JPS58154274A - Multilayer photocell - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the conversion of solar energy to electrical energy, and more particularly to multilayer photovoltaic cells (photoportic cells) for such conversion.

Several forms of photovoltaic cells have been developed to convert solar energy into electrical energy. However, the efficiency of known systems is low (even if the efficiency is improved by the use of more efficient converters, the cost of the converter is high; an optical system is used to transfer solar energy onto the converter). It has been proposed that the conversion efficiency can be improved by focusing the light.

It is possible to set the conversion efficiency to 8. From a consideration of the prices of each of the several parts of the conversion system,
Although the use of a concentrator results in the use of a more expensive optoelectronic converter*i, it is shown that there is an economic price limit to the concentrator system.

Additionally, the more intense the light is focused on the converter, the more heat generated by the focused light must be dissipated, since the efficiency of some types of converters is This is because it decreases as the value increases.

Considering the above issues, the issue can be shifted from converter battery cost to battery efficiency by using a condensing system that can reduce the cost of energy conversion by increasing conversion efficiency. Therefore, if the cell efficiency is sufficiently increased, the condensing system can generate electricity more cheaply than the same low-cost array.

These considerations provide the basis for a highly efficient stacked multi-connection solar cell in which each cell responds to a different energy source of solar energy and has a concentrator that collects the energy and directs the cells to the energy source.

Multi-element batteries have been proposed as a means of converting solar energy into electrical energy. One form of such a cell is described in U.S. Patent Application No. 4,017,532, filed April 12, 1977, by Vi, 36m8B. This patent suggests a multilayer cell consisting of a stack of heterojunction cells. In contrast to the James invention, the present invention is directed to multilayer photovoltaic cells consisting of a stack of homojunction cells.

Prior art multilayer photovoltaic cells suggest forming successive shields of semiconductor materials corresponding to different energy bands. Patent No. 4 by L, W, :rames
．． Please take a look at issue 017.552. The cell described in this invention is chosen to respond to different band ears at the same current level, explicitly avoiding band ears for source energies affected by fluctuations in the mass of water vapor and air.

Prior art multilayer photovoltaic cells are formed on a substrate material that is lattice-matched to one semiconductor layer and are formed using separate junctions to contribute to the overall performance of the substrate, such as seven layers. There is. About that, W. James
No. 4.017.532. In the cell described in the application of the present invention, fluctuations in infrared absorption in the solar spectrum caused by the OH movement breadth that is spatially lattice matched to the semiconductor layer and associated with water vapor.
Relatively inexpensive substrates have been proposed that are designed without internal junctions so that the #L pond has no sensitivity.

In a presentation of the prior art at the 13th IBHH Former Electromotive Sword Experts Meeting-1978, June 5-8, 1978, Washington, D.C., by the present inventor and R.C. Multi-storey ft#L
A pond is described. The photovoltaic cells described in the application of the invention are formed in a layer tt having no distinct junctions in the substrate and having homojunctions that are lattice matched to the substrate and generate the desired electrical f: mourning with the desired efficiency. It differs from the prior art by this.

The idea of obtaining very high energy conversion efficiencies by optically stacked solar cells with different types of solar cells is known. There is an increasing demand for integrally manufacturing the horizontal □゛, . . . layers of such a single solar cell on a single wafer. This provides space applications. This is because a single wafer is lighter than a stack of I1 wafers. In addition, low-efficiency wafers are less expensive than multiple wafer stacks, and can be simply and easily cooled, allowing for terrestrial applications using light collection systems. However, there are major constraints on the design and manufacture of these highly efficient integrated stacked multi-junction solar cells. Two design constraints are firstly that the different semiconductor materials forming the stack are nearly lattice matched, thus preserving crystalline integrity, and that when a unitary responsive device is connected in series with @2, The second species of the genus is that the rs tortoise currents are distributed approximately equally between multiple junctions. colorary
) It is possible to obtain a rare series connection of the @-type junction without suffering any voltage loss that cannot be caused by an inactive image layer in the layered structure having -&X*.

As described above, a multi-layered layer t1f of indium gallium phosphide and indium gallium arsenide 1 on a rumanium substrate is used. Successive layers have junctions of different absorption bands, while the substrate and subsequent layers are lattice matched to less than ±1 inch. * Using ti, solar energy is transferred from the pond electrode to electrician j1
This provides an effective means of converting to #.

