JPS58148954U - semiconductor equipment - Google Patents

semiconductor equipment

Info

Publication number
JPS58148954U
JPS58148954U JP4719182U JP4719182U JPS58148954U JP S58148954 U JPS58148954 U JP S58148954U JP 4719182 U JP4719182 U JP 4719182U JP 4719182 U JP4719182 U JP 4719182U JP S58148954 U JPS58148954 U JP S58148954U
Authority
JP
Japan
Prior art keywords
light
hole
semiconductor equipment
semiconductor device
receiving element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4719182U
Other languages
Japanese (ja)
Inventor
小出 正信
司 竹内
Original Assignee
オムロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by オムロン株式会社 filed Critical オムロン株式会社
Priority to JP4719182U priority Critical patent/JPS58148954U/en
Publication of JPS58148954U publication Critical patent/JPS58148954U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図A、 Bはそれぞれこの考案による半導体装置の
断面図および上面図、第2図はこの考案の装置をフォト
カプラに適用した構成図、第3図はこの考案の装置を適
用したフォトマイクロセンサの構成図、第4図および第
5図は従来のフォトカプラを示す構成図である。 11・・・・・・受光素子、lla・・・・・・主面、
12・・・・・・孔部、12a・・・・・・側面、13
・・・・・・反射膜、14・・・・・・発光素子。
Figures 1A and B are a cross-sectional view and a top view of a semiconductor device according to this invention, respectively, Figure 2 is a configuration diagram in which the device of this invention is applied to a photocoupler, and Figure 3 is a photomicrograph to which the device of this invention is applied. The configuration diagram of the sensor, FIGS. 4 and 5, is a configuration diagram showing a conventional photocoupler. 11... Light receiving element, lla... Principal surface,
12... Hole, 12a... Side, 13
...Reflection film, 14... Light emitting element.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 発光および受光素子を混成してなる半導体装置において
、受光素子の主面の一部に該主面側へ末広がり状の孔部
を設けるとともに、少なくとも孔゛  部の側面に反射
膜を形成し、この孔部の内底部に発光素子を載置したこ
とを特徴とする半導体装置。
In a semiconductor device comprising a hybrid of a light-emitting and a light-receiving element, a part of the main surface of the light-receiving element is provided with a hole that widens toward the main surface, and a reflective film is formed on at least the side surface of the hole. A semiconductor device characterized in that a light emitting element is placed at the inner bottom of a hole.
JP4719182U 1982-03-31 1982-03-31 semiconductor equipment Pending JPS58148954U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4719182U JPS58148954U (en) 1982-03-31 1982-03-31 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4719182U JPS58148954U (en) 1982-03-31 1982-03-31 semiconductor equipment

Publications (1)

Publication Number Publication Date
JPS58148954U true JPS58148954U (en) 1983-10-06

Family

ID=30058159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4719182U Pending JPS58148954U (en) 1982-03-31 1982-03-31 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS58148954U (en)

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