JPS58138041A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS58138041A
JPS58138041A JP57019544A JP1954482A JPS58138041A JP S58138041 A JPS58138041 A JP S58138041A JP 57019544 A JP57019544 A JP 57019544A JP 1954482 A JP1954482 A JP 1954482A JP S58138041 A JPS58138041 A JP S58138041A
Authority
JP
Japan
Prior art keywords
bonding
lead frame
wire
junction
pressing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57019544A
Other languages
Japanese (ja)
Inventor
Shinichi Miyata
伸一 宮田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57019544A priority Critical patent/JPS58138041A/en
Publication of JPS58138041A publication Critical patent/JPS58138041A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
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    • H01L2224/05554—Shape in top view being square
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
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    • H01L2224/73265—Layer and wire connectors
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    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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    • H01L2924/01082—Lead [Pb]

Abstract

PURPOSE:To improve the junction force at a stitching part by increasing the junction area and thus eliminate that a gold wire is placed under excess pressure to be crushed even when the load is increased, by pressing the bonded junction part after bonding a bonding wire to a lead frame. CONSTITUTION:After bonding at the first position wherein the bonding head of the lead frame carriage part in a bonding device exists, the junction part between the lead frame and the metallic wire is further pressed and bonded at the second position wherein the pressing mechanism in the direction of carriage exists resulting in the improvement of the junction force by increasing the junction area, and the pressing jig of the pressing mechanism is shown in Fig. (a) and (b). The pressing jig 8 of one example in the figure is one example of an angular cylindrical type, and the lower surface thereof is a flat end part 8a in t' of the external side of the thickness t, while the internal side forms a slope part 8b which is continuous form the above-mentioned plane part and has recess to the internal side of the angular cylinder. The compression bonding is attained after performing a wire bonding to the lead frame 3 by the pressing jig.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は半導体装置の製造方法にかかに、善にリード
フレームに対するワイヤボンデイン〆の改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method of manufacturing a semiconductor device, and more particularly to an improvement in wire bonding for a lead frame.

〔発明の技術的背景〕[Technical background of the invention]

半導体装置の製造におけるワイヤボンディンダ方法とし
て、金ワイヤの先端を電気トーチ等で溶融させてボール
を形成し九のち、それを半導体チップ上の電極に圧着さ
せ、ついでリードフレーム上に圧着さ艙るボールステッ
チボンディング法が一般的に用いられている。第１図（
ａ）、（ｂ）　Ｋｄｆ　−ルステッチボンデイングによ
って半導体チップ（１）上の電極（２）とり−ドフレー
ム（３）閣にボンディングを施し先金ワイヤ（４）　ｔ
）　＊状を示す。なお、（ｆｉ）ａリードフレームの表
面に形成され丸めつき層である。As a wire bonder method in the manufacture of semiconductor devices, the tip of a gold wire is melted with an electric torch or the like to form a ball, which is then crimped to an electrode on a semiconductor chip, and then crimped onto a lead frame. A ball stitch bonding method is commonly used. Figure 1 (
a), (b) Kdf - Bonded to the electrode (2) on the semiconductor chip (1) by stitch bonding to the domed frame (3) and the lead wire (4) t
) *Indicates the condition. Note that (fi)a is a rounded layer formed on the surface of the lead frame.

次に、リードフレームに銅系Ｏ素材を用いめっき被覆を
施さないでポールステッチポンディン〆を行なうにはリ
ードフレームの温度を平均３００℃以上にし、さらに非
酸化性１に％／ｈし遺覚性の雰囲気の中でボンディング
を施すことが知られている（例えは特開＠５５−１３８
！４６号公報）。第２図に、圧着１真（６）の先端部の
断面と、形成され九ステッチ部（９−ド７レームと全９
イヤＯ圧着部）（４ｍ）を示す。図示の如く、ステッチ
部にシける金ワイヤとリードフレームとの接合画積は圧
着工１４ＩＯ下端部の両横によって嫌は決定され為とと
もに会ワイヤとり−ドフレームとの接金力もき會る。Next, in order to perform pole stitch bonding without using a copper-based O material for the lead frame and without plating, the temperature of the lead frame should be set to 300°C or higher on average, and the non-oxidizing property should be increased to 1%/h. It is known that bonding is performed in a sexual atmosphere (for example, in JP-A-55-138)
! Publication No. 46). Figure 2 shows the cross-section of the tip of the crimp 1 stem (6) and the formed 9 stitches (9-do 7 frame and total 9 stitches).
Ear O crimping part) (4m) is shown. As shown in the figure, the bonding area between the gold wire and the lead frame at the stitching portion is determined by both sides of the lower end of the crimping tool 14IO, and the bonding force with the wire lead frame is also determined.

