JPS5816266B2 - Jiki Bubble Youmenai Jikai Hatsuseiki - Google Patents

Jiki Bubble Youmenai Jikai Hatsuseiki

Info

Publication number
JPS5816266B2
JPS5816266B2 JP50069404A JP6940475A JPS5816266B2 JP S5816266 B2 JPS5816266 B2 JP S5816266B2 JP 50069404 A JP50069404 A JP 50069404A JP 6940475 A JP6940475 A JP 6940475A JP S5816266 B2 JPS5816266 B2 JP S5816266B2
Authority
JP
Japan
Prior art keywords
bubble
magnetic field
current
youmenai
hatsuseiki
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50069404A
Other languages
Japanese (ja)
Other versions
JPS51145232A (en
Inventor
高橋恒介
和田容房
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP50069404A priority Critical patent/JPS5816266B2/en
Publication of JPS51145232A publication Critical patent/JPS51145232A/en
Publication of JPS5816266B2 publication Critical patent/JPS5816266B2/en
Expired legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は磁気バブルチップ用面内磁界発生器に係る。[Detailed description of the invention] The present invention relates to an in-plane magnetic field generator for magnetic bubble chips.

上記面内磁界発生器はバブルチップの表面に配列したパ
ーマロイ薄膜パターンに沿って磁気バブルを移動させ、
種々の情報処理機能を達成させる面内磁界を駆動する役
割を果し重要である。
The in-plane magnetic field generator moves magnetic bubbles along the permalloy thin film pattern arranged on the surface of the bubble chip,
It plays an important role in driving the in-plane magnetic field that accomplishes various information processing functions.

これまでの面内磁界の駆動はバブルチップに直交して巻
線される1対の駆動コイル90°の位相を違えた正弦波
電流を供給することによって行なわれた。
Conventionally, in-plane magnetic field driving has been performed by supplying sinusoidal currents with a phase difference of 90° to a pair of drive coils wound perpendicularly to the bubble chip.

この時に駆動コイルに発生する逆起電圧は駆動コイルの
インダクタンスと正弦波電流の振巾と周波数の積に比例
する。
At this time, the back electromotive force generated in the drive coil is proportional to the product of the inductance of the drive coil, the amplitude of the sine wave current, and the frequency.

チップの要求する面内磁界が30工ルステツド程度でも
、周波数がIM−なると、100μHに近いインダクタ
ンスが許容電流3アンペアで耐圧100V〜150Vi
度の高価なトランジスタの使用を要求スル。
Even if the in-plane magnetic field required by the chip is about 30 millimeters, when the frequency is IM-, the inductance is close to 100 μH, and the withstand voltage is 100 V to 150 Vi with an allowable current of 3 A.
This requires the use of expensive transistors.

: 故に、従来の面内磁界発生器においては、バブルチ
ップ自体の容積が非常に小さくても、チップからの端子
取り出しを考慮して駆動コイ/lzを太き目に巻線して
いるめで、駆動コイルのインダクタンスが非常に大きく
なり、したがって、高周波のノ面内磁界を駆動するとき
に大きい逆起電圧に耐える高価なトランジスタを採用せ
ねばならぬ欠陥があった。
: Therefore, in the conventional in-plane magnetic field generator, even if the volume of the bubble chip itself is very small, the drive coil/lz is wound thickly in consideration of taking out the terminal from the chip. The inductance of the drive coil becomes very large, which necessitates the use of expensive transistors that can withstand a large back electromotive force when driving a high-frequency in-plane magnetic field.

本発明の目的は上記欠陥を容易に除去するような、面内
磁界発生器を提供することにある。
An object of the present invention is to provide an in-plane magnetic field generator in which the above-mentioned defects can be easily removed.

すなわ1ち□、本発明ではバブルチップの上に平面導体
を密着させ、パルストランスを通して平面導体を駆動す
る。
That is, in the present invention, a planar conductor is brought into close contact with the bubble chip, and the planar conductor is driven through a pulse transformer.

以下、図面にしたがあて本発明の更に詳細な説明を行な
う。
Hereinafter, the present invention will be explained in more detail with reference to the drawings.

第1図は従来9面内磁界発生器の説明図である。FIG. 1 is an explanatory diagram of a conventional nine-plane magnetic field generator.

図においてはバブルチップを配列したサブストレート1
のまわりにX軸方向の駆動コイル2とY軸方向の駆動コ
イル2′が巻線され、それらに90゜の位相の異なった
正弦波電流を供給する電流供給回路3,3′と電流切換
回路4,4′が接続されている。
In the figure, substrate 1 has bubble chips arranged.
A drive coil 2 in the X-axis direction and a drive coil 2' in the Y-axis direction are wound around the current supply circuits 3 and 3' that supply sinusoidal currents with a phase difference of 90 degrees to them, and a current switching circuit. 4 and 4' are connected.

4個のチップ(6X6mm)を配列したサブストレート
でも、その駆動コイル2または2′の容積が端子取り出
しや均一な磁界分布発生を考慮すると40X40X5m
m程度になる。
Even on a substrate with four chips (6 x 6 mm) arranged, the volume of the drive coil 2 or 2' is 40 x 40 x 5 m considering terminal extraction and uniform magnetic field distribution generation.
It will be about m.

