JPS58160765A - Selective absorber for solar heat collector - Google Patents

Selective absorber for solar heat collector

Info

Publication number
JPS58160765A
JPS58160765A JP57043130A JP4313082A JPS58160765A JP S58160765 A JPS58160765 A JP S58160765A JP 57043130 A JP57043130 A JP 57043130A JP 4313082 A JP4313082 A JP 4313082A JP S58160765 A JPS58160765 A JP S58160765A
Authority
JP
Japan
Prior art keywords
absorber
sunlight
solar
period
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57043130A
Other languages
Japanese (ja)
Other versions
JPH0432301B2 (en
Inventor
Shigeru Ando
安東 滋
Masayasu Koitabashi
小板橋 正康
Junjiro Kai
甲斐 潤二郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57043130A priority Critical patent/JPS58160765A/en
Publication of JPS58160765A publication Critical patent/JPS58160765A/en
Publication of JPH0432301B2 publication Critical patent/JPH0432301B2/ja
Granted legal-status Critical Current

Links

Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24HEATING; RANGES; VENTILATING
    • F24SSOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S70/00Details of absorbing elements
    • F24S70/30Auxiliary coatings, e.g. anti-reflective coatings
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/40Solar thermal energy, e.g. solar towers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Thermal Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)

Abstract

PURPOSE:To increase the ratio of sunlight absorbance modulus to radiation heat, by arranging an electoconductive sheet having perforated holes arranged regularly in front of an absorber having a high sunlight absorbance modulus. CONSTITUTION:The electroconductive sheet 2 such as a metal mesh sheet in which the perforated holes 2a are arranged regularly is arranged just below a transparent cover 1, and the absorber 3 having a high sunlight absorbance modulus is placed just below the electroconductive sheet 2 so that a selective absorber is formed. When the size of the preforated holes 2a is approximately in the range of the wave length of sunlight, most of the sunlight arriving at the mesh sheet 2 passes through the mesh sheet 2, and most of heat and light having wave lengths longer than that of the sunlight is reflected thereby. Thus, by optimizing the size of the perforated holes 2a, a selective absorber can be obtained with the sunlight absorbance modulus being increased and the heat emissivity being decreased.

Description

【発明の詳細な説明】 この発明は太陽熱コレクタ用選択吸収体に関し.特に、
規則的に配列された貫通孔を有する電気導伝性薄板を太
陽光吸収率の大きな吸収体の前面に配置することによシ
、太陽党の波長範囲の電磁波を吸収し、それより長い波
長範囲の電磁波を反射するようにした選択吸収体に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a selective absorber for a solar collector. especially,
By placing an electrically conductive thin plate with regularly arranged through holes in front of an absorber with a high solar absorption rate, it absorbs electromagnetic waves in the wavelength range of the sun and absorbs electromagnetic waves in a longer wavelength range. This invention relates to a selective absorber that reflects electromagnetic waves.

太陽熱コレクタ用吸収体としては太陽jtK対して大き
な吸収率をもち、コレクタの動作温度において小さな熱
放射率をもつもの、換言すれに、太陽光の波長範囲の電
磁波に対して大きな吸収率をもち、それ以上の長い波長
範囲の電磁波に対して大きな反射率をもつ吸収体がコレ
クタの集熱効率を高めるために必要である。このような
特性をもつ吸収体は選択吸収体と呼ばれ。
As an absorber for a solar heat collector, one that has a large absorption rate for the sun jtK and a small thermal emissivity at the operating temperature of the collector, in other words, a material that has a large absorption rate for electromagnetic waves in the wavelength range of sunlight, An absorber with a high reflectance for electromagnetic waves in a longer wavelength range is required to improve the heat collection efficiency of the collector. Absorbers with these characteristics are called selective absorbers.

