JPS58112354A - Connection conductor for semiconductor device - Google Patents

Connection conductor for semiconductor device

Info

Publication number
JPS58112354A
JPS58112354A JP21046281A JP21046281A JPS58112354A JP S58112354 A JPS58112354 A JP S58112354A JP 21046281 A JP21046281 A JP 21046281A JP 21046281 A JP21046281 A JP 21046281A JP S58112354 A JPS58112354 A JP S58112354A
Authority
JP
Japan
Prior art keywords
terminal
external lead
external
semiconductor device
terminals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21046281A
Other languages
Japanese (ja)
Other versions
JPS6347266B2 (en
Inventor
Atsushi Maruyama
篤 丸山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Fuji Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Fuji Electric Manufacturing Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP21046281A priority Critical patent/JPS58112354A/en
Publication of JPS58112354A publication Critical patent/JPS58112354A/en
Publication of JPS6347266B2 publication Critical patent/JPS6347266B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49548Cross section geometry
    • H01L23/49551Cross section geometry characterised by bent parts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Thyristors (AREA)
  • Rectifiers (AREA)

Abstract

PURPOSE:To allow the internal connection and the external terminal leadout of a semiconductor by a single body and thus improve the workability by a method wherein external lead-out terminals is formed by bending one side of the opposite side of a peripheral frame vertically to a plane of extended projection, and separating it corresponding to the projection. CONSTITUTION:Since top ends of a cathode electrode 13 and an anode electrode 16 are on the same plane, the top ends are inserted into holes of terminals 24, 25, 27, 28, 29 and 32 of the connection conductor and can be brazed. The substrate 11 of a thyristor element is fixed on a bottom plate 42 of the vessel via an insulation plate 41, and, in the vessel constituted of the bottom plate 42 and a side wall 43, resin 44 is cast so as to bury the thyristor element. The projection (external lead-out terminal) 23 out of the resin 44 is further bent again at a right angle along the lid body 45 of the vessel, and is used for connection to the external conductor, together with a nut 46 dropped in the recess of the lid body 45. It is effective to provide a cut 33 on the external lead-out terminal 23 in a transverse direction. The cut 33 shows an effect to the compression and tensile stress due to the external stress.

Description

【発明の詳細な説明】 本発明は同一基板上に配置された複数の半導体素子の基
板と間隔を置いた平面上にある各端子を接続して回路を
構成するとともに外部導出端子を形成するギ導体装置用
接続導体に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for constructing a circuit by connecting the substrates of a plurality of semiconductor elements arranged on the same substrate and respective terminals on planes spaced apart from each other, and forming external lead-out terminals. This invention relates to a connecting conductor for a conductor device.

半導体装置として、例えば第1図に示すようなサイリス
タを用いた三相整流回路を構成する場合、は個のサイリ
スタ個別素子を個個に冷却体に取り付け、各素子を絶縁
しながら、各端子の接続を行うのは実装および保守に手
数を要する。そこでこの回路の全体または一部分を一つ
の容器内におさめた複合製品を使用すれば、装置全体が
小形になり、実装および保守が容易になる。これに対し
て従来は素子相互間の接続あるいは外部導出端子の形成
のために複数の接続導体を使用していた。
When configuring a three-phase rectifier circuit using thyristors as a semiconductor device, for example, as shown in Figure 1, the individual thyristor elements are individually attached to a cooling body, and each terminal is connected while insulating each element. Making connections is complex to implement and maintain. Therefore, if a composite product is used in which all or a portion of this circuit is housed in one container, the entire device becomes smaller and easier to implement and maintain. In contrast, conventionally, a plurality of connection conductors have been used to connect elements to each other or to form external lead-out terminals.

