JPS581521B2 - Thermistor composition - Google Patents

Thermistor composition

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Publication number
JPS581521B2
JPS581521B2 JP53018462A JP1846278A JPS581521B2 JP S581521 B2 JPS581521 B2 JP S581521B2 JP 53018462 A JP53018462 A JP 53018462A JP 1846278 A JP1846278 A JP 1846278A JP S581521 B2 JPS581521 B2 JP S581521B2
Authority
JP
Japan
Prior art keywords
thermistor
powder
film
composition
characteristic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53018462A
Other languages
Japanese (ja)
Other versions
JPS54111699A (en
Inventor
戸崎博己
池上昭
物集照夫
有馬英夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP53018462A priority Critical patent/JPS581521B2/en
Publication of JPS54111699A publication Critical patent/JPS54111699A/en
Publication of JPS581521B2 publication Critical patent/JPS581521B2/en
Expired legal-status Critical Current

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Description

【発明の詳細な説明】 本発明は、印刷、焼成によって形成する膜状サーミスタ
用サーミスタ組成物にかかわるものであ.る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thermistor composition for a film thermistor formed by printing and baking. Ru.

従来の膜状サーミスタは、サーミスタ特性粉末、ガラス
粉末および有機ビヒクルとからなるサーミスタペースト
をアルミナ等の耐熱絶縁基板上に印刷、焼成して形成さ
れていた。
Conventional film thermistors are formed by printing and firing a thermistor paste consisting of a thermistor characteristic powder, a glass powder, and an organic vehicle on a heat-resistant insulating substrate such as alumina.

このペースト中のサーミスタ特性粉末は、ディスク形サ
ーミスタあるいはビード形サーミスタ等の個別部品に使
用しているMn,Co,Ni,Cus Al,Feの酸
化物のサーミスタ特性粉末のうちから選ばれた少なくと
も二種類以上の粉末を焼成して成る複合酸化物粉末であ
る。
The thermistor characteristic powder in this paste is at least two selected from thermistor characteristic powders of Mn, Co, Ni, Cus Al, and Fe oxides used in individual parts such as disk-shaped thermistors or bead-shaped thermistors. It is a composite oxide powder made by firing more than one type of powder.

また、ガラス粉末は、500℃〜700℃に軟化点をも
つホウケイ酸鉛ガラスが多用されている。
Further, as the glass powder, lead borosilicate glass having a softening point of 500°C to 700°C is often used.

そして、膜状サーミスタではサーミスタ特性粉末同志を
結合するためと、印刷、焼成によって形成される膜と基
板との接着力を上げるために、ガラス含量は30wt%
以上が必要である。
In film thermistors, the glass content is 30wt% in order to bond the thermistor characteristic powders together and to increase the adhesive strength between the film formed by printing and firing and the substrate.
The above is necessary.

しかし、このサーミスタ粉末とガラスから成る膜状サー
ミスタは、サーミスタ特性を有する材料、およびガラス
自体の比抵抗が太きいため、第1,2図に示すようにア
ルミナ基板1と、その上に形成された電極2と、電極同
志が接続されるように形成されたサーミスタ層3とから
なる厚膜抵抗と同様な構造の膜状サーミスタでは抵抗値
が数百KΩ以上となり、常用の回路素子として使用する
ことが難しい。
However, this film thermistor made of thermistor powder and glass is formed on an alumina substrate 1 and the alumina substrate 1 as shown in FIGS. A film thermistor with a structure similar to a thick film resistor, which consists of an electrode 2 and a thermistor layer 3 formed so that the electrodes are connected, has a resistance value of several hundred kilohms or more, and is used as a regular circuit element. It's difficult.

このため、構造的に低抵抗となる第3,4図に示すよう
に下部電極4と上部電極50間にサーミスタ層3を形成
した、いわゆるサンドインチ形の構造がとられる。
For this reason, a so-called sandwich-type structure in which a thermistor layer 3 is formed between a lower electrode 4 and an upper electrode 50 as shown in FIGS. 3 and 4, which has a low resistance structurally, is adopted.

しかし、このサンドインチ形膜状サーミスタでもIKΩ
以下の低抵抗値とするには、サーミスタ特性を有する材
料の比抵抗が100Ω’−cm以下のものを用いなけれ
ばならない。
However, even with this sandwich-inch film thermistor, IKΩ
In order to obtain the following low resistance value, it is necessary to use a material having thermistor characteristics with a specific resistance of 100 Ω'-cm or less.

このように、比抵抗の小さいサーミスタ材料は現在Cu
を含有した組成物が知られているが、抵抗値の安定性が
悪く、正確な温度検知用の素子を形成することは難しい
In this way, the thermistor material with low resistivity is currently Cu.
Compositions containing these are known, but the stability of the resistance value is poor and it is difficult to form an accurate temperature sensing element.

