JPS58138332U

JPS58138332U - liquid phase growth equipment

Info

Publication number: JPS58138332U
Application number: JP3459082U
Authority: JP
Inventors: 弘喜浜田
Original assignee: 三洋電機株式会社
Priority date: 1982-03-11
Filing date: 1982-03-11
Publication date: 1983-09-17

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Brief explanation of the drawing]

、　　第１図及び第２図Ａ、　Ｂは本考案の実施例装置
を示し、第１図は断面図、第２図Ａは要部平面図、第２
図Ｂは同図ａのＢ−Ｂ線断面図、第３図は第１図装置に
おけるメルトと基板との接触を示す断面図、第４図は埋
込み型半導体レーザを示す断面図である。１・・・第１ボート、２・・・基板保持部、３・・・第
２ボート、４・・・メルト溜、５・・・治具。補正　昭５７．　６．２８実用新案登録請求の範囲、図面の簡単な説明を次のよう
に補正する。Ｏ実用新案登録請求の範囲一生面上に基板保持部が形成された第１ボート、該第１
ボートの一生面上を摺動自在に装着され、上記−主面と
垂直方向に貫通する複数のメルト溜が形成された第２ボ
ート、該第２ボートの任意のメルト溜の底部に配され、
基板とメルトとの接触面積を規定する治具からなること
を特徴とする液相成長装置。図面の簡単な説明第１図及び第２図Ａ、　Ｂは本考案の実施例装置を示し
、第１図は断面図、第２図Ａは要部平面図、第２図Ｂは
同図ＡのＢ−Ｂ線断面図、第３図は第１図装置における
メルトと基板との接触を示す断面図、第４図は埋込み型
半導体レーザを示す断面図である。１・・・第１ボート、２・・・基板保持部、３・・・第
２ボート、４・・・メルト溜、５・・・治具。, Fig. 1 and Fig. 2 A and B show an embodiment of the present invention, in which Fig. 1 is a sectional view, Fig. 2 A is a plan view of the main part, and Fig. 2 A is a plan view of the main part.
FIG. 3 is a sectional view showing the contact between the melt and the substrate in the apparatus shown in FIG. 1, and FIG. 4 is a sectional view showing the buried semiconductor laser. DESCRIPTION OF SYMBOLS 1... First boat, 2... Substrate holding part, 3... Second boat, 4... Melt reservoir, 5... Jig. Correction 1984. 6.28 The claims for utility model registration and the brief description of the drawings are amended as follows. O Utility Model Registration Claims A first boat on which a substrate holding portion is formed;
a second boat that is slidably mounted on the entire surface of the boat and is formed with a plurality of melt reservoirs that penetrate the main surface in a direction perpendicular to the main surface;
A liquid phase growth apparatus characterized by comprising a jig that defines the contact area between a substrate and a melt. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 and Fig. 2 A and B show an embodiment of the present invention, in which Fig. 1 is a sectional view, Fig. 2 A is a plan view of the main part, and Fig. 2 B is a plan view of the main part. FIG. 3 is a cross-sectional view showing the contact between the melt and the substrate in the apparatus shown in FIG. 1, and FIG. 4 is a cross-sectional view showing an embedded semiconductor laser. DESCRIPTION OF SYMBOLS 1... First boat, 2... Substrate holding part, 3... Second boat, 4... Melt reservoir, 5... Jig.

Claims

[Scope of utility model registration request]

a first boat having a substrate holding portion formed on one main surface;
A second boat that is slidably mounted on one main surface of the boat and has a plurality of melt reservoirs formed therein that extend through the main surface in a direction perpendicular to the main surface, at the bottom of any arbitrary melt reservoir of the second boat; 1. A liquid phase growth apparatus comprising a jig arranged to define a contact area between a substrate and a melt.