JPS5812386A - Manufacture of semiconductor laser element - Google Patents
Manufacture of semiconductor laser elementInfo
- Publication number
- JPS5812386A JPS5812386A JP56102125A JP10212581A JPS5812386A JP S5812386 A JPS5812386 A JP S5812386A JP 56102125 A JP56102125 A JP 56102125A JP 10212581 A JP10212581 A JP 10212581A JP S5812386 A JPS5812386 A JP S5812386A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- liquid phase
- thin plate
- pbs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000013078 crystal Substances 0.000 claims abstract description 22
- 239000007791 liquid phase Substances 0.000 claims abstract description 19
- 150000001875 compounds Chemical class 0.000 claims abstract description 9
- 239000007788 liquid Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 abstract description 14
- VIDTVPHHDGRGAF-UHFFFAOYSA-N selenium sulfide Chemical compound [Se]=S VIDTVPHHDGRGAF-UHFFFAOYSA-N 0.000 abstract description 12
- 229960005265 selenium sulfide Drugs 0.000 abstract description 12
- 239000007789 gas Substances 0.000 abstract description 6
- 229910052717 sulfur Inorganic materials 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract description 3
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 abstract description 3
- 239000011593 sulfur Substances 0.000 abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052799 carbon Inorganic materials 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 6
- 239000011669 selenium Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 206010011224 Cough Diseases 0.000 description 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 1
- ODUCDPQEXGNKDN-UHFFFAOYSA-N Nitrogen oxide(NO) Natural products O=N ODUCDPQEXGNKDN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0091—Processes for devices with an active region comprising only IV-VI compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体レーザ素子の製造方法の改良に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a method for manufacturing a semiconductor laser device.
鉛（Ｐ’ｔ））を含む化合物半導体例えばテルル化鉛（
、ＰＩ）Ｔθ）やテルル化鉛錫（Ｐｂ１−ｘ５ｎｚＴｅ
）や鉛−硫黄−セレン（ｐｂｓｌ−Ｘｓｅｘ）等は、
そのエネルギーギャップが狭く赤外半導体レーザ素子の
材料として用いられている。Compound semiconductors containing lead (P't), such as lead telluride (
, PI) Tθ) and lead tin telluride (Pb1-x5nzTe
) and lead-sulfur-selenium (pbsl-Xsex), etc.
Due to its narrow energy gap, it is used as a material for infrared semiconductor laser devices.
特にＰｂ５ｌ−ＸｓｅＸの材料を用いたレーザ素子は、
−酸化窒素（Ｎｏ）ガスや二酸化窒素（ＮＯｇ ）ガス
のような公害を発生するガスの吸収ピーク波長に合った
４〜８μｍ帯の発振をするのでそのよりなガスの分光分
析用赤外光源素子として用いられている。In particular, a laser element using Pb5l-XseX material is
- Infrared light source element for spectroscopic analysis of gases that generate pollution, such as nitrogen oxide (No) gas and nitrogen dioxide (NOg) gas, because it oscillates in the 4-8 μm band that matches the absorption peak wavelength of those gases. It is used as.
ところで一般に前記ＰｂＳ １−ｚｓｅｚ材料のうち硫
ｊｌｌ（（Ｓ）やセレン（Ｓｅ）は蒸気圧が高く易蒸発
性の成分であるので、７ライデング法を用いた液相エビ
タキシャ〃成長方法の適用が困難で、従来のこの種レー
ザ素子は相互拡散を利用した単一へテロ接合のダイオー
ドレーザとして構成されていた。By the way, in general, sulfur (S) and selenium (Se) among the PbS 1-zsez materials have high vapor pressure and are easily evaporated components, so it is not possible to apply the liquid phase epitaxia growth method using the 7-riding method. This is difficult, and conventional laser devices of this type have been constructed as single heterojunction diode lasers that utilize interdiffusion.