従って、サーミスタの低抵抗化の方法としてサーミスタ
特性粉末、ガラス粉末の他に第3成分としてAg,Au
等の貴金属粉末を加えること、あるいはその他の導電性
材料を加えることが知られている。
Therefore, as a method for lowering the resistance of thermistors, in addition to the thermistor characteristic powder and glass powder, Ag and Au can be used as a third component.
It is known to add noble metal powders such as or other conductive materials.

このうち、Ag粉末とR u02粉末を同時に添加した
サーミスタ組成物は、サーミスタ特性を有する粉末材料
自体のサーミスタ定数を有しながら巾広い抵抗値が得ら
れ、抵抗値の電圧依存性および雑音電流が少ない等の多
くの利点を有していた。
Among these, the thermistor composition in which Ag powder and R u02 powder are added at the same time has a wide range of resistance values while having the thermistor constant of the powder material itself, which has thermistor characteristics, and the voltage dependence of the resistance value and noise current are reduced. It had many advantages such as less.

しかしながら、このサーミスタ特性粉末一ガラス粉末−
Ag粉末−RuO粉末から成るサーミスタ組成物は.8
50℃を越える高い温度で焼成するとサーミスタ膜に発
泡が生じ良好なサーミスタ膜とならない。
However, this thermistor characteristic powder - glass powder -
A thermistor composition consisting of Ag powder-RuO powder is. 8
If fired at a high temperature exceeding 50° C., foaming will occur in the thermistor film and the thermistor film will not be good.

このため、抵抗値のばらつきが大きくなり、雑音電流の
発生、抵抗値の電圧依存性の発生、さらに温度サイクル
条件での抵抗値変化が大きい等の問題がでてきた。
This has resulted in problems such as large variations in resistance values, generation of noise current, voltage dependence of resistance values, and large changes in resistance values under temperature cycle conditions.

このように、850℃以上の温度での焼成が困難となる
と、厚膜抵抗、厚膜コンデンサ等を含む厚膜モジュール
回路基板の製造工程の自由度が減り基板製造が繁雑とな
る。
As described above, when it becomes difficult to bake at a temperature of 850° C. or higher, the degree of freedom in the manufacturing process of thick film module circuit boards including thick film resistors, thick film capacitors, etc. is reduced, and the board manufacturing becomes complicated.

本発明の目的は、上記した従来技術の欠点をなくし、高
温焼成可能で、かつサーミスタにした場合ニサーミスタ
特性材料と同等のサーミスタ定数を有するサーミスタ組
成物を提供するにある。
An object of the present invention is to eliminate the above-mentioned drawbacks of the prior art, to provide a thermistor composition that can be fired at high temperatures and, when made into a thermistor, has a thermistor constant equivalent to that of the other thermistor characteristic materials.

本発明のサーミスタ組成物は、比抵抗が大きいサーミス
タ材料を用いながら、低抵抗の膜状サーミスタを形成す
るため、Mn,Co,Ni,Fe、Alの酸化物のうち
から選ばれた少なくとも二種類のサーミスタ特性粉末と
、ガラス粉末と、R uO 2導電性粉末とからなり、
しがもRuo2導電性粉末含有量がサーミスタ組成物の
粉末総重量に対して、2wt%〜10wt%であること
を特徴としている。
The thermistor composition of the present invention uses at least two types of oxides selected from Mn, Co, Ni, Fe, and Al oxides in order to form a low-resistance film thermistor while using a thermistor material with a high specific resistance. consisting of a thermistor characteristic powder, a glass powder, and a RuO 2 conductive powder,
However, the content of the Ruo2 conductive powder is 2 wt% to 10 wt% based on the total powder weight of the thermistor composition.

なお、導電性粉末であるR u02の含有量が増すに従
って、膜状サーミスタの抵抗値は減少し、また、RuO
導電性粉末含有量が10wt%を越えるとサーミスタ定
数は減少し、サーミスタ特性材料自体のサーミスタ定数
より極めて小さくなる。
Note that as the content of RuO2, which is a conductive powder, increases, the resistance value of the film thermistor decreases;
When the conductive powder content exceeds 10 wt%, the thermistor constant decreases and becomes much smaller than the thermistor constant of the thermistor characteristic material itself.

〕ヒこのためRu02導電性粉末含有量は2wt%〜1
0wt%とした。
] Due to the hygroscopicity, the Ru02 conductive powder content is 2wt% to 1
It was set to 0 wt%.

また、RuO2導電性粉末含有量が2〜10wt%の間
では、抵抗値は1桁以上変化するが、サーミスタ定数は
ほぼ一定となり実用上非常に有効な組成域である。
Further, when the RuO2 conductive powder content is between 2 and 10 wt%, the resistance value changes by more than one order of magnitude, but the thermistor constant remains almost constant, which is a composition range that is very effective in practice.

