JPS58128756A - Epoxy resin composition for photo semiconductor sealing - Google Patents
Epoxy resin composition for photo semiconductor sealingInfo
- Publication number
- JPS58128756A JPS58128756A JP57012458A JP1245882A JPS58128756A JP S58128756 A JPS58128756 A JP S58128756A JP 57012458 A JP57012458 A JP 57012458A JP 1245882 A JP1245882 A JP 1245882A JP S58128756 A JPS58128756 A JP S58128756A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- hardening
- acid anhydride
- resin composition
- curing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は光半導体封止用エポキシ樹脂組成物に関する
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an epoxy resin composition for encapsulating optical semiconductors.
光半導体素子の封止材料としては、透明な硬化物を与え
るものであることが要求され、この目的に対して酸無水
物系硬化剤を用いたエポキシ樹脂組成物が好適であるこ
とが知られている。この種の組成物では、酸無水物系硬
化剤とともに第三級アミン、イミダゾール類、有機金属
錯塩などの硬化促進剤を併用して、硬化速度の向上を図
っている。Encapsulation materials for optical semiconductor devices are required to provide transparent cured products, and it is known that epoxy resin compositions using acid anhydride curing agents are suitable for this purpose. ing. In this type of composition, a curing accelerator such as a tertiary amine, imidazoles, or an organic metal complex salt is used together with an acid anhydride curing agent to improve the curing speed.
ところが、かかる従来のエポキシ樹脂組成物においては
、速硬化とするために硬化温度を上げたり、硬化促進剤
の量を多くしたりすると、硬化物が黄色に変色して光半
導体素子の封止材料として使用に供しえなくなる問題を
有していた。However, in such conventional epoxy resin compositions, when the curing temperature is increased or the amount of curing accelerator is increased to achieve rapid curing, the cured product turns yellow and becomes a encapsulating material for optical semiconductor devices. There was a problem that it could no longer be used as a standard.
この発明者らは、上述の如き問題を回避するために鋭意
検討した結果、硬化促進剤として特定の第四級アンモニ
ウム塩を特定量使用したときに、速硬化性であると同時
に硬化物の変色が抑えられた封止材料が得られることを
知り、この発明を完成するに至ったものである。As a result of intensive studies to avoid the above-mentioned problems, the inventors found that when a specific amount of a specific quaternary ammonium salt was used as a curing accelerator, it was possible to achieve rapid curing as well as discoloration of the cured product. It was discovered that it was possible to obtain a sealing material with suppressed oxidation, and this led to the completion of this invention.
すなわち、この発明は、ビスフェノール型エポキシ樹脂
および/または脂環式エポキシ樹脂に、酸無水物系硬化
剤とともにつぎの一般式;〔式中、R,、R,、Rsお
よびに4は脂肪族の一価有機基、Xはハロゲンである〕
で表わされる第四級アンモニウム塩からなる硬化促進剤
を、酸無水物系硬化剤100重量部に対して5重量部以
下の割合で含有させたことを特徴とする光半導体封止用
エポキシ樹脂組成物に係るものである。That is, this invention provides a bisphenol type epoxy resin and/or an alicyclic epoxy resin together with an acid anhydride curing agent having the following general formula; monovalent organic group, X is a halogen] A curing accelerator consisting of a quaternary ammonium salt represented by: The present invention relates to a characteristic epoxy resin composition for encapsulating optical semiconductors.
このように、この発明において使用する第四級アンモニ
ウム塩からなる硬化促進剤は、脂肪族系の有機基(R,
、R2,R3およびR,)を有する第四級アンモニウム
のハロゲン塩であり、このものはそれ自体無色であると
ともにエポキシ樹脂や酸無水物系硬化剤に対して良好に
相溶する性質を有している。この発明者らは、かかる硬
化促進剤によれば、硬化時の温度を高くしあるいは上記
促進剤の量を多くして速硬化とする場合でも、硬化物の
着色化を有効に防止でき、したがって実質的な硬化速度
の向上をも図れることを見い出したものである。As described above, the curing accelerator consisting of a quaternary ammonium salt used in this invention has aliphatic organic groups (R,
, R2, R3 and R,), which is colorless in itself and has the property of being well compatible with epoxy resins and acid anhydride curing agents. ing. The inventors have discovered that with such a curing accelerator, even when the curing temperature is raised or the amount of the accelerator is increased to achieve rapid curing, discoloration of the cured product can be effectively prevented. It has been discovered that the curing speed can also be substantially improved.
