JPS58161505A - Complementary circuit - Google Patents

Abstract

PURPOSE:To obtan a complementary circuit which has small dependence on the power supply voltage and small current consumption, by constituting a high frequency working circuit containing an oscillating circuit with a transistor having high threshold voltage. CONSTITUTION:A complementary integrated circuit is provided with a crystal oscillator 8, an oscillating capacities 9 and 10, a high frequency working circuit 11 including an oscillating circuit, a logical circuit 12, an output buffer 13 and an output terminal 14. At the same time, the above-mentioned circuit blocks are integrated to a region 15 consisting of a transistor of high threshold voltage and a region 16 consisting of a transistor of low threshold voltage. The high threshold voltage is provided to the circuit 11; while the low threshold voltage is set to the circuit 12 and the buffer 13. In such constitution, both the dependence on the power supply voltage and the current consumption can be reduced for a complementary circuit.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a complementary circuit in which frequency dependence on power supply voltage is reduced and current consumption is reduced.

How to divide and use the standard oscillation frequency of a crystal oscillator in crystal watches, and how to minimize the dependence of the frequency on the power supply voltage in devices that use small batteries as a power source. It is extremely important to keep current consumption as low as possible.

The present invention sets the threshold voltages of at least one of the p-channel MO3 type transistor and the N-channel MO8 type transistor constituting such a complementary MO3 type integrated circuit to two or more types, and operates a high frequency operation circuit including a crystal oscillation circuit with a high threshold voltage. The purpose of this is to improve the dependence of the frequency on the power supply voltage and reduce current consumption by using transistors of the same type. That is, the present invention configures the high-frequency circuit portion with transistors with a high threshold voltage to reduce dependence on power supply voltage and reduce current consumption, and also sets the threshold voltage of the MO8 type transistor that constitutes circuits other than the high-frequency operation circuit to the high-frequency operation circuit. By setting the voltage lower than the threshold voltage and reducing the area occupied by components other than the high-frequency operation circuit, it is possible to integrate the entire integrated circuit.

The present invention will be explained in detail below while comparing it with a conventional example.

Figure 1 shows in block form a conventional example of a complementary MO8 type electronic watch with a 32.768 KHz crystal oscillator circuit. Circuit 4, logic circuit 6, output buffer 6
, and from the output terminal 7, the P-channel MOS transistor and the N-channel MOS transistor of the active elements in each of the circuit blocks 4.5 and 6 each have a unique threshold voltage determined by the configuration or regulation of manufacturing conditions, and , are usually set to have relatively low threshold voltages.

FIG. 2 shows a complementary integrated circuit according to an embodiment of the present invention, which is a complementary MO8 type electronic timepiece having a 32,768 KHz crystal oscillation circuit. circuit, a high frequency operation circuit 11 including a frequency dividing circuit, a logic circuit 12, an output buffer 13, and an output terminal 14, and each of the above circuit blocks is grouped into a side 16 with a high threshold voltage and a side 16 with a low threshold voltage. In the example shown in FIG. 2, the high frequency operation circuit 11 including the oscillation circuit is set to a high threshold voltage, and the logic circuit 12 and output buffer 1 are
3 is the low threshold voltage. Two types of threshold voltage configurations are adopted.

Figure 3 shows the frequency variation △f with respect to the power supply electronic vDD when the threshold voltage of the oscillation circuits in Figures 1 and 2 is changed.
/fo is shown as an example, and the frequency fluctuation is the power supply voltage vD.
It is based on D-1,6v.

Here, fo is VDD=1. sV 0 o'clock (D lap tLk
'ir: H added, △f (frequency and f when dvDD=1.5.

It represents the frequency difference between Figure 3 a, b.

C indicates the relationship between the threshold voltage and the threshold electron, and a is 0.2 V, b is 0.3 V, and C75.
:0. T V (7) Corresponds to each threshold value. As shown in Fig. 3, by setting the threshold voltage of the oscillation circuit to high < (0, TV), the dependence of the frequency on the power supply voltage can be reduced by
It can be seen that it is flat over a wide range around D=1.6V, and that the characteristics can be improved.

In addition, when the active element that constitutes the high frequency operation circuit including the oscillation circuit is set to a high threshold voltage type Uf: (0, TV), the current consumption is 1/6 compared to when the threshold voltage is low (0,2 to 0,3 V). This can be reduced to a minimum.

In the embodiment shown in FIG. 2, the logic circuit and the output buffer 13 are constructed of transistors with a relatively low threshold voltage, but if necessary, these may be constructed with transistors with a relatively high threshold voltage. It has the disadvantage that the degree of integration cannot be improved.

As described above, the present invention has high industrial value because it can realize a complementary circuit with a simple configuration, less dependence on power supply voltage, and low current consumption.

[Brief explanation of drawings]

Figure 1 is a diagram of a conventional 32,768 KHz crystal oscillation circuit. Figure 2 shows 32,768Kf according to an embodiment of the present invention.
(z Crystal oscillation circuit diagram, Figure 3 is a characteristic diagram showing the relationship between power supply voltage and frequency fluctuation with respect to threshold voltage. 8 = 32,768 KHz crystal oscillator, 9, 1
0...--Oscillation capacity, 11...Oscillation circuit''
High frequency operation circuit included in all units, 12...Logic circuit, 1
3...Output buffer, 14...Output terminal, 15...Region composed of transistors with high threshold voltage, 16...Transistor with low threshold voltage @ area consisting of.

Claims (1)

[Claims] A complementary device comprising a plurality of MO8 type transistors having threshold voltages set to two or more types, and comprising a high frequency operation circuit including at least an oscillation circuit using the MO8 type transistors having a relatively high threshold voltage of the MO8 type transistors. type circuit.