JPS58124086U - gate drive circuit - Google Patents
gate drive circuitInfo
- Publication number
- JPS58124086U JPS58124086U JP2111682U JP2111682U JPS58124086U JP S58124086 U JPS58124086 U JP S58124086U JP 2111682 U JP2111682 U JP 2111682U JP 2111682 U JP2111682 U JP 2111682U JP S58124086 U JPS58124086 U JP S58124086U
- Authority
- JP
- Japan
- Prior art keywords
- drive circuit
- gate drive
- current transformer
- gate
- switching element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Power Conversion In General (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は逆変換回路の構成を示す回路図、第２図は従来
のオフゲート電流供給回路図、第３図は本考案の一実施
例を説明する回路図、第４図は第３図の要部の詳細を示
す回路図である。
２１・・・変流−１２１ａ、２１ｂ・・・２次巻線、２
２・・・スイッチング素子、２３・・・ダイオード群、
２４・・・ＧＴｏ、２６・・・コンデンサ、２７・・・
抵抗。Fig. 1 is a circuit diagram showing the configuration of an inverse conversion circuit, Fig. 2 is a conventional off-gate current supply circuit diagram, Fig. 3 is a circuit diagram explaining an embodiment of the present invention, and Fig. 4 is a circuit diagram of the conventional off-gate current supply circuit. FIG. 3 is a circuit diagram showing details of main parts. 21...Current transformation-121a, 21b...Secondary winding, 2
2... Switching element, 23... Diode group,
24...GTo, 26...Capacitor, 27...
resistance.
Claims (1)
側に介挿され、変成比の異なる２次巻線を有する変流器
と、この変流器の変成比が大なる２次巻線間に設けられ
、オンオフ制御可能なスイッチング素子、前記変流器の
変成比が小μる２次巻線の一端に接続され、前記スイッ
チング素子がオフの時にのみ前記逆変換回路のゲートタ
ーンオフサイリスタのカッ−下、ゲート間にオフゲート
電流を通流させるダイオード群とを有するゲートドライ
ブ回路。A current transformer is inserted on the output side of an inverse conversion circuit using a gate turn-off thyristor and has secondary windings with different transformation ratios, and a current transformer is provided between the secondary windings with a large transformation ratio. , a switching element that can be turned on and off, connected to one end of the secondary winding of the current transformer with a small transformation ratio, and under the gate turn-off thyristor of the inverse conversion circuit only when the switching element is off; A gate drive circuit that includes a group of diodes that allow an off-gate current to flow between gates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2111682U JPS58124086U (en) | 1982-02-17 | 1982-02-17 | gate drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2111682U JPS58124086U (en) | 1982-02-17 | 1982-02-17 | gate drive circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58124086U true JPS58124086U (en) | 1983-08-23 |
Family
ID=30033247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2111682U Pending JPS58124086U (en) | 1982-02-17 | 1982-02-17 | gate drive circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58124086U (en) |
-
1982
- 1982-02-17 JP JP2111682U patent/JPS58124086U/en active Pending
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