第2図はその一例を示し、サイリスタ素子はそのアノー
ド側が出力側端子1を有する出力側接続導体2の基部3
およびそれぞれ入力側端予盛を有する3個の入力側接続
導体6の基部6の上に載置され、カソード側は出力側接
続導体2の突出片7および入力側接続導体の突出片8に
それぞれ接続される。この結果出力側端子1が第1図の
D端子、入力側端子4が第1図のU、V、W端子となる
FIG. 2 shows an example of this, in which the thyristor element has an output terminal 1 on its anode side and a base 3 of an output side connecting conductor 2.
The cathode side is placed on the base 6 of three input side connection conductors 6 each having an input side end pre-weld, and the cathode side is placed on the protrusion piece 7 of the output side connection conductor 2 and the protrusion piece 8 of the input side connection conductor, respectively. Connected. As a result, the output terminal 1 becomes the D terminal in FIG. 1, and the input terminal 4 becomes the U, V, and W terminals in FIG.

この場合にはサイリスタ素子は第3図に示すように導電
性基板11の上に半導体片12を固定し、アノードは基
板11から、カソードはカソード電極13から引出され
る。別に引出されるゲートリード線14.補助カソード
線15は外部で制御回路に接続する。しかしこの場合は
接続導体が4個必要であり、部品点数が多くまた各接続
導体2゜5の位置合せも面倒であるため作業性が劣る。
In this case, the thyristor element has a semiconductor piece 12 fixed on a conductive substrate 11 as shown in FIG. 3, with the anode drawn out from the substrate 11 and the cathode drawn out from the cathode electrode 13. Gate lead wire 14 drawn out separately. Auxiliary cathode line 15 is externally connected to a control circuit. However, in this case, four connecting conductors are required, the number of parts is large, and alignment of each connecting conductor 2.5 is troublesome, resulting in poor workability.

本発明はこれに対し、単体で半導体装置の内部接続と外
部端子導出とが可能で作業性も良好な接続導体を提供す
ることを目的とする。
In view of this, it is an object of the present invention to provide a connecting conductor that can be used alone to connect internally to a semiconductor device and lead out external terminals, and has good workability.

この目的は、半導体装置接続導体が1枚の電気良導体板
から成形され、方形の周辺枠とその枠の一対の対辺から
それぞれ内方へ同一平面上に伸びる複数の突出部を有し
、突出部の先端は内部接続端子を形成し、周辺枠の前記
の対辺の一方の側は突出部の伸びる平面に対して垂直に
曲げられ突出部に対応して切離されて外部導出端子を形
成することによって達成される。
The purpose of this is that the semiconductor device connection conductor is formed from a single electrically conductive plate and has a rectangular peripheral frame and a plurality of protrusions extending inward from a pair of opposite sides of the frame on the same plane. The tip of the peripheral frame forms an internal connection terminal, and one side of the opposite side of the peripheral frame is bent perpendicularly to the plane in which the protrusion extends and is cut off corresponding to the protrusion to form an external lead-out terminal. achieved by

