JPS5815221A - Method of producing condenser - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] The present invention relates to a method for manufacturing a capacitor.

Conventionally, in the manufacture of capacitors, as shown in Figure 1a, metal 2 is vapor-deposited on one surface of a film-like dielectric material such as a synthetic resin film, and a film-like S-electric material on which gold 142 is vapor-deposited is tightly wound. The wound body 3 is wound to form a wound body 3, and the wound body 3 is cut at a predetermined interval as shown by the line #Ii to form a sandwich with a film-like dielectric and a vague vapor-deposited metal 2 as shown in FIG. A capacitor was manufactured by obtaining cut pieces laminated in a shape, and welding the vapor-deposited metal end faces at cut surfaces S and 8 of the cut pieces to lead electrodes. In addition, Figure 1 bK
'J6 and 4 indicate the cut vfr surface.

However, when using the above-mentioned conventional manufacturing method, when cutting the wound weight to obtain a cut piece, cut edges occur on the surface of the cut surface 4, and the deposited metals come into contact with each other, or even do not come into contact with each other. The shortcomings were that the distance between them was reduced and the dielectric strength voltage was lowered.

Due to its high density, it is inconvenient and rare when used as a high voltage capacitor.

Moreover, in the cut piece, each vapor-deposited gold l14! When welding electrodes to the electrodes, adjacent vapor-deposited gold@R must not be short-circuited, so as shown in FIG. - 1 is a film-like dielectric on which is not deposited, rest 1-1, and on the left end side of the film-like dielectric 1 is metal 2 - film-like dielectric 1- on which snow is not deposited.
It is necessary to stack the 2111 fields of 2 and turn them once.

By doing K like this, money! 14m-1 is welded to one quadrupole and gold $1-1 is welded only to the other electrode.

However, the film-like dielectric, rest-goose, can be obtained by rotating l-1 by 180 degrees, but! The drawback was that the sheets had to be laminated and then rolled up.

The present invention has been made in view of the above, and it is an object of the present invention to provide a method for manufacturing a capacitor that eliminates the above-mentioned drawbacks.

The method of the present invention will be explained below with reference to Examples.

Figures 2a and b are illustrations of the method of the invention F! It is an explanatory diagram of S to A.

Metal is deposited on both sides of a film-like dielectric material 10 such as a synthetic resin film or paper, except for a predetermined width portion at both ends of the film-like dielectric material 1, as shown in FIG. 2aK.

Take the metal on the surface side of the film-like dielectric ■! -4
．． The metal on the back side of the film dielectric 1 is indicated by 2-1.

As shown in FIG. 2, a film-like dielectric material 1 having metals 2-4 and 2-1 deposited on both sides as described above is shown in FIG. Fold it so that it touches 42-1.

Metal 2-4 and g-s on one side of the above folding
The side surface shape of the film-like dielectric material 1 on which is vapor-deposited is wavy as shown in FIG. It will appear. Therefore, welding of the extraction electrode 3-4 and the electrode S is also extremely easy.

Furthermore, since no cutting is involved, no cutting burrs are generated and the dielectric strength voltage is not lowered.

Further, a film-like derivative 1 is provided between the metal plate 4 and S-S.
Because of the protrusion, the dielectric strength voltage also increases.

Furthermore, there is no need to stack and use film-like dielectrics with vapor-deposited metals in different positions, as in the past.

Also, manufacturing of the capacitor becomes easier.

Furthermore, since a plurality of unit capacitors are connected in parallel, it has a self-security property of 4.

As explained above, according to the present invention, it is easy to manufacture a capacitor, and the film-like i*
It is possible to easily manufacture a high-II1 voltage capacitor without requiring a body.

In addition, the electrodes are easy to use.

Furthermore, since the capacitor is formed by die-sinking in which a plurality of unit capacitors are connected in parallel, it has a self-security property of 4.

[Brief explanation of the drawing]

FIGS. 1A, 1B, and 1C are diagrams for explaining a conventional manufacturing method of content f. Figures 2a and 3 are explanatory diagrams for explaining the method of the present invention. Breath: film-like dielectric material. 3-4 and 1-I-/extracting electrode. Inventor Minami Nakazato Applicant Fuji Research Institute Co., Ltd. Representative Hara ■ (a) 7m (b) ■ CC) Agency Zn

Claims (1)

[Claims] A capacitor manufacturing method that involves stacking a film-like dielectric material with metal vapor-deposited on both sides, folded into a waveform so that the metal on one side is in contact with the other.