JPS5813009A - Method and device for manufacturing surface acoustic wave element - Google Patents
Method and device for manufacturing surface acoustic wave elementInfo
- Publication number
- JPS5813009A JPS5813009A JP11089781A JP11089781A JPS5813009A JP S5813009 A JPS5813009 A JP S5813009A JP 11089781 A JP11089781 A JP 11089781A JP 11089781 A JP11089781 A JP 11089781A JP S5813009 A JPS5813009 A JP S5813009A
- Authority
- JP
- Japan
- Prior art keywords
- acoustic wave
- piezoelectric
- piezoelectric wafer
- surface acoustic
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 238000005530 etching Methods 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 239000010409 thin film Substances 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 9
- 238000001259 photo etching Methods 0.000 abstract description 3
- 230000005616 pyroelectricity Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 22
- 238000000576 coating method Methods 0.000 description 17
- 239000011248 coating agent Substances 0.000 description 16
- 239000010408 film Substances 0.000 description 11
- 238000010791 quenching Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 210000000554 iris Anatomy 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 101100108644 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) alo-1 gene Proteins 0.000 description 1
- 241000219094 Vitaceae Species 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 235000021021 grapes Nutrition 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
本発嘴は弾性表面液素子Ｏ製造方法及び七〇＠ｉ！に係
）、轡に多数の弾性ｍ１ｉｉ流素子を写真蝕刻１法によ
〉圧電ウェファ上に形成する製造方法及びその侠置く関
するものであるｅ
弾ａｍ爾波素子には弾性表面波フィルタ素子。[Detailed description of the invention] The present beak includes a method for manufacturing an elastic surface liquid element O and 70@i! This relates to a manufacturing method for forming a large number of elastic flow elements on a piezoelectric wafer by a photolithography method, and its method.The elastic wave elements include surface acoustic wave filter elements.
−＊＊＊波共振子素子などが１、いずれ％Ｌ１丁−偽Ｌ
ＩＮ塾０．．水晶、七ツ５ツタスなどからなる圧電ウェ
ファ上にアル々エクムなどの金属被膜を所定厚に一着衣
と９手段によ）被着形成したのち、この金属被膜に写真
蝕刻１法などを利用して参数の弾性＊Ｗ波素子を形成し
たのち、各素子を分割して使用するようになっている・
これｂ弾性ｌＩ！爾波素子管形成する圧電ウェファとし
では前述のように種々のものが使用されているが、との
うちＬＩＮｂＯｓは電気機械給金係数が大で且つ貴意性
でｈ１丸め高性能弾性表面波素子ｏ１４造に多く用−ら
れている・
然るにこＯＬＩＮｂＯｓは電気機械締金係数が大である
ばか）ではな（焦電性も大き−ため、ＬＩＮＩｅＯｓク
エファから弾性表面波素子を形成する工ＩＩＫ行なわれ
為加熱冷却工＠０９に表′ｒＭに電荷が発生する。- **** wave resonator element etc. is 1, eventually %L1 piece - false L
IN Juku 0. ．． After forming a metal coating such as Alto Ecum to a predetermined thickness on a piezoelectric wafer made of crystal, 75 tsutas, etc., using a method such as photo-etching 1, etc. After forming a number of elastic * W wave elements, each element is divided and used. This b elastic lI! As mentioned above, various types of piezoelectric wafers are used to form the wave element tube, but among them, LINbOs has a large electromechanical feed coefficient and is highly valuable, so it is suitable for h1 rounding high performance surface acoustic wave elements o14. However, since OLINbOs has a large electromechanical clamping coefficient (it has a large pyroelectric property), it is difficult to conduct a process to form a surface acoustic wave element from LINIeOs. A charge is generated on the table 'rM in the heating and cooling process @09.
？−Ｏ表面電荷は例えば菖ｔｇＯように圧電ウェファ（
１） ０−主面上にアルミニウムなどＯ金属被膜（２）
を蒸着したのち、ホットプレート（萄上に載置して加熱
する工程において、ξのホットグレート（３）と金属被
膜（２）の端部（２烏）間に放電（４）を起しえ〉、金
属被膜（匂にはζ）（Ｓ）を吸着する場合があ）、次工
程であるフォトレジスト膜の形成工程での歩留を低下さ
せたり、圧電ウェファ（１） ０端部近傍を軍ＪＬＫす
る原因となっている。? -O surface charge is caused by a piezoelectric wafer (for example, irises tgO).
