JPS5812541Y2 - High voltage semiconductor rectifier - Google Patents

Description

[Detailed description of the invention] The present invention relates to a high-voltage semiconductor rectifier with good heat dissipation effect, and in particular, to provide a high-voltage semiconductor rectifier that can reliably simplify wiring and maintain electrical insulation. is the main purpose.

Generally, in a conventional high-voltage semiconductor rectifier having a relatively large current capacity, semiconductor rectifying elements 2a and 2b are fixed with opposite polarities to one side of a heat sink 1 made of a metal plate, as shown in FIG. A plurality of series-connected semiconductor devices are arranged so that their heat sinks 1 are parallel to each other, and the elements 2a,
The heat sinks 1 to which the heat sinks 2b are fixed are aligned so that their surfaces are in the same direction, and in this state, the elements 2a and 2b of adjacent semiconductor devices are connected in series using separate conducting wires.

In a device having such a configuration, the conductor must be wired so that it does not come into contact with the heat sink 1, and the conductor must be soldered to both the lead wire 1a of the element 2a and the lead wire lb of the element 2b. However, the biggest drawback is that the conductor wire comes into contact with the heat sink 1 during resin molding of the device having such a configuration or during handling before molding. This means that accidents are more likely to occur.

The present invention eliminates such drawbacks, and provides a highly reliable high-voltage semiconductor rectifier with a relatively large current capacity that simplifies the contact wiring of semiconductor rectifier elements and prevents contact between the wiring and the heat sink. It provides equipment.

First, the semiconductor device used in the present invention will be explained according to A to A in FIG. 2. This device uses a heat sink 1 having a pinched portion S that can be easily twisted and bent.

The pinched portion S is formed by notching from both sides at approximately the center of the heat sink 1 (actually, it is formed during punching).
, wide part A when twisting.

The length is such that it is possible to easily twist approximately 180 degrees to invert parts B and A with respect to parts A and B without causing distortion to B, and to maintain mechanical strength to the extent that no loading is caused by this twisting. and width.

The semiconductor rectifying elements 2a and 2b are fixed to the same surface of the wide parts A and B of the heat sink 1, respectively, with the poles and poles opposite to each other, as shown in FIG. The elements 2a and 2b are inner coated as shown in FIG.

The structure configured in this way has a diameter of approximately 180 mm at the narrow part S.
By twisting, a series-connected semiconductor device as shown in FIG.

The high voltage semiconductor device of the present invention is characterized in that the semiconductor device is connected and configured as follows.

In FIG. 3, first, the heat sink 1a of the first semiconductor device is
The cathode lead wire 1b of the element 2b whose anode side is fixed to the heat sink 1a is arranged so as to be adjacent to the quad terminal TK.

Next, the heat sink 1b of the second semiconductor device is attached to an element 2 whose cathode side is fixed to the first heat sink 1a.
They are arranged in parallel to each other so as to face each other.

In this case, the lead wires la and lb of each semiconductor device are cut to a predetermined length in advance, taking into consideration the predetermined distance between the semiconductor devices. The lead wires la and lb of the second semiconductor device may be connected by an appropriate method such as soldering or caulking.

Thereafter, in the same manner, the semiconductor rectifying element 2a of each semiconductor device is arranged so as to face the element 2b of the next adjacent semiconductor device, and the opposing lead wires are connected to each other.
The anode side lead wire 1a of the semiconductor device element 2a located at the outermost side of the anode side may be brought into contact with the anode terminal TA.

An electrical connection diagram of such a connection configuration is shown in FIG. 4.

Next, the structure shown in FIG. 3 is integrally resin-molded into the shape shown in FIG. 5 to obtain a completed high-voltage semiconductor rectifier.

This molding is performed so that grooves G are formed between each heat sink in order to utilize the heat dissipation function of the heat sinks 1a to 1n, to save molding material, and to reduce the weight of the device.

Further, such molding may be performed after other electronic components, such as semiconductor devices in which surge absorption capacitors are connected between each heat sink or connected in series, are divided into two groups and a capacitor is connected to each group. good.