つまり従来の技術では硫化鉛（ｐｂｓ ）の基板上に前
記Ｐ’ｌ）Ｓ １−ｚｓｅｚの結晶層を活性層として形
成し、その上に更Ｋ ｐｂｓの結晶層をＦツブ層として
形成し、前記活性層で生じたレーザ光を活性層と基板お
よび活性層とトップ層とのへテロ界面に閉じこめるよう
にしたいわゆるレーザ発振を開始するし０１／１値電流
の小さい高効率のダブルヘテロ型レーザ素子を得るのが
困難であった。In other words, in the conventional technology, a crystal layer of P'l)S 1-zsez is formed as an active layer on a substrate of lead sulfide (pbs), and a crystal layer of K pbs is further formed as an F layer on top of the active layer. The laser beam generated in the active layer is confined in the hetero interface between the active layer and the substrate and the active layer and the top layer to initiate so-called laser oscillation, and is a highly efficient double hetero type laser with a small 01/1 value current. It was difficult to obtain the device.
本発明は上述した欠点を除去するような半導体レーザ素
子の製造方法の提供を目的とするものでＴｏシ、さらに
具体的には易蒸発性の成分元素を含んだ半導体よりなる
ダブルへテロ接合構造のレーザ素子を液相エビタキＶヤ
ル法で実現する方法を提案するものである。簡巣に述べ
ると本発明は蒸気圧の低いＰｂＳまたはＰｂＳＳｅのよ
うな化合物の形からＳ −？ ＳＳｅをＰｂｍ謀中に溶
は込ませることによｌ）Ｓ、Ｂｅの消失を抑制して液相
エビタキシャμ成長を可能とするものである。そして本
発明の製法は、支持台に鉛を含む化合物半導体基板と該
基板上に積層して形成すべき結晶層を構成する成分のう
ち易蒸発性成分と鉛との化合物よりなるダミー用薄板を
形成すべき結晶層の数だけ埋設し、前記支持台上をスラ
イドして移動するスライド部材に前記基板上に形成すべ
き結晶層の数だけ鉛の液相が充填されている液だめを設
け、前記液だめをダミー用薄板上に移動されて、Ｉｔｌ
紀鉛の液相にダミー用薄板の易蒸発性成分を溶解させ、
しかる後該液だめを順次基板上に移動させて静置させ、
前記液相の温度を下降させて基板上に順次結晶層を積層
して形成する工程を含むことを特徴とするものである。The present invention aims to provide a method for manufacturing a semiconductor laser device that eliminates the above-mentioned drawbacks. This paper proposes a method for realizing a laser device using the liquid phase evaporation method. Briefly stated, the present invention utilizes S-? By dissolving SSe into Pbm, the loss of S and Be is suppressed and liquid phase epitaxia μ growth is made possible. The manufacturing method of the present invention includes a lead-containing compound semiconductor substrate and a dummy thin plate made of a compound of lead and an easily evaporated component among the components constituting the crystal layer to be laminated on the substrate. Providing a liquid reservoir filled with a liquid phase of lead corresponding to the number of crystal layers to be formed on the substrate, embedded in the same number of crystal layers to be formed on the substrate, and provided on a slide member that slides and moves on the support base. The liquid reservoir is moved onto a dummy thin plate and
The easily evaporable components of the thin plate for the dummy are dissolved in the liquid phase of lead,
After that, the liquid reservoirs are sequentially moved onto the substrate and left standing,
The method is characterized in that it includes a step of lowering the temperature of the liquid phase and sequentially stacking crystal layers on the substrate.
以下図面を用いながら本発明の一実施例につき詳細に説
明する。An embodiment of the present invention will be described in detail below with reference to the drawings.
第１図は本発明の半導体レーザ素子を形成するための装
置の概略図で、第２図は本発明の方法によって形成した
半導体レーザ素子の材料の断面図である。FIG. 1 is a schematic diagram of an apparatus for forming a semiconductor laser device of the present invention, and FIG. 2 is a cross-sectional view of the material of the semiconductor laser device formed by the method of the present invention.
図示するように液相エピタキシャル成長装置を構成する
カーボンよりなる支持台１には例えばＰ型のＰｂＳの基
板２と易蒸発性の成分の硫化セレン（ＳＳｅ ）とｐｂ
の化合物のＰｂ５ｌ−ｘＳθＸのダミー用薄板８と硫黄
（Ｓ）とｐｂの化合物の硫化鉛（ｐｂｓ ＞のダミー用
薄板４とが埋設されている。ここで前記薄板８および４
にはＰｍのドーパントのタリウム（Ｔ＃）が添加されて
いる。一方前記液相エビタキシャル成長装置を構成し、
前記支持台上を移動するスライド部材６には、ＰｂＯ液
相を収容する液だめ６．７が設けられておシ該液だめ中
にはＰｂが充填されている。As shown in the figure, a support base 1 made of carbon, which constitutes a liquid phase epitaxial growth apparatus, includes a substrate 2 of, for example, P-type PbS, selenium sulfide (SSe), an easily evaporable component, and Pb.