1) O metal coating such as aluminum on the 0-main surface (2)
After vapor-depositing, in the step of heating by placing on a hot plate (on the grapes), an electric discharge (4) is generated between the hot plate (3) of ξ and the end (2) of the metal coating (2). 〉, the metal film (smell may adsorb ζ) (S) may reduce the yield in the next process of forming a photoresist film, or the vicinity of the 0 end of the piezoelectric wafer (1) may be This is the cause of the military JLK.
また、との圧電ウェファが蕾電していると７オトレジス
ト膜Ｏ形成工程後のぺｉキンダニ程、露光工程、エツチ
ング工程などにおいて、ウェファがこれら工１１Ｋ使用
する装置の金属部分に静電吸着し、これら工程の操作が
困１１になる問題があった・
このため従来は第２図Ｏように圧電クエンチ（１）上の
金属被膜（乃を上にして平坦な金属板（勾玉に煩絡片（
７）によ）固定させると共に圧電ウェファ（１） ０表
面の金属被膜（２）金金属板（＠）Ｋ短編させることに
よ）１１１１１電荷を防止しホラ）プレート（３）など
に載置し、べ一命ンダエ１１ｔ行なって−る０が現状で
番る。In addition, if the piezoelectric wafer is electrostatically charged, the wafer will electrostatically adsorb to the metal part of the equipment used in these processes during the peeling process, exposure process, etching process, etc. after the photoresist film O formation process. , there was a problem that the operation of these processes was difficult. For this reason, conventionally, as shown in Fig. (
7)) and fix the piezoelectric wafer (1) 0 metal coating on the surface (2) gold metal plate (@)K by shortening) 11111 to prevent electric charges, and then place it on a plate (3) etc. , 0, which is currently running, is the current count.
然るにこＯような方法によると、金属板（句と圧電クエ
ンチ（１） ０１に爾が充分Ｋｌ！触し難いので表面電
荷を完全ＫＩＩＥ）除くことができないし、まえ金属被
膜（＝及びフォトレジスト膜の一部に欠陥が生し易く、
製造歩留）も悪くなる欠点があった・ζＯ対策として、
嬉３図に示すように圧電ウェファ（ｉ）ｏ表面と裏１１
に！工程でアルミニウムなどＯ金属被膜 （ｚｔ） 、
（ｚｔ）を被着形成する方法が考えもれて−るが、こ
の方法は圧電クエンチ（１） （０表面と裏面に２工程
でアルζニウムなどの金属被ＩＩ （２，）（−）を被
着形成するため、製造工程が長く、また圧電クエンチｏ
＊ＴＭの電極形成のための金属被膜（２ｓ）Ｋ自ず中汚
れが発生し易く、こＯような圧電クエンチ（１）から弾
性表面波素子を形成すると、素子として０４Ｐ性１悪く
し易ｉ欠点が番る・本発明は前述しえ従来Ｏ諸欠点に―
みなされえ １“もＯ″ｃＴｏａｔｓ圧電クエ７
アに一工りで焦電性によるウェファ側壁Ｏ放電や表面に
ほこ）などが吸着することが極めて少な−ようにアルミ
ニウムなどの金属被膜を形成するととができ、この圧電
クエンチから製造歩留よく、品質のよい弾性表面波素子
を得ることが可能な弾性表面波素子Ｏ製造方法及びそＯ
装置を提供することを目的としている・次に本発明の一
実施例を図に従い説明する・先ず初めに第４図のような
所定直径、厚さを有するＬｉＮ１５Ｏｓの単結晶からな
る圧電ウェファａａ’を用意する・次に第５図に示すよ
うにこの圧電ウェファ１の表面（ｌ１１）を鏡面研磨す
ると共に裏１ｊ（山）をｍ＊に仕上げる・゛このような
圧電ウェファａ１）を第６図に示すようにとＯ圧電ウェ
ファ（１１）の直径よ）中子径小１央出部Ｃｕｔ有する
蒸着用プラネタリ−勾玉に圧電ウェファ（１０の裏面（