The main objective of the present invention is to obtain a highly efficient multi-junction photovoltaic cell for converting solar energy into electrical energy.

Another object of the present invention is to provide a multilayer base pond that can be made from useful materials.

Other objects and features of the present invention will be readily apparent to those skilled in the art from the accompanying description and description of preferred embodiments.

＃3 songs are displayed.

Dopant = Semiconductor is IIt by carrier with positive or negative it charge
Continuing the flow. Such carriers are applied to the semiconductor using a dosage of chemical impurities called dopants. When a dopant applies a negative charge carrier to a semiconductor, the semiconductor is called n-type doped.

Highest grade in semiconductors! If the semiconductor is doped with a strongly negative charge, thereby making the semiconductor semimetallic, it is doped to n+.

Similarly, high II positive charge carriers dope the semiconductor to P+. Dopants differ from the main chemical components that form semiconductors in the following ways: That is, the dopant has an atomic composition of "t-1%"
and apply charge carriers to the semiconductor.

Junction: A junction in a semiconductor device is a half-plane region in which the carrier is positive on one side and the carrier is negative on the other side.

Homo Wk level: A homojunction is a junction in which the semiconductor material on both sides of the m level is the same or homogeneous. In other words, the chemical difference between the two sides of the filler is the choice of dopant present in the mirror amount. The main chemical components that form the semiconductor on both sides of the junction are the same.

Hetero mating: Hetero mating is a true mating in which the half-body material on both sides of the joint is not the main composition of the carrier type. The chemical composition on both sides of the joint is J! It is prize-like. In other words, a semiconductor with a positive carrier is substantially chemically different from a semiconductor with a negative carrier. Often, when forming a heterojunction, substantial maturation occurs and changes in the type of carrier do not occur strictly at the dissimilar interface. However, such a junction is still referred to as a heterojunction.

Band Earth Energy: A semiconductor absorbs elements with photon energy above a certain energy and transmits elements with photon energy lower than that energy.

The energy at which absorption begins is called the semiconductor band energy. This panty energy changes due to changes in the chemical composition of the early number.

Lattice matching: Atoms in a crystal are separated by spacing and relative angle plates. The locations where atoms are found shape the crystal lattice. In some cases, when going from one material to another, it is possible to change the atoms without changing the crystal lattice much. For example, A
jAa crystal has the same crystal lattice as GaA3 crystal. M atoms can be simply replaced with Ga atoms. If two crystals have the same lattice and the atomic spacing is equal, there is a good lattice match.

One crystal can be grown as an extension of the other.

3 FIG. 1 is a schematic cross-sectional view of a multilayer photovoltaic solar cell of the present invention. The layers of the cell are not strictly dimensional in either the vertical or horizontal direction except where layers are indicated by their relative thicknesses. As shown in the figure, at 5, the dermanium-based structure has an electrically conductive surface 12 on its 10,000 side and is joined to a first semiconductor cell 13 on the other side. A quasicrystal is suitable for the r rumanium group &LllT? J! , or Ga01111no, 12A8 that responds to near-infrared light region.
A single-element substrate having a crystal structure that can be lattice-matched to the oxalteric material is preferred. The substrate did not contain a photosensitive junction and was intentionally grown as a delmanium crystal. This is because of the unique lattice structure in the first layer of the multilayer I-cell that allows photogenerated current to be generated in a region that can be distributed between the other layers of the multilayer cell.

In the battery 13, gallium, indium and arsenic are Ga□1
gBIn0.14A8 and has a composition of 1,25 eV
17) It is preferable to configure the device to have an energy band gear. Bond 14 is shown in first layer 13'. The first battery 13 is a grid on the board! 1 meeting, suitable 1.
It is possible to absorb visible or near-infrared light with a photon energy of 225 eV or more and generate a current corresponding to the desired distribution in the multilayer cell.

@2's &a15+z first *a131C tangent Ml is shown. The battery 15 has a composition of GaO, 1", 6?P, and is made of gallium, indium, ?, and shunt, which is loaded with a 1.75 AV energy pump. The battery 15 in @2 is the first It can absorb visible or near-infrared light having a photon energy of preferably 1.75 eV or more, and can generate a current corresponding to the desired distribution of S in the multilayer battery.

Several layers of transparent conductive layers 16 of indium tin oxide or antimony tin oxide are formed on the other surface of the second battery 15.