従来から、(1)赤外域で反射率の大きな金属面上に吸
収端が1000〜3000n!El(ナノメータ)の半
導体膜を設け、太陽光吸収率を半導体膜で大きくシ、熱
放射率を金属面により小さくしたもの、(2)赤外域で
反射率の大きな金属面上に誘電体膜を設け、その光干渉
作用による吸収が太陽光吸収率に入るように誘電体膜の
厚さを適当にしたもの、(3)金属表面に太陽光のカッ
トオフ波長程度の凹凸を作シ、この波長よシも短かい波
長の光すなわち太陽光をキャビティ効果によって吸収し
、一方、長い波長の光(熱)に対しては平滑な7表面、
すなわち熱放射率が小として働くようにしたものなどが
考案されている。
Conventionally, (1) the absorption edge on a metal surface with high reflectance in the infrared region is 1000 to 3000n! (2) A dielectric film is placed on a metal surface that has a high reflectance in the infrared region. (3) The thickness of the dielectric film is adjusted appropriately so that the absorption due to the optical interference effect is included in the sunlight absorption rate. It also absorbs short wavelength light (sunlight) through the cavity effect, while absorbing long wavelength light (heat) through a smooth surface.
In other words, devices have been devised that operate with a low thermal emissivity.

この発明は上記のような従来のものとは異なる構造と原
理に基づく選択吸収体を提案するものである。まず、こ
の発明による選択吸収体の構造と原理につき、この発明
の一実施例を用いて説明する。
This invention proposes a selective absorber based on a structure and principle different from the conventional ones as described above. First, the structure and principle of the selective absorber according to the present invention will be explained using one embodiment of the present invention.

第1図はこの発明による一実施例の拡大斜視図で、(1
1は透明カバー、(2)は透明カバー(!)の直下に設
けられた電気導伝性薄板で、規則的に配列された貫通孔
(2a)を有するもの、たとえに金属製メツシュ板(以
後、この薄板またはこれに相当するものをメツシュ板と
呼ぶ)、(a+はメツシュ板(2)に対面して設けられ
た太陽光吸収率の大きな吸収体をそれぞれ示す。
FIG. 1 is an enlarged perspective view of an embodiment according to the present invention.
1 is a transparent cover, (2) is an electrically conductive thin plate provided directly under the transparent cover (!), and has regularly arranged through holes (2a), such as a metal mesh plate (hereinafter referred to as , this thin plate or its equivalent is called a mesh plate), (a+ indicates an absorber with a high sunlight absorption rate, which is provided facing the mesh plate (2).

つ 透明カバー(11を透過した太陽光はメツシュ板(2)
に入射する。このとき、メツシュ板(2)を電気導伝体
すなわち赤外域で高い反射率をもつもので作シ1貫通孔
(21L)の寸法を太陽光の波長範囲程度の大きさとな
し、さらに貫通孔(2a)を規則的に配列させれは、太
陽光の大部分はこのメツシュ板(2)を透過し、太陽光
よシも長い波長範Hの光(熱)の大部分はメツシュ板(
2)Kよシ反射される。すなわち、この発明では金属製
のメツシュ板(2)と吸収体(3)とを組合せたものに
おいて。
The sunlight that passes through the transparent cover (11) is exposed to the mesh plate (2).
incident on . At this time, the mesh plate (2) is made of an electrical conductor, that is, one that has a high reflectance in the infrared region, and the dimensions of the first through hole (21L) are made to be about the same as the wavelength range of sunlight, and the through hole ( 2a) are arranged regularly, most of the sunlight passes through the mesh plate (2), and most of the light (heat) in the wavelength range H, which is longer than that of sunlight, passes through the mesh plate (2).
2) It is reflected by K. That is, in the present invention, a metal mesh plate (2) and an absorber (3) are combined.

メツシュ板(2)の寸法を最適化することによシ。By optimizing the dimensions of the mesh plate (2).

太陽光吸収率の大きなそして熱放射率の小さな選択吸収
体を得んとするものである。
The objective is to obtain a selective absorber with high solar absorption and low thermal emissivity.

金属メツシュのマイクロ波電波ないし遠赤外光の透過現
象については導波管理論や各種の実験によプ明らかであ
る。たとえは、三石氏らによれば(Japanise 
Journal of AppliedPhysi9s
 、第2巻、ページ574〜577、 1!US年)8
2μmの素線で212μmの〈シ返し周期の金属メツシ
ュでマイクロ波電波の透過率は250μmの波長近傍で
最大になることを示している。
The transmission phenomenon of microwave radio waves or far-infrared light through metal mesh is clear from waveguide management theory and various experiments. According to Mitsuishi et al.
Journal of AppliedPhysi9s
, Volume 2, Pages 574-577, 1! US year) 8
It is shown that the transmittance of microwave radio waves reaches its maximum near the wavelength of 250 μm in a metal mesh with a 2 μm wire and a 212 μm return period.