１１１）の外周部（ｔｔｓａ）が尚接しな一様に載置す
る・次に第７図に示すようにプラネタリ−（２）を蒸着
装置（至）内に導入し、所定真空度まで減圧したのち圧
電ウェファ＠１）の表１ｊ （１１＊）に対設するアル
賓ニウム蒸着源（財）をフィラメント（ハ）によシ加熱
すると、圧電ウェファａｌＯ１！藺Ｑｔ、）、ｍｌｊ
（１１ｍ）こ０１１１ｉｆＫｉｌ接する裏面（ｎ章）の
一部（ｎ□）にアルンニク＾が蒸着するこの蒸着時０雰
囲気の真空度は２ Ｘ １ Ｇ”’Ｔｏｒｒ以下温度は
２００〜３００℃、要用１ｍ締高さ即ちプラネタリ−治
具と裏面との間隔は通常数μ〜数ｌＯ■あればよいが実
用上は数１００Ｊ１〜数■一度が望ましい・
ヒのよ５１に蒸着によ〉第８図に示すように圧電クエン
チ（１１）の表面（ｔｂ）上には弾性表面波素子のイン
ターデジタル電極やダレ−ディング電極形成用に最適な
厚さのアルミニウム被膜（１２１）側ｍ （ｔｔｓ）裏
面の一部には表面（１１１）のアルミニウム被膜（１２
１）より命中薄目のアルミニウム被膜（ｔ２ｍ） 、
（ｔｚｔ）が被着形成される〇
このようにアルミニウム被膜（ｔ２ｓ） 、 （１２ｔ
） 、 （１２ｉ）を着着形成した圧電ウェファ００は
次の工ＩＩＫより主としてアル電具りム被膜（ｔｚｔ）
上にフォトレジスト膜（Ｉ３を形成し、第９図に示すよ
うにホットプレート（至）上に載置しベーキング工程を
行なうコこの場合本実施例のように圧電ウェファＩの裏
［（１１，）の一部にまでアルミニウム被膜（１２ｍ）
を形成するととにより、圧電クエファ＠ＩＯ表面に電荷
が発生してもアル１＝ウム被膜（１＆） ｅ （１２ａ
） ｅ ０２ｍ ）を介してこの電荷がホットプレート
（２）に流れることＫｅ！のでフォトレジスト膜ＵＫｆ
ｉヒ）が付着しぇ〉放電がシこつえ）することがｔｋ％
Ａ、冷却時も同様である０
次に写真蝕刻法を使用して７オ）シジスト膜の露光・現
像・蝕刻を行ない第１０！ＩＫ示すように多数Ｏ弾性表
面波素子６１が形成されるし、ｉえアル１＝ウム被膜Ｑ
ｚｍ）、 （ｔち）は蝕刻工程で除去される◎
次に多数Ｏ弾性表面波素子ＯＩ）を分離すればよ−・本
夾總例のように圧電ウェファＯ表面・側聞及びζＯ＠爾
に隣接する裏面の一部に一工程でアルミニウムなどの金
属被膜を形成することによ）焦電性の大きな圧電基板か
ら弾性＊両波素子ｔＩ１１造する工程においてもζＯ焦
竜゛性によるフォトレジスト膜の形成１穫での歩留％１
ｊＬ好となるし、まえ圧電ウェファの端部近傍における
放電による不実も全くなくなるし、ζＯ金属薄膜Ｏ彫成
は従来Ｏ圧電クエファｏ＠ＩＨｏ金属薄膜の形成時ＫＩ
Ｉ用する菖着用プラネタ菅−を変更することによって春
ｓＫ実施することが可能である。However, with this method, it is impossible to completely remove the surface charge from the metal plate (because it is difficult to touch the metal plate), and the metal film (= and photoresist) cannot be removed completely. Defects are likely to occur in some parts of the film,
There was a drawback that the manufacturing yield (manufacturing yield) also deteriorated.As a countermeasure for ζO,
As shown in Figure 3, piezoelectric wafer (i) o front and back 11
To! O metal coating (zt) such as aluminum in the process,
(zt) has been thought of, but this method involves piezoelectric quenching (1) (2,) (2,) (-) The manufacturing process is long and piezoelectric quenching is required.
*Metal coating (2s) for forming TM electrodes is naturally prone to contamination, and if a surface acoustic wave element is formed from such a piezoelectric quench (1), the element's 04P properties are likely to deteriorate. Defects count - The present invention overcomes the aforementioned drawbacks of the conventional O.