さらに、ガラス含有量を45wt%以下とすると、サー
ミスタ定数は他のガラス含有量域に対してサーミスタ定
数が大きくなる。
Further, when the glass content is 45 wt% or less, the thermistor constant becomes larger than other glass content ranges.

以下、本発明を実施例により説明する。The present invention will be explained below with reference to Examples.

1実施例 I MnO、Co203、NiO粉末を3.5:1:0.5
のモル比で固相反応させ、これをボールで粉砕したサー
ミスタ特性粉末、表1に示す組成のガラス粉末、Ru0
2粉末とを表2No.1〜8に示す割合で総重量が10
gとなるよう秤取する。
1 Example I MnO, Co203, NiO powder at 3.5:1:0.5
A thermistor characteristic powder obtained by performing a solid phase reaction at a molar ratio of
2 powder and Table 2 No. The total weight is 10 in the ratio shown in 1 to 8.
Weigh it so that it weighs 100 g.

これらの粉末を、攪拌らいかい機で1時間混合し、次に
エチルセルロースを10%含むα−テルピネオール溶液
を有機バインダとして4cc加え、さらに1時間混練し
てサーミスタペーストを得る。
These powders are mixed in a stirrer for 1 hour, then 4 cc of α-terpineol solution containing 10% ethyl cellulose is added as an organic binder, and kneaded for another 1 hour to obtain a thermistor paste.

膜状サーミスタは、第3,4図のサンドインチ構造とし
た。
The membrane thermistor had a sandwich structure as shown in FIGS. 3 and 4.

即ち、アルミナ基板1上に、銀・パラジウム導電ペース
トをスクリーン印刷し、850℃で10分間焼成し下部
電極4とする。
That is, a silver/palladium conductive paste is screen printed on the alumina substrate 1 and fired at 850° C. for 10 minutes to form the lower electrode 4.

この上に上記のサーミスタペーストをそれぞれ印刷し、
130℃で10分間乾燥後、銀・パラジウム導電ペース
トをサーミスタペーストの乾燥物を介して下部電極と対
向するよう印刷し、これを900℃で10分間焼成して
サーミスタ層4、上部電極5を形成し、サジドイッチ珍
の厚膜サーミスタを形成する。
Print each of the above thermistor pastes on top of this,
After drying at 130°C for 10 minutes, silver/palladium conductive paste was printed through the dried thermistor paste so as to face the lower electrode, and this was baked at 900°C for 10 minutes to form thermistor layer 4 and upper electrode 5. and form a unique thick film thermistor.

電極の対向する面積は1mmで、サーミスタ層の焼成後
膜厚は40μmである。
The area where the electrodes face each other is 1 mm, and the thickness of the thermistor layer after firing is 40 μm.

このようにして得た膜状サーミスタの特性を表2厚膜サ
ーミスタの特性欄に示した。
The characteristics of the film thermistor thus obtained are shown in the characteristics column of thick film thermistor in Table 2.

なお、サーミス久特性材料の焼結体の比抵抗は720Ω
・cm(25℃)、サーミスタ定数は3290Kであっ
た。
The specific resistance of the sintered body of the thermistoric material is 720Ω.
・cm (25°C), the thermistor constant was 3290K.

また安定性は150℃の2000時間放置による抵抗値
の変化率で評価した。
Further, stability was evaluated by the rate of change in resistance after being left at 150° C. for 2000 hours.

実施例 2 Mn02、Co203、Fe203の粉末を3:1.5
:0.2のモル比で固相反応し、粉砕したサーミスタ特
性粉末、表1に示す組成のガラス粉末、Ru02粉末を
表341〜8に示す割合で秤取し、実施例1と同様にし
て、サーミスタペースストを調製し、膜状サーミスタを
形成した。
Example 2 Mn02, Co203, Fe203 powder at 3:1.5
The thermistor characteristic powder obtained by solid phase reaction at a molar ratio of 0.2, glass powder having the composition shown in Table 1, and Ru02 powder were weighed out in the proportions shown in Tables 341 to 8, and the same procedure as in Example 1 was carried out. , a thermistor paste was prepared and a film-like thermistor was formed.

このサーミスタの特性を表3厚膜サーミスタ特性欄に示
した。
The characteristics of this thermistor are shown in the thick film thermistor characteristics column of Table 3.

なお、サーミスタ特性材料の焼結体の比抵抗は1.5K
Ω一cm(25℃)で、サーミスタ定数は3850Kで
あった。
The specific resistance of the sintered body of the thermistor characteristic material is 1.5K.
At Ω 1 cm (25° C.), the thermistor constant was 3850K.

