02

Family

ID=13043973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57057028A Granted JPS58176195A (ja) 1982-04-06 1982-04-06 浮遊帯域溶融法による結晶製造方法

Country Status (1)

Country Link
JP (1) JPS58176195A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006169060A (ja) * 2004-12-17 2006-06-29 Shin Etsu Handotai Co Ltd 単結晶製造装置及び単結晶製造方法
JP2012126593A (ja) * 2010-12-14 2012-07-05 Shin Etsu Handotai Co Ltd 半導体単結晶製造装置及び半導体単結晶の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006169060A (ja) * 2004-12-17 2006-06-29 Shin Etsu Handotai Co Ltd 単結晶製造装置及び単結晶製造方法
JP2012126593A (ja) * 2010-12-14 2012-07-05 Shin Etsu Handotai Co Ltd 半導体単結晶製造装置及び半導体単結晶の製造方法

Also Published As

Publication number Publication date
JPS6362480B2 (enExample) 1988-12-02

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