JPS58138081A - Amorphous silicon solar cell - Google Patents
Amorphous silicon solar cellInfo
- Publication number
- JPS58138081A JPS58138081A JP57020361A JP2036182A JPS58138081A JP S58138081 A JPS58138081 A JP S58138081A JP 57020361 A JP57020361 A JP 57020361A JP 2036182 A JP2036182 A JP 2036182A JP S58138081 A JPS58138081 A JP S58138081A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- electrode
- spaces
- amorphous silicon
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000011521 glass Substances 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 229910003437 indium oxide Inorganic materials 0.000 abstract description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001887 tin oxide Inorganic materials 0.000 abstract description 3
- 238000001259 photo etching Methods 0.000 abstract description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 2
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 241000254158 Lampyridae Species 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000272201 Columbiformes Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 235000012907 honey Nutrition 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はアモルファスシリコン太陽電池の電番形状に閤
するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention applies to the shape of an amorphous silicon solar cell.
アモルファスシリコン（１７下ト１１と略す）を用いた
典磨的な太−電池の構造は第１１１に示すように、可視
光を透過するガラス基板１０上に逓鳴電１１２、硼素を
添加し九ｊｌｌｌａ−ａｉ層３、不純物無添加ｅ（＠ａ
−ａｊ層４、燐を添加した５ｌｌａ−ｓ４ｊ１５と堆積
し６としてオー４ツクコンタクト電響（後電榔）を付け
るもので光はガラス基１［１側から入射する。この２１
％−太陽電池の光起電圧は０．６〜ａ９Ｖであり高電圧
を得るには該太陽電池を１列に有限段数つなげて用−る
。The structure of a conventional thick battery using amorphous silicon (abbreviated as 17 and 11) is as shown in No. 111, in which a transmitter 112 is placed on a glass substrate 10 that transmits visible light, and boron is added. jlla-ai layer 3, impurity-free e(@a
-aj layer 4 is deposited with 5lla-s4j15 doped with phosphorus, and an oak contact electric wave (rear electric wave) is attached as 6, and light enters from the glass substrate 1 [1 side. This 21
The photovoltaic voltage of a %-solar cell is 0.6 to a9V, and to obtain a high voltage, a finite number of solar cells are connected in one row.
従来よ一用一られている直列線銃方法０Ａｌｌ的な例と
して直列５股ＯＭ太陽電池の平１ｌｉ１１′１及び断面
図を１１１２１１ｂｉび（５１に示す、・−−イ層１０
を挾んで透明電極８と蕾電蓼９が５段並んでいて、９の
螢電極によりて隣の透明電１ｉ８に＊続され模に並んだ
５段が直列につながれている。ま−＊１２に二点鎖線に
示しえ領械に光が照射される。一般に螢電１９はアルＪ
ニウム、タロムなどの蒸着膜が用いられ電＊ａと９は同
一１１０形状１０重ね合わされ１９の後電極蒸着時ｔ）
ｑスタ合わせ０１１１１さによ抄隣警電響関隔は８，９
ともに少なくとも５００７１１１１は離さなければなＬ
なかつえ、しかし。As an example of the conventionally used series line gun method, the flat 1li11'1 and cross-sectional view of a series 5-pronged OM solar cell are shown in 111211bi (51).
Transparent electrodes 8 and bud electrodes 9 are lined up in five rows with the electrode 9 in between, and are connected to the adjacent transparent electrode 1i8 by the electrode 9, so that the five rows arranged in a pattern are connected in series. Light is irradiated onto the area shown by the two-dot chain line in *12. Generally, Keiden 19 is Al J
A vapor-deposited film of Ni, Talom, etc. is used, and the electrodes *a and 9 are overlapped with the same 110 shape 10, and when the electrode is vapor-deposited after 19.
q star combination 01111 Sayyoshou next police telephonic barrier is 8,9
Both must be separated by at least 50071111 L
Nakatsue, but.
この方法では隣接電極幅５００μ常は意味をなさず太陽
電池の齋換効率を低下させるの＾であっ良、 ・本発
明は上ｒ事実を鑑みて為された庵ので、その目的は該Ｊ
ｌｌ電電極間有効利用にある。In this method, an adjacent electrode width of 500μ usually makes no sense and reduces the conversion efficiency of the solar cell. -The present invention was made in view of the above facts, and its purpose is to
This is due to the effective use of the space between the electrodes.
以下実施例に基づいて本発明の詳細な説明する。The present invention will be described in detail below based on Examples.