実施例 3 Mn02、Co203、Al203、F e 2 0
粉末を2.5 : 1.5 : 0.2 : 0.2の
モル比で固相反応させたサーミスタ特性材料を用い、実
施例1と同様にして表4No.1〜8に示す組成の厚膜
サーミスタを形成した。
Example 3 Mn02, Co203, Al203, Fe20
Table 4 No. 4 was prepared in the same manner as in Example 1 using a thermistor characteristic material in which powder was reacted in a solid phase at a molar ratio of 2.5: 1.5: 0.2: 0.2. Thick film thermistors having the compositions shown in Nos. 1 to 8 were formed.

このサーミスタの特性は第4表厚膜サーミスタの特性欄
に示すようであった。
The characteristics of this thermistor were as shown in the characteristics column of thick film thermistor in Table 4.

なお、サーミスタ特性材料の焼結体の比抵抗は3.OK
Ω一cmで、サーミスタ定数は4100Kであった。
Note that the specific resistance of the sintered body of the thermistor characteristic material is 3. OK
When Ω was 1 cm, the thermistor constant was 4100K.

以上述べたごとく、本発明によるサーミスタ組成物を用
いてサーミスタペーストを作成し、これを用いて厚膜サ
ーミスタを作成すると、900℃内外の高温でペースト
を焼成しても得られたサーミスタ層は発泡などがなく、
かつ得られた厚膜サーミスタは常用回路素子としての抵
抗値を有し、安定性が向上し、サーミスタ定数の大きな
ものとなる。
As described above, when a thermistor paste is created using the thermistor composition according to the present invention and a thick film thermistor is created using this, the thermistor layer obtained is foamed even if the paste is fired at a high temperature of around 900°C. There is no such thing as
Moreover, the obtained thick film thermistor has a resistance value as a commonly used circuit element, has improved stability, and has a large thermistor constant.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は厚膜抵抗構造膜状サーミスタの平面図、第2図
は第1図のA−A断面図、第3図は厚膜コンデンサ構造
膜状サーミスタの平面図、第4図は第3図のA−A断面
図である。 1・・−・・・アルミナ基板、3・・・・・・サーミス
タ層、4・・・・・・下部電極、5・・・・−・上部電
極。
Fig. 1 is a plan view of a film thermistor with a thick film resistance structure, Fig. 2 is a sectional view taken along the line A-A in Fig. 1, Fig. 3 is a plan view of a film thermistor with a thick film capacitor structure, and Fig. 4 is a 3 It is an AA sectional view of the figure. 1... Alumina substrate, 3... Thermistor layer, 4... Lower electrode, 5... Upper electrode.

Claims (1)

【特許請求の範囲】[Claims] I Mn1Co,Ni,Fes Alの酸化物のうち
から選ばれた少なくとも二種類のサーミスタ特性粉末と
、ガラス粉末と、Ru02導電性声末とからなるサーミ
スタ組成物において、Ru02導電性粉末量,がサーミ
スタ組成粉末総量の2wt%〜10wt%であることを
特徴とするサーミスタ組成物。
In a thermistor composition comprising at least two types of thermistor characteristic powders selected from oxides of IMn1Co, Ni, and FesAl, a glass powder, and a Ru02 conductive end, the amount of the Ru02 conductive powder is the thermistor. A thermistor composition characterized in that the amount is 2 wt% to 10 wt% of the total powder composition.
JP53018462A 1978-02-22 1978-02-22 Thermistor composition Expired JPS581521B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53018462A JPS581521B2 (en) 1978-02-22 1978-02-22 Thermistor composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53018462A JPS581521B2 (en) 1978-02-22 1978-02-22 Thermistor composition

Publications (2)

Publication Number Publication Date
JPS54111699A JPS54111699A (en) 1979-09-01
JPS581521B2 true JPS581521B2 (en) 1983-01-11

Family

ID=11972293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53018462A Expired JPS581521B2 (en) 1978-02-22 1978-02-22 Thermistor composition

Country Status (1)

Country Link
JP (1) JPS581521B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS581522B2 (en) * 1978-03-01 1983-01-11 株式会社日立製作所 Thermistor composition
CN114853448B (en) * 2022-06-08 2023-05-16 中国振华集团云科电子有限公司 Preparation method of negative temperature coefficient thermal sensitive ceramic material for low-temperature co-firing

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52139990A (en) * 1976-05-17 1977-11-22 Hitachi Ltd Thermistor composition and thermistor paste composition

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52139990A (en) * 1976-05-17 1977-11-22 Hitachi Ltd Thermistor composition and thermistor paste composition

Also Published As

Publication number Publication date
JPS54111699A (en) 1979-09-01

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