JPS58167768A - Apparatus for preparing thin film by ion beam sputtering - Google Patents

Abstract

PURPOSE:To provide the titled apparatus increased in productivity, constituted in such a mechanism wherein plural substrates are arranged on the circumference of a circle and ion beam is irradiated while said substrates are relatively rotated around a target to form a sputter thin films on the plural substrates at once. CONSTITUTION:The interior of an outer wall 11 is evacuated from a connecting part 9 to an exhaust system to form an optimum sputtering space while ion beam generated from an ion beam generating gun 1 is irradiated onto the surface of a target 2 in a direction shown by an arrow 6 to carry out sputtering with respect to the surface of the substrate 4 in a direction shown by an arrow 7 from the surface of the target. The target 2 is rotated along the attaching shaft 3 thereof as shown by an arrow 3'. Plural substrates 4 are held on substrate holders 5 arranged on the circumference of a circle. By constituting the above mentioned target 2 and the substrate holders 5 so as to relatively rotate the same or constituting the same in a relatively reversely rotatable or an upwardly and downwardly movable manner, the enhancement in efficiency of a sputter thin film formation or the increase of an application range can be attained.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film manufacturing apparatus using ion beam sputtering, and more particularly to the thin film manufacturing apparatus with high productivity, which can form sputtered thin films on a large number of substrates at once.

Generally, thin film manufacturing equipment that forms a sputtered thin film on a substrate by ion beam sputtering creates an optimal sputtering space by evacuating the inside of the equipment, and generates an ion beam to irradiate the target. As a result, a sputtered thin film is formed on the substrate holder [the substrate held by -] by sputtering from the target. The process for forming a thin film on the substrate consists of the following: That is, the process of loading and unloading the substrate into the device, the second step of exhausting the inside of the device,
Perform sputtering using an ion beam to create a substrate! - a step of forming a sputtered thin film on the substrate, and a step of leaving the substrate after sputtering. However, when forming thin films on a large number of substrates in conventional devices of this kind, the substrates are loaded one by one into the device, the substrates are taken in and out one by one, the device is evacuated, and the substrates after sputtering are removed. It has become common for people to repeatedly leave things unattended. In other words, is there an atmosphere inside the device when inserting or removing substrates? Therefore, exhaustion is required. Therefore, the conventional apparatus has the disadvantage of being extremely inefficient and unsuitable for mass production.

The present invention was made in view of the actual situation of conventional apparatuses, and its purpose is to provide an efficient thin film manufacturing apparatus suitable for mass production that can form sputtered thin films on a large number of substrates at once. It is on offer.

In other words, whereas the conventional apparatus repeatedly evacuates the apparatus one by one to form a sputtered thin film on a substrate, the apparatus of the present invention forms a sputtered thin film on a large number of substrates through a single evacuation process. In this method, a plurality of substrates are arranged approximately on the circumference around the target, which is the target of the ion beam, and means for holding the targets and substrates (
(substrate boulder) rotates relative to the
The ion beam from the ion beam generation gun side is irradiated onto the target surface, and as the target or substrate holder rotates, sputtered thin films are formed on a large number of substrates on the substrate holder by sputtering from the target surface. .

Hereinafter, a thin film manufacturing apparatus using ion beam sputtering according to the present invention will be explained based on the drawings. FIG. 1 is a front cross-sectional view of a thin film manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 is a plan cross-sectional view of the thin film manufacturing apparatus of FIG. It is a diagram. In these figures, 1
2 is an ion beam generating gun; 2 is a target; 3 is a rotatably mounted target mounting shaft with the target 2 tilted; 3' is an arrow indicating the rotation direction of the target mounting shaft 3; 4 is a substrate; is a substrate holder that holds a plurality of substrates 4 on a circumference centered on the target surface; 6 is an arrow indicating the direction of incidence of the ion beam from the ion beam generation gun 1 to the surface of the target 2; and 6' is the direction of the ion beam. , 7 is an arrow indicating the direction of sputtering from the surface of the target 2, and 7' is the cross-sectional shape of the subaper 1. 8 is a sputtering space, 9 is a connection to an exhaust device (not shown), and 11 is an outer wall forming the sputtering space 8. In the thin film manufacturing apparatus of this embodiment having such a configuration, first, the substrate 4 is
A plurality of substrates are arranged on the circumference around the target 2, that is, on the cylindrical substrate holder 5. Next, exhaust is performed using the exhaust device described above to make the substrate space 8 suitable for sputtering. Next, an ion beam is generated from the ion beam generating gun 1, and the ion beam irradiates the surface -L of the target 2 in the direction of the arrow 6, and from the target surface to the surface -L of the target 2,
Sputtering is performed onto the substrate 4 in the direction shown in FIG. Here, the target 2 and the target mounting shaft 3 are designed to rotate as shown by an arrow 3'. Therefore, as the target 2 rotates, the circumference I-
A sputtered thin film is sequentially formed on a plurality of substrates 41- on the substrate holder 5 arranged in a row. All boards! After being sputtered, the substrates are left for a predetermined period of time and then taken out, completing the thin film manufacturing apparatus.