A dummy thin plate 8 of a compound of Pb5l-xSθX and a dummy thin plate 4 of lead sulfide (pbs) of a compound of sulfur (S) and pb are buried.
Thallium (T#), which is a Pm dopant, is added to the Pm dopant. Meanwhile, the liquid phase epitaxial growth apparatus is configured,
The slide member 6 that moves on the support table is provided with a liquid reservoir 6.7 containing a PbO liquid phase, and the liquid reservoir is filled with Pb.
ここで前１１ｉ３ｐｂｓｓθのダミー用薄板８とＰｂＳ
のダミー用薄板４とは、ブリッジマン法等を用いて前記
易蒸発性の成分のＳおよびＳｅの成分が蒸発しないよう
Ｋして形成される。Here, the dummy thin plate 8 of the front 11i3pbssθ and PbS
The dummy thin plate 4 is formed by using the Bridgman method or the like to prevent the easily evaporable components S and Se from evaporating.
ヒのような液相エビタキシャＡ／成長装置を水素（Ｈ８
）ガス雰囲気中の反応管中へ挿入したのち、咳反応管を
６００℃の温度に加熱炉にて加熱する。Hydrogen (H8)
) After being inserted into a reaction tube in a gas atmosphere, the cough reaction tube is heated to a temperature of 600° C. in a heating furnace.
このようにしてスライド部材の液だめ内のｐｂが溶解し
た時点で前記スライド部材を矢印Ａ方向に移動させる。In this way, when the PB in the liquid reservoir of the slide member is dissolved, the slide member is moved in the direction of arrow A.
その漬液だめ６をダミー用薄板８上に移動させ、該液だ
め６内のｐｂの液相にｐｂｓｓｅの薄板８の硫化セレン
（ＳＳｅ ）の成分を飽和させる。ｔたこのとき液だめ
７内のＰｂの液相がダミー用薄板４上に移動するように
しておき前記液だめ７内のｐｂの液相にＰＩ）Ｓの薄板
４のＳの成分を飽和させる。The soaking liquid reservoir 6 is moved onto a dummy thin plate 8, and the liquid phase of PB in the liquid reservoir 6 is saturated with the selenium sulfide (SSe) component of the PBSSE thin plate 8. At this time, the Pb liquid phase in the liquid reservoir 7 is moved onto the dummy thin plate 4, and the S component of the PI)S thin plate 4 is saturated with the Pb liquid phase in the liquid reservoir 7. .
その後スフイド部材を矢印Ａ方向に更に移動させ液だめ
６をＰｂＳの基板２上に静置させ更に加熱炉の温度を所
定の温度勾配にて下降させながら基和
板２上に過飽−状態となつ九ＰｂＳＳｅの成分を第１層
の活性層として析出させＰｍのＰｂＳ １−ｘｓθＸの
結晶を形成する。Thereafter, the sulphide member is further moved in the direction of arrow A, and the liquid reservoir 6 is left still on the PbS substrate 2, and the temperature of the heating furnace is further lowered at a predetermined temperature gradient to create a supersaturated state on the substrate 2. A component of PbSSe is precipitated as a first active layer to form Pm PbS 1-xsθX crystals.
その後加熱炉の温度を所定の温度勾配で降下させつつス
ライド部材を更に矢印Ａ方向に移動させ、液だめ７を基
板２上に静置させ基板２上に過飽和状頗となったＰｂＳ
の成分を第２層のトップ層として析出させＰ型のｐ’ｂ
ｓの結晶を形成する。Thereafter, the slide member was further moved in the direction of arrow A while lowering the temperature of the heating furnace at a predetermined temperature gradient, and the liquid reservoir 7 was left still on the substrate 2, so that the PbS which became a supersaturated state on the substrate 2
The components of P-type p'b are precipitated as the top layer of the second layer.
form a crystal of s.