The compositions of indium tin oxide R and antimony tin oxide are a mixture of the two oxides.

That is, the first composition includes indium oxide (In2O,) tin oxide (8n(12)), and the second composition includes antiseptane oxide < sbo, ) and tin oxide. Their mixing tubes can be mixed with any ratio of the two oxides, typically 80 to 90 mole percent indium oxide in the first composition and 10 to 6 antimony oxide in the second composition.
0 mole percent. Their composition is expedient earthwork nt
It is represented by the chemical formula: aor</5no2 or 8nO/sbo.

11v4 or higher m&17 outside layer 16 @t
Installed in the R direction. Electrical conductors -18 and 19 are attached to wL poles 12 and 17, respectively. The transparent anti-reflection outer surface WL coating 20 covers the surface layer 16 and the electrode 1.
Applied on T.

As shown in FIG.
1 is placed at the top of the battery in the position where it collects the source from party 22, shown here as the sun. Figure 2 shows three layers 31.32
．． 33 indicates a similar multilayer cell incorporated between the substrate 11 and the conductive layer 16. The composition of those 31m in a preferred form is that layer 31 is 04o, B of 1.25 ev.
BIno, 12 As, Iso 32 is band eartub 1
．． 508V “0.611”no, 3, AJo, 3P0
．． 5 and layer 33 is In with a band ear of 1.85 eV.
0.150a0. It is SP.

In the multilayer battery shown in Figure 2, the substrate is 35L6.8! lI
Single-crystal, single-element germanium, which has a lattice structure that can be lattice-matched to n+) and 111As but does not include a junction and therefore does not respond to photons incident on or passing through the substrate, is preferred. The lattice structure of the rumanium substrate allows the desired crystal lattice structure to span the three-layer cell and allows the desired photovoltaic (current) to be distributed substantially equally between the multiple junctions, allowing for series connection. Therefore, it is particularly suitable for constructing a three-layer battery having the above composition.

The layers are preferably deposited by a metal organic chemical vapor deposition process in a manner that establishes the desired thickness and composition on the substrate 11.

The pressure junction battery shown in Figure 2 has a lower solar energy conversion efficiency than the two-layered battery shown in Figure 1. It has high efficiency, while double layer battery is 1000auns
It has a theoretical efficiency of 44 excellent.

A pressure bond cell is similar to the cell of FIG. 1, except that the compositions of the second bond layer 32 and the third bond layer 33 are not obvious. Those pigeons are In, Ga.

Al, P are selected so that the same metal-organic chemical vapor deposition system can be used in the process steps to prepare either the device of FIG. 1 or the device of FIG. The compositions are uniquely chosen such that lattice matching within one inch is observed in all three layers. However, due to the position of the band ear determined by the composition, the efficiency of the three-layer cell is reduced by about 10 degrees, since the equal vL flow is unobservable.

Composition of No. 271*32 in FIG. 2, i.e. oao, 69I
nO,f(iA510.l5PO,I5 is not obtained by deforming any of the layers in Figure 1; therefore, it is not obvious from the cell in Figure 1. This composition is similar to that of the InGaAsP quaternary mineral system. The band ear and crystal lattice spacing data as well as the crystal lattice spacing data are obtained from the discussion of solar cell current conditions discussed above.

Suitable multilayer batteries constituting the two- or three-layer battery of the present invention
For example, starting from a single crystal substrate such as a dalmanium wafer. Jf rumanium wafer substrates do not contain photoresponsive junctions than the following. First, a pure Fjtk1 of dalmanium wafer with functional original response junction
This is because substrates with junctions are more expensive to fabricate since wafers without junctions vh on the order of 1 ppm or less require purity control of only 1000 ppm or less. In the broom 2, this is because the Mk group in the dalmanium wafer responds to the light of the band ear, which is most sensitively affected by humidity and fluctuations in the air quality. r
Another advantage of rumanium substrates is that dermanium, like silicon, is a high-density semiconductor and can be grown in the form of a thin film, thereby contributing to a low working capacity.

Furthermore, dermanium is lattice within the above mentioned layers '13 and 15 or 31.32 and 33 & C1! 1, thus allowing the efficiency of the cell proposed here to approach the theoretical limit more closely.

