JPS58154262A - Complex semiconductor device - Google Patents

Abstract

PURPOSE:To improve characteristics such as frequency characteristic and light receiving sensitivity and contrive the miniaturization and high reliability of a light receiving device, by forming light receiving elements and transistors on a single Ge semiconductor substrate. CONSTITUTION:The light receiving element is constituted of a P-N junction constituted of the Ge substrate 1 having one conductivity type and the first reverse conductivity type region 2 which is provided selectively on one main surface of the substrate 1. An insulation gate type semiconductor element is constituted of the second and third reverse conductivity type regions 3A and 3B provided on the main surface of the substrate 1 by being isolated each other, and a gate electrode 7 provided on the surface of the substrate 1 between the regions 3A and 3B via an insulation film 4''. Thereby, it becomes fit for the wavelength which is regarded as optimum in transmission by optical fibers, and brings further improvement of characteristics and further improvement of the miniaturization and reliability of a device, as compared with a conventional device.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a composite semiconductor device in which a light-receiving element and a transistor corresponding to a wavelength of 1.0JIm to 1.55 μs are provided on the same substrate. ) As is known with the practical application of the optical fiber transmission method in technology O''f11,
4 along with the progress of optical fiber itself! R types of original device technologies have been developed, i.e., solid-state phototravel devices that confine light within a waveguide and handle it, such as light-emitting devices such as semiconductor tapes, light-receiving devices such as photodiodes, optical switches, and optical devices. Connectors, etc. were developed, and nine systems made up of these and other optical devices not only had high performance, but also
1! This optical device technology has significantly improved affordability and economic efficiency.This optical device technology is not limited to providing individual devices with a single mar.
In order to promote miniaturization and high reliability, we are aiming to combine and integrate multiple elements with J% functionality. That-
In the direction of
Attempts have been made to form the electronic circuit in the power conversion circuit on the same substrate, which is considered to be convenient when controlling the optical output No. 18 using a lever. Due to the reduction in wavelength loss through chemical vapor deposition, etc., the minimum transmission loss in optical fibers has shifted to a wavelength of 1.55, and the wavelength has decreased by 9%.
In the 13th tone, when the material dispersion of jt7 Aiba becomes zero, the wavelength is 1.0 s to 1.5 s#@4f.
OlI Kai is considered to be the favorite 0koO#long I QJs+
1.5 Ssm Machine 11K>keb For the semi-quadramid receiving element, silicon (requires a semiconductor material with a narrower p bandgap than 81 nm), germanium (G
a) Among them are ternary or quaternary compound semiconductors such as InGaAs and InGaAsP. Many attempts have already been made to create light-receiving elements using the above-mentioned semiconductor materials, and G-light-receiving elements have already been put into practical use. If output No. 11 is obtained using a single light-receiving element and an external amplifier, there are inconveniences such as the characteristics being changed due to the capacitance and inductance of the arrangement 1, as mentioned earlier. For example, it is possible to combine and integrate a light receiving element, a transistor element, etc. by 1 degree. By forming a composite semiconductor device, it is possible to reduce the intermediate capacitance and inductance of the wiring portion, improve characteristics such as frequency characteristics, light reception sensitivity, etc., and also reduce the size of the light receiving device and reduce I%i6.
JII4: The purpose is to provide a φ membrane fabrication l-meeting.

(Structure of the Invention A composite semiconductor device as an object of the present invention comprises: - a germanium substrate having a conductor 11; a light-receiving element constituted by a PN junction consisting of a type region, and second and third illumination regions of opposite conductivity types disposed at an antagonal distance from each other in the vertical direction of the germanium substrate;
and a third insulated gate type chihiro body kite disposed on the substrate surface between the regions with an insulating film interposed therebetween. It is something to do.

(・) Examples of the Invention The present invention will be explained in detail below using examples with reference to the drawings on p. Transistor (hereinafter referred to as FIT)
In particular, when the semiconductor substrate is germanium, the expanded insulated gate cedar (hereinafter abbreviated as MI8) FET is most suitable. Similar to the semiconductor # family, electrons are larger than holes, and electron il# [μsx &, 600ai/V
@5eas hole) transfer [sp -1,800d/V @
8@c41i! f"t", it is advantageous to make the #1Ml8FET an n-channel type.@Therefore, in this embodiment, the conductivity type of the substrate is set to plii.@Figures 1 to 3 show the structure of the embodiment of the present invention. Manufacturing factory [This is a cross-sectional view showing ◎ As shown in Figure 1, the carrier length is lXl
0 am P germanium substrate 1 of the degree of misfortune
An n region 2 of the element and n regions 3 and 3B to be used as the source and drain of the MISFET are formed. In this embodiment, these Onn areas 2, 3 and 3B are used as photoresist T-masks to inject arsenic (As) by ion implantation at an acceleration voltage of 100 kCVail! was implanted at a dose of m5xlO"ω4 at a temperature of about 550°C and 1
They were simultaneously formed by annealing for a long time.