Next, another embodiment of the present invention will be explained with reference to FIG.

This embodiment shows a voltage doubler type high-voltage semiconductor rectifier such as a three-stage Kotsukuroft-Walton circuit, in which the heat sinks 1a to 1n of the semiconductor device configured as described above are alternately shifted slightly to the left and right. It is placed.

Here, the elements 1a and 1n are obtained by cutting one semiconductor device as described above into two parts at the narrow part of the heat sink, respectively, and
One input terminal fitting T1 is attached to the heat sink 1a, and the heat sink 1n is connected to the heat sink 1a.
There is an output terminal fitting T.

Connect it.

And a heat sink 1 that can protrude to one side (the right side in Figure 6)
One lead wire of the capacitor C1 is connected to the terminal b, and the other lead wire is connected to the other input terminal TI'.

In addition, capacitors C3 and C5 are connected between the heat sinks 1b and 1a and between 1d and 1f, respectively, and the capacitor C
3 and C5 are respectively disposed between the heat sinks 1C and 1a, and 1e is disposed between 1f.

Similarly, the heat sink 1a and 1C91C that can protrude to the left in the same figure
and 1e and 1e and output terminal T.

Connect capacitors C2, C4 and C6 respectively between
These are connected between the heat sinks 1b and 1e, between 1d and 1e, and between 1f and the output terminal T.

They are arranged in between as shown in the figure. With this configuration, the negative lead wire of each capacitor 01 to C6 is connected to the heat sink 1b.
Since the leads only cross 1f and the heat sinks are alternately shifted, there is very little risk of the lead wires coming into contact with the heat sinks.

In addition, in the semiconductor device used in such a device, the element 2
By shifting the fixing points on the heat sinks of elements a and 2 b outward and inward by a predetermined dimension, respectively, element 2 a
, 2b can be arranged facing each other at close range.

In the above embodiment, an example was described in which the high voltage semiconductor rectifying element is constituted by a semiconductor device in which one pellet-shaped semiconductor rectifying element is fixed to each wide portion of each heat sink. It may be made by fixing a coated element or a molded element to the wide part of each heat sink, and each of the above rectifying elements may be made by connecting them in parallel as necessary or by laminating a plurality of pellets. It may also be a high voltage element.

As described above, in the present invention, a specific series-connected semiconductor device is used, and a plurality of these semiconductor devices are arranged so that their heat sinks are aligned parallel to each other and adjacent semiconductor rectifying elements have the same polarity direction. Furthermore, since the opposing semiconductor rectifying elements are connected in series,
The wiring is very simple, and since the wiring does not intersect with the heat radiator, there is no possibility that these will cause a contact accident, and therefore a highly reliable high voltage semiconductor rectifier can be obtained.

[Brief explanation of the drawing]

Figure 1 is a diagram for explaining the configuration of a conventional high voltage semiconductor rectifier, Figure 2 is a diagram showing a semiconductor device used in the device of the present invention, and Figure 3 is an implementation of the high voltage semiconductor rectifier of the present invention. 4 is a diagram showing the electrical connection of the device shown in FIG. 2, FIG. 5 is an external view of the device of the present invention, and FIG. 6 is another embodiment of the device of the present invention. It is a figure which shows an example. 1.1a to 1n- heat sink, S- narrow portions of heat sink A, B-
Wide portion of heat sink, 2 a, 2 b - semiconductor rectifying element.

Claims (1)

[Scope of utility model registration request] Semiconductor rectifying elements are fixed to each wide portion of a heat sink having a twistable narrow portion with opposite polarities, and the heat sink is twisted approximately 180° at the narrow portion. A plurality of connected semiconductor devices are arranged such that the heat sinks thereof are aligned in parallel with each other and the semiconductor rectifying elements of adjacent semiconductor devices face each other with the same polarity direction, and these opposing semiconductor rectifiers A high-voltage semiconductor rectifier characterized by connecting elements in series.