The preferred form of the cell described herein is such that the thickness of the rumanium layer on the substrate is between 200 and 600 microns, preferably 250 microns. The lower limit of stiffness is determined by both the operating conditions that establish the conductive properties of the substrate and the physical characteristics of the substrate in its role as the base of a multilayer cell. The upper limit on substrate size is due to the fact that substrates are more expensive to make and contain more layers of expensive materials.

We propose a growth method that enables the continuous deposition of ■-■ alloy layers on large substrate areas. This type of layered beam, M, Pra
As, et al., U.S. Pat. No. 4,128,735, filed December 5, 1978, is well known. FIG. 6 shows a growth chamber for this method, called low pressure metallurgical chemical vapor deposition (MO-CVD).

In this method, 6 alkyl gallium% 6 alkyl indium or a mixture thereof and phosphine, arsine or a mixture thereof are introduced into a thermal decomposition chamber VCC. These adducts react on the Delmanium substrate and the necessary In
()aAa or InGaP base metal is Ga (1-x
) I nxA8+auxiliary children, where X is 0 and 1
has a value between .

The product is a semiconductor thin film deposited on a rumanium substrate.

The semiconductor is doped P-type by adding 2-alkylzinc, 2-alkylcadmium or 2-alkylberyllium 6-metelamine vapor and doped N-type by adding phosphoric acid X, 4-alkyltin or 2-alkyltellurium vapor. All ■−■ metal layers of defined composition are grown sequentially using a programmable gas flow controller.

In manufacturing the battery shown in Figure 1, by providing a heterofield mc short circuit tunnel junction, the lattice! ii: It is proposed to stack homolytic cells together. Starting from a rumanium substrate with a P-type dopant, the next layer of 1,' 1 pond? t”ao,!Ill”nO,12Aa”
p+ of gallium indium arsenide with a suitable alloy composition of
Formed by ten-shaped v epitaxial deposition. During the deposition process of this semiconductor layer, the dopant concentration is reduced to produce a P-type layer, and finally the dopant is changed to produce a P/n junction and then to a "Cn-type layer."
The Fj# of the layer increases and at the end position it is deposited with a dopant concentration such that a noodle is formed at the boundary of the first layer.

A second semiconductor layer is then epitaxially deposited on the outer surface of the eleventh layer with a dopant material and concentration that initially produces a P layer at the interface. The second semiconductor layer is Ino, δ
'FG'Q-4IP is an indium gallium phosphide material with a suitable alloy composition. During the deposition process of this semiconductor layer, the dopant)[1iY decreases to form a P-type layer, and finally the dopant is changed to P/ n junction is obtained nfM
Convert to +-. Continuous layering increases the thickness of @2 layers,
The dopant composition changes and n-raw noodles are generated at the boundary of the second layer.

Then an outer conductive layer, . The conductive layer is likewise provided with an antireflection coating. Conductivity is the alloy composition of indium tin oxide (In2O3/8n, conventionally abbreviated as ITO).
o2) Y: It is suitable to have.

To complete the photovoltaic cell, a pair of conductors is attached, one on each outer surface of the substrate and ITO layer.

In manufacturing the cell of FIG. 2, a substrate is produced as described for the cell of FIG. 1, and then "0.88In0
．． A first layer of lattice-matched composition of 1□A8 is then deposited axially. , 69 Engineering nO-31A80.
The second layer of l5PO, I5 is its Wk ”no, 8Ga
o, the sixth layer of lsP, and then the outer conductive layer without anti-reflection coating is applied. In this three-layer battery,
The composition of each layer is controlled to obtain the desired lattice matching.

At the same time, essentially the same zero-voltage photovoltaic current is generated, resulting in an efficient multi-walled photovoltaic solar cell.

It should be noted that each layer has a photoresponsive P/n homojunction V and each has seven lateral top and bottom layers with tunnel shorting heterojunctions. Furthermore, it has a tunnel junction at the heterointerface between the cells. Using this construction method, a more effective tunnel junction is obtained. Since the magnitude of the tunneling current passing through a barrier depends on the height as well as the width of the barrier, by providing it at a heterointerface such as a tunnel junction, it is possible to increase the barrier height to a lower height than that of a material with a heterointerface. is obtained.

In the multilayer photovoltaic cell described above, the first layer has a band ear of 1.25 ev and the second layer has a band ear of 1.75 sv.

In the homo-walled Confucian construction described here, the tunnel barrier height is 1
．． It is 25 eV.

In the preferred embodiment described herein, each deposited semiconductor layer has a thickness of 2 to 6 microns, with about 4 microns being preferred.