また細かい金属メツシュについてはRank 氏う(ム
pplie40ptics 、  第1巻、ページ64
3〜64虐、 1162年)は幅12μm2周期50μ
朧の金属メツシュで約60μmのピーク透過波長を示し
ている。さらに、坂井氏ら(工nfrared Phy
sics。
Regarding fine metal mesh, see Mr. Rank (pplie40ptics, Volume 1, Page 64).
3-64, 1162) has a width of 12 μm and 2 periods of 50 μ
The hazy metal mesh exhibits a peak transmission wavelength of approximately 60 μm. Furthermore, Mr. Sakai et al.
sics.

第1s巻、ページ131〜140. 19711年)は
周期1t1μmのす1500金属メツシユで115μm
のピーク透過波長を示している。
Volume 1s, pages 131-140. 19711) is a 1500 metal mesh with a period of 1t1μm and 115μm.
The peak transmission wavelength is shown.

しかし、これらの文献はいずれも、波長の長い電磁波を
対象にして、金属メツシュを透過する電磁波の透過率の
向上と透過電磁波の狭帯域化を計ったものである。一方
、この発明においては、できる限シ多くの太陽光を透過
させて。
However, all of these documents aim at improving the transmittance of electromagnetic waves that pass through a metal mesh and narrowing the band of the transmitted electromagnetic waves, targeting electromagnetic waves with long wavelengths. On the other hand, in this invention, as much sunlight as possible is allowed to pass through.

それよシ長い波長の電磁波をできふ限)反射させるよう
にした金属メツシュを対象にしたもので、金属メツシュ
を透過させようとする電磁波の波長は文献のものよpも
短かく、かつその波長範囲は太陽光の波長範囲0.3〜
2..5μm と広域となっている。
It is aimed at a metal mesh that reflects electromagnetic waves with longer wavelengths (as much as possible), and the wavelength of the electromagnetic waves that are transmitted through the metal mesh is much shorter than that in the literature. The range is the wavelength range of sunlight from 0.3 to
2. .. It has a wide area of 5 μm.

以下に第1図のように構成された選択吸収体において、
メツシュ板(2)の貫通孔の寸法、形状と太陽光吸収率
、熱放射率との関係を説明する。
In the selective absorber configured as shown in FIG. 1 below,
The relationship between the dimensions and shape of the through holes of the mesh plate (2), solar absorption rate, and thermal emissivity will be explained.

gz図はメツシュ板の寸法を示す図で、Dは格子の直角
2方向の周期、aは線@または線径。
The gz diagram is a diagram showing the dimensions of the mesh plate, where D is the period in two orthogonal directions of the lattice, and a is the wire @ or wire diameter.

Tは厚さを示す。この場合、S幅(dlと厚さくテ)は
電磁波のエネルギの浸透深さよ)も十分に大きいことが
必要で1凱またメツシュ板(2)は赤外域での反射率の
大きな素材すなわち、電気的導伝体から作る必要がある
。吸収体(3)としては金属、プラスチックスなどから
なる基板に黒色ペンキなどを塗着して太陽光吸収率を大
きくしたものを使えはよい。
T indicates thickness. In this case, the S width (dl and thickness) (which is the penetration depth of electromagnetic wave energy) must also be sufficiently large, and the mesh plate (2) must be made of a material with high reflectivity in the infrared region, that is, electrical It must be made from a suitable conductor. As the absorber (3), a substrate made of metal, plastic, etc. coated with black paint or the like to increase the sunlight absorption rate may be used.

