JPS58134491A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS58134491A
JPS58134491A JP1781382A JP1781382A JPS58134491A JP S58134491 A JPS58134491 A JP S58134491A JP 1781382 A JP1781382 A JP 1781382A JP 1781382 A JP1781382 A JP 1781382A JP S58134491 A JPS58134491 A JP S58134491A
Authority
JP
Japan
Prior art keywords
substrate
type
layer
groove
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1781382A
Other languages
Japanese (ja)
Inventor
Takashi Sugino
隆 杉野
Kunio Ito
国雄 伊藤
Masaru Wada
優 和田
Yuichi Shimizu
裕一 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1781382A priority Critical patent/JPS58134491A/en
Priority to US06/357,086 priority patent/US4520485A/en
Publication of JPS58134491A publication Critical patent/JPS58134491A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Abstract

PURPOSE:To obtain a laser having polarizing directions of different emitting lights from both ends of a cavity by forming a clad layer of the same conductive type as a substrate, N or P type active layer and a clad layer of different conductive type from the substrate on one conductive type semiconductor substrate formed with a groove on the surface with varying width. CONSTITUTION:A groove 11a which has an edge formed at one side in (011) direction and at the other oblique at 30 deg. to the (011) direction is formed in depth of approx. 1.5mum is formed on the surface of an N type GaAs substrate 11 having (100) plane. Then, an N type Ga0.5Al0.4As clad layer 12, a nondoped Ga0.95Al0.05As active layer 13, a P type Ga0.6Al0.4As clad layer 14 and an N type GaAs electrode forming layer 15 are continuously epitaxially grown in liquid phase on the entire surface including the groove. Subsequently, a Ti- Pt-AuP side electrode 17 is covered on the layer 15, the substrate is reduced in thickness to approx. 100mum, and an N type side electrode 18 made of AuGeNi is mounted on the back surface of the substrate.

Description

【発明の詳細な説明】 本発明は半導体レーザー装置に関する。[Detailed description of the invention] The present invention relates to a semiconductor laser device.

本発明者らは、すでに第１図に示すように段差を有する
基板上に構成するレーザーを提案した（特開昭５６−１
１０２８５号公報）。ここでは、この種のレーザーはｎ
型Ｇ　ａ　Ａ　ａ基板１表面に段差を設け、その土にｎ
型Ｇａ　　　ＡＩ　　Ａｓクラッド１−７　　　　Ｆ 層２、ｎ又はｐ型Ｇａ、−ｘＡ／、Ａ４性層３、ｐ型Ｇ
ａ１．ｔ　Ａｌ、ｔ　Ａｌｌクラッド層４、そしてｎ型
ＧａＡｓオーミック電極形成層６を設け、段差部直上で
ストライプ状に表面から亜鉛を拡散し、ストライブ状の
電極６を形成し、又、基板側にもオーミック電極７，８
を形成して作製される。The present inventors have already proposed a laser constructed on a substrate with steps as shown in FIG.
10285). Here, this kind of laser is n
Type G a A A step is provided on the surface of the substrate 1, and n
Type Ga AI As clad 1-7 F layer 2, n or p type Ga, -xA/, A4 layer 3, p type G
a1. A tAl, tAll cladding layer 4, and an n-type GaAs ohmic electrode forming layer 6 are provided, and zinc is diffused from the surface in a stripe form just above the step part to form a stripe-like electrode 6. Also ohmic electrodes 7, 8
It is made by forming.

前記構成の半導体レーザー装置は基板１０段差部上の活
性層３が傾斜した部分でスポット状の基本横モード発振
を行なうという特徴を有している。The semiconductor laser device having the above structure is characterized in that the active layer 3 on the stepped portion of the substrate 10 performs spot-like fundamental transverse mode oscillation at the inclined portion.

発振光は通常、半導体レーザーの発振部の活性層に平行
の偏光であり、前記レーザーにおいては活性層３が傾い
ているため基板の平坦部に対して傾いた偏光が得られる
。又、半導体レーザーの両キャビティ一端面で同一形状
を有するレーザーにおいては偏光も同一方向になる。The oscillated light is normally polarized light parallel to the active layer of the oscillation part of the semiconductor laser, and since the active layer 3 in the laser is tilted, polarized light tilted with respect to the flat part of the substrate is obtained. Further, in a laser having the same shape at one end face of both cavities of the semiconductor laser, the polarization is also in the same direction.