故にバブルチップへ30エルステッド200 KHzの
面内回転磁界を供給する時に3アンペア30Vの駆動能
力のあるトランジスタが必要になる。
Therefore, when supplying an in-plane rotating magnetic field of 30 Oe and 200 KHz to the bubble chip, a transistor with a driving capacity of 3 amperes and 30 V is required.

周波数をI MHzまで高めるには電流供給回路3,3
′や電流切換回路4゜4′において150V耐圧3アン
ペア許容のトランジスタが必要になり、トランジスタに
要求される駆動能力が450ボルトアンペアと高いため
に、市販のトランジスタでは対応が難かしい。
To increase the frequency to I MHz, current supply circuit 3,3
A transistor with a voltage resistance of 150V and a tolerance of 3 amperes is required for the current switching circuit 4.4' and the current switching circuit 4.4', and since the driving capability required of the transistor is as high as 450 volt amperes, it is difficult to meet this requirement with commercially available transistors.

この原因としては、従来の面内磁界発生器での駆動コイ
ル2と2′が真に回転磁界を必要とする磁気バブルチッ
プ5の体積よりもはるかに大きな空間を駆動する点が考
えられる。
A possible reason for this is that the drive coils 2 and 2' in the conventional in-plane magnetic field generator drive a space much larger than the volume of the magnetic bubble chip 5 that truly requires a rotating magnetic field.

故に、駆動空間をバブルチップ5の体積に近ずけるよう
に、バブルチップ5に密着した平板導体によって回転磁
界を駆動する考えが生じるが、その時には平板導体へ数
10アンペアもの電流の供給が必要になるという難問が
伴っていた。
Therefore, in order to bring the drive space closer to the volume of the bubble chip 5, an idea arises to drive the rotating magnetic field by a flat conductor closely attached to the bubble chip 5, but in that case, it is necessary to supply a current of several tens of amperes to the flat conductor. It came with the challenge of becoming a

第2図は本発明の一実施例の説明図である。FIG. 2 is an explanatory diagram of one embodiment of the present invention.

図においては駆動コイル2,2′の代りに平板導体12
と12′がバブルチップ15のすぐ上で絶縁層をはさん
で直交している。
In the figure, a flat conductor 12 is used instead of the drive coils 2, 2'.
and 12' are perpendicular to each other just above the bubble chip 15 with an insulating layer in between.

平板導体12、12’はアース電位のサブストレート1
1上に並んだバブルチップ15に密着するように配置さ
れても、それの作り得る磁界が1アンペア当り1エルス
テツドと小さい。
The flat conductors 12, 12' are the substrate 1 at ground potential.
Even if the bubble chips 15 are placed in close contact with the bubble chips 15 arranged on top of the bubble chips 15, the magnetic field it can create is as small as 1 oersted per ampere.

しかし平板導体12.12’のインダクタンスLや直流
抵抗γが従来の駆動コイルの場合よりはるかに小さなも
のとなる。
However, the inductance L and DC resistance γ of the flat conductor 12, 12' are much smaller than in the case of a conventional drive coil.

平板導体12.12’の厚さを1間、巾を51n1n、
長さを40玉、導体とアース電位のサブストレート11
との距離を2.5龍とすると、Lが約25nH97’が
およそ0.0002Ωとなる。
The thickness of the flat conductor 12.12' is 1 inch, the width is 51n1n,
40 balls long, 11 conductors and ground potential substrate
Assuming that the distance between the two is 2.5 Ω, L is approximately 25 nH97' is approximately 0.0002 Ω.

非常に負荷が小さいので駆動し易い。しかし、平板導体
12.12’によって30エルステツドもの面内磁界を
供給するにはそこへ30アンペアもの電流駆動が要求さ
れる。
It is easy to drive because the load is very small. However, in order to provide an in-plane magnetic field of 30 oersted by the flat conductor 12, 12', a current drive of 30 amperes is required.

30アンペアの電流駆動時の逆起電圧が4.7V程度と
小さくなるが、それがいくら小さくても電流許容量30
アンペア以上のトランジスタはそう容易に使えない。
The back electromotive force when driven with a current of 30 amperes is as small as about 4.7 V, but no matter how small it is, the allowable current is 30 amperes.
Transistors larger than ampere cannot be easily used.

そこで、第2図では電流ステップアップ用のトランス1
6、16’が用いられている。
Therefore, in Figure 2, the transformer 1 for current step-up
6,16' are used.

もし10対1の巻数比のトランス16.16’が用いら
れると、1次側から見た平板導体12.12’の負荷は
100倍に増え、Lが2.5μHに、直流抵抗が0.0
2Ωに増えるが、トランス16.16’の1次側へ駆動
する電流は3アンペアに減る。
If a transformer 16.16' with a turns ratio of 10:1 is used, the load on the flat conductor 12.12' seen from the primary side will increase 100 times, L will be 2.5 μH, and the DC resistance will be 0. 0
2 ohms, but the current driving into the primary of transformer 16.16' is reduced to 3 amps.