taS図は以上のように構成した選択吸収体の分光吸収
率を示す。この場合9分光吸収率は波長(λ)、メツシ
ュ板(2)の周期Φ)、線幅((1)などによって決ま
り、線幅(d)を周期p)で除した値(d/D )を助
変数にして、光の波長を周期で除した値(λ/D)の関
数として分光吸収率を表わすのがfl 利tx f) 
テ、 横軸tλ/Dでm盛j)、 (1/D=120と
a、25に対する分光吸収率をそれぞれWXs図(a)
および(b)に示した。ここで、メツシュ板(21とし
ては周期300nn+から11000nの範囲の寸法の
もの、吸収体(3)はステンレス鋼板面に黒色ペンキを
塗着した太陽光吸収率L95以上のものを用いた。
The taS diagram shows the spectral absorption rate of the selective absorber configured as described above. In this case, the 9-spectral absorption rate is determined by the wavelength (λ), the period Φ of the mesh plate (2), the line width ((1), etc., and is the value (d/D ) divided by the line width (d) by the period p). The spectral absorption rate is expressed as a function of the wavelength of light divided by the period (λ/D) using as a parameter.
Te, horizontal axis tλ/D m height), (1/D=120, a, spectral absorption rate for 25, respectively, WXs diagram (a)
and (b). Here, the mesh plate (21) had a size with a period in the range of 300 nn+ to 11,000 nm, and the absorber (3) was a stainless steel plate with black paint painted on it and had a sunlight absorption rate of L95 or higher.

第3図から明らかなように、λ/D=1.2近傍で分光
吸収率は最大圧なシ、また0分光吸収率曲線の広が夛幅
はd / D 値が小さい程大きくなっている。このよ
うな分光吸収特性をもつものに対して太陽光吸収率を大
きくするためには太陽光の分光エネルギ分布をこの最大
吸収値近傍に合致するようにメツシュ板(210周期を
選べばよい。また、d/D値を小さくすれは太陽光吸収
率を大きくするのには有利であるが、d/D値を小さく
すると、長波長側での吸収が大きくなシ。
As is clear from Figure 3, the spectral absorption rate is at its maximum near λ/D = 1.2, and the width of the 0-spectral absorption curve increases as the d/D value decreases. . In order to increase the sunlight absorption rate for something with such spectral absorption characteristics, it is sufficient to select a mesh plate (210 cycles) so that the spectral energy distribution of sunlight matches the vicinity of this maximum absorption value. Although decreasing the d/D value is advantageous in increasing the sunlight absorption rate, decreasing the d/D value results in large absorption on the long wavelength side.

したがって熱放射率も大きくなるのでd/D値を無制限
に小さくできない。したがって、Dおよび(1/D値に
はこの発明の選択吸収体の太陽光吸収率と熱放射率を最
適化するような範囲がある。
Therefore, the thermal emissivity also increases, so the d/D value cannot be reduced indefinitely. Therefore, there is a range of D and (1/D values) that optimizes the solar absorption and thermal emissivity of the selective absorber of this invention.

第1表はDおよびd/D iiに対するこの発明の選択
吸収体の太陽光吸収率と熱放射率を示す。
Table 1 shows the solar absorption and thermal emissivity of the selective absorber of this invention for D and d/D ii.

これらの値は第3図の曲線とエアマス2における太陽光
分光エネルギ分布および100″ICにおける黒体放射
分光エネルギ分布を用いて通常の方法にて計算て求めた
These values were calculated using the curve in FIG. 3, the sunlight spectral energy distribution at Air Mass 2, and the blackbody radiation spectral energy distribution at 100'' IC using a conventional method.