ｍ５Ｎｈ１’Ｂびの）は本発明の電極形状を含むＧ−ｘ
ｉ太陽電池の平ｍＩ！ｌｌ及びｌｌｌＩ面図であ抄、１
５はガラス基板、１４は透明電極、１５は後電響、１６
はａ−ａＳ膜、１８は光照射領域である。螢電１ｉ１５
間は蒸着時のマスク合わせの困難さよｓ ＳＯＯ声愼以
下にはできないか酸化錫、酸化インジウム、酸化インジ
ウムｅ錫などが用いられる透明電極１４はフォトエツチ
ングによ抄加工されるので電極間隔は１００１１１１以
下とでき、かつ十分な絶縁性が保てる。一方、光照射領
域内でａ−ａｉｇの有効利用領域は後電舎に対して少な
くとも２０ＯＩＩＩ集外儒にまで存在し得る０本発明に
よる電極形状は、螢電極Ｏ隣緩関隔は５００声淋〜Ｈ）
ＯＯ１１欝、逓―電蓼聞陶は５０〜１１００ｊとし、透
明／１１Ｅ極は後電響に対して少なくとも２００ｓ惰食
入ｄるよらにしである。m5Nh1'Bbino) is G-x containing the electrode shape of the present invention
iSolar cell flat mI! Excerpt from ll and lll side views, 1
5 is a glass substrate, 14 is a transparent electrode, 15 is a back-electronic device, 16
is an a-aS film, and 18 is a light irradiation area. Keiden 1i15
The difference is the difficulty of mask alignment during vapor deposition.Is it possible to make it less than SOO?The transparent electrode 14, which uses tin oxide, indium oxide, indium e-tin oxide, etc., is processed by photoetching, so the electrode spacing is 1001111. The following can be achieved, and sufficient insulation can be maintained. On the other hand, the effective use area of a-aig within the light irradiation area can exist up to at least 20 OIII outside the area. ~H)
OO11, the transmitter should be 50 to 1100J, and the transparent/11E pole should be at least 200s inert to the after-electrophonic sound.
本発明は以上のよつな構造のため電響間（’）ａ −＃
ｉ層をも有効に使先、光照射領域内でｈかけ上の賢換効
率は向上する。以下に従来例との比較として警光灯２０
０１ｓｚ下での蜜換効率を第１表に掲ける。The present invention has the above-mentioned structure, so that the electrophonic interval (')a-#
The i-layer can also be used effectively, and the conversion efficiency over h can be improved within the light irradiation area. Below is a warning light 20 as a comparison with a conventional example.
Table 1 shows the honey exchange efficiency under 01sz.
第 １！Ｉ
第１１１！の普は１ （ｍ Ｘ １ ｆｆｉの竜ル３段
での値で。Number 1! I 111th! The normal value is 1 (m x 1 ffi's value at 3rd stage of Ryuru.
透明電極間隔をＢＯｓ愼とした鳩舎、螢電極を７５０μ
惰位とするのが効率が一書よい。Pigeon house with transparent electrode spacing as BOs, firefly electrode 750μ
It is much more efficient to coast.
ｔ ｌ１ｓｌｆ）Ｉｆ単な説明
第１ｍＩｄａ−ａｉ太陽電池の典−例、第２１１ｋｌは
第１＠ｔ）ａ−ａｔ太陽電池を盲列５段Ｋｍんだものの
平１−で第２１１１６）はその−面図、第５１が本発明
による改皇例で−）は千−図、Φ）け−■−である。t l1slf) If simple explanation of the 1st mIda-ai solar cell example, the 211kl is the 1st @t) a-at solar cell with 5 blind rows Km, and the 21116) is the - The 51st side view is the Imperial Revised Example according to the present invention.
１．７．１！Ｓ ・・・・・・ガラス基板２．８．１４
・・・・・・透明電極
！、 ４．５．１０．１４ ・・・・・・ａ−ａシ層
４．９．１５ ・・・・・・螢電極
以 上
出願人 株式会社 −訪精工會
代理人 弁理士 最上 陣1.7.1! S...Glass substrate 2.8.14
...Transparent electrode! , 4.5.10.14 ・・・・・・a-a layer 4.9.15 ・・・・・・Firefly electrode and above Applicant: Hosei Kokai Co., Ltd. Agent Patent attorney: Jin Mogami
Claims (2)
ルファスシリコン太陽電ｉ１１にお−て、ガラス基板上
逓明電ｍを７七ル７アスシリコン層上の螢電響に対して
形状が大であるζ七を４１１徴とするアモルファスシリ
コン太陽電池。(1) In parallel and series multi-stage amorphous silicon solar cells on a single substrate, the shape of the solar cells on a glass substrate is compared to that of 77 layers on a silicon layer. An amorphous silicon solar cell with 411 characters of ζ7, which is the largest.
隣ＩＩ俵電極間隔が５００１１１９１Ｌ 〜１０１００
Ｏであり、かつ後電極に対して透明電極が少なくとも２
００ｊ惰外儒に出ている特許請求の範１１項記載のアモ
ルファスシリコン太陽電池。(2) Neighboring transparent electrode spacing force! 50stn~100js,
Adjacent II bale electrode spacing is 50011191L ~ 10100
O, and the transparent electrode is at least 2 times the back electrode.
The amorphous silicon solar cell according to claim 11 appearing in 00j.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57020361A JPS58138081A (en) | 1982-02-10 | 1982-02-10 | Amorphous silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57020361A JPS58138081A (en) | 1982-02-10 | 1982-02-10 | Amorphous silicon solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58138081A true JPS58138081A (en) | 1983-08-16 |
Family
ID=12024947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57020361A Pending JPS58138081A (en) | 1982-02-10 | 1982-02-10 | Amorphous silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58138081A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55107276A (en) * | 1979-02-09 | 1980-08-16 | Sanyo Electric Co Ltd | Photoelectromotive force device |
-
1982
- 1982-02-10 JP JP57020361A patent/JPS58138081A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55107276A (en) * | 1979-02-09 | 1980-08-16 | Sanyo Electric Co Ltd | Photoelectromotive force device |
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