Regarded 1 “MoO” cToats piezoelectric quest 7
It is possible to form a metal coating such as aluminum to minimize adsorption of wafer side wall O discharge due to pyroelectricity and adsorption of dust on the surface. , A method for manufacturing a surface acoustic wave device O that can obtain a surface acoustic wave device of good quality, and the method thereof
・Next, an embodiment of the present invention will be explained according to the drawings. ・First of all, a piezoelectric wafer aa' made of a single crystal of LiN15Os having a predetermined diameter and thickness as shown in FIG.・Next, as shown in FIG. 5, the front surface (l11) of this piezoelectric wafer 1 is polished to a mirror finish, and the back side 1j (mountain) is finished to m*. ・Such a piezoelectric wafer a1) is prepared as shown in FIG. As shown in Figure 1, the back side of the piezoelectric wafer (10) is attached to the planetary magatama for evaporation, which has a core diameter of 1 (small diameter) and a central protrusion cut.
Place the planetary (2) uniformly so that the outer periphery (ttsa) of 111) is still not in contact. Next, as shown in Figure 7, the planetary (2) was introduced into the vapor deposition apparatus (to) and the pressure was reduced to a predetermined degree of vacuum. Later, when the aluminum evaporation source installed opposite Table 1j (11*) of the piezoelectric wafer @1) is heated by the filament (c), the piezoelectric wafer alO1!藺Qt, ), mlj
(11m) Arunnik^ is deposited on a part (n□) of the back surface (chapter n) in contact with this 0111ifKil.During this deposition, the degree of vacuum in the zero atmosphere is 2 x 1 G'''Torr or less, and the temperature is 200 to 300℃, required. The tightening height of 1 m, that is, the distance between the planetary jig and the back surface, is usually from several microns to several 100, but in practice it is preferably from several 100 J to several times. As shown in the figure, on the surface (tb) of the piezoelectric quench (11), there is an aluminum coating (121) side (m) (tts) on the back surface of the optimal thickness for forming interdigital electrodes and daring electrodes of the surface acoustic wave element. Some parts have an aluminum coating (12) on the surface (111).
1) Aluminum coating with a thinner hit (t2m),
(tzt) is deposited 〇 In this way, aluminum coating (t2s), (12t
), (12i) was deposited on the piezoelectric wafer 00, which was mainly coated with Aldentrium coating (tzt) from the next process IIK.
A photoresist film (I3) is formed on the top, and as shown in FIG. 9, it is placed on a hot plate and a baking process is performed. ) Aluminum coating (12m)
Even if a charge is generated on the surface of the piezoelectric Quafer@IO, the Al1 = U film (1 &) e (12a
) e 02m ) that this charge flows to the hot plate (2) Ke! So the photoresist film UKf
It is tk% that the discharge sticks)
A. The same goes for cooling. 0 Next, use the photo-etching method to perform 7 e) exposure, development, and etching of the sydist film. 10. As shown in IK, a multi-O surface acoustic wave element 61 is formed, and I
zm), (tchi) are removed in the etching process ◎ Next, the multi-O surface acoustic wave element OI) is separated - As in this example, the piezoelectric wafer O surface, side surface and ζO Photoresist due to ζO pyro-resistance is also used in the process of fabricating an elastic*double-wave element tI11 from a piezoelectric substrate with large pyroelectric properties (by forming a metal film such as aluminum on a part of the back surface adjacent to the pyroelectric substrate in one step). Film formation yield in 1 harvest %1
The ζO metal thin film O engraving is different from conventional ζO metal thin film formation when forming the piezoelectric wafer O@IHo metal thin film.
It is possible to carry out spring SK by changing the irises wearing planetary tube.
次に本実ＷＡＯ他Ｏ実施例に適応する蒸着用プ２ネタツ
ーｔｊｌｌｔ１図によ）説明する。Next, an explanation will be given with reference to FIG.
則ち、蒸着用プラネタリ一一は圧電ウェファ■の直後よ
＊ａＯ小さな突岨１１）と圧電クエ７アＩＯ直負よ）１
＆０大ｍｅ周縁穣体−を残すようにはｆｆ１ｌｌ状Ｏ！
！Ｉ壽部−を設けである・前記実施例ではアル１＝クム
蒸着ｇ（財）及びアイツメン）（至）を１ケ所に設けた
が、これに限定されるものではなく圧電ウェファａｌの
側聞及びヒの儒両に隣接する裏面の一部に％金属被膜が
被着し鳥ｉように複数側設けてもよいし、ま九プラネタ
リーＯ突山部ｔ２珍＊１＊ｏ辱状も、圧電ウェファＩよ
り径小なほぼ円柱状に限定されるものではなく、圧電ク
エファａｌＯａ厘の一部に金属薄膜が被着し得ｊ１
：ｂｌｌ状！１１１状）７ ｖｓ−＊ｔｋど０Ｂ″１ｉ
ｔ−Ｊｉｉｊ！Ｅｌ、？ 。In other words, the evaporation planetary 11 is immediately after the piezoelectric wafer *aO small ridge 11) and the piezoelectric cube 7a IO direct negative) 1
&0 large me peripheral body - to leave ff1ll-like O!