タネ1表 第1表よシ明らかなように周周期5Q(inlkのメツ
シュ板(2)が大きな太陽光吸収率と小さな熱放射率を
示し、太陽熱コレクタ用吸収体として好適であり、とく
に太陽光吸収率と熱放射率の比(α/g)は大きく高温
度の集熱用吸収体に適している。また0周期300nm
からsoonmのメツシュ板においても太陽光吸収率な
らびにα/1値が大きく集熱用吸収体として好適である
。しかし、m期SOOnmからgoonn o範囲外0
40では太陽光吸収率が大幅に低下するので、集熱用吸
収体としては不適当である。一方、  d/D値に関し
ては、0.20から(L25の範囲が大きな太陽光吸収
率・と小さな熱放射率を与え、集熱用吸収体として好適
である。d/D値が(L25以上では太陽光吸収率は急
激に低下し、たとえば(1/D =0.30では周期a
oonmから800nm 4C対して太陽光吸収率は1
4以下となる。また、  (L/D値がrL20以下で
は太陽光吸収率は低下し、かつ熱放射率は上昇する。た
とえは、d/D:(L15では周期3 G On1m1
から@00nmに対して、太陽光吸収率はα5以下、熱
放射率は00%以上となり、集熱用吸収体として不適当
である。すなわち、メツシュ板(2)としては周′1j
4(D)がsoonmから800nmの範囲で、線幅(
a)と周期の比(a/p)が0.20から0.25の範
囲のものがこの発明の集熱用吸収体として適当である。
Table 1 As is clear from Table 1, the mesh plate (2) with a period of 5Q (inlk) exhibits a large solar absorption rate and a small thermal emissivity, and is suitable as an absorber for solar heat collectors, especially in sunlight. The ratio of absorption rate to thermal emissivity (α/g) is large, making it suitable for high-temperature heat collecting absorbers.
Also, the mesh board from soon to soon has a large sunlight absorption rate and α/1 value, and is suitable as an absorber for heat collection. However, from m-phase SOOnm to goonno range 0
40, the sunlight absorption rate decreases significantly, making it unsuitable for use as a heat collecting absorber. On the other hand, regarding the d/D value, the range from 0.20 to (L25) gives a large solar absorption rate and small thermal emissivity, and is suitable as an absorber for heat collection. For example, when (1/D = 0.30, the period a
Solar absorption rate is 1 for 4C from oonm to 800nm
4 or less. In addition, (when the L/D value is rL20 or less, the solar absorption rate decreases and the thermal emissivity increases. For example, d/D: (at L15, the period is 3 G On1 m1
For @00 nm, the solar absorption rate is less than α5 and the thermal emissivity is more than 00%, making it unsuitable as an absorber for heat collection. In other words, the mesh plate (2) has a circumference of '1j
4(D) is in the range from soonm to 800nm, and the line width (
A material having a ratio of a) to period (a/p) in the range of 0.20 to 0.25 is suitable as the heat collecting absorber of the present invention.

上記実施例では、メツシュ板(2)の直下に配置した吸
収体+3)として、黒色ペンキを塗着した金属板または
プラスチックス板を用いた場合を示したが、吸収体(3
)としてはこれらの他に黒色流体を用いることもできる
。次にその実施例につき説明する。
In the above embodiment, a metal plate or a plastic plate coated with black paint was used as the absorber +3 placed directly under the mesh plate (2).
) In addition to these, a black fluid can also be used. Next, an example thereof will be explained.

第4図はこの発明による一実施例の拡大斜視図で、(1
)はガラス板、プラスチックス板などからなる透明カバ
ー、C2)は透明カバー(11に対面して設けられたメ
ツシュ板、(311I′i太陽光吸収体で。
FIG. 4 is an enlarged perspective view of an embodiment according to the present invention.
) is a transparent cover made of a glass plate, plastic plate, etc., C2) is a mesh plate provided facing the transparent cover (11), (311I'i sunlight absorber).

容器(4)とその中を流通する黒色流体(5)よりなる
It consists of a container (4) and a black fluid (5) flowing through it.

容器(4)においては、メツシュ板(2)に対面する表
面は太陽光反射率の小さな材料、たとえば、ガラス、ア
クリル樹脂、ふっ素樹脂などのプラスチックスなどで構
成されている。黒色流体(5)としては、太陽光吸収率
の大きなものであればよい、たとえばカーボンブラック
、シリコン、ゲルマニウムなどの微細粉末を水または有
機溶媒中に分散さ騒たものや、黒色染料で着色した水ま
たは有機溶媒などが適当である。
In the container (4), the surface facing the mesh plate (2) is made of a material with low solar reflectance, such as glass, acrylic resin, plastics such as fluorine resin, etc. The black fluid (5) may be one that has a high solar absorption rate; for example, a fine powder of carbon black, silicon, germanium, etc. dispersed in water or an organic solvent, or one colored with a black dye. Water or organic solvents are suitable.

透明カバー(りを透過し、メツシュ板(2)に入射した
太陽光は上記実施例にて説明したようにメツシュ板(2
)の寸法で定まる透過率にて、メツシュ板+21を透過
して、容器(4)の表面に入射するが。
The sunlight that passes through the transparent cover (2) and enters the mesh plate (2) is exposed to the mesh plate (2) as explained in the above embodiment.
) passes through the mesh plate +21 and enters the surface of the container (4).

