JPS58128750A - Semiconductor device - Google Patents

Abstract

PURPOSE:To prevent deterioration of precision in an enhanced density device by a method wherein conductor regions to be subjected to non-contact potential measurement by means of electron beam radiation is kept a prescribed distance from conductors with different potentials. CONSTITUTION:To measure the potential between leads 8 and 9, gaps d1-d8 should be not less than 4mum, in the vicinity of regions 10, 11 to be exposed to electron beam radiation. The region 10 is to be located at a spot separated not less than 4mum from other conductors in a conductive pattern designed in a conventional manner without considering the use of an electron beam to measure potential. The region 11, wherefore no such locations are available in a conventional designed as referred to above, and therefore to be positioned as indicated by broken lines, has a part of the conductor pattern extended for measurement with other conductors routed around. A semiconductor device of this design is less affected by nearby conductors in a non-contact potential measurement by means of electron beam radiation and never experiences an error serious enough to incapacitate a logic level decision or the like.

Description

DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to the construction of a semiconductor device OII capable of improving the measurement station of each WO non-contact electrometer faK in a semiconductor device based on electronic beam AK, Hibiki Klt measurement station. K11l Background of technology
K is known as an effective method4.

In general, the chip inside a semiconductor device is either completely covered with the exception of bonding pads, or has a badge on it.
It is covered with a membrane. This insulation material! Is the membrane an obstacle to electron beam irradiation?At present, if we increase the acceleration voltage of the electron beam and allow the electron beam to pass through the insulating tumor membrane! It is now possible to measure Therefore, at present, there are cases where the electron beam is fully irradiated and cases where measurements are performed without opening the window. Even in the case of J, as the density of recent integrated circuits has improved, the measurement sf has decreased and the result has become K so that no elephants can be seen.

(3) Purpose of the Invention The purpose of the present invention is to avoid the deterioration in accuracy caused by the increase in integration density as described above, and to enable failure analysis and operation analysis with the necessary accuracy even in a 7% high-density detection circuit. An object of the present invention is to provide an improved semiconductor device.

(4) Structure of the Invention It has been found by the L-type dormitory IINC described below that the cause of the decrease in stacking capacity as the integration density increases is due to the effect of adjacent conductors having different potentials.

On top of that, a 1g8.4 aluminum electrode of @6μm and about 1pm thickness is formed, and the gears of both electrodes are made of various types.
A voltage of 6 V was applied to the 0 furnace fi18 for preparing the sample, and 1
An electron beam i for measuring zero potential, which applies a variable voltage to electrodes 1 and 6, irradiates the center of electrode 6.

The tertiary electrons 6, which are generated in large numbers, are detected by a detector 7 and actuated as an output 8. FIG. 1 is a graph showing the change in the output 8 when the gap d and the voltage V applied to the electrode 4 are changed.

Based on the reference when d is infinite (0@), the smaller the S* difference becomes, the larger the voltage difference between the two electrodes, the larger the error 31 becomes.The zero gap d is 4p.
As, when V is 3■, the output 8 is 0.9 (arbitrary scale)9, and this output S is 1.9 when viewed from the standard -1 of d or infinity. SV and na6. There will be an error of o, sv. Judgment of the logic level of digital IO - A place to think about it, 1! Since the error is considered to be on the order of O, SV, conductors with different potentials are required to be separated by at least #m. square t or 14p
From a circular shape of mφ! ip=×Iβm square or 5. u
Considering a circular irradiation area of mφ, it is necessary that the edge of the other conductor is at least 1 μm away from the rut of the irradiation area.
When opening a window in the insulating film, it is sufficient to open a window of the same size as the irradiation area.

(5) Embodiment of the Invention FIG. S shows an example of the case where the present invention is implemented in a semiconductor integrated circuit, and the potentials of a conductor 8 and a conductor 9 are to be measured. Gap d0~ for irradiation areas 10 and 1IVc
d is set to be 4@m or more, and the irradiation area 10 is a conductor pattern designed in a conventional manner without considering the potential needle side due to electron beam irradiation. In the case where the irradiation area 11 is selected and set, there is no such place as mentioned above, and in a normal design, it is a conductor pattern shown in the form of dots.In order to measure the total potential, a part of the conductor is extended. , when other conductors are detoured (6) Effects of the Invention A semiconductor device designed according to the present invention has less influence from nearby conductors in non-contact potential measurement by electron beam irradiation, and eliminates the need for logic level determination. Errors that would otherwise be possible do not always occur. Also, the distance between the conductors is increased (d
〉〉〉) If a high-performance detector is used, it is possible to measure not only the logic level but also the absolute value voltage with an accuracy of about 0.1V.

[Brief explanation of the drawing]

#E1 Figure (ml and (bl) are diagrams showing the influence of adjacent conductors. Figure 2 is an example of the present invention. Here, l is silicon 35@, s is 810. Film, S and number are aluminum. Electronium electrode, I is the irradiation electron beam, 6 is the secondary electron, 7 is the detector, S and 9 are the conductors to conduct the potential needle side, 1G and l are the electron beam irradiation area. 1 (L) (LnVQ (V)

Claims (1)

[Claims] A semiconductor characterized in that the electron beam irradiation area of a conductor to which a non-contact potential needle is applied by electron beam irradiation is 4 μm or more away from the conductor to which a potential different from the potential of the conductor is applied. Device.