JPS58175294A - Thin film light emitting element - Google Patents
Thin film light emitting elementInfo
- Publication number
- JPS58175294A JPS58175294A JP57057502A JP5750282A JPS58175294A JP S58175294 A JPS58175294 A JP S58175294A JP 57057502 A JP57057502 A JP 57057502A JP 5750282 A JP5750282 A JP 5750282A JP S58175294 A JPS58175294 A JP S58175294A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- light emitting
- sialon
- emitting element
- film light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 33
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 235000019557 luminance Nutrition 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- BHHYHSUAOQUXJK-UHFFFAOYSA-L zinc fluoride Chemical compound F[Zn]F BHHYHSUAOQUXJK-UHFFFAOYSA-L 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002362 mulch Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は電場発光をする薄膜発光素子（以下薄膜ＫＬ素
子という）に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film light emitting device (hereinafter referred to as a thin film KL device) that emits electroluminescence.
交流電界の印加により発光する薄膜ＫＬ素子では、螢光
体薄膜層の片面または両面に誘電体薄膜層を設け、これ
を二つの電極層ではさむ構造で、高輝度が得られている
。誘電体薄膜層が一層の素子は、構造が簡単で駆動電圧
が低いという特徴をもっている。誘電体薄膜層が二層の
素子には、絶縁破壊を起こしにくく、輝度が特に高いと
いう特徴がある。ここに用いる螢光体材料としては、活
性物質を添加したＺｎＳ 、 Ｚｎ５ｅ 、 ＺｎＦ２
等が知られている１、特にＺｎＳ ｆ：母体とし、Ｍｎ
を発光中心として添加した素子では、最高３５００
〜５０００ｃａ ／ ｍ２の輝度が達成されている。こ
こに用いる誘電体材料としては、Ｙ２Ｏ５、ＳｉＯ、ム
１２０５ 。A thin film KL element that emits light by applying an alternating current electric field has a structure in which a dielectric thin film layer is provided on one or both sides of a phosphor thin film layer, and this is sandwiched between two electrode layers to obtain high brightness. An element having a single dielectric thin film layer has a simple structure and a low driving voltage. A device with two dielectric thin film layers has the characteristics of being less likely to cause dielectric breakdown and having particularly high brightness. The phosphor materials used here include ZnS, Zn5e, ZnF2 doped with active substances.
etc.1, especially ZnS f: matrix, Mn
In a device doped with
Luminances of ~5000 ca/m2 have been achieved. The dielectric materials used here include Y2O5, SiO, and Mu1205.
Ｔａ ２０５等の酸化物が代表的なものである。これら
の酸化物を電子ビーム蒸着法で作製すると、酸素欠陥を
生じやすいので、絶縁破壊しやすく、素子が不安定とな
る。また、スペッタリングにより作製する場合、通常、
酸素欠陥が生じないように、スパッタリングガス中に酸
素を多聞：に混入させるため、高濃度の酸素プラズマが
発生する。そのためＺｎＳ等の螢光体層の表面に損傷を
与えて、螢光体層と誘電体層が剥離しやすかった３、さ
らには、ＩＴＯや８ｎＯ２といった透明電極に作用し、
その電気伝導度を下げてしまうといった欠点があった。Oxides such as Ta 205 are typical. When these oxides are manufactured by electron beam evaporation, oxygen defects are likely to occur, resulting in dielectric breakdown and the device becoming unstable. In addition, when fabricating by sputtering, usually
In order to prevent oxygen defects from occurring, a high concentration of oxygen plasma is generated because a large amount of oxygen is mixed into the sputtering gas. As a result, it damages the surface of the phosphor layer such as ZnS, making it easy for the phosphor layer and dielectric layer to separate3.Furthermore, it acts on transparent electrodes such as ITO and 8nO2,
It has the disadvantage of lowering its electrical conductivity.
−ノｊ、誘電体層に５ｉ５Ｎ＋に代表される窒化物を用
いたＫＬ素子が提案されている。Ｓｉ ５Ｎ ４の場合
もスパッタリングにより膜が形成されているが、酸化物
の場合と異なり、高濃度の酸素プラズマの影響がないの
で、ＺｎＳとＳｉ３Ｎ４との剥離や透明電極の電気伝導
度の低下がなく、かつ絶縁耐圧も高く、好ましい結果が
得られることが報告されている。A KL element using a nitride typified by 5i5N+ for the dielectric layer has been proposed. In the case of Si5N4, a film is also formed by sputtering, but unlike in the case of oxides, there is no effect of high concentration oxygen plasma, so there is no possibility of separation between ZnS and Si3N4 or a decrease in the electrical conductivity of the transparent electrode. It has been reported that favorable results can be obtained because the dielectric strength is high and the dielectric strength is high.
しかしながら、５ｉ４Ｎ３の場合にはＩＴＯ等の透明電
極やム１ 等の背面電極との密着力が悪く、これらの電
極との間で剥離しやすいという欠点があった。However, in the case of 5i4N3, it has a drawback that it has poor adhesion with transparent electrodes such as ITO and back electrodes such as Mu1, and is likely to peel off between these electrodes.