一方、第四級アンモニウム塩のなかには、前記一般式中
のR,、R2,R,およびR1の少なくともひとつが芳
香族基となるもの、ノ10ゲン塩以外のたとえばハイド
ロゼンサルフエート(H3O4)の如き塩からなるもの
、N−置換ピリジニウム塩、N−置換ピコリニウム塩や
N−置換スチルバゾリウム塩などからなるものなどが多
く知られている。しかるに、かかる第四級アンモニウム
塩によると、酸無水物系硬化剤やエポキシ樹脂との相溶
性が悪いか、それ自体着色しているか、あるいは硬化物
が着色してくるなどの問題があり、光半導体素子の封止
材料としては従来の第三級アミンやイミダゾール類など
と同様に好適な硬化促進剤とはなりえない。On the other hand, among quaternary ammonium salts, there are those in which at least one of R, R2, R, and R1 in the above general formula is an aromatic group, and quaternary ammonium salts other than hydrogen salts, such as hydrogen sulfate (H3O4). There are many known salts such as N-substituted pyridinium salts, N-substituted picolinium salts, N-substituted stilbazolium salts, and the like. However, such quaternary ammonium salts have problems such as poor compatibility with acid anhydride curing agents and epoxy resins, coloring themselves, or coloring of the cured product. Like conventional tertiary amines and imidazoles, it cannot be used as a suitable curing accelerator as a sealing material for semiconductor devices.
この発明における前記一般式で表わされる第四級アンモ
ニウムのハロゲン塩のなかでも、とくに好適なものは一
般式中のR1+ R2,R,および電がいずれもアルキ
ル基からなるものである。上記アルキル基としては炭素
数1〜18の範囲であるのが望ましい。このようなハロ
ゲン塩の代表例を挙げれば、テトラメチルアンモニウム
クロライド、テトラメチルアンモニウムブロマイド、テ
トラブチルアンモニウムブロマイド、トリオクチルメチ
ルアンモニウムクロライドなどがある。Among the quaternary ammonium halogen salts represented by the above general formula in this invention, particularly preferred ones are those in which R1+, R2, R, and electrons are all alkyl groups. The alkyl group desirably has 1 to 18 carbon atoms. Typical examples of such halogen salts include tetramethylammonium chloride, tetramethylammonium bromide, tetrabutylammonium bromide, and trioctylmethylammonium chloride.
この発明においては上記の硬化促進剤を酸無水物系硬化
剤100重量部に対して5重量部以下の割合で使用する
。上記より多くなると、硬化物の着色化を防止できなく
なるからである。上記範囲内においては、その使用量を
多くするほど速硬化性となり、また硬化物の着色化は生
じない。一般には、0.4〜5重量部とするのがよく、
好適には10〜25重量部である。In this invention, the above-mentioned curing accelerator is used in a proportion of 5 parts by weight or less per 100 parts by weight of the acid anhydride curing agent. This is because if the amount exceeds the above, coloring of the cured product cannot be prevented. Within the above range, the larger the amount used, the faster the curing will be, and the cured product will not be colored. Generally, the amount is preferably 0.4 to 5 parts by weight.
The amount is preferably 10 to 25 parts by weight.
この発明に適用されるエポキシ樹脂は、ビスフェノール
型エポキシ樹脂か脂環式エポキシ樹脂のいずれかであり
、両者を混合して使用しても差し支えない。また、少量
であれば他のエポキシ樹脂の使用も許されるが、他のエ
ポキシ樹脂の場合それ自体着色していることが多いから
、この発明の効果を妨げない割合とすべきである。The epoxy resin applied to this invention is either a bisphenol type epoxy resin or an alicyclic epoxy resin, and a mixture of both may be used. Further, it is permissible to use other epoxy resins in small amounts, but since other epoxy resins are often colored themselves, the proportions should be such that they do not impede the effects of the present invention.