〔背景技術の問題点〕[Problems with background technology]

載置のように、銅系素材のリードフレームにめりａｔ施
さないで９イヤボンデイングを行なう場合、リードフレ
ーム０１１１Ｉ化を防止する必要があるが、ステッチ部
のり−ドフレーム上の一部が酸化していた）％その伽Ｏ
汚れがありえような場合。When performing 9-ear bonding on a lead frame made of a copper-based material without applying AT, as in mounting, it is necessary to prevent the lead frame from becoming 0111I. )%SonokaO
If dirt is likely.

金ワイヤとり−ドフレームとの接合面積が実質的に滅に
接合力が低下してしまうことが′ありた。There have been cases where the bonding strength of the bonding area with the gold wire lead frame is substantially reduced.

〔発明Ｏ１１的〕 この発明は背景技術の問題点ｔ＆臭する半導体装置の製
造方法を提供するものである。[Invention O11] This invention provides a method for manufacturing a semiconductor device that solves the problems and odors of the background art.

〔発明の概要〕[Summary of the invention]

この発−Ｋかかる半導体装置の製造方法は銅系の素材で
なるり−ｙｙレー五に半導体テラー２１マウントシ、つ
いでボールステッチポンディング法によに９イヤボンデ
イングを施す半導体装置の製造において、リードフレー
ムに対しポンディンダワイヤ【ポンディングしたのち、
こＯボンディングされた接合ｉｉ【押圧することｔ４Ｉ
ＩＩＩとする。This method of manufacturing a semiconductor device is based on a lead frame made of a copper-based material. Against the ponding wire [after pounding,
This bonded joint ii [pressing t4I
III.

〔発明の実施例〕[Embodiments of the invention]

ｉｌｌ施例を第３図以降を参照し１詳１１ＫＩ！明する
。第３図のポンディング装置のり一ド７レーム搬送部（
７１のポンディングヘッドのある第１の位置（７畠）で
ポンディングを行なう九あとに、搬送方向の加圧機構の
ある第２の位置（７ｂ）でリードフレームと金９イヤ０
＠合部をさらに加圧、圧着を施して接合面積を増し接合
力を向上させようとするものである。そして加圧機構の
加圧油＾を嬉４図（ａ）。Please refer to Figure 3 onwards for ill examples. 1 details 11KI! I will clarify. Figure 3: Bonding device glue 7-frame conveying section (
After performing pounding at the first position (7b) where the pounding head of No.71 is located, the lead frame and gold wire are placed at the second position (7b) where there is a pressure mechanism in the conveying direction.
The purpose is to further pressurize and crimp the joint to increase the joint area and improve the joint force. Figure 4 (a) shows the pressurized oil in the pressurizing mechanism.

（ｂ）　Ｋ示し、加圧を施す状態を第５図に示す・図に
おける一例Ｏ加圧ｉ　Ａ　（８）は！例Ｏ角筒蓋で、そ
の下面は肉厚０）のうち外側の（１つが平端部（Ｉｍ）
で、内側は前記平面部から連続して角筒の内側に凹とな
る斜面部（８ｂ）を形成して−る・上記加圧治具によっ
てリードフレーム（３）　Ｋ　９イヤボンデイングを施
し九〇ちに第５図に示す如く圧着が達成されるように一
例の肉厚０）唸り−ド７レーム上Ｏ金ワイヤのすべてに
かがるようＫＯｂ■以上、斜面部の深さ０りは金ワイヤ
の価によってＪ１％表るも径の０．５〜１．０倍の範囲
、平端部の幅はＯｊ！■ｉｉｉ＊に設定して好適しえ。(b) K is shown and the state in which pressurization is applied is shown in Fig. 5. An example of O pressurization i A (8) in the figure is! Example: O is a rectangular cylinder lid, the bottom surface has a wall thickness of 0), and the outer (one is the flat end (Im)).
On the inside, a slope part (8b) is formed which is concave to the inside of the rectangular tube and continues from the flat part.・The lead frame (3) is subjected to K9 ear bonding using the pressure jig mentioned above. In order to achieve crimping as shown in Fig. 5, the thickness of the gold wire should be 0) above KOb■ so that all of the gold wire on the 7 frame is covered with gold wire, and the depth of the slope part is 0 or more. Depending on the value of the wire, J1% is in the range of 0.5 to 1.0 times the diameter, and the width of the flat end is Oj! ■It is recommended to set it to iii*.