その太陽光のほとんどは容器(4)の表面に吸収または
それを透過する。容器(4)表面に吸収された太陽光は
熱に質わシその容器(4)内の黒色流体(5)に伝達し
、また、容器(4)を透過した太陽光は黒色流体(51
に吸収され、ともに、有効に熱として外部系に取り出せ
る。この場合、透明カバー(1)に厚さ3Mの鉄含有量
の低いソーダガラス、メツシュ板に一幅0.2μm、く
シ返し周期0.8μmのニッケルよ)なるもの、容器(
4)を31EJEのソーダガラスより製作したもの、お
−よひ黒色流体(5)としてエチレングリコール5oz
1%水溶液中にカーボンブラック3重tSを分蔽させた
もの。
Most of that sunlight is absorbed by or transmitted through the surface of the container (4). The sunlight absorbed by the surface of the container (4) is converted into heat and transferred to the black fluid (5) inside the container (4), and the sunlight that has passed through the container (4) is transferred to the black fluid (51).
Both can be effectively taken out as heat to the external system. In this case, the transparent cover (1) is 3M thick soda glass with low iron content, the mesh plate is made of nickel with a width of 0.2 μm and a repeating period of 0.8 μm), and the container (
4) was made from 31EJE soda glass, and 5oz of ethylene glycol was used as the black fluid (5).
Carbon black triple tS is separated in a 1% aqueous solution.

などから構成した太陽熱コレクタ用阪収体において、吸
収体の温度60℃に対して、太陽光吸収率a、1i以上
、熱放射率αo1以下を得た。
In the absorber for a solar heat collector constructed from the above, a solar absorption rate of 1i or more and a thermal emissivity of αo1 or less were obtained for an absorber temperature of 60°C.

また、メツシュ板(2)として太陽光透過率の大きな誘
電体板上に電気導電体よりなる貫通孔を有する薄層を設
けたものを用いることもできる。
Further, as the mesh plate (2), it is also possible to use a dielectric plate having a high solar transmittance and provided with a thin layer made of an electrical conductor and having through holes.

次にその実施例につきi1i!明する。Next, i1i! I will clarify.

第5図はこあ発明による一実施例の拡大斜視図で、(1
)はガラス板、プラスチックス板などからなる透明カバ
ー、(2)は透明カバー(1)K対面して設けられたメ
ツシュ板、(6Hiメツシユ板(鉛を保持するための基
板の役目をする誘電体板、(3)は黒色ペンキ塗装を施
こした鉄板などからなる太陽光吸収体を示す。メツシュ
板(21を誘電体板(6)上に形成するためKFi、た
とえば、ガラス板。
FIG. 5 is an enlarged perspective view of an embodiment according to the invention.
) is a transparent cover made of glass plate, plastic plate, etc., (2) is a transparent cover (1) is a mesh plate provided facing K, (6Hi mesh plate (dielectric plate that serves as a substrate for holding lead) The body plate (3) shows a sunlight absorber made of an iron plate coated with black paint, etc. In order to form the mesh plate (21) on the dielectric plate (6), KFi, for example, a glass plate is used.

ポリエチレンなどのプラスチックス板上に通常の蒸着な
どの方法にてクロムなどの金属薄膜を形成した後、電子
ビーム描画加工法などを用いて、クロム薄膜に上記メツ
シュ板(21のような貫通孔(2a)を設けれはよい。
After forming a thin film of metal such as chromium on a plastic plate such as polyethylene using a normal vapor deposition method, the mesh plate (through holes such as 21 It is good to have 2a).

なお、吸収体(3)K対面する誘電体板(6)の長面は
吸収体(3)からの放熱(放射赤外線)に対して大きな
反射率をもつことが要求される。
Note that the long surface of the dielectric plate (6) facing the absorber (3) K is required to have a large reflectance for heat dissipation (radiated infrared rays) from the absorber (3).