The high tope tunnel contact layer on the low band ear side for homojunction cells is thin enough so as not to absorb large amounts of material.
That is, it must be 100 DA or less. That criterion is not difficult to meet because the absorption length is longer in the slightly smaller region near the semiconductor band ear, which is an area of interest in multi-walled batteries. This layer is thick enough not to be depleted by the child, i.e. 1o.

Must be A or higher.

The configuration of the apparatus for depositing the layers of the photovoltaic cell of the present invention is shown in FIG. The apparatus is shown in schematic diagram form 1 for a pyrolytic chemical vapor deposition system. The system generally includes a chamber 61 confined within point -60. The chamber is evacuated by a bonder 62 to obtain a vacuum inside the chamber.

A substrate holding plate 63 is mounted indoors adjacent to the heating element 64. Electric power is supplied from a power source 65 to the heating element through the expanded fat 66. A thermocouple 6T senses the temperature inside the chamber 61.

Gaseous metal-organic material enters chamber 61 through inlet #I*6B.
supplied to The second inlet-path 69 is gaseous and hydrated.
(hydride) material is supplied to the display 61.

The various gases react at room temperature and pressure to deposit the desired semiconductor alloy composition with the desired type of dopant, producing the epitaxial growth of a photovoltaic cell with a lattice structure. The chemical vapor deposition process is described in US 13i1 Patent No. 4,128.733 and Jo
Urnal of Vacuum8cienca Te
Chnology.

@Volume 15, 41. 1978 1 Kare February issue 119-12
It is described on page 2.

After each layer of the multilayer photovoltaic cell is deposited, a transparent layer of conductive material is deposited. Transparent conductivity (F-σ) is the preferred form & indium tin oxide, but other fabrication materials such as antimony tin oxide (σ) may be used to make the layer conductive and reduce the source energy incident on the active layer of the cell. On the other hand, it can be attached as long as it satisfies the condition of being transparent.

The transparent conductive layer of the multilayer battery preferably has a thickness of 0.2 to 2.0 microns, most preferably about 1 bar.The lower limit for the thickness of the conductive layer is determined by the operating characteristics. , - 10,000 upper limit is based on the material quality and additional cost.

In a preferred form, transparent anti-reflective outer e, 1110 temporary side 20
is added above the conduction floor. This antireflection layer reduces losses due to reflection of source energy, thus increasing cell efficiency. The material to be brazed 'I#+ is selected from materials such as silicon oxide, tantalum oxide, and titanium monooxide (σ).

Each layer of a multilayer battery is chair-matched to its neighbors () - ±1.0 cm (σ) with a maximum lattice constant variation. This σ) luxury is important. This is because the crystallinity of the battery system decreases when the lattice is unaligned, forming a structure with island density crystal dislocations, and in the worst case, even forming grain boundaries. The dislocations provide recombination sites for photogenerated charge carriers, thus reducing the amount of current generated.These dislocations generate short circuit currents that further reduce the open circuit voltage.

Lattice matching is achieved by appropriate selection of composition and relative amounts of materials in the different layers. A growth method with special control of temperature is important to form high-quality, single-crystal layers.

The preferred multilayer cells deposited on derma substrates all conform to the derma lattice constant of 5.66 A to within ±1.0.

In the current vs. voltage curve of FIG. 6, the performance of several different photovoltaic cells is shown. The curve shows at one end the maximum voltage produced at substantially zero current and at the other end the maximum current produced at substantially zero voltage or one short circuit" condition. The preferred operation of a single cell, designated as cell A, is at maximum The power point or point 43 is the location along the performance curve where the current 1141 and voltage line 42 are at a maximum.

The multilayer cells described herein require that the currents generated by each separation layer be substantially equal due to the series interconnections. This condition requires that the optimal design of a multi-junction battery with maximum displacement requires that the batteries in the stack generate substantially the same short circuit current. FIG. 6 illustrates this point by showing the performance curves for batteries A, B, and C.

From the foregoing, it can be seen that a multilayer cell having a battery with performance curve 1 and a battery with performance curve Bg operates at the current level at the point 44 where the two curves intersect in series addition. From a similar point of view, batteries with curves B and CY have the highest efficiency at point 45 at the current level where curves have the same current.