この理由はまだ明確にはされていないが、５ｉ４Ｎｓと
電極層との界面での相互拡散がおこなわれにくいためと
考えられる。。Although the reason for this is not yet clear, it is thought that it is because mutual diffusion at the interface between 5i4Ns and the electrode layer is difficult to occur. .
本発明は以上の点を鑑みてなされたものであって、ｇ電
体層Ｋ ５ｉｓＮ４− Ａｌｌ −Ａ１２０３− Ｓｉ
Ｏ２力らなる系の化合物（以下「サイアロン」と称す）
を用いることにより、薄膜層間での剥離がなく、かつ絶
縁耐圧が高い安定なＫＬ素子を実現することができたも
のである。The present invention has been made in view of the above points, and includes a g-electric layer K5isN4-All-A1203-Si
A compound based on O2 force (hereinafter referred to as "Sialon")
By using this method, it was possible to realize a stable KL element with no peeling between thin film layers and a high dielectric strength voltage.
サイアロンは、高温でも安定で機械的強度が高い材料で
あって、耐熱材料として盛んに研究が進められている。Sialon is a material that is stable even at high temperatures and has high mechanical strength, and is being actively researched as a heat-resistant material.
これはＳｉ、ｓＮ＜ −Ａｌ１−Ａｌ２Ｏ５−８ｉＯ２
： カＣ，ｆｚる系ノ化会物テｓｉ、ム１．Ｎ、０（７
）４元素で構成される。この系においてはＸ、Ｑ。This is Si, sN< -Al1-Al2O5-8iO2
: KaC, fzru type monster tesi, mu1. N, 0(7
) Composed of 4 elements. In this system, X, Q.
β、１５Ｒ，２Ｈ等多くの化合物相が存在する。There are many compound phases such as β, 15R, and 2H.
代表的な相はβ相で、β−８ｉ ５Ｎ ４において、ｓ
ｉ。The typical phase is β phase, and in β-8i 5N 4, s
i.
Ｎの一部をそれぞれム１．ｏで置換した材料である。Each part of N is 1. This is a material substituted with o.
サイアロンの薄膜は、この糸が高融点物質で構成されて
いるために、Ｘ線的には非晶質となる。The thin film of Sialon is amorphous when viewed by X-rays because the threads are composed of a high-melting point substance.
この薄膜は、耐熱性が高いので、螢光体層の安定化に必
要な熱処理に全く影響を受けない。またＡ１と０を成分
として含んでいるため、ＫＬ素子の代表的背面電極であ
るムｌ膜との密着力が十分に大きい。This thin film is highly heat resistant and is therefore completely unaffected by the heat treatments required to stabilize the phosphor layer. In addition, since it contains A1 and 0 as components, it has a sufficiently strong adhesion to the mulch film, which is a typical back electrode of a KL element.
サイアロンｌ１ｉｌハＲＦスパツタリング法により作製
できる。ターゲットには、サイアロンそのもノヲ用イテ
モヨイシ、ム１２ｏ５ト５ｉ５Ｎ４ヤ５１ｏ２トムＩＮ
の粉末を混合したものを用いてもよい。スパッタリング
ガスはムｒ単独がムｒとＮ２の混合ガスでよい。この場
合、０２ を導入しないので、高濃度の酸素プラズマ
が発生しない。したがって、第１に、螢光体層を損傷し
ないので、螢光＃、層とサイアロン薄膜間で剥離が起こ
らない。第２に、ＩＴＯ等の透明電極を損傷しないので
、透明電極の電導度が下らない。また、サイアロン薄膜
は陰イオン欠陥ができにくいので絶縁耐圧が高く、５Ｍ
Ｖ／ｃｍ以上のものが容易に得られる。Sialon l1il can be produced by RF sputtering method. Targets include Sialon itself, Itemo Yoishi, Mu12o5to5i5N4 and 51o2 Tom IN.
A mixture of powders may also be used. The sputtering gas may be a mixed gas of Mr and N2 instead of Mr alone. In this case, since O2 is not introduced, high concentration oxygen plasma is not generated. Therefore, firstly, since the phosphor layer is not damaged, no peeling occurs between the phosphor layer and the sialon thin film. Second, since it does not damage the transparent electrode such as ITO, the conductivity of the transparent electrode does not decrease. In addition, the SiAlON thin film has a high dielectric strength voltage because it is difficult to form anion defects, and has a 5M
V/cm or more can be easily obtained.
次に本発明素子の一実施例について述べる。Next, one embodiment of the device of the present invention will be described.
図に示すように、ガラス基板１上にＩＴＯ薄膜からなる
透明電極２をＲＦスパッタリング法により厚さ１５０ｎ
ｌｌに形成した。この透明電極２の抵抗は２ｏΩ／口で
あった。Ｓｉ ｓＮ ４粉末とム１２ｏ５粉末を重量比
で６：４の割合で混合した粉末をターゲットにして、Ｒ
Ｆスパッタリング法により、サイアロン薄膜３を透明電
＠２上に厚さ２００１ｍ形成した。スパッタリングガス
は、Ａｒ カ２．５ Ｐａ 。As shown in the figure, a transparent electrode 2 made of an ITO thin film is formed on a glass substrate 1 to a thickness of 150 nm by RF sputtering.