!・In the above embodiment, the aluminum 1 = cum vapor deposition (G) and AITSUMEN) (TO) were provided in one place, but the invention is not limited to this, and the side surface of the piezoelectric wafer AL is provided. A metal coating may be applied to a part of the back side adjacent to the upper part of the back side, and multiple sides may be provided as shown in the figure. It is not limited to a substantially cylindrical shape with a smaller diameter than the piezoelectric wafer I, and a metal thin film may be adhered to a part of the piezoelectric wafer I. 111) 7 vs-*tkd0B″1i
t-Jiij! El,? .
もよいことは勿論である０Of course it's good too0
【図面の簡単な説明】
ＪＩ１図は焦電特性によ）放電中ごみ０被着が起った状
態の説明図、第２図は従来０電荷短絡構造を示す要部断
面図、ｌｔｓ図は従来の電荷短絡用として両側に金属被
Ｉ［を形成しえ構造を示す断面図、１ｓ４ａＩ７！Ｆｊ
ｌｌＩ第４ａＩは本発明の弾性表面波素子の１１１Ｉｉ
方法〇一実施例を示す図で６９、第４図は圧電クエ７ア
Ｏ斜視図、第５図は圧電クエ７アの表両及び裏面を仕上
げえ状態を示す断面図、第６図は蒸着用プラネタリ−に
圧電クエ７アを載量し良状態を示す断面図、菖７図は蒸
着工Ｓｔ示す断面図、第８図は金属被膜０形成状態管示
す断面図蔦嬉９図はフォトレジスト膜を形成しベーキン
グを行なって−る状ｓＩを示す断ｗ図、第１０図は圧電
クエ７１に多数Ｏ弾性表面波素子を形成した状態を示す
斜視図１第１１図は本発明Ｏ弾性表面波素子の製造方法
の他の実施例に適応するプラネタリ−に圧電クエ７アを
載量し免状態管示す断面図である。
１ 、１１・・・圧電クエ７ア
２．２１．２置、 １２． 、１２奮、１２．・・・ア
ル１＝ウム被膜Ｓ 、 ２ト−・ホットプレート ７・
・・短絡片２２ 、４２・・・蒸着用プラネタリ−２１
、４１・・・央山部
側人知士井上−男[Brief explanation of the drawings] Figure JI1 is an explanatory diagram of the state in which zero dust adhesion occurs during discharge (due to pyroelectric characteristics), Figure 2 is a sectional view of the main part showing the conventional zero charge short circuit structure, and the lts diagram is 1s4aI7! is a cross-sectional view showing a conventional structure in which metal coatings I[ are formed on both sides for charge short circuiting. Fj
llI 4aI is 111Ii of the surface acoustic wave element of the present invention
Figure 4 is a perspective view of the piezoelectric square 7A O, Figure 5 is a sectional view showing the finished state of both front and back surfaces of the piezoelectric square 7A, and Figure 6 is a diagram showing an example of method 〇. Figure 7 is a cross-sectional view showing a good state of piezoelectric square 7a loaded on a planetary. Figure 8 is a cross-sectional view showing a tube with no metal coating formed. Figure 9 is a photoresist. FIG. 10 is a perspective view showing a state in which a large number of O surface acoustic wave elements are formed on a piezoelectric square 71. FIG. FIG. 7 is a cross-sectional view showing a stateless tube in which a piezoelectric square 7a is loaded on a planetary adapted to another embodiment of the method for manufacturing a wave element. 1, 11...Piezoelectric square 7A2.21.2, 12. , 12, 12. ... Al 1=um coating S, 2-tone hot plate 7.