本発明は、前記構成の半導体レーザー装置とは異な９半
導体レーザーの両キャビティ一端面からの出射光が、互
いに異なった偏光方向を有する新規な構造の半導体レー
ザーを提供するものである。The present invention provides a semiconductor laser having a novel structure in which light emitted from one end face of both cavities of nine semiconductor lasers different from the semiconductor laser device having the above structure has different polarization directions.

以下図面をもとにして本発明の実施例における半導体レ
ーザー装置について説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor laser device according to an embodiment of the present invention will be described below with reference to the drawings.

基板１１上に第２図（、）のように溝幅の変化した溝１
１ａを設け、この基板１１の表面に液相エピタキシャル
法により、第１層クラッド層１２、第２層活性層１３、
第３層クラッド層１４、第４層電極形成層１６を連続成
長する。第２図（ｂ）に示すよ−うに、活性層１３は、
溝１１ａの溝幅の狭い部分１１ｂで三カ月状になり、溝
幅の広い部分１１ｃでは段差部付近で活性層は傾斜する
。前記溝幅の狭い部分１１ｂと広い部分１１ａとの周形
状を有する活性層の直上に、第２図（ｃ）に示すように
ストライプ電極１６を形成し、それに垂直にキャビティ
一端面を鏡面に設けてレーザーチップとする。Grooves 1 with varying groove widths are formed on the substrate 11 as shown in Figure 2 (,).
1a, and a first cladding layer 12, a second active layer 13, a first cladding layer 12, a second active layer 13,
A third cladding layer 14 and a fourth electrode forming layer 16 are successively grown. As shown in FIG. 2(b), the active layer 13 is
The active layer has a crescent shape in the narrow part 11b of the groove 11a, and the active layer is inclined near the stepped part in the wide part 11c. As shown in FIG. 2(c), a stripe electrode 16 is formed directly above the active layer having a circumferential shape of a narrow groove portion 11b and a wide groove portion 11a, and one end surface of the cavity is provided perpendicularly thereto to have a mirror surface. and make it into a laser chip.

このような構成の半導体レーザー装置においては、基板
１の溝幅の狭い部分１１ｂでは、活性層１３が図示する
ように三カ月形状、すなわち中央部で膜厚が厚く、周外
側へいくに従って薄くなっている。又、溝幅が広い細分
１１ｃでは、段差部で傾斜した活性層も傾晶で膜厚が厚
く、平坦部および折れ曲がり部で傾斜部より薄くなって
いる。In the semiconductor laser device having such a configuration, in the narrow groove width portion 11b of the substrate 1, the active layer 13 has a three-moon shape as shown in the figure, that is, the film thickness is thick at the center and becomes thinner toward the outside of the periphery. ing. In addition, in the subdivision 11c where the groove width is wide, the active layer which is inclined at the stepped portion is also tilted and has a thick film thickness, and is thinner at the flat portion and the bent portion than the inclined portion.

このため、ストライプ　　、下で発生した光は活性層の
実効屈折率の高い膜厚の厚い部分に閉じ込められ、キャ
ビティ一端の鏡面間を伝搬する。溝部の狭い部分の幅お
よび深さを最適化することにより、活性層に基本横モー
ド発振を得る活性層の形状を作り出すことができる。Therefore, the light generated under the stripe is confined in the thick part of the active layer with a high effective refractive index, and propagates between the mirror surfaces at one end of the cavity. By optimizing the width and depth of the narrow portion of the groove, it is possible to create an active layer shape that provides fundamental transverse mode oscillation in the active layer.

前記本発明の実施例における半導体レーザー装置におい
ては、溝幅の狭い方のキャビティ一端からの発振光は基
板表面と平行方向の偏光であり、反対側の活性層が傾斜
したキャビティ一端面から出るビームの偏光方向は、溝
幅の狭い方のキャビティ一端からでるビームの偏光方向
と異なる。In the semiconductor laser device according to the embodiment of the present invention, the oscillation light from one end of the cavity with the narrower groove width is polarized in a direction parallel to the substrate surface, and the oscillation light is polarized in the direction parallel to the substrate surface, and the beam emitted from one end surface of the cavity where the active layer on the opposite side is inclined. The polarization direction of the beam is different from that of the beam exiting from one end of the cavity with the narrower groove width.

この新しい構造す有する半導体レーザーについてのさら
に具体的な実施例を以下に説明する。ここではＧａＡｓ
−ＧａＡ／Ａｓ半導体レーザーについて説明する。More specific examples of the semiconductor laser having this new structure will be described below. Here, GaAs
- A GaA/As semiconductor laser will be explained.