以下図を引用して本発明の実施例について説明する。第
4図に示す接続導体は、例えば銅板の打抜き、折り曲げ
でつくられるものであり、周辺枠の対辺21.22の一
方の辺21がらは3本の突出部23が設けられており、
それぞれ先端が二つに分れて端子24.25を形成して
いる。他の財力の辺22からはやはり3本の突出部26
が設けられているが、そのうちの2本の先端には直列に
二つの端子27.28が、1本の先端には一つの端子2
9が形成されている。また別の対辺の−っ30にも突出
部31が設けられ、その先端が端子32を形成している
。周辺枠の対辺21および22の側は折り曲げられ、突
出部23.26の基部とともに各端子24,25,2?
、28,29.32の位置する平面に対して垂直面を形
成する。端子24は周辺枠の他方の辺22に連結された
端子28あるいは32と対向し、端子25は同様に他方
の辺22に連結された端子27あるいは29と対向して
いる。この対向している端子の一方、すなわち、端子2
4,2f2に例えば各サイリスタのアノードを、他方、
すなわち端子j!5.32にカソードを接続し、辺21
側の各突出部2Bの間を切断すれば、突出部23の両端
が第1図のp端子を、内側の三つが第1図のU、V、W
端子の役をする。従ってこの場合サイリスタのアノード
およびカソード端子の先端は接続導体の同一平面上にあ
る各端子に接続されるため同一平面状にあることが望ま
しい。
Embodiments of the present invention will be described below with reference to the drawings. The connection conductor shown in FIG. 4 is made by punching and bending a copper plate, for example, and has three protrusions 23 on one side 21 of the opposite sides 21 and 22 of the peripheral frame.
Each tip is divided into two to form terminals 24 and 25. There are still three protruding parts 26 from the other financial power side 22.
are provided with two terminals 27 and 28 in series at the tips of two of them, and one terminal 27 and 28 at the tip of one.
9 is formed. A protrusion 31 is also provided on the other opposite side -30, the tip of which forms a terminal 32. Opposite sides 21 and 22 of the peripheral frame are bent, and the bases of the protrusions 23, 26 as well as the respective terminals 24, 25, 2?
, 28, 29. A plane perpendicular to the plane where 32 are located is formed. The terminal 24 faces the terminal 28 or 32 connected to the other side 22 of the peripheral frame, and the terminal 25 faces the terminal 27 or 29 similarly connected to the other side 22. One of these opposing terminals, that is, terminal 2
For example, connect the anode of each thyristor to 4,2f2, and
i.e. terminal j! 5. Connect the cathode to 32, side 21
If you cut between each of the side protrusions 2B, both ends of the protrusion 23 will connect to the p terminal shown in Figure 1, and the inner three will connect to the U, V, and W terminals shown in Figure 1.
Acts as a terminal. Therefore, in this case, the tips of the anode and cathode terminals of the thyristor are preferably on the same plane because they are connected to the respective terminals on the same plane of the connecting conductor.

第ε図はそのような素子の一例で、第3図に示した素子
のγノード側の基板11にアノード電極16を設けたも
のであり、カソード電極13およびアノード電極16の
先端はほぼ同一平面にあるので、第6図に示すように本
発明による接続導体の端子24、25. J!’7.2
B、2G、31!の穴に先端を挿入してろう付すること
ができる。サイリスタ素子の基板11は絶縁板41を介
して容器の底板4j!の上に固着され、底板42および
側壁43よりなる容器の内部にはサイリスタ素子を埋め
るように樹脂44が注入される。樹脂44より上に出た
突出部(外部導出端子)23はさらに容器の蓋体45に
沿って再び直角に折り曲げられ、蓋体45のくぼみに落
し込まれたナツト46と共に外部導体との接続に用いら
れる。
FIG. ε shows an example of such an element, in which an anode electrode 16 is provided on the substrate 11 on the γ node side of the element shown in FIG. Therefore, as shown in FIG. 6, the terminals 24, 25 . of the connecting conductor according to the present invention. J! '7.2
B, 2G, 31! The tip can be inserted into the hole and brazed. The substrate 11 of the thyristor element is connected to the bottom plate 4j of the container via the insulating plate 41! A resin 44 is injected into the interior of the container consisting of a bottom plate 42 and side walls 43 so as to fill the thyristor elements. The protrusion (external lead-out terminal) 23 protruding above the resin 44 is further bent at right angles again along the lid 45 of the container, and is connected to the external conductor together with the nut 46 dropped into the recess of the lid 45. used.

外部導出端子23には第7図に示すように横方向に切り
込み部33を設けることが効果的である。
It is effective to provide the external lead terminal 23 with a notch 33 in the lateral direction as shown in FIG.

