JPS58168281A - ホウ素を含有したシリコン薄膜 - Google Patents

ホウ素を含有したシリコン薄膜

Info

Publication number
JPS58168281A
JPS58168281A JP57051970A JP5197082A JPS58168281A JP S58168281 A JPS58168281 A JP S58168281A JP 57051970 A JP57051970 A JP 57051970A JP 5197082 A JP5197082 A JP 5197082A JP S58168281 A JPS58168281 A JP S58168281A
Authority
JP
Japan
Prior art keywords
thin film
film
containing boron
silicon thin
discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57051970A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0370389B2 (enExample
Inventor
Yutaka Hayashi
山中光之
Mitsuyuki Yamanaka
藤野藤次
Mitsuo Umemura
梅村光雄
Fujitsugu Fujino
林豊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57051970A priority Critical patent/JPS58168281A/ja
Publication of JPS58168281A publication Critical patent/JPS58168281A/ja
Publication of JPH0370389B2 publication Critical patent/JPH0370389B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photoreceptors In Electrophotography (AREA)
  • Photovoltaic Devices (AREA)
JP57051970A 1982-03-30 1982-03-30 ホウ素を含有したシリコン薄膜 Granted JPS58168281A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57051970A JPS58168281A (ja) 1982-03-30 1982-03-30 ホウ素を含有したシリコン薄膜

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57051970A JPS58168281A (ja) 1982-03-30 1982-03-30 ホウ素を含有したシリコン薄膜

Publications (2)

Publication Number Publication Date
JPS58168281A true JPS58168281A (ja) 1983-10-04
JPH0370389B2 JPH0370389B2 (enExample) 1991-11-07

Family

ID=12901723

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57051970A Granted JPS58168281A (ja) 1982-03-30 1982-03-30 ホウ素を含有したシリコン薄膜

Country Status (1)

Country Link
JP (1) JPS58168281A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6193675A (ja) * 1984-10-12 1986-05-12 Sanyo Electric Co Ltd 光起電力装置の製造方法
US4957773A (en) * 1989-02-13 1990-09-18 Syracuse University Deposition of boron-containing films from decaborane

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122122A (en) * 1980-03-03 1981-09-25 Fuji Photo Film Co Ltd Manufacture of amorphous semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122122A (en) * 1980-03-03 1981-09-25 Fuji Photo Film Co Ltd Manufacture of amorphous semiconductor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6193675A (ja) * 1984-10-12 1986-05-12 Sanyo Electric Co Ltd 光起電力装置の製造方法
US4957773A (en) * 1989-02-13 1990-09-18 Syracuse University Deposition of boron-containing films from decaborane

Also Published As

Publication number Publication date
JPH0370389B2 (enExample) 1991-11-07

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