Next, the μ-loquat films 4, 4' and 41t shown in FIG. 2 are formed. However, the insulation film 41 functions as an anti-reflection film for the manual signal light of the light receiving element, and the insulation film 41
〇1111 can be used as gate insulating film of ISFET
In order for 1i%4' to function as an antireflection film,
There are already strict limits regarding light interference due to optical thin films, and this value was also set as a standard value in this embodiment. For example, when the insulating film 4' is made of silicon nitride (Si, N4), the thickness is 180 m@, and when it is made of silicon dioxide (SiOx), the thickness is 2301+s for incident light with a wavelength of 1.3 μm. etc. can be mentioned.

The composition, thickness, etc. of the Mayuzetsu-gai 4N function as a gate insulating film that greatly affects the characteristics of MISFh:T due to reasons such as changes in the surface level of the semiconductor depending on its composition. is selected depending on the characteristics required for the MISFET and according to the group [O conductivity 11] Generally, the material for the insulating films 4, 4' and 41 is 8
1sN4.810m and aluminum oxide (Kusudama et al. may superimpose two or more types of IIA depending on the requirements).To form these insulating materials, conduct at low temperature. In extreme cases, the chemical vapor deposition method (hereinafter referred to as CVD method) and 4IK plasma CVD method are suitable, and the various methods already reported are applicable. I&J
IK4, 4-41 was prepared using CICVD method), silane (81 &) and Annexia CN &) tMvh% Kame Nao approx. 3
At 20°C, allN4 was formed to a thickness of 1110°C and hydrogen fluoride (CNHhF) hydrogen difluoride () was formed.
IF) Ko! O:1 etchant makes the insulating metal 4
Etching tJIIL 90th i to provide an opening at 11° in diameter of about 60 mm in 1 part t4, Al 12 rim (mu L) by vapor deposition method as shown in 11 By forming a layer and applying a pattern, the KMI
8FWT source/drain electrodes 6m, (3B and gate electrode 7t) are formed, and the bottom surface of this composite semiconductor element substrate is die-bonded to gold (Au) plating 1111 as the piJi electrode of the receiving element. If it is based on legislation, an AuG/alloy layer will be formed on its own, so there is no need for special processing for sales, but AuG/evaporation may be performed on the basic surface. As a result, p@Shiru Reef 8F was formed and noodles.

Next, the operation of the composite device having the structure of this practical example is explained. Figure 4 on the 0 side is a conclusion diagram when a photodetector is formed by combining a light receiving element and a MISFET. In Figure 0, R1 is a bias resistor. , the island shows a charge resistance. 0 A reverse bias voltage is applied to the nll electric fi5 and the pil1 ward pole 8. In the method in which the source is not incident on the light receiving element, the bias resistor R1 and A voltage that matches the voltage division ratio of the apparent resistance of the light receiving element is applied to the gate gate 7. However, if the light misses the 41! edge concentration 4' and enters the light receiving element, the light receiving element A photowake-up force is generated at the PN junction of the PN junction, and carriers flow into the photodetector, which increases the apparent resistance of the photodetector by 1. In other words, the voltage applied to the gate voltage #7.7 decreases, causing the MISFET to As a result, the output voltage applied to both ends of the load resistor & becomes smaller, and the MISNET formed as above 0 can detect that one light is incident on the light receiving element. As a result of constructing the output current amplifier tlIl, the conventional 19-frequency a characteristic and reception sensitivity have been improved, and it has become possible to construct a smaller light receiving device.

It is also easy to form an avalanche wing photodiode (APD) by providing a guard ring on the light receiving element of this *mn by a method such as forming a deep n region in the n+ region, and the light receiving sensitivity is further improved. In addition, the above-mentioned actual t's leads to
, m substrate, p-channel type M I 81 2
It is also possible to form a T), and this #I formation is a type of low-Okiya G-APDK that causes avalanche multiplication by holes with a high ionization rate.
Effects of the Invention As explained above, the present invention has a wavelength of 1.0 μm to 1.0 μm.
A composite semiconductor device including a light receiving element and a transistor corresponding to 5 s μl density is provided by forming a line light receiving element and MI 13 Fj, T on a single germanium conductor substrate, and the original Phyno (compatible with wave disturbances that are suitable for transmission), and has an individual function using conventional technology (improved timing and smaller equipment compared to light receiving devices using chairs and electronic circuits) Rinka, gi!] iiK
It brings about the same as above and greatly contributes to the progress of light 7 Aiba communication.

[Brief explanation of the drawing]

1 and 1 are cross-sectional views showing practical examples of the present invention. In the figures, 1 is a p-type germanium substrate, 2 is an n+a region of a light-receiving element, 3 is a n1 region of an FET, 3B is a n1 region of an FET, and 4. 4'
and 41 is an insulating film, 5 is an n1Xil electrode of the light receiving element, and 6 is an insulating film.
6B is the source/drain IL of the FET, 7 is yg
Gate of 'r (Sorry, 8 indicates p-electron = 1)

Claims (1)

[Claims] a germanium substrate having one conductor; a PN bonding element comprising a germanium substrate and an opposite electrode region of IIIL selectively arranged on one main surface of the substrate; and a light receiving element comprising a germanium substrate. On the main surface of ``Kiwa 1/mK1111'', 9 votes 2 and 3 were cast.
The invention is characterized in that it includes an insulated gate lid semiconductor element that interacts with a gate electrode disposed on the substrate surface between the imaginary and second and third oppositely conductive imaginary regions with an insulating metal interposed therebetween. Composite semiconductor device 0