切り込み部33は外部応力による圧縮、引張り応力に対
し効果を示す。切り込み部33に注型樹脂44が入り込
んで硬化した場合には、外部導出端子23を引抜こうと
する力に対し大きな抵抗を示す。また樹脂44が入り込
まない時には横方向に働く力に対して強くなる。
The cut portion 33 is effective against compressive and tensile stress caused by external stress. When the casting resin 44 enters the notch 33 and hardens, it exhibits a large resistance to the force that attempts to pull out the external lead-out terminal 23. Moreover, when the resin 44 does not enter, it becomes strong against forces acting in the lateral direction.

第8図に示すように外部導出端子23の第4図に示す折
り曲げ部34、第6図に示す折り曲げ部3I5に、端子
の強度を損なわない程度に溝36を形成するこれにより
、折り曲げが容易になる。勿論、この溝は第4図に示す
周辺枠の他の辺22側の折り曲げ部37に設けてもよい
As shown in FIG. 8, grooves 36 are formed in the bent portion 34 shown in FIG. 4 and the bent portion 3I5 shown in FIG. 6 of the external lead-out terminal 23 to the extent that the strength of the terminal is not impaired. become. Of course, this groove may be provided in the bent portion 37 on the other side 22 side of the peripheral frame shown in FIG.

以上述べたように本発明による接続導体は1枚の電気良
導体板から一体に成形されて内部接続端子と外部導出端
子とを有し、特に逆並列接続サイリスタから構成される
三相整流回路を一つの容器内に収納した半導体装置に有
効に適用できるばかりでなく、他の半導体素子からの回
路構成に際しても組立容易で経済的な半導体装置を製作
できるのでその効果はすこぶる大である。
As described above, the connecting conductor according to the present invention is integrally formed from a single electrically conductive plate and has an internal connecting terminal and an external lead-out terminal, and in particular, connects a three-phase rectifier circuit composed of anti-parallel connected thyristors. Not only can this method be effectively applied to a semiconductor device housed in a single container, but it can also be easily assembled into an economical semiconductor device when configuring a circuit from other semiconductor elements, so its effects are extremely large.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による接続導体の使用される回路の一例
としての三相整流回路の回路図、第2図は第1図の回路
に用いられる接続導体の従来例の斜視図、第3図はそれ
により接続されるサイリスク素子の斜視図、第4図は本
発明による接続導体の一実施例の斜視図、第5図はそれ
により接続されるサイリスタ素子の一例の斜視図、第6
図は第4図の接続導体を使用して組立てた半導体装置の
正面断面図、第7図は同じ装置の一部の側面断面図、第
8図は本発明による接続導体の一部の拡大正面図である
。 21.22!周辺枠、23:突出部(外部導出端子) 
、24.25.2?、 !!8.297内部接続端子、
26:突出部、33:切り込み部、36:溝。
FIG. 1 is a circuit diagram of a three-phase rectifier circuit as an example of a circuit in which the connecting conductor according to the present invention is used, FIG. 2 is a perspective view of a conventional example of the connecting conductor used in the circuit of FIG. 1, and FIG. 4 is a perspective view of an embodiment of a connecting conductor according to the present invention; FIG. 5 is a perspective view of an example of a thyristor element connected thereby; FIG. 6 is a perspective view of an example of a thyristor element connected thereby;
The figure is a front sectional view of a semiconductor device assembled using the connecting conductor shown in FIG. 4, FIG. 7 is a side sectional view of a portion of the same device, and FIG. 8 is an enlarged front view of a portion of the connecting conductor according to the present invention. It is a diagram. 21.22! Peripheral frame, 23: Projection (external lead-out terminal)
, 24.25.2? , ! ! 8.297 internal connection terminal,
26: Projection, 33: Notch, 36: Groove.