一例としてポリエチレン製の誘電体板(6)上に形成し
た線幅12μm、l返し周期lL8μmのクロム蒸着膜
のメツシュ板(2)と黒色ペンキ塗装の鉄板の吸収体(
3)を組合せた場合、a収体(3)の温度60℃におい
て、太陽光吸収率0.50以上と熱放射率&1以下を実
験で得た。
As an example, a mesh plate (2) of a chromium vapor-deposited film with a line width of 12 μm and a return period of 8 μm formed on a dielectric plate (6) made of polyethylene, and an absorber made of an iron plate coated with black paint (
When 3) is combined, a solar absorption coefficient of 0.50 or more and a thermal emissivity of &1 or less were obtained in experiments at a temperature of 60° C. for the a-collection body (3).

なお、上記実施例では規則的に配列された貫通孔(2a
)を有する薄板あるいは薄層として、正方形状貫通R(
2a)が2次元的に同一周期で配列されたものを示した
が0貫通孔(2&)の形状としては正方形のはかに六角
形などの多角形や円などでも同様の効果をもち、またそ
の配列は2次元的に一定の規則にしたがって配列された
ものであれはよい。また、薄板又は薄層として、板状の
もの!竺したが、細線を編み合せダような金網状のもの
でもよい。
In addition, in the above embodiment, the through holes (2a
) as a thin plate or layer with a square through-hole R(
2a) are shown arranged two-dimensionally at the same period, but the shape of the 0 through holes (2&) may be a square, a polygon such as a hexagon, a circle, etc., and have the same effect. The array may be two-dimensionally arranged according to a certain rule. Also, as a thin plate or thin layer, it is plate-shaped! Although it is made of wire, it may also be made of wire mesh made of thin wires knitted together.

以上のように、この発明による選択吸収体は大きな太陽
光吸収率と小さな熱放射率をもち。
As described above, the selective absorber according to the present invention has a large solar absorption rate and a small thermal emissivity.

とくに太陽光$L醪率と熱放射率の比(α/ε)115
0以上で、従来の銅に黒色クロムメッキをした選択吸収
体などの10程fifK比較し、極めて大きく、高温度
の集熱用コレクタに使用して。
In particular, the ratio of sunlight $L morbidity and thermal emissivity (α/ε) 115
0 or higher, compared to about 10 fifK of conventional selective absorbers made of copper plated with black chrome, and can be used in extremely large, high-temperature heat collectors.

極めて有効である。Extremely effective.

【図面の簡単な説明】[Brief explanation of the drawing]

視図、i!3図はこの発明の一実施′例による選択吸収
体の分光吸収特性図、第4図はこの発明の他の実施例に
よる選択吸収体を示す拡大斜視図。 第5図はこの発明の他の実施例による選択吸収体を示す
拡大斜視図である。 (11・・・透明カバー、C21・・・メツシュ板(電
気導伝性薄板)、+31・・・太陽光吸収体、(4)・
・・容器、(5)・・・黒色流体、(6)・・・誘電体
板。 なお1図中、同一符号は同一、また嬬相当部分を示す。 代理人 葛 野 信 − キ (替 に?ち L 半 2 凶 *J  @ (峠 入る 1・ ν久 収 入る 率4− へ ¥−5a 尺P%L
View, i! FIG. 3 is a spectral absorption characteristic diagram of a selective absorber according to one embodiment of the present invention, and FIG. 4 is an enlarged perspective view showing a selective absorber according to another embodiment of the present invention. FIG. 5 is an enlarged perspective view showing a selective absorbent body according to another embodiment of the present invention. (11...Transparent cover, C21...Mesh plate (electrically conductive thin plate), +31...Solar light absorber, (4)
... Container, (5) ... Black fluid, (6) ... Dielectric plate. In Figure 1, the same reference numerals indicate the same or corresponding parts. Agent Kuzuno Nobu - Ki (instead?chi L half 2 evil*J @ (toge enters 1・νku income rate 4- to ¥-5a shaku P%L

Claims (1)