By referring to FIG. 2, the positional relationship between the target and the substrate and the direction of sputtering from the target surface will be further clarified. In this figure, R indicates the distance from the rotation center of the target 2 to the substrate 4, and W indicates the width of the substrate 4.

FIG. 3 (al, tb+4t) is a graph showing the relationship between the elapsed time and the degree of vacuum in the sputtering space during each stage of sputter thin film production, with time on the horizontal axis and degree of vacuum on the vertical axis. FIG. 3 (tal) is a graph for the conventional thin film manufacturing apparatus, and FIG. 3 (b) is a graph for the apparatus of the present invention. show.

In other words, A is the process of loading and unloading the substrate, B is the process of exhausting the space between the sun and the ivy, C is the step 1 of forming a thin film on the substrate L using the ion beam direction controller, and D is the step 1 of forming a thin film on the substrate L using the ion beam direction controller. As shown in FIG.
Repeat exhausting and leaving D. In contrast, Fig. 3 (
As is clear from the comparison between a) and FIG. 3 1bl, in the apparatus of the present invention, a large number of substrates are processed at once in one evacuation process, so the time required for the sputtering process in C is By multiplying by approximately 2πR/W, ``with the same film thickness as before,
The time required for steps A, B, and D using conventional equipment can be reduced.

For example, in a conventional device, a substrate 1 with W of 7.5 cm
The time required to form a sputtered thin film on each sheet is 10 x (A + B + D) when A is 5 minutes, B is 6b minutes, C is 10 minutes, and D is 30 minutes. 10×105
-1050 minutes. On the other hand, in the apparatus of the present invention, these 10 substrates can be placed under the same conditions as described in L and using a substrate holder of R=lOXW/2π''-;12 cm that can place 10 substrates. The time required to form a thin film on everything is ((Ax 1) + (Bx )
)+(Cx 10)+(Dx 1))=5+60+]
OO+30 = 195 minutes, which is a little less than 115 minutes compared to the conventional method.

Note that in the apparatus of the embodiment described in -1-, the substrate holder 5 is fixed and the target 2 is rotated, but the target 2 is fixed and the substrate holder is
The target 2 may be rotated on a circumference as shown by an arrow 10 in FIG. Further, the target 2 and the substrate holter 5 may be rotated in opposite directions.

Further, the target 2 and the substrate holder 5 may be moved up and down relative to each other, and in this case, the area sputtered onto the substrate in the -1- downward direction can be expanded.

As is clear from the above, the device of the present invention
Through the steps up to this point, the number of substrates on which sputtered thin films are formed can be effectively increased by about 2πR/W compared to the conventional apparatus.

Incidentally, the inclination angle θ of the target 2 in the above embodiment is in the direction of the ion beam from the ion beam generation source (arrow 6
), but the effect is the same within this angle (more than 0 degrees and less than 90 degrees).

As explained above, the thin film manufacturing apparatus using ion beam sputtering of the present invention can produce a sputtered thin film on a large number of substrates in one evacuation process. It has the excellent effect of being able to significantly shorten the time and being suitable for mass production.

[Brief explanation of drawings]

FIG. 1 is an iF sectional view of a thin film manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is a plan sectional view of the apparatus shown in FIG. 1 as viewed from the ion beam generation gun side, and FIG. 3(a) 3(1)) is a graph showing the relationship between the thin film manufacturing process time and the degree of vacuum in the device using a conventional device, and FIG.
This is a similar diagram. 1...Ion beam generating gun 2 Target 3...Target mounting shaft 4...
Substrate 5...Substrate holder 8...Sputter space 9...Connection to exhaust system Patent applicant Junnosuke Nakamura, attorney for Nippon Telegraph and Telephone Public Corporation

Claims (1)

[Claims] (11) Means for forming an optimal sputtering space by evacuating the inside of the apparatus, means for generating an ion beam and irradiating the target, and sputtering from the target irradiated with the ion beam. A thin film manufacturing apparatus by ion beam sputtering, comprising means for holding a substrate on which a sputtered thin film is formed by ion beam sputtering; A thin film manufacturing apparatus by ion beam sputtering, characterized in that a means for holding a substrate and a means for holding a substrate are rotated relative to each other around a target. +31 -h The thin film manufacturing apparatus according to claim 1, characterized in that the target 8 is fixed and the means for holding the substrate is rotatable. +/l+1-: The thin film manufacturing apparatus according to claim 1, wherein the target and the means for holding the substrate rotate in opposite directions. (5) 1 - The thin film manufacturing apparatus according to any one of claims 1 to 4, wherein the target and the means for holding the substrate are configured to move downward relative to each other.