JPS5816644U - Photomask for pattern transfer - Google Patents

Photomask for pattern transfer

Info

Publication number
JPS5816644U
JPS5816644U JP1981111247U JP11124781U JPS5816644U JP S5816644 U JPS5816644 U JP S5816644U JP 1981111247 U JP1981111247 U JP 1981111247U JP 11124781 U JP11124781 U JP 11124781U JP S5816644 U JPS5816644 U JP S5816644U
Authority
JP
Japan
Prior art keywords
photomask
pattern transfer
pattern
light
ueno
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1981111247U
Other languages
Japanese (ja)
Inventor
吉見 幸一
Original Assignee
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気株式会社 filed Critical 日本電気株式会社
Priority to JP1981111247U priority Critical patent/JPS5816644U/en
Publication of JPS5816644U publication Critical patent/JPS5816644U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はフォトマスク11とウェハー12の密着状態を
示す図である。第2図は従来の方法による露光状態を示
す図で13は光、14は発生したガスを示す。 第3図は本考案による実施例を示し、31は穴である。 第4図は本考案による実施例を示し、41〜44は穴の
断面を示す。第5図は本考案による他の実施例を示し、
51は穴、52は溝を示す。
FIG. 1 is a diagram showing a state in which a photomask 11 and a wafer 12 are in close contact with each other. FIG. 2 is a diagram showing an exposure state according to a conventional method, where 13 indicates light and 14 indicates generated gas. FIG. 3 shows an embodiment according to the present invention, where 31 is a hole. FIG. 4 shows an embodiment according to the present invention, and 41 to 44 show cross sections of the holes. FIG. 5 shows another embodiment according to the present invention,
51 indicates a hole, and 52 indicates a groove.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 光により微細パターンを転写する際、ウエノ1−との密
着性を確保するために表面と裏面とを貫通する1個もし
くは複数個の穴が設けられたことを特徴とするパターン
転写用フォトマスク。
1. A photomask for pattern transfer, characterized in that one or more holes penetrating the front and back surfaces are provided to ensure adhesion to Ueno 1- when a fine pattern is transferred by light.
JP1981111247U 1981-07-27 1981-07-27 Photomask for pattern transfer Pending JPS5816644U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1981111247U JPS5816644U (en) 1981-07-27 1981-07-27 Photomask for pattern transfer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1981111247U JPS5816644U (en) 1981-07-27 1981-07-27 Photomask for pattern transfer

Publications (1)

Publication Number Publication Date
JPS5816644U true JPS5816644U (en) 1983-02-01

Family

ID=29905586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1981111247U Pending JPS5816644U (en) 1981-07-27 1981-07-27 Photomask for pattern transfer

Country Status (1)

Country Link
JP (1) JPS5816644U (en)

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