ｎ型Ｇ　ａ　Ａ　ａ基板１１の（１００）面上に第２図
（４）に示すように轡１１ａを形成する。溝１１ａの、
′（ エツジの片方は〈０１１〉方向にとり、他方はそれに対
して３ｏ０１□：：□、：：：、傾ける。A lining 11a is formed on the (100) plane of the n-type GaAa substrate 11 as shown in FIG. 2(4). of the groove 11a,
′( One edge is taken in the <011> direction, and the other edge is tilted 3o01□::□, :::, against it.

溝１１ａの深さＤ＃１．ｓμｍである。この基板１１上
に液相エピタキシャルｉによｐｎ型Ｇａ、６Ａｌ！。、
４Ａ８クラッド層１２、ノンドープ”０．９６ＡＩ０．
０５”活性層１３、ｐ型Ｇａｏ　、ｅＡｌｏ　、４Ａ＠
クラッド層１４、ｎ型Ｇ　ａ　Ａ　ｓ電極形成層１６を
連続成長する。成長の狭い方の溝幅Ｗ１は６μｍである
。Depth D#1 of groove 11a. It is sμm. On this substrate 11, pn type Ga, 6Al! . ,
4A8 cladding layer 12, non-doped "0.96AI0.
05” active layer 13, p-type Gao, eAlo, 4A@
A cladding layer 14 and an n-type GaAs electrode forming layer 16 are successively grown. The narrower groove width W1 for growth is 6 μm.

第１層Ｇａｏ　、ｅＡｌｏ　、４ＡＩ８クラッド層１２
の厚さは平坦部で０．３μｍである。第２層”０．５”
Ｏ，Ｏ♂８活性層１３は平坦部で０．０８μｍ、溝幅の
狭い方での三カ月部で０．１μｍ１溝幅の広い方の傾斜
した部分で０．１μｍ程度である。第３層”０．６Ａ１
０，４Ａｓクラッド層１４は平坦部で１μｍ１第４層Ｇ
ａＡａ電極形成層１６は平坦部で１μｍである。1st layer Gao, eAlo, 4AI8 cladding layer 12
The thickness of the flat part is 0.3 μm. 2nd layer "0.5"
The O, O♂8 active layer 13 has a thickness of 0.08 .mu.m at the flat part, 0.1 .mu.m at the 3-month part at the narrower groove width, and about 0.1 .mu.m at the inclined part at the wider groove width. 3rd layer"0.6A1
The 0,4As cladding layer 14 has a thickness of 1 μm in the flat part.
The aAa electrode forming layer 16 has a flat portion of 1 μm.

溝幅の狭い部分の直上で＜０１１＞方向に幅６μｍのス
トライプ状に亜鉛拡散を行ない、拡散フロントが第３’
　Ｇａｏ　、ｅＡ７’ｏ　、４ＡＩＩクラッド層１４に
達する。次に第４層ＧａＡｓ５電極形成層１６の表面上
にＴ　ｉ　−Ｐ　ｔ−Ａｕを付け、Ｐ側オーミック電極
１７を形成する。ウェハーが１００μｍ程度になるまで
基板を薄くした後、基板側にＡｕＧｅＮｉ　を付け、合
金処理を行ない、ｎ側オーミック電極１８を形成する。Directly above the narrow part of the groove, zinc is diffused in the <011> direction in a stripe shape with a width of 6 μm, and the diffusion front is at the 3'
Gao, eA7'o, 4AII cladding layer 14 is reached. Next, Ti-Pt-Au is applied on the surface of the fourth GaAs5 electrode forming layer 16 to form a P-side ohmic electrode 17. After thinning the substrate until the wafer has a thickness of about 100 μm, AuGeNi is attached to the substrate side, alloying is performed, and the n-side ohmic electrode 18 is formed.

次にへき開によりキャビティーを作り、半導体レーザー
装置とする。Next, a cavity is created by cleavage to form a semiconductor laser device.

このようにして構成したレーザーダイオードは基本横モ
ード発振を行ない、両キャビティ一端面１１ｂと１１ｃ
より取り出される２つのビーム偏光方向に１６０の角度
差を生じた。The laser diode configured in this manner performs fundamental transverse mode oscillation, and the two cavities have one end surface 11b and 11c.
An angular difference of 160 was created between the two beam polarization directions taken out.

ここで示したＧａＡｓ−ＧａＡ７ｉ’Ａｓ系のように発
振光を吸収する基板を使用する際には、第３図の他の実
施例に示すように溝幅の狭い部分で第１層の表面−を溝
部で平坦にし、かつ溝部両側の平坦部で第１層１２を薄
くし、活性層１３の溝部以外での光を基板に漏出させる
構造を採ることもげ能となる。When using a substrate that absorbs oscillation light, such as the GaAs-GaA7i'As system shown here, as shown in another embodiment of FIG. It is also possible to adopt a structure in which the active layer 13 is made flat at the groove portion, the first layer 12 is made thinner at the flat portions on both sides of the groove portion, and light leaks to the substrate at areas other than the groove portion of the active layer 13.