この発明において用いられる酸無水物系硬化剤としては
、ヘキサヒドロ無水フタル酸、テトラヒドロ無水フタル
酸、メチルへキサヒドロ無水フタル酸、メチルテトラヒ
ドロ無水フタル酸などの無色ないし淡黄色の酸無水物を
いずれも使用できる。As the acid anhydride curing agent used in this invention, colorless to pale yellow acid anhydrides such as hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, and methyltetrahydrophthalic anhydride are used. can.
この酸無水物の使用量は、エポキシ樹脂100重量部に
対して通常80〜130重量部程度である。The amount of acid anhydride used is usually about 80 to 130 parts by weight per 100 parts by weight of the epoxy resin.
この発明の光半導体封止用エポキシ樹脂組成物は、上記
のエポキシ樹脂、酸無水物系硬化剤および硬化促進剤の
ほか、必要に応じて染料、可撓性付与剤、変性剤、劣化
防止剤、離型剤、反応性ないし非反応性の希釈剤などの
従来公知の添加剤を含ませることができる。The epoxy resin composition for encapsulating optical semiconductors of the present invention contains, in addition to the above-mentioned epoxy resin, acid anhydride curing agent, and curing accelerator, a dye, a flexibility imparting agent, a modifier, and a deterioration inhibitor, if necessary. Conventionally known additives such as a mold release agent, a reactive or non-reactive diluent, and the like can be included.
このようにして得られるこの発明のエポキシ樹脂組成物
は、光半導体素子の樹脂封止に当たって、150°C以
下の硬化温度においてほとんど変色のない透明性にすぐ
れる硬化物を与え、また、100〜1209Cの低温領
域でも硬化促進剤の添加量を増すことによって30〜6
0分程度の短時間で硬化し型からの離型が可能であり、
硬化物も変色のない透明品が得られ、さらにこれを15
(7’C以下にて後硬化を行なっても変色せず透明性
に非常にすぐれたものとなる。The epoxy resin composition of the present invention obtained in this way provides a cured product with excellent transparency with almost no discoloration at a curing temperature of 150°C or less when sealing an optical semiconductor element with resin, and Even in the low temperature range of 1209C, by increasing the amount of curing accelerator added,
It hardens in a short time of about 0 minutes and can be released from the mold.
A transparent cured product with no discoloration was obtained, and this was further cured for 15 minutes.
(Even if post-curing is performed at a temperature below 7'C, it will not change color and will have excellent transparency.
つぎに、この発明の実施例を記載する。以下において、
部とあるは重量部を意味するものとする。Next, examples of this invention will be described. In the following,
Parts shall mean parts by weight.
実施例1
EP−828C油化シ工ルエポキシ社製のビスフェノー
ルA型エポキシ樹脂)100部に、4−メチルへキサヒ
ドロ無水フタル酸90部および後記第1表に示される配
合部数のテトラブチルアンモニウムブロマイド(広栄化
学社製の商品名TBAB)を配合し、均一に混合してこ
の発明の光半導体封止用エポキシ樹脂組成物とした。Example 1 To 100 parts of EP-828C Bisphenol A type epoxy resin (manufactured by Yuka Silk Epoxy Co., Ltd.), 90 parts of 4-methylhexahydrophthalic anhydride and tetrabutylammonium bromide (in the amount shown in Table 1 below) were added. TBAB (trade name, manufactured by Koei Kagaku Co., Ltd.) was blended and mixed uniformly to obtain an epoxy resin composition for encapsulating optical semiconductors of the present invention.
比較例1
に、2−エチル−4−メチルイミダゾールを後記第1表
に示される配合部数で使用した以外は、実施例1と同様
にして、光半導体封止用エポキシ樹脂組成物を得た。Comparative Example 1 An epoxy resin composition for encapsulating an optical semiconductor was obtained in the same manner as in Example 1, except that 2-ethyl-4-methylimidazole was used in the amount shown in Table 1 below.
