JPS58160263U - GD-CVD equipment - Google Patents

GD-CVD equipment

Info

Publication number
JPS58160263U
JPS58160263U JP5788482U JP5788482U JPS58160263U JP S58160263 U JPS58160263 U JP S58160263U JP 5788482 U JP5788482 U JP 5788482U JP 5788482 U JP5788482 U JP 5788482U JP S58160263 U JPS58160263 U JP S58160263U
Authority
JP
Japan
Prior art keywords
cvd equipment
grid electrode
electrodes
cvd
distance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5788482U
Other languages
Japanese (ja)
Inventor
江原　「じよう」
今田　英治
松山　外志郎
小島　義己
Original Assignee
シャープ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by シャープ株式会社 filed Critical シャープ株式会社
Priority to JP5788482U priority Critical patent/JPS58160263U/en
Publication of JPS58160263U publication Critical patent/JPS58160263U/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来装置の概要を示す図、第２図は本考案によ
る実施例を示す概要図である。 １：反応室、２：陰極、３：陽極、４：基板、５ニゲリ
ツド電極。FIG. 1 is a diagram showing an outline of a conventional device, and FIG. 2 is a diagram showing an outline of an embodiment according to the present invention. 1: Reaction chamber, 2: Cathode, 3: Anode, 4: Substrate, 5 Niger electrode.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] プラズマを発生するための容量結合型ＣＤ−ＣＶＤ装置
において、相対する電極間に、電極間に配置される基板
に対して間隔を隔ててグリッド電極を設け、該グリッド
電極に所望電位を与えてなることを特徴とするＧＤ−Ｃ
ＶＤ装置。In a capacitively coupled CD-CVD device for generating plasma, a grid electrode is provided between opposing electrodes at a distance from a substrate disposed between the electrodes, and a desired potential is applied to the grid electrode. GD-C characterized by
VD device.
JP5788482U 1982-04-20 1982-04-20 GD-CVD equipment Pending JPS58160263U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5788482U JPS58160263U (en) 1982-04-20 1982-04-20 GD-CVD equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5788482U JPS58160263U (en) 1982-04-20 1982-04-20 GD-CVD equipment

Publications (1)

Publication Number Publication Date
JPS58160263U true JPS58160263U (en) 1983-10-25

Family

ID=30068307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5788482U Pending JPS58160263U (en) 1982-04-20 1982-04-20 GD-CVD equipment

Country Status (1)

Country Link
JP (1) JPS58160263U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62111435A (en) * 1985-07-15 1987-05-22 Hitachi Ltd Method and device for film formation by low-temperature plasma

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62111435A (en) * 1985-07-15 1987-05-22 Hitachi Ltd Method and device for film formation by low-temperature plasma

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