その結果として1次側の逆起電圧はI MF(zでも4
7V程度に収まる。
As a result, the back electromotive force on the primary side is IMF (also 4 at z).
It falls within about 7V.

故に現実的なトランジスタを用いて、電流駆動回路13
と14.13’と14′の経済的な実現が可能になる。
Therefore, by using practical transistors, the current drive circuit 13
and 14.13' and 14' can be realized economically.

さらに、トランジスタに要求される駆動能力は47X3
=141ボルト・アンペアであって、従来の場合の半分
以下になる。
Furthermore, the driving ability required for the transistor is 47×3
= 141 volts/amperes, which is less than half of the conventional case.

: 各チップ15からの端子取り出しは平板導体12.
12’のない部分から行なえばよい。
: Terminals are taken out from each chip 15 using a flat conductor 12.
It is sufficient to start from the part without 12'.

端子取り出しを更に容易にするために平板導体12.1
2’にスリット孔を設けることも考えられる。
Flat conductor 12.1 for easier terminal removal
It is also conceivable to provide a slit hole at 2'.

また、平板導体12、12’は直接にバブルチップ15
の上へ蒸着されてもよい。
In addition, the flat conductors 12 and 12' are directly connected to the bubble chip 15.
may be deposited on top of.

以上のように、本発明によれば従来の面内磁界発生器で
周波数を高くすると非現実的に高価なトランジスタの必
要となる欠陥が容易に除去される。
As described above, according to the present invention, by increasing the frequency in a conventional in-plane magnetic field generator, defects that would require an unrealistically expensive transistor can be easily eliminated.

なお、以上の説明において平板導体12と12′は4つ
のチップ15の上を順次に通過するように配線されてい
るが、全チップ15あるいはパーマロイ薄膜パタンだけ
をはさむように各々の下側へ折り返えされてもよく、以
上の記述は何ら本発明の範囲を限定するものでない。
In the above explanation, the flat conductors 12 and 12' are wired so as to pass sequentially over the four chips 15, but they can be folded under each so as to sandwich all the chips 15 or only the permalloy thin film pattern. The above description is not intended to limit the scope of the invention in any way.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の面内磁界発生器の説明図、第2図は本発
明の詳細な説明図である。 図において、1と11はサブストレート、2と2′は駆
動コイル、12と12′は平板導体、3と3′および1
3と13′は電流供給回路、4と4′および14と14
′は電流切換回路、5と15はバブルチップ、16と1
6′はトランスである。
FIG. 1 is an explanatory diagram of a conventional in-plane magnetic field generator, and FIG. 2 is a detailed explanatory diagram of the present invention. In the figure, 1 and 11 are substrates, 2 and 2' are drive coils, 12 and 12' are flat conductors, 3, 3', and 1
3 and 13' are current supply circuits, 4 and 4' and 14 and 14
' is a current switching circuit, 5 and 15 are bubble chips, 16 and 1
6' is a transformer.

Claims (1)

【特許請求の範囲】[Claims] 1 磁気バブルチップの上ではマ直交すφ2本の平板導
体と、前記平板導体に接続されるトランスと、前記1ラ
ンスへ選択的に交流電流を摂給する電流駆動回路とを含
む磁気バブル用面内磁界発生器。
1. A magnetic bubble surface including two φ flat conductors perpendicular to each other on the magnetic bubble chip, a transformer connected to the flat conductors, and a current drive circuit that selectively supplies alternating current to the one lance. Internal magnetic field generator.
JP50069404A 1975-06-09 1975-06-09 Jiki Bubble Youmenai Jikai Hatsuseiki Expired JPS5816266B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50069404A JPS5816266B2 (en) 1975-06-09 1975-06-09 Jiki Bubble Youmenai Jikai Hatsuseiki

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50069404A JPS5816266B2 (en) 1975-06-09 1975-06-09 Jiki Bubble Youmenai Jikai Hatsuseiki

Publications (2)

Publication Number Publication Date
JPS51145232A JPS51145232A (en) 1976-12-14
JPS5816266B2 true JPS5816266B2 (en) 1983-03-30

Family

ID=13401621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50069404A Expired JPS5816266B2 (en) 1975-06-09 1975-06-09 Jiki Bubble Youmenai Jikai Hatsuseiki

Country Status (1)

Country Link
JP (1) JPS5816266B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6168160U (en) * 1984-10-11 1986-05-10
JPS6168161U (en) * 1984-10-11 1986-05-10

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992015462A1 (en) * 1991-03-04 1992-09-17 Pilot Precision Kabushiki Kaisha Shaking type mechanical pencil

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5061144A (en) * 1973-09-28 1975-05-26

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5061144A (en) * 1973-09-28 1975-05-26

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6168160U (en) * 1984-10-11 1986-05-10
JPS6168161U (en) * 1984-10-11 1986-05-10

Also Published As

Publication number Publication date
JPS51145232A (en) 1976-12-14

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