JPS58159520A - Liquid crystal display panel - Google Patents

Liquid crystal display panel

Info

Publication number
JPS58159520A
JPS58159520A JP57043226A JP4322682A JPS58159520A JP S58159520 A JPS58159520 A JP S58159520A JP 57043226 A JP57043226 A JP 57043226A JP 4322682 A JP4322682 A JP 4322682A JP S58159520 A JPS58159520 A JP S58159520A
Authority
JP
Japan
Prior art keywords
crystal display
transistor
panel
display panel
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57043226A
Other languages
Japanese (ja)
Other versions
JPH0352611B2 (en
Inventor
Toshiaki Ogata
尾形　俊昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP57043226A priority Critical patent/JPS58159520A/en
Publication of JPS58159520A publication Critical patent/JPS58159520A/en
Publication of JPH0352611B2 publication Critical patent/JPH0352611B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix

Landscapes

  • Physics & Mathematics (AREA)
  • Liquid Crystal (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)

Abstract

PURPOSE:To enable the illumination of a liq. crystal display panel having a switching transistor array from the rear side and to enhance the display performance, by laminating insulating films in the vicinity of the transistor of the panel. CONSTITUTION:A liq. crystal display panel is composed of a panel substrate 1, a transistor 2, light shielding films 3, 4 made of metal or metallic silicide, insulating films 5, 6 formed by the plasma deposition of gaseous hydrocarbon and having a higher refractive index, insulating films 7-10 of silicon oxide having a lower refractive index, and a transparent electrode 11. Light incident on the substrate 1 at a large angle is captured in the films 5, 6 by total reflection, and it does not reach the transistor 2. Accordingly, the panel can be illuminated from the rear side, and the display performance is enhanced.

Description

【発明の詳細な説明】 本発明はスイッチングトランジスタアレイを有する液晶
表示パネルのＰ縁嗅の構造に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a P-edge structure of a liquid crystal display panel having a switching transistor array.

スイッチングトランジスタアレイを有する液晶表示パネ
ルはグラフィック表示が可能であり、小型の表示装置を
作り得る事から携帯用機器の表示装置として大いに注目
これている。しかし従来から表示装置として使用されて
いるｃＲＴ弄示と比較すると、表示性能が劣り、性能の
向上にはパネル裏面からの照明が必要であるが、従来の
スイッチングトランジスタアレイを有する液晶表示パネ
ルでは照明光によってトランジスタのリーク電流が大巾
に増加し、キャパシタに蓄積された電荷の消失によって
表示機卵が不卵となる。本発明は上記の欠点を除去り、
、７１面からの照明を可能とする事によって液晶表示パ
ネルの性能を向上させる事を目的とする。A liquid crystal display panel having a switching transistor array is capable of displaying graphics and is attracting a lot of attention as a display device for portable equipment because it can be made into a small display device. However, compared to cRT display, which has been conventionally used as a display device, the display performance is inferior, and to improve performance it is necessary to illuminate from the back of the panel. The leakage current of the transistor increases significantly due to the light, and the charge accumulated in the capacitor disappears, causing the display device to become infertile. The present invention eliminates the above drawbacks and
The purpose of this invention is to improve the performance of liquid crystal display panels by enabling illumination from 71 sides.