Claims (1)

【特許請求の範囲】 1)1枚の電気良導体板から成形され、方形の周辺枠と
その枠の一対の対辺からそれぞれ内方へ同一平面上に伸
びる複数の突出部を有し、突出部の先端は内部接続端子
を形成し、周辺枠の前記の対辺の一方の側は突出部の伸
びる平面に対して垂 。 直に曲げられ突出部に対応して切断されて外部導出端子
を形成することを特徴とする半導体装置用接続導体。 2、特許請求の範囲第1項記載の導体において、外部導
出端子に横方向に切り込み部が形成されたことを特徴と
する半導体装置用接続導体。 3)特許請求の範囲第1項または第2項記載の導体にお
いて、外部導出端子の折り曲げ部に溝が形成されたこと
を特徴とする半導体装置用接続導体。
[Claims] 1) It is formed from a single electrically conductive plate, and has a rectangular peripheral frame and a plurality of protrusions extending inward from a pair of opposite sides of the frame on the same plane, and The tip forms an internal connection terminal, and one side of the opposite side of the peripheral frame is perpendicular to the plane in which the protrusion extends. A connecting conductor for a semiconductor device, characterized in that it is directly bent and cut to correspond to a protruding portion to form an external lead-out terminal. 2. A connecting conductor for a semiconductor device according to claim 1, characterized in that a notch is formed in the external lead terminal in the lateral direction. 3) A connecting conductor for a semiconductor device according to claim 1 or 2, characterized in that a groove is formed in the bent portion of the external lead terminal.
JP21046281A 1981-12-25 1981-12-25 Connection conductor for semiconductor device Granted JPS58112354A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21046281A JPS58112354A (en) 1981-12-25 1981-12-25 Connection conductor for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21046281A JPS58112354A (en) 1981-12-25 1981-12-25 Connection conductor for semiconductor device

Publications (2)

Publication Number Publication Date
JPS58112354A true JPS58112354A (en) 1983-07-04
JPS6347266B2 JPS6347266B2 (en) 1988-09-21

Family

ID=16589728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21046281A Granted JPS58112354A (en) 1981-12-25 1981-12-25 Connection conductor for semiconductor device

Country Status (1)

Country Link
JP (1) JPS58112354A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59110146A (en) * 1982-12-16 1984-06-26 Toshiba Corp Outer lead terminal of package type module
JPH04171754A (en) * 1990-11-02 1992-06-18 Mitsubishi Electric Corp Intelligent power module
EP0791961A3 (en) * 1996-02-22 1998-11-18 Hitachi, Ltd. Power semiconductor module
US6262474B1 (en) 1998-06-01 2001-07-17 Fuji Electric Co., Ltd. Semiconductor device
EP1336990A1 (en) * 2002-02-14 2003-08-20 Abb Research Ltd. Casing for high-voltage resistant power semconductor module

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59110146A (en) * 1982-12-16 1984-06-26 Toshiba Corp Outer lead terminal of package type module
JPH04171754A (en) * 1990-11-02 1992-06-18 Mitsubishi Electric Corp Intelligent power module
EP0791961A3 (en) * 1996-02-22 1998-11-18 Hitachi, Ltd. Power semiconductor module
US6262474B1 (en) 1998-06-01 2001-07-17 Fuji Electric Co., Ltd. Semiconductor device
EP1336990A1 (en) * 2002-02-14 2003-08-20 Abb Research Ltd. Casing for high-voltage resistant power semconductor module
WO2003069968A2 (en) * 2002-02-14 2003-08-21 Abb Research Ltd Housing for a power semiconductor module which is resistant to high voltages
WO2003069968A3 (en) * 2002-02-14 2003-11-13 Abb Research Ltd Housing for a power semiconductor module which is resistant to high voltages
JP2005522022A (en) * 2002-02-14 2005-07-21 アーベーベー・リサーチ・リミテッド Power semiconductor module package that can withstand high voltage
JP4652692B2 (en) * 2002-02-14 2011-03-16 アーベーベー・リサーチ・リミテッド Power semiconductor module that can withstand high voltage

Also Published As

Publication number Publication date
JPS6347266B2 (en) 1988-09-21

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