なお、加圧治具の寸法（角筒の１１）は使用するり−ド
７レー五によって異なるＯ″ｅＩ１ｅ８１品毎る寸法の
ものを用意することは勿論である。It goes without saying that the dimensions of the pressure jig (square cylinder 11) are different depending on the type of rod used.

〔発＠Ｏ効釆〕[From @O effect button]

ζＯ発＠によれば、まず、リードフレーム表面の一部の
酸化や汚れに対しても金９イヤとの接合面積を増加させ
ることによって、ステッチｍｏ接合力を向上させ解決を
はかっている。なお、接合両横の増大を金ワイヤ圧着工
具の先端部両横の増加によって紘かるＫａ次に述べるよ
うｔ＠界があるも、本発明によれば回避できる◎すなわ
ち、ＩＡ状の半導体チップ上Ｏｗｈ極間隔は０２閣Ｓｍ
であ）、さらに細小化される傾向にある・それゆえ金ワ
イヤの圧着変ｍ部位の長さはワイヤポン〆の精ｆ１にど
亀考慮すると０１■程度しかとれｔｈｅ第６図に示すよ
うに、金ワイヤのループ形状が変形して半導体チップの
端部中リードフレームのアイランド部との短絡を防ぐ九
めに、リードフレームの夷へ０，４閣１１度のとζろへ
ポンディングしている。According to ζO Hatsu@, they are trying to solve the problem of oxidation and dirt on a part of the lead frame surface by increasing the bonding area with the gold 9-ear to improve the stitch mo bonding force. In addition, although there is a t@ field, which is caused by an increase in both sides of the tip of the gold wire crimping tool, as described next, this can be avoided according to the present invention. Owh pole spacing is 02 kaku Sm
Therefore, the length of the crimping deformation part of the gold wire is only about 01■, considering the precision f1 of the wire pong, as shown in Figure 6. In order to prevent the gold wire loop shape from deforming and shorting the edge of the semiconductor chip with the island part of the lead frame, it is bonded to the edge of the lead frame at an angle of 0.4 degrees and 11 degrees. .

これではリードフレーム上に圧着変形され１に％／％金
ワイヤが３／４＠度残ってしまう。まえ、嬉１０位置の
ボンデインダ用の開口部が大暑＜１１、非鹸化性ないし
還元性の雰囲気中リードフレームの押さえに悪影響があ
る。In this case, 3/4 of the gold wire remains on the lead frame due to pressure deformation. First, the opening for the bonder at the 10th position is very hot <11, which has an adverse effect on holding the lead frame in a non-saponifiable or reducing atmosphere.

次に、リードフレームの搬送部のＨｚｏ位置で加圧、圧
着するので失意速度を損じ１に一利点がある。これ紘同
−位置てポンディングと、加圧、圧着を施すようにする
と、生産能力が２／３＠１ｍ低下してしまうデータから
明らかである。Next, since pressure is applied and crimped at the Hzo position of the lead frame conveyance section, the speed of failure is reduced, and 1 has an advantage. It is clear from the data that if pounding, pressurization, and crimping are performed at the same location, the production capacity will decrease by 2/3 @1 m.

まえ、加圧治具に平端部を設は変形されｔｋい部分の金
ワイヤ紘斜面部で保護される丸め、荷重を増加しても金
ワイヤに対して圧潰過度に陥ることが１にい利点がある
。すなわち、第１０位置で施されるｌンディンダ荷重よ
〉も大きい荷重が安全に印加できる。The first advantage is that the flat end of the pressurizing jig is protected by the sloped part of the gold wire that is deformed, and even if the load is increased, it will not collapse excessively against the gold wire. There is. That is, a load larger than the load applied at the tenth position can be safely applied.