以下実施例によって詳しく説明する。本発明の液晶表示
パネルはトランジスタの上下に遮光膜を設］、さらに遮
光膜とトランジスタの間の絶縁膜を屈折率の異なる膜を
積層して形成する事によって照明光及び外光がトランジ
スタに与える影響を無くす物である。第１図に本発明の
液晶表示パネルの部分断面図を示す。パネル基板１士に
形成染れるトランジスタ２け絶縁膜を介して金属もしく
は金属硅化物からなる遮光膜３．４によって上下を覆わ
れる。遮光膜３．４によって大部分の照明光及び外光は
遮断されるが一部の光が遮光膜間の絶縁膜を通してトラ
ンジスタに到達し、ｌ・ランクスタのり〜りの原因とな
る。本発明では上月ｅの碑光膜の間隙から侵入する光を
全反射を利用する事によりトランジスタへの到達を防止
する。屈折率の大といＰ縁膜、例えばダイアモンド膜５
．６を卵折率の小さい酸化シリコ７［７，Ｒ，９，１０
の中間層として形成する事により、パネル基板に対して
大縫い入射角で侵入する光はダイアモンド膜中に全反射
塑象により１補気られ、トランジスタに到達し得ない。This will be explained in detail below using examples. In the liquid crystal display panel of the present invention, light shielding films are provided above and below the transistor], and the insulating film between the light shielding film and the transistor is formed by stacking films with different refractive indexes, so that illumination light and external light are applied to the transistor. It is something that eliminates the influence. FIG. 1 shows a partial sectional view of a liquid crystal display panel of the present invention. The upper and lower sides are covered with light-shielding films 3.4 made of metal or metal silicide via two transistor insulating films formed on each panel substrate. Although most of the illumination light and external light are blocked by the light-shielding film 3.4, some light reaches the transistor through the insulating film between the light-shielding films, causing l-rank star leakage. In the present invention, total internal reflection is used to prevent light entering from the gap between the light films of the upper moon e from reaching the transistor. A P film with a large refractive index, such as a diamond film 5
．． 6 to silicon oxide 7 [7, R, 9, 10
By forming the diamond film as an intermediate layer, light that enters the panel substrate at a large angle of incidence is reflected by total reflection in the diamond film and cannot reach the transistor.

ダイアモンド膜は減圧り相成長法もしくけプラズマ法に
よって炭什水素ガヌより形成ζわる。＋Ｍｒ’の層状に
形成これる屈折率の異なる絶縁膜は少なくともトランジ
スタの近傍に形成ばれるが、全面に形成しても支障ない
。透明Ｗ極１１士の絶縁膜は重加電流をカットする膜と
して作用する。The diamond film is formed from hydrocarbons using a reduced pressure phase growth method or a forced plasma method. The +Mr' layered insulating films having different refractive indexes are formed at least in the vicinity of the transistors, but there is no problem in forming them over the entire surface. The insulating film of the transparent W poles 11 acts as a film that cuts the weighted current.

以−ト述べた様に本発明の液晶表示パネルは照明光及び
外光に影響されない為に表示性能が大いに向上し、携帯
用機器の表示装置として広範な使用が期待でとる。As mentioned above, since the liquid crystal display panel of the present invention is not affected by illumination light or external light, its display performance is greatly improved, and it is expected to be widely used as a display device for portable equipment.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の液晶表示パネルの部分断面図である。 １・・パネル基板 ２・・トランジスタ ３．４・・遮光膜 ５．６・・屈折率の大νい絶縁膜 ７．８，９．１０・・屈折率の小ζい絶縁膜１１・・透
明電極 以　　上 出願人　株式会社　諏訪精工舎FIG. 1 is a partial sectional view of a liquid crystal display panel of the present invention. 1... Panel substrate 2... Transistor 3.4... Light shielding film 5.6... Insulating film with large refractive index 7.8, 9.10... Insulating film with small refractive index 11... Transparent Electrodes and above Applicant: Suwa Seikosha Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] スイッチングトランジスタアレイを有する液晶表示パネ
ルにおいて、少なくともトランジスタの近傍に屈折率の
異なる絶縁膜が積層して形成された事を特徴とする液晶
表示パネル。1. A liquid crystal display panel having a switching transistor array, characterized in that insulating films having different refractive indexes are stacked and formed at least in the vicinity of the transistors.
JP57043226A 1982-03-18 1982-03-18 Liquid crystal display panel Granted JPS58159520A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57043226A JPS58159520A (en) 1982-03-18 1982-03-18 Liquid crystal display panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57043226A JPS58159520A (en) 1982-03-18 1982-03-18 Liquid crystal display panel

Publications (2)

Publication Number Publication Date
JPS58159520A true JPS58159520A (en) 1983-09-21
JPH0352611B2 JPH0352611B2 (en) 1991-08-12

Family

ID=12657994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57043226A Granted JPS58159520A (en) 1982-03-18 1982-03-18 Liquid crystal display panel

Country Status (1)