比較例2
テトラブチルアンモニウムブロマイドの代わりに、2・
4−6−)リスジメチルフェノール(セールチルニー(
ジャパン〕社製の商品名D M P −30)をつぎの
第1表に示される配合部数で用いた以外は、実施例1と
同様にして、光半導体封止用エポキシ樹脂組成物を得た
。Comparative Example 2 Instead of tetrabutylammonium bromide, 2.
4-6-) Lisdimethylphenol
An epoxy resin composition for encapsulating optical semiconductors was obtained in the same manner as in Example 1, except that DMP-30 (trade name: DMP-30) manufactured by Japan Co., Ltd. was used in the proportions shown in Table 1 below. .
上記実施例および比較例の各組成物を、径5mm。Each of the compositions of the above Examples and Comparative Examples had a diameter of 5 mm.
高さ8IIIIの形状からなるケースに注型し、100
〜150°Cで硬化させたときの離型可能時間(硬化速
度の良否つと、上記方法で各温度にて1時間硬化させた
のち、120°Cで16時間後硬化処理を行なったとき
の硬化物の変色性とを調べた結果は、つぎのIJ1表に
併記されるとおりであった。Cast into a case with a height of 8III and 100
Mold releasable time when cured at ~150°C (quality of curing speed and cure when cured for 1 hour at each temperature using the above method and then post-cured at 120°C for 16 hours) The results of examining the discoloration of the material were as shown in Table IJ1 below.
なお、変色性は、黄色く変色して使用不可能となる場合
を×、やや変色するが使用可能である場合をΔ、全く変
色せず良好な場合を○と、評価した。The discoloration property was evaluated as × if the product turned yellow and became unusable, Δ if it changed color slightly but was usable, and ○ if it did not change color at all.
第 1 表
実施例2
EP828(前出950部とERL−4221(ユニオ
ンカーバイド社製の脂環式エポキシ樹脂950部とを併
用し、硬化促進剤の使用量を2部に設定した以外は、実
施例1と同様にして、この発明の光半導体封止用エポキ
シ樹脂組成物を得た。Table 1 Example 2 The procedure was carried out except that EP828 (950 parts as mentioned above) and ERL-4221 (950 parts of alicyclic epoxy resin manufactured by Union Carbide) were used in combination, and the amount of curing accelerator was set at 2 parts. In the same manner as in Example 1, an epoxy resin composition for encapsulating optical semiconductors of the present invention was obtained.
実施例3
テトラブチルアンモニウムブロマイドの代わりに、トリ
オクチルメチルアンモニウムクロライド(広栄化学社製
の商品名TOMAC)を2部用いた以外は、実施例1と
同様にして、この発明の光半導体封止用エポキシ樹脂組
成物を得た。Example 3 The same procedure as in Example 1 was carried out, except that 2 parts of trioctylmethylammonium chloride (trade name: TOMAC, manufactured by Koei Chemical Co., Ltd.) was used instead of tetrabutylammonium bromide. An epoxy resin composition was obtained.
比較例3〜6
テトラブチルアンモニウムブロマイドの代ワリ1こ、N
−セチル−1・4−ピコリニウムクロライド(比較例3
)、テトラブチルアンモニウムハイドロゼンサルフエイ
ト(比較例4)、ベンジルトリブチルアンモニウムブロ
マイド(比較例5)、ベンジルトリエチルアンモニウム
クロライド(比較例6)を、それぞれ2部用いた以外は
、実施例1と同様にして、4種の光半導体封止用エポキ
シ樹脂組成物を調製した。Comparative Examples 3 to 6 1 piece of tetrabutylammonium bromide, N
-Cetyl-1,4-picolinium chloride (Comparative Example 3
), tetrabutylammonium hydrogen sulfate (Comparative Example 4), benzyltributylammonium bromide (Comparative Example 5), and benzyltriethylammonium chloride (Comparative Example 6) were used in the same manner as in Example 1, except that 2 parts each were used. Four types of epoxy resin compositions for encapsulating optical semiconductors were prepared.