４　　ｍＷｉＯ簡単な説明 第１図紘従来Ｏボールステッチポンディンダを説明する
丸めの図（ａ）は上聞図％　ｒｉａ　（ｂ）は断ｍｌＩ
。4 mWiO Brief explanation Figure 1 Hiro A rounded diagram explaining the conventional O ball stitch pondinda (a) is a rounded diagram % ria (b) is a cut mlI
.

第２図社ポンディングｗＡｔ−説−する丸めの断ｓｉｉ
ｗＪ。Fig. 2 Shaponding wAt-theory-rounding cut sii
wJ.

嬉３図以降はこ０＠ｌ１１０１　ｌｌ！論例にかか）、
第３図はＩンデイング装置における位置を示す上面図、
＄１４８１は加圧機構の加圧治具を示すｇ　（ａ）は斜
視図、１１（ｂ）は断面図、１１５図は加圧状態を示す
断面図、第６図はダンディングにおける寸法とワイヤＯ
変濠を示す断面図である・ １　　　　　半導体チップ ２　　　　　半導体チップ０１１極 ３　　　　　　リードフレーム ４　　　　　　金ワイヤ（ポンディングワイヤ）４ｍ　
　　　　　　リードフレームと金ワイヤとＯ圧着部６　
　　　　圧着工具 ７　　　　　　リードフレーム搬送部 ７ｍ　　　　　　　リードフレーム搬送部の第４０位置
７ｂ　　　　　　　９−ド７レーム搬送部の第２の位置
８　　　　　加圧治具 ８ｍ　　　　　　加圧治具の平端部 ｓｂ　　　　　　加圧治具の斜面図 代環人　弁麿士　　井　上　−男 第　　４　　　ｆｉ　　　　　　　　　　　、ａ）ｔｂ
＞ 第　　５　　図 第　　６　　図 ム Ｄ、μ＃ＩＷＬAfter the happy 3rd figure, this is 0 @ l1101 ll! example),
FIG. 3 is a top view showing the position in the indexing device;
$1481 shows the pressure jig of the pressure mechanism g (a) is a perspective view, 11 (b) is a sectional view, 115 is a sectional view showing the pressurized state, and Fig. 6 is the dimension and wire in the danding O
It is a cross-sectional view showing a variable moat. 1 Semiconductor chip 2 Semiconductor chip 011 pole 3 Lead frame 4 Gold wire (ponding wire) 4m
Lead frame, gold wire and O crimping part 6
Crimping tool 7 Lead frame transport section 7m 40th position 7b of lead frame transport section 2nd position 8 of 9-D 7 frame transport section Pressure jig 8m Flat end portion sb of pressure jig Slanted view of pressure jig Daikanjin Benmaroji Inoue - Male 4th fi, a) tb
> Figure 5 Figure 6 MuD, μ#IWL

Claims (1)

【特許請求の範囲】[Claims] 銅系Ｏ嵩材てなる雫−ド７レームに半導体チップを！ク
ントシ、ついでボールステッチボンディング法によりワ
イヤボンディンダを施す半導体装置ＯＩｌ造Ｋ＞いて、
リード７レー五に対しボンディングワイヤをボンディン
グし九のち、こ０ボンデイングされた接合部を押圧する
ことを特徴とする半導体装置の製造方法。Semiconductor chip on drop 7 frame made of copper-based O-bulk material! Next, the semiconductor device is manufactured using wire bonding using the ball stitch bonding method.
1. A method for manufacturing a semiconductor device, which comprises bonding a bonding wire to a lead (7) and then pressing the bonded joint.
JP57019544A 1982-02-12 1982-02-12 Manufacture of semiconductor device Pending JPS58138041A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57019544A JPS58138041A (en) 1982-02-12 1982-02-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57019544A JPS58138041A (en) 1982-02-12 1982-02-12 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS58138041A true JPS58138041A (en) 1983-08-16

Family

ID=12002252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57019544A Pending JPS58138041A (en) 1982-02-12 1982-02-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS58138041A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61121344A (en) * 1984-11-16 1986-06-09 Matsushita Electric Ind Co Ltd Wire bonding method
JP2013149927A (en) * 2012-01-23 2013-08-01 Sharp Corp Light-emitting device and manufacturing method of the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61121344A (en) * 1984-11-16 1986-06-09 Matsushita Electric Ind Co Ltd Wire bonding method
JP2013149927A (en) * 2012-01-23 2013-08-01 Sharp Corp Light-emitting device and manufacturing method of the same

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