Country Link
JP (1) JPS58159520A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0179914A1 (en) * 1984-04-09 1986-05-07 Hosiden Corporation Liquid crystal display element and a method of producing the same
EP0179915A1 (en) * 1984-04-11 1986-05-07 Hosiden Corporation Liquid crystal display element and a method of producing the same
EP0271313A2 (en) * 1986-12-08 1988-06-15 Sharp Kabushiki Kaisha Liquid crystal display device
JPH01222227A (en) * 1988-03-01 1989-09-05 Matsushita Electron Corp Image displaying device
EP0375268A2 (en) * 1988-12-21 1990-06-27 International Business Machines Corporation Liquid crystal display device
JP2005181422A (en) * 2003-12-16 2005-07-07 Nec Corp Light emission type display device and its manufacturing method
EP1617282A3 (en) * 1995-09-27 2006-01-25 Sharp Kabushiki Kaisha Active matrix substrate and display device incorporating the same
KR100773872B1 (en) * 1998-10-28 2007-11-06 소니 가부시끼 가이샤 Liquid crystal display device
JP2008225144A (en) * 2007-03-14 2008-09-25 Seiko Epson Corp Electrooptical device and electronic device
US7508033B2 (en) 1998-04-24 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with diamond-like carbon film on backside of substrate
CN102645799A (en) * 2011-03-29 2012-08-22 京东方科技集团股份有限公司 Liquid crystal display device, array substrate and color-film substrate as well as manufacturing methods thereof
JP2020531897A (en) * 2017-08-22 2020-11-05 深▲せん▼市華星光電技術有限公司Ｓｈｅｎｚｈｅｎ Ｃｈｉｎａ Ｓｔａｒ Ｏｐｔｏｅｌｅｃｔｒｏｎｉｃｓ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．， Ｌｔｄ． Liquid crystal display

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0179914A1 (en) * 1984-04-09 1986-05-07 Hosiden Corporation Liquid crystal display element and a method of producing the same
EP0179915A1 (en) * 1984-04-11 1986-05-07 Hosiden Corporation Liquid crystal display element and a method of producing the same
EP0271313A2 (en) * 1986-12-08 1988-06-15 Sharp Kabushiki Kaisha Liquid crystal display device
JPH01222227A (en) * 1988-03-01 1989-09-05 Matsushita Electron Corp Image displaying device
EP0375268A2 (en) * 1988-12-21 1990-06-27 International Business Machines Corporation Liquid crystal display device
US5121237A (en) * 1988-12-21 1992-06-09 International Business Machines Corporation Liquid crystal display device and method of manufacture
EP2073056A1 (en) * 1995-09-27 2009-06-24 Sharp Kabushiki Kaisha Active matrix substrate and display device incorporating the same
EP1617282A3 (en) * 1995-09-27 2006-01-25 Sharp Kabushiki Kaisha Active matrix substrate and display device incorporating the same
US7508033B2 (en) 1998-04-24 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with diamond-like carbon film on backside of substrate
KR100773872B1 (en) * 1998-10-28 2007-11-06 소니 가부시끼 가이샤 Liquid crystal display device
JP2005181422A (en) * 2003-12-16 2005-07-07 Nec Corp Light emission type display device and its manufacturing method
JP4736013B2 (en) * 2003-12-16 2011-07-27 日本電気株式会社 Method for manufacturing light-emitting display device
JP2008225144A (en) * 2007-03-14 2008-09-25 Seiko Epson Corp Electrooptical device and electronic device
CN102645799A (en) * 2011-03-29 2012-08-22 京东方科技集团股份有限公司 Liquid crystal display device, array substrate and color-film substrate as well as manufacturing methods thereof
US9036106B2 (en) 2011-03-29 2015-05-19 Boe Technology Group Co., Ltd. Liquid crystal display device in which array substrate includes black matrix and method of manufacturing the same
JP2020531897A (en) * 2017-08-22 2020-11-05 深▲せん▼市華星光電技術有限公司Ｓｈｅｎｚｈｅｎ Ｃｈｉｎａ Ｓｔａｒ Ｏｐｔｏｅｌｅｃｔｒｏｎｉｃｓ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．， Ｌｔｄ． Liquid crystal display

Also Published As

Publication number Publication date
JPH0352611B2 (en) 1991-08-12

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