、上記実施例2.3および比較例3〜6の各組成物につ
き、型内での硬化温度を150°Cおよび100°Cに
設定した以外は、前記の実施例1の場合と同様にして、
離型可能時間および変色性を調べた。結果は、つぎの第
2表に示されるとおりであった。The compositions of Example 2.3 and Comparative Examples 3 to 6 were prepared in the same manner as in Example 1, except that the curing temperature in the mold was set at 150°C and 100°C. ,
The release time and discoloration were investigated. The results were as shown in Table 2 below.
第 2 表
(※s) 120”C,16時間硬化どのガラス転移
温度が低く、他のんであった。Table 2 (*s) Cured at 120"C for 16 hours. Which glass transition temperature was lower than the others.
(×リ 硬化促進剤がエポキシ樹脂および酸無水物に
相溶せず、特性試験に供しつるような均一な組成物が得
られなかった。(x) The curing accelerator was not compatible with the epoxy resin and the acid anhydride, and a uniform composition that could be used for property tests could not be obtained.
以上の第1表および第2表の結果から明らかなように、
この発明の光半導体封止用エポキシ樹脂温度を上げても
硬化物の変色がみられず、実質的に硬化速度を向上させ
うるものであることがわかる。As is clear from the results in Tables 1 and 2 above,
Even when the temperature of the epoxy resin for encapsulating optical semiconductors of this invention is increased, no discoloration of the cured product is observed, indicating that the curing speed can be substantially improved.
特許出願人 日東電気工業株式会社Patent applicant: Nitto Electric Industry Co., Ltd.
Claims (1)
環式エポキシ樹脂に、酸無水物系硬化剤とともにっぎの
一般式; (式中、R,、R2,−およびR1は脂肪族の一価有機
基、Xはハロゲンである) で表わされる第四級アンモニウム塩からなる硬化促進剤
を、酸無水物系硬化剤100重量部に対して5重量部以
下の割合で含有させたことを特徴とする光半導体封止用
エポキシ樹脂組成物。 (2)第四級アンモニウム塩からなる硬化促進剤として
、一般式中のR,、R,、R,および鼠、がアルキル基
からなるものを使用した特許請求の範囲第(1)項記載
の光半導体封止用エポキシ樹脂組成物。[Scope of Claims] is) a general formula consisting of a bisphenol-type epoxy resin and/or an alicyclic epoxy resin together with an acid anhydride curing agent; A curing accelerator consisting of a quaternary ammonium salt represented by a monovalent organic group (X is a halogen) is contained in a ratio of 5 parts by weight or less per 100 parts by weight of an acid anhydride curing agent. An epoxy resin composition for encapsulating optical semiconductors. (2) The curing accelerator comprising a quaternary ammonium salt is a curing accelerator according to claim (1), in which R, , R, , R, and R in the general formula are each an alkyl group. Epoxy resin composition for encapsulating optical semiconductors.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1245882A JP2534642B2 (en) | 1982-01-27 | 1982-01-27 | Epoxy resin composition for optical semiconductor encapsulation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1245882A JP2534642B2 (en) | 1982-01-27 | 1982-01-27 | Epoxy resin composition for optical semiconductor encapsulation |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58128756A true JPS58128756A (en) | 1983-08-01 |
JP2534642B2 JP2534642B2 (en) | 1996-09-18 |
Family
ID=11805898
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1245882A Expired - Lifetime JP2534642B2 (en) | 1982-01-27 | 1982-01-27 | Epoxy resin composition for optical semiconductor encapsulation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2534642B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59199713A (en) * | 1983-04-27 | 1984-11-12 | Sumitomo Bakelite Co Ltd | Adjustment of refractive index of cured epoxy resin |
EP1117134A3 (en) * | 2000-01-11 | 2002-05-29 | Toyoda Gosei Co., Ltd. | Encapsulant for light-emitting devices |
US20140091290A1 (en) * | 2012-09-28 | 2014-04-03 | Boe Technology Group Co., Ltd. | Encapsulated structure of light-emitting device, encapsulating process thereof and display device comprising encapsulated structure |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5131799A (en) * | 1974-09-13 | 1976-03-18 | Hitachi Ltd | NETSUKOKASEIJUSHISOSEIBUTSU |