【特許請求の範囲】 (11規則的に配列された貫通孔を有する電気導伝性薄
板を太陽光吸収率の大きな吸収体の前面に配置してなる
太陽熱コレクタ用選択吸収体。 (2)  電気導伝性薄板において0貫通孔の周期p)
を30On!Elから80 Onllの範囲となし、ま
たその線幅(d)を周期て除した値(d/D)をrL2
0から0.25の範囲となしたことを特徴とする特許 レクタ用選択吸収体。 (3)  規則的に配列された貫通孔を有する電気導伝
性薄板を太陽光反射率の小さな面およびその面下に充填
された太陽光吸収率の大きな黒色流体とから構成された
吸収体の前面に配置してなる太陽熱コレクタ用選択吸収
体。 (4)  電気導伝性薄板κおいて,貫通孔の周期(1
)》を300nmからIOonllの範囲となし.また
その線幅((1)を周期で除した値(a/p)を0.2
0からa.25 の範囲となしたζとを特徴とする上記
特許請求の範FIBJI3項に記載の太陽熱コレクタ用
選択吸収体。 (5) 規則的に配列された貫通孔を有する電気導伝性
薄層を太陽光透過率の大きな誘電体薄板上に形成したも
のを太陽光吸収率の大きな吸収体の前面に配置してなる
太陽熱コレクタ用選択吸収体。 (6)  電気導伝性薄板または薄層において.貫通孔
の周期p》を300nllからIOOnmの範囲となし
.また七のIIm ((1)を周期で除した値((1/
D)を(L20から125の範isトなシタコとを特徴
とする上記特許請求の範囲aI5項に記載の太陽熱コレ
クタ用選択吸収体。
[Scope of Claims] (11) A selective absorber for a solar collector, comprising an electrically conductive thin plate having regularly arranged through holes arranged in front of an absorber with a high solar absorption rate. (2) Electricity Period p) of 0 through holes in a conductive thin plate
30On! The range is from El to 80 Onll, and the value (d/D) obtained by dividing the line width (d) by the period is rL2
A selective absorber for a patented rector, characterized in that the absorption range is from 0 to 0.25. (3) An absorber consisting of an electrically conductive thin plate with regularly arranged through holes, a surface with low solar reflectance, and a black fluid with high solar absorption filled under the surface. Selective absorber for solar heat collector placed on the front. (4) In the electrically conductive thin plate κ, the period of the through holes (1
)> in the range from 300nm to IOonll. Also, the line width ((1) divided by the period (a/p) is 0.2
0 to a. The selective absorber for a solar collector according to claim 3, characterized in that ζ is in the range of 25. (5) An electrically conductive thin layer with regularly arranged through holes formed on a dielectric thin plate with high solar transmittance is placed in front of an absorber with high solar absorption. Selective absorber for solar collectors. (6) In an electrically conductive thin plate or layer. The period p of the through holes was set in the range of 300nll to IOOnm. Also, seven IIm ((1) divided by the period ((1/
D) The selective absorber for a solar collector as set forth in claim aI5, characterized in that it has a (L20 to 125) range.
JP57043130A 1982-03-18 1982-03-18 Selective absorber for solar heat collector Granted JPS58160765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57043130A JPS58160765A (en) 1982-03-18 1982-03-18 Selective absorber for solar heat collector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57043130A JPS58160765A (en) 1982-03-18 1982-03-18 Selective absorber for solar heat collector

Publications (2)

Publication Number Publication Date
JPS58160765A true JPS58160765A (en) 1983-09-24
JPH0432301B2 JPH0432301B2 (en) 1992-05-28

Family

ID=12655257

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57043130A Granted JPS58160765A (en) 1982-03-18 1982-03-18 Selective absorber for solar heat collector

Country Status (1)

Country Link
JP (1) JPS58160765A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150285532A1 (en) * 2012-10-26 2015-10-08 Kabushiki Kaisha Toyota Jidoshokki Heat conversion member and heat conversion laminate
US11037733B2 (en) * 2018-10-11 2021-06-15 Samsung Electro-Mechanics Co., Ltd. Multilayer ceramic capacitor having dummy pattern

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150285532A1 (en) * 2012-10-26 2015-10-08 Kabushiki Kaisha Toyota Jidoshokki Heat conversion member and heat conversion laminate
US11037733B2 (en) * 2018-10-11 2021-06-15 Samsung Electro-Mechanics Co., Ltd. Multilayer ceramic capacitor having dummy pattern

Also Published As

Publication number Publication date
JPH0432301B2 (en) 1992-05-28

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