...Short-circuiting pieces 22, 42...Planetary for deposition 21
, 41...Inoue, a man on the side of Oyamabe
Claims (2)
接する裏面の一部に一工程で金属薄膜を彫威する工程と
、前記表面に形成され、−に金属薄膜を写真蝕刻法によ
）蝕刻し、前記圧電クエ７７に多数の弾性表面波素子を
形成する工１と、前記弾性表面波素子を分離するｌ１と
を具備すること１０黴とする弾性聚爾波素子ａｍ造方法
・(1) A step of engraving a metal thin film on a part of the piezoelectric quaffa ollt side wall and the adjacent back surface of ζ01m1mK in one step, etching the metal thin film formed on the surface (by photolithography), and etching the metal thin film on the A method for manufacturing an elastic acoustic wave element, comprising step 1 for forming a large number of surface acoustic wave elements on a piezoelectric cube 77, and step 1 for separating the surface acoustic wave elements.
とも一部と非接触である原着用プラネタリ−と、前記蒸
着用プラネタリ−に載置された前記圧電ウェファの表面
、１１面及びとの間両に隣接する裏面の一部に一工楊で
金属薄＊１＊成可能な蒸着装置とを少くとも具備するこ
とｔ４１Ｉ冑とする弾性ｌＩ！菖波素子Ｏ１ｌ造装置０(2) between the surface of the piezoelectric wafer placed on the evaporation planetary, and the surface of the piezoelectric wafer placed on the evaporation planetary, which is in non-contact with at least a part of the back surface of the piezoelectric wafer; A part of the back surface adjacent to both sides should be equipped with at least a vapor deposition device capable of forming a metal thin *1* in a single process. Iris wave element O1l manufacturing equipment 0
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11089781A JPS5813009A (en) | 1981-07-17 | 1981-07-17 | Method and device for manufacturing surface acoustic wave element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11089781A JPS5813009A (en) | 1981-07-17 | 1981-07-17 | Method and device for manufacturing surface acoustic wave element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5813009A true JPS5813009A (en) | 1983-01-25 |
Family
ID=14547453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11089781A Pending JPS5813009A (en) | 1981-07-17 | 1981-07-17 | Method and device for manufacturing surface acoustic wave element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5813009A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61206316U (en) * | 1985-06-14 | 1986-12-26 | ||
| JPH01319935A (en) * | 1988-06-21 | 1989-12-26 | Matsushita Electric Ind Co Ltd | Dry-etching device for pyroelectric material |
| JPH02260907A (en) * | 1989-03-31 | 1990-10-23 | Hoya Corp | Manufacture of surface acoustic wave device |
| JPH03293808A (en) * | 1990-04-11 | 1991-12-25 | Fujitsu Ltd | Production of surface acoustic wave element |
| JP2002009569A (en) * | 2000-06-26 | 2002-01-11 | Toshiba Corp | Manufacturing method for surface acoustic wave device |
| US7389570B2 (en) * | 2004-06-28 | 2008-06-24 | Kyocera Corporation | Surface acoustic wave device manufacturing method, surface acoustic wave device, and communications equipment |
| US20090205177A1 (en) * | 2008-02-15 | 2009-08-20 | Mitsuo Tomiyama | Method of fabricating piezoelectric vibrating piece, piezoelectric vibrating piece, piezoelectric vibrator, oscillator, electronic apparatus, radiowave timepiece, wafer and jig for wafer |
-
1981
- 1981-07-17 JP JP11089781A patent/JPS5813009A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61206316U (en) * | 1985-06-14 | 1986-12-26 | ||
| JPH01319935A (en) * | 1988-06-21 | 1989-12-26 | Matsushita Electric Ind Co Ltd | Dry-etching device for pyroelectric material |
| JPH02260907A (en) * | 1989-03-31 | 1990-10-23 | Hoya Corp | Manufacture of surface acoustic wave device |
| JPH03293808A (en) * | 1990-04-11 | 1991-12-25 | Fujitsu Ltd | Production of surface acoustic wave element |
| JP2002009569A (en) * | 2000-06-26 | 2002-01-11 | Toshiba Corp | Manufacturing method for surface acoustic wave device |
| US7389570B2 (en) * | 2004-06-28 | 2008-06-24 | Kyocera Corporation | Surface acoustic wave device manufacturing method, surface acoustic wave device, and communications equipment |
| US20090205177A1 (en) * | 2008-02-15 | 2009-08-20 | Mitsuo Tomiyama | Method of fabricating piezoelectric vibrating piece, piezoelectric vibrating piece, piezoelectric vibrator, oscillator, electronic apparatus, radiowave timepiece, wafer and jig for wafer |
| US8104154B2 (en) * | 2008-02-15 | 2012-01-31 | Seiko Instruments Inc. | Method of manufacturing a piezoelectric vibrating piece |
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