JPS54127458A (en) * | 1978-03-27 | 1979-10-03 | Sumitomo Bakelite Co Ltd | Colorless and transparent epoxy resin composition |
-
1982
- 1982-01-27 JP JP1245882A patent/JP2534642B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5131799A (en) * | 1974-09-13 | 1976-03-18 | Hitachi Ltd | NETSUKOKASEIJUSHISOSEIBUTSU |
JPS54127458A (en) * | 1978-03-27 | 1979-10-03 | Sumitomo Bakelite Co Ltd | Colorless and transparent epoxy resin composition |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59199713A (en) * | 1983-04-27 | 1984-11-12 | Sumitomo Bakelite Co Ltd | Adjustment of refractive index of cured epoxy resin |
JPS6328448B2 (en) * | 1983-04-27 | 1988-06-08 | Sumitomo Bakelite Co | |
EP1117134A3 (en) * | 2000-01-11 | 2002-05-29 | Toyoda Gosei Co., Ltd. | Encapsulant for light-emitting devices |
US6617787B2 (en) | 2000-01-11 | 2003-09-09 | Toyoda Gosei Co., Ltd. | Light-emitting system with alicyclic epoxy sealing member |
US20140091290A1 (en) * | 2012-09-28 | 2014-04-03 | Boe Technology Group Co., Ltd. | Encapsulated structure of light-emitting device, encapsulating process thereof and display device comprising encapsulated structure |
US8916398B2 (en) * | 2012-09-28 | 2014-12-23 | Boe Technology Group Co., Ltd. | Encapsulated structure of light-emitting device, encapsulating process thereof and display device comprising encapsulated structure |
CN102881838B (en) * | 2012-09-28 | 2016-08-10 | 京东方科技集团股份有限公司 | The encapsulating structure of luminescent device and method for packing, display device |
Also Published As
Publication number | Publication date |
---|---|
JP2534642B2 (en) | 1996-09-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3450613A (en) | Epoxy adhesive containing acrylic acid-epoxy reaction products and photosensitizers | |
JPS6072917A (en) | Latent curing agent for epoxy resin | |
JP5298411B2 (en) | Epoxy resin composition and use thereof | |
US3740373A (en) | Epoxy resin composition containing a polyoxyalkylenepolyamine,substituted piperazine,salicylic acid and a phenol | |
JPS58128756A (en) | Epoxy resin composition for photo semiconductor sealing | |
JPS60124617A (en) | Resin-sealed emitter | |
JPH04209648A (en) | Epoxy resin composition for sealing photosemiconductor | |
JPS63186726A (en) | Room temperature rapid curing epoxy resin composition | |
JPS6218565B2 (en) | ||
JPH0125487B2 (en) | ||
JPS6225686B2 (en) | ||
JPH0150328B2 (en) | ||
JPS6375024A (en) | Curable resin composition | |
JP2646391B2 (en) | Liquid epoxy resin composition | |
JPH05214075A (en) | Addition product of diamino diphenyl sulfone compound as curing agent for epoxy resin | |
JP3458160B2 (en) | Liquid epoxy resin composition | |
JP2712876B2 (en) | Transparent epoxy resin composition for transfer mold | |
JPS59174618A (en) | Epoxy resin composition for photo-semiconductor sealant having excellent moisture resistance | |
JPH0797432A (en) | Epoxy resin composition and photosemiconductor device sealed therewith | |
JPH03285909A (en) | Epoxy resin composition and resin-encapsulated semiconductor device | |
JPH03166221A (en) | Epoxy resin composition | |
JP3225574B2 (en) | One-part type thermosetting epoxy resin composition | |
JP3644711B2 (en) | Optical semiconductor device | |
JPH01247414A (en) | Epoxy resin composition for sealing optical semiconductor | |
JPH02308809A (en) | Epoxy resin composition |