In this figure, the multi-junction battery made up of cells B and C has higher performance than the cell made up of cells A and B. [Reference: 8o1ar energy, Vol. 22, p. 686,
1979] Figure 4 shows the limits of increasing the number of cells in multilayer batteries in an effort to increase efficiency. “16th IEEE Battery Conference-1978” A., Bennett, L.

It is stated on page 868 by 01sq= that a multilayer battery with 6 active junctions exhibits a maximum efficiency of about 60 coefficients for 10005 ns.

For a multilayer battery constructed according to the invention, one
1,813V of nGaP and the other is 1 of GaInA3
．． A multilayer structure with two junctions at 2 eV has a theoretical efficiency Va of about 40 t, and Ge, 'GaInAs and In
Since the GaP layer is lattice matched within 1 s, it can be expected that the practical efficiency will approach the theoretical limit.

Figure 5 is a curve for the solar spectral table irradiation [8 wavelengths and element energy], and shows the solar spectral region that includes wavelengths in the infrared region from the visible. In the photovoltaic cells of the present invention, each cell is preferably operated at a wavelength in the solar spectrum where maximum energy is available. The wavelength spectrum of the sun ranges from about 0.6 to 2.51 Cron and about 0.4
It has a maximum value at 5 tchrons. The photon energy of sunlight is 4.0...:'. It has a large energy of 2.5eVKi over 0.65 ev. The curve in Figure 5 shows that the sun is in the sky for 1 mass of air)
It shows the spectral incident amount when kK is given.

The elements used in the ridged layers of FIGS. 1 and 2 are all found in groups IiA and VA of the periodic table and are preferably used in accordance with the present invention.

However, other semiconductor materials can also be used in accordance with the invention as defined in the accompanying claims. For example, Cd8
Compounds of elements in groups nB and VIA, such as and CdTe, can also be used. Similarly, IB-11IA-VIA compounds such as CuIn8 have 8 instead of 8.
Variations thereof using GaY instead of 8 or tXIn are also possible. Similarly, 11B-■A like Zn8nP
-■A compound is also possible. To a colleague.

Other mA-■A @ products are also the most suitable 111A mentioned above.
-Can be used in place of VA compounds.

While certain preferred embodiments of the invention have been described above, it is not intended that the invention be limited thereto (many variations are readily apparent to Vodong, and the invention is not intended to be construed as exhaustive). The widest possible scale within the scope of the claims.

It will be understood that an explanation must be obtained.

[Brief explanation of drawings]

@Figure 1 is a two-junction battery according to the present invention, and Figure 2 is a three-junction battery according to the present invention. Figure 3 shows current versus voltage for several photovoltaic cells; Figure 4 shows solar cell efficiency versus number of stacked cells. Figure 5 shows the solar spectral irradiance versus wavelength and photon energy, and Figure 6 shows a schematic diagram of a growth chamber for manufacturing photovoltaic cells of the invention. surface 13
...Semiconductor battery 17...Electrode 20...Transparent anti-reflection outer surface coating Agent Asamura Kogai 4 persons Procedural amendment (Jiji) April 30, 1981 To the Commissioner of the Japan Patent Office 1, of the case Indication Patent Application No. 55991 of 1981 3, Relationship with the amended party case Patent applicant Address Name Chevron Research Company (
Name) 4. Agent 5, date of amendment order, month, day, 6, 1939, claim No. 8 of the scattered patent claim of the invention increased by supplementary IF, Qζ14 to 7.10 as a new patent claim. The range is 4 to 10, and the corrections are made as shown in the attached sheet. r2, claims +1) In a high efficiency, multi-junction photovoltaic solar cell used with a condensing element, (a) a 1-screen, 5-μ, single-element substrate with no responsive junction inside! , responsive to the solar region ()ao,ss"0.111Aa semiconductor material capable of lattice matching within ±1%" (b) attached on the substrate and lattice matched to the semiconductor material; 1-25
LG5L (141
(C) a first homogeneous layer of a conductive material having a composition of 8rn0.1 gAa and absorbing solar energy at a first wavelength; Deposited with KM alignment on the layer 1-
Ga0.69In with 5eV semiconductor pandograph
OJIAa0.8PO,! (d) a second homogeneous layer of an 'E-body' having a composition of 1 and absorbing solar energy at a second wavelength; 1
- About In(1,
a third (e) of a semiconductor material having a composition of 5Ga04P and absorbing 55E energy at a third wavelength; each of said first, second and third layers being within ±1 of said single crystal substrate;
(f) said first, second and third Ω layers Q each contain a photoresponsive P/n homojunction and each layer has substantially the same lattice constant within 96 and (g) each of said first, second and third!2 layers Q generates essentially the same zero voltage photogenerated current as the other layers; and photovoltaic solar cells. (2. The photovoltaic solar cell according to claim 1, wherein the substrate layer is made of germanium. (3) Claim □, according to claim 1. photovoltaic solar type 1
A photovoltaic solar cell characterized by the addition of an outer surface layer of indium tin oxide deposited on the last deposited semiconductor layer in the cell. (4) A photovoltaic solar cell according to claim 3, characterized in that the outer surface layer has a thickness between 0.2 and 2.0 microns. A photovoltaic solar cell characterized by having A. (6) A photovoltaic solar cell according to claim 1, characterized in that the substrate layer has a thickness between 200 and 300 micrometers. (71) A photovoltaic solar cell according to claim 6, characterized in that the substrate layer has a thickness of about 250 microns. (6) Claim 1 9. The photovoltaic solar cell of claim 8, wherein each of the deposited semiconductor layers has a thickness of between 2 and 6 microns. 5. A photovoltaic solar cell, wherein each of the deposited semiconductor layers has a thickness of about 4 microns. The maximum variation of the lattice constant between the eyebrows from 661- is ±1.
A photovoltaic cell characterized in that it is 0 rice. ” Procedural amendment (method) to the Commissioner of the Patent Office on 22nd Q. 1988 1. Indication of the case 1988 Patent Application No. eriq91 2. Name of the invention Tazan Morikasa 3. Person making the amendment Relationship to the case Patent applicant 4, agent 5, date of amendment order - 6th day of the month of 1933, Th1i Eiyo 9. Ka. E, m-7, subject of correction

