JPS58137991A - Electroluminescent light emitting element - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Background of the Invention] The present invention relates to the structure of a thin film-like ML element that exhibits electronic (ML) emission upon application of a voltage.

Conventionally, thin film IL elements include Mn, Ou, T'b)
.

Zn11 doped with an activator such as A semiconductor light-emitting layer made of ZnB, etc. and an insulating layer of Y, OJ, Teioalk, etc. are combined with a pair of transparent conductive films made of 8nOY, InaOJ, etc. and metal conductive films such as M1. A structure in which it is sandwiched between electrodes is known.

Specifically, on a transparent substrate, (1) transparent conductive film - insulating layer - light emitting layer - insulating layer - metal conductive film, (c) transparent conductive film -
M formed by providing an insulating layer, a luminescent layer, an insulating layer, a transparent conductive film, or 9) a transparent conductive film, a luminescent layer, an insulating layer, and a metal conductive film.
L elements have been developed.

However, in response to the special IkK of the multilayer structure of conventional IIIL devices such as Jin, the IL bulkhead of (1) above has a structure in which the insulating layer is sandwiched between the light emitting layers, so an excessive amount of light is applied to the light emitting layer. Although it has the effect of preventing destruction due to the flow of current and enabling stable operation, voltage is not effectively applied to the light-emitting layer due to the rounding of the capacitance component of the insulating layer, and the light-emitting layer does not emit light. At the start, it was necessary to apply a higher voltage to the IL element than the voltage actually applied to the light emitting layer. Also, regarding the case of the ML element in (g).

It has the same effects and drawbacks as the ML element in (1), except that it uses a transparent conductive film instead of the metal electrode.
It is necessary to apply a higher voltage, but in the case of the IL element 8 and 0), only one insulating layer is used, so it is difficult to apply a voltage effectively to one light emitting layer, but on the other hand, it emits light. Excessive current flows through the layer.

For this reason, the light emitting layer is easily destroyed and stable operation is difficult to obtain.

Although the structure in which the light emitting layer is sandwiched between the insulating layers RC is stable in operation, it is necessary to apply a higher voltage than necessary9. Further, a structure using only one insulating layer can emit light at a low voltage, but has the disadvantage of unstable operation.

In any case, the conventional RLJL child has serious drawbacks.

[Summary of the invention]

The present inventor has conducted studies to overcome the drawbacks of the previous 11 light-emitting elements, and as a result, has developed a three-layer sandwich structure in which one light-emitting layer is made up of a transparent conductive film. This makes it possible to protect the light-emitting layer and prevent excessive current from flowing, and to lower the driving voltage without applying more voltage than necessary to the light-emitting layer. In other words, the thin film 11tL device according to the present invention is characterized in that a laminate consisting of a transparent conductive film, a light-emitting layer, and a transparent conductive film is provided on a transparent substrate. There is.

By adopting a structure in which the light-emitting layer is sandwiched between transparent conductive films, an In element that is stable in operation, can be driven at low voltage, and can emit high-intensity light is provided. , an IL display panel exhibiting high contrast can be obtained, and an elL@element element can be realized that can be driven even with a direct current voltage without an insulating layer.

[Specific description of the invention]

The transparent conductive film and light emitting layer used in the present invention include:
Any compound known so far can be used), and any known thickness and manufacturing method of the thin film in the structure of the IL element can be used. Also, m
Depending on the use of the L light-emitting element, a layer of transparent conductive film, light emitting layer, and transparent conductive film may be appropriately provided with a metallic luster film, a transparent film, or an optical fiber.

Hereinafter, some embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto.

#! /The figure shows the structure of a thin film 1b starter element with one @#4.

A transparent conductive film, a discovery layer J, and a transparent conductive film are provided on a transparent substrate l made of glass, transparent glass film, or the like. a-pulling conductive film 1 and transparent conductive film,
The experiment works with a pair of electric currents and ru・'J! I'l'O (indium-
Tin oxide), tin oxide (8nO□), indium oxide (In, O,), etc. are used. As for the party members, In1l: Ous! In! I: Ou:
OX, In8: Tb1s-ZnB: Mn,
Zn8@: Ding by36 Ruiha ZnJiie: Mn
Compounds such as these are used depending on the purpose, such as the color of the emitted light.

Next, a method for manufacturing an IL element according to the present invention will be explained.

Vacuum evaporation, sputtering or 0V on transparent substrate
A) A transparent conductive film JV is deposited on the transparent conductive film 1 by a method such as a vacuum evaporation method, a sputtering method, or a zero map method.
A transparent conductive film 4Av is deposited on the 0 and 1 light emitting layer J, which is deposited to the order of .mu., by a vacuum evaporation method, a sputtering method, an Ovp method, or the like. As described above, a thin film IL light emitting device is manufactured.

The thin 111L element according to the present invention is secured by sandwiching a multi-light layer between the resistance components of the transparent conductive film, which prevents excessive current from flowing and reduces wasted driving voltage. The dynamic voltage can be increased by applying it to the light emitting layer.

Since there is no insulating layer in the front, it is possible to drive using the iris voltage.

Modified embodiments of the present invention are shown in Figure A, Figure 3 and Reference Figures.

The 11 light-emitting elements shown in Figure 1 reflect light emitted in the direction opposite to the transparent substrate by pasting a metallic luster film on a transparent conductive film on the opposite side of a transparent substrate such as glass. One purpose of this is to increase the luminance of light emitted from a transparent substrate. In this case, since the metallic luster film is not used as an electrode, it is not necessary to provide it as a thin film by vapor deposition or sputtering. You can create a chest using a method such as

In Figure 3, black light absorption M4' is shown in the metallic luster film glue.
This IL element has a contrast between a light-emitting point and a non-light-emitting point. It is particularly effective as an electroluminescent spray, as it can provide a clear display even under a mound with a high J# side and a bright surface.

In addition, FIG. 3 shows the transparent groove conductive film pK black conductive j [l' attached to the transparent groove conductive film i on the t-plane of the IL collector that was prepared in FIG. 3, and this black groove 11 film is It has the functions of the transparent groove 11LpIi and the black light absorption film 6. In this case as well, it is difficult to obtain a display exhibiting high contrast.

Note that in the IL elements shown in FIGS. 1 and 3, an adhesive [if used to attach a metallic luster film or a black light absorbing film, this adhesive is transparent after solidification] is used.
It is not an insulating material, and it is also an adhesive V.
If not used, the black light absorbing film must have insulating properties.

[Brief explanation of drawings]

FIG. 1 is a diagram showing the structure of a thin film electroluminescence (IIt) light emitting device according to the present invention, and FIGS. ...Transparent substrate, J...Transparent conductive M (electrode), J...
・Light-emitting layer, etc. Transparent conductive II (electrode),! ...Gold 1s glossy film, 6...Black light absorption film, Tsu...Black conductive 1 [! (electrode).

Claims (1)

[Claims] 1. An electronic net sense device comprising: a laminate consisting of a transparent conductive film, a light-emitting layer, and a transparent conductive film on a transparent substrate.