It was formed into ll. The resistance of this transparent electrode 2 was 20Ω/hole. R
A Sialon thin film 3 was formed to a thickness of 2001 m on the transparent electrode@2 by the F sputtering method. The sputtering gas was Ar at 2.5 Pa.
Ｎ２がＯ，ｅｓ Ｐａ である。サイアロン膜形成後も
透明電極２の抵抗に変化は認められなかった。さらにＺ
ｎＳ ： Ｍｎ 薄膜４を電子ビーム蒸着法により形成
した。膜厚は５００１ｍである。ついで、サイアロン薄
膜５をサイアロン薄膜３と同じ手法で厚さ２００１ｍ形
成した。ＺｎＳ ： Ｍｎ 薄膜４とサイアロン薄膜３
．６間Ω剥離は全く見られなかった。N2 is O, es Pa. No change in the resistance of the transparent electrode 2 was observed even after the formation of the sialon film. Further Z
nS:Mn thin film 4 was formed by electron beam evaporation. The film thickness is 5001 m. Next, a sialon thin film 5 was formed to a thickness of 2001 m using the same method as the sialon thin film 3. ZnS: Mn thin film 4 and Sialon thin film 3
．． No 6-ohm peeling was observed.
最後に背面電極としてム１薄膜６を厚さ１５０ｎｍ蒸着
法により形成し、素子を完成した。Ａ１ 薄膜６とサイ
アロン薄膜５との間の剥離も全くなく、両者間の密着は
良好であった。Finally, a Mu1 thin film 6 was formed as a back electrode to a thickness of 150 nm by vapor deposition to complete the device. A1 There was no peeling between the thin film 6 and the Sialon thin film 5, and the adhesion between them was good.
こうして作製されたＫＬ素子は、５ ＫＨｚの正弦波交
流電圧１８０Ｖｒｍｇで駆動して約３０ｏｏＣ←の輝度
を得た。長時間駆動しても膜間での剥離等は全くみられ
なかった。The thus manufactured KL element was driven with a 5 KHz sine wave AC voltage of 180 Vrmg to obtain a luminance of about 30 ooC←. Even after long-term driving, no peeling between the films was observed.
以上述べたように、本発明の薄膜発光素子は、サイアロ
ン薄膜を誘電体層として用いることにより、薄膜間での
剥離がなく、安定なものである。As described above, the thin film light emitting device of the present invention is stable because there is no peeling between the thin films by using the SIALON thin film as the dielectric layer.
図は本発明にかかる薄膜発光素子の一実施例の断面図で
ある。
１・・・・・・ガラス基板、２・・・・・・透明電極、
３，６・・・・・・Ｓｉボ４−ムＩＮ−ム１２０ｓ −
ＳｉＯ２系化合物薄膜、４・・・・・・Ｚｎ８ ： Ｍ
ｎ薄膜、６・・・・・・ム１電極。The figure is a sectional view of one embodiment of a thin film light emitting device according to the present invention. 1...Glass substrate, 2...Transparent electrode,
3,6...Si box 4-mu IN-mu 120s-
SiO2-based compound thin film, 4...Zn8: M
n thin film, 6...mu 1 electrode.
Claims (1)
れた誘電体薄膜層と、少なくとも一方が光透過性である
二つの電極層とを有し、前記誘電体薄膜層がＳｉ、３Ｎ
ａ−ムＩＮ−ムｌｚ’３−５ｉＯ２系の化合物で形成さ
れていることを特徴とする薄膜発光素子。It has a phosphor thin film layer, a dielectric thin film layer disposed on at least one main surface side of the phosphor thin film layer, and two electrode layers, at least one of which is transparent.
A thin film light emitting device characterized in that it is formed of a compound of the a-muIN-mulz'3-5iO2 type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57057502A JPS58175294A (en) | 1982-04-06 | 1982-04-06 | Thin film light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57057502A JPS58175294A (en) | 1982-04-06 | 1982-04-06 | Thin film light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58175294A true JPS58175294A (en) | 1983-10-14 |
| JPS6319076B2 JPS6319076B2 (en) | 1988-04-21 |
Family
ID=13057494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57057502A Granted JPS58175294A (en) | 1982-04-06 | 1982-04-06 | Thin film light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58175294A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS622496A (en) * | 1985-06-26 | 1987-01-08 | ホ−ヤ株式会社 | Thin film el element |
| JPH04237994A (en) * | 1991-01-18 | 1992-08-26 | Kenwood Corp | Structure of thin film el element |
-
1982
- 1982-04-06 JP JP57057502A patent/JPS58175294A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS622496A (en) * | 1985-06-26 | 1987-01-08 | ホ−ヤ株式会社 | Thin film el element |
| JPH04237994A (en) * | 1991-01-18 | 1992-08-26 | Kenwood Corp | Structure of thin film el element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6319076B2 (en) | 1988-04-21 |
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