Claims (1)

[Claims] +1) In a high-efficiency, multi-mount photovoltaic solar cell using a light concentrator. ml is a single crystal having a single-element substrate having no internal solar energy response contact, and said substrate is in the solar spectral region 1.
1! (b) having a first uniform layer of semiconductor material deposited on the substrate, the lattice being a luxury on the substrate; G5LO, IBIInO812A8m composition with 1.25 eV of 1.25 eV and absorbing solar spectral energy at a first wavelength; ()a□, a9In with a second homogeneous layer of semiconductor material deposited by
+1.59Aa0.5P0.5 and absorbs solar spectral energy at a second wavelength. (dl) The second homogeneous layer has a third homogeneous material of semi-conductor material with a lattice!
G&□, composition of 5P! and absorbs solar spectral energy at a sixth wavelength, (el) each of the first, second and third In has essentially the same - Yuko definition within 1196 as the single crystal substrate. f) Said broom 1. The second and third layers each enclose a P/n homocontact responsive to solar energy, and each layer has a tunnel to the direct upper part 8 and the lower mrtir of the 7, and a p/n heterocontact. (gl A photovoltaic solar cell a, characterized in that said first, second, R and m6 shields each emit essentially the same zero-voltage solar energy generation current as the other pigeons. (2) A photovoltaic solar cell KN of the first FF-required range, characterized in that the group &l- is germanium. (3) Claims No. 8 to the photovoltaic solar cell described in item 1.
1. An f-electromotive solar cell characterized in that an outer surface layer of indium pentatin oxide is added on the last layered semiconductor layer. (4) A photovoltaic solar cell according to claim 1, characterized in that the substrate layer has a thickness between 200 and 300 microys. (5) % photovoltaic solar cell KN according to claim 1
A photovoltaic solar cell characterized in that the substrate layer has a thickness of about 250 inches. 16) A photovoltaic solar cell according to claim 41, characterized in that each of the deposited semiconductor layers has a thickness of between 2 and 6 microns. (7) In the photovoltaic solar cell according to claim 1-
M. A photovoltaic solar cell characterized in that each of the deposited semiconductor layers has a thickness of about 4 microns. (81 o'clock eave) The photovoltaic solar cell according to claim 3, characterized in that the outer surface layer has a thickness of 2.0 microy from O6. +9) The photovoltaic solar cell according to No. 33J4, wherein the outer surface layer has a grain size of about 1 micron. III. In the photovoltaic cell according to claim 1, the maximum variation in lattice constant between layers from 5.66 A is ±1.0.
A photovoltaic cell characterized by excellent properties.