基板につけられる溝は溝幅がテーパー状に変化するもの
だけでなく、第４図に示すように溝内部に階段状の折れ
曲がり部を有する形状のものも使用可能である。また、
第６図のような溝の形状にすることも可能である。The groove formed on the substrate can be not only one in which the groove width changes in a tapered manner, but also one in which the groove has a step-like bent portion inside the groove as shown in FIG. 4. Also,
It is also possible to form the groove as shown in FIG.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は段差を有する基板上に構成さｔｔだ本発明者ら
がすでに提、案した半導体レーザーの断面図、第２図（
−）は本発明の実施例における半導体レーザー装置の基
板の斜視図、第２図（ｂ）　、　（ｃ）は上記基板上に
結晶成長を行ない作成した本発明の実施例における半導
体レーザー装置の斜視図、第３図は本発明の他の実施例
における半導体レーザー装置の斜視図、第４図、第６図
は他の形状の溝を有する基板の実施例を示す斜視図であ
る。 １１　、、、、、、ｎ型ＧａＡｓ基板、１２　、、、、
、、　ｎ型Ｇａ１−ｘＡ／！ＡＪクラッド層１１３・・
・・・・ノンドープＧ　ａ　１ｙ　Ａ　ｌ　ｙ　Ａ　ｓ
　　活性層、１４．、、、、、　　ｐ型Ｇａ　　　ｔ　
Ａｌ　／　Ａｓクラッド層、１５　、、、、、、　ｎ型
１−ｘ　　　　　ｘ Ｇ　ａ　Ａ　ｓ電極形成層、１６　、、、、、、亜鉛拡
散領域、１７・・・・・・ｐ側オーミック電極用金属膜
１１８・・・・・・ｎ側オーミック電極用金属膜　（ｙ
＜ｘ、ｘ’）。 代理人の氏名　弁理士　中　尾　敏男　ほか１名１１図 １１２図 １ｃ： 第　４−図Figure 1 is a cross-sectional view of a semiconductor laser constructed on a substrate with steps, which the present inventors have already proposed, and Figure 2 (
-) is a perspective view of a substrate of a semiconductor laser device according to an embodiment of the present invention, and FIGS. 3 are perspective views of a semiconductor laser device according to another embodiment of the present invention, and FIGS. 4 and 6 are perspective views showing embodiments of a substrate having grooves of other shapes. 11 , , n-type GaAs substrate, 12 , , ,
,, n-type Ga1-xA/! AJ cladding layer 113...
...Non-doped G a 1y A ly A s
active layer, 14. ,,,, p-type Ga t
Al/As cladding layer, 15, n-type 1-x Ga As electrode forming layer, 16, zinc diffusion region, 17...for p-side ohmic electrode Metal film 118...Metal film for n-side ohmic electrode (y
<x, x'). Name of agent: Patent attorney Toshio Nakao and one other person11Figure 112Figure 1c: Figure 4-Figure

Claims (1)

【特許請求の範囲】[Claims] 一導電型を有し表面に溝幅が変化している溝が形成され
た半導体基板上に、この基板と同一導電型のクラッド層
、ｎ型またはｐ型の活性層、前記基板とは異なる導電型
のクラッド層を含む各層が形成されたことを特徴とする
半導体レーザー装置。A cladding layer of the same conductivity type as the semiconductor substrate, an n-type or p-type active layer, and a conductivity different from the substrate A semiconductor laser device characterized in that each layer including a mold cladding layer is formed.
JP1781382A 1981-03-17 1982-02-05 Semiconductor laser device Pending JPS58134491A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1781382A JPS58134491A (en) 1982-02-05 1982-02-05 Semiconductor laser device
US06/357,086 US4520485A (en) 1981-03-17 1982-03-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1781382A JPS58134491A (en) 1982-02-05 1982-02-05 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS58134491A true JPS58134491A (en) 1983-08-10

Family

ID=11954171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1781382A Pending JPS58134491A (en) 1981-03-17 1982-02-05 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS58134491A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998056085A1 (en) * 1997-06-06 1998-12-10 Telefonaktiebolaget Lm Ericsson Waveguide

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998056085A1 (en) * 1997-06-06 1998-12-10 Telefonaktiebolaget Lm Ericsson Waveguide

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