このようにすれば第２図に示すようにＰｂＳの基板２上
に易蒸発性成分のＳＳｅが導入されたｐａｉ！のｐｂｓ
１−２ｓｅｚの結晶層が第１層の活性層１１の結晶層
として形成され更にその上には易蒸発性成分のＳが導入
されたＰｆＪのｐ’ｂｓの結晶層が第２層のトップ層１
２の結晶層として形成され死生導体レーザ素子用材料が
得られる。In this way, as shown in FIG. 2, the easily evaporable component SSe is introduced onto the PbS substrate 2! pbs
A crystal layer of 1-2 sez is formed as the crystal layer of the first active layer 11, and on top of that, a PfJ p'bs crystal layer into which S, an easily evaporable component, is introduced is the top layer of the second layer. 1
A material for a dead conductor laser element is obtained.
また本発明の方法によれば活性層のＰｂ５ｌ−７ｓ６１
Ｘの結晶層におけるＳとＳθ組成比（Ｘ値）を変化させ
ゐには前述したＰｂ５ｌ−ｚＳｅｚダミー用薄板に含有
されるＳＳｅの含有量をあらかじめ所定の値に定めてお
けばよい。Furthermore, according to the method of the present invention, Pb5l-7s61 in the active layer
In order to change the S and Sθ composition ratio (X value) in the X crystal layer, the content of SSe contained in the Pb5l-zSez dummy thin plate described above may be determined in advance to a predetermined value.
を九前記基板にＮ型のＰｂＳ基板を用い活性層およびト
ップ層にＮｍの伝導型を付与するには、前記ダミー用薄
板８．４にＮ５の伝導型を付与するビスマス（Ｂ１）の
不純物をあらかじめ添加しておけば容易に前記不純物が
添加できる。このようにＰ型、Ｎ型の不純物が所定の濃
度で容易に添加できる。(9) In order to use an N-type PbS substrate as the substrate and impart a Nm conductivity type to the active layer and top layer, bismuth (B1) impurity to impart an N5 conductivity type to the dummy thin plate 8.4 is added. The impurity can be easily added if it is added in advance. In this way, P-type and N-type impurities can be easily added at a predetermined concentration.
以上述べたように本発明の方法によれば易蒸発性成分の
ＳＳｅやＳが所定量ｐｂＯ液相中に溶けこむことになり
、所望の組成の活性層およびトップ層の結晶層が得られ
ることになり、所望の特性を有する半導体レーザ素子が
得られる利点を生じる。As described above, according to the method of the present invention, easily vaporizable components such as SSe and S are dissolved in a predetermined amount into the pbO liquid phase, and an active layer and a top layer crystal layer having a desired composition can be obtained. This brings about the advantage that a semiconductor laser device having desired characteristics can be obtained.
第１図は本発明の方法を実施するために用いる装置の概
略図、第２図は本発明の方法によって形成されたレーザ
素子用材料の断面図である。
図において１は支持台、２は基板、８はＰｂ５ｌ−ＸＳ
ｅＸのダミー用薄板、４はＰｔ）Ｓのダミー用薄板、６
はスライド部材、６．７は液だめ、ｔｔは活性層、１２
はトップ層、Ａはスライド方向を示す矢印である。FIG. 1 is a schematic diagram of an apparatus used to carry out the method of the present invention, and FIG. 2 is a cross-sectional view of a material for a laser element formed by the method of the present invention. In the figure, 1 is a support stand, 2 is a substrate, and 8 is Pb5l-XS
eX dummy thin plate, 4 Pt)S dummy thin plate, 6
is a slide member, 6.7 is a liquid reservoir, tt is an active layer, 12
is the top layer, and A is an arrow indicating the sliding direction.
Claims (1)
て形成すべき結晶層を構成する成分のうち易蒸発性成分
と鉛との化合物よりなるダミー用薄板を形成すべき結晶
層の数だけ埋設し、前記支持台上をスライドして移動す
るスライド部材に、前記基板上に形成すべき結晶層の数
だけ鉛の液相が充填されている液だめを設け、前記液だ
めをダミー用薄板上に移動させて前記鉛の液相中にダミ
ー用薄板の易蒸発性成分を溶解させ、しかる後該液だめ
を順次基板上に移動させて静置させ、前記液相の温度を
下降させて基板上に順次結晶層を積層して形成する工程
を含むことを特徴とする半導体レーザ素子の製造方法。A compound semiconductor substrate containing lead on a support base, and the number of crystal layers to form a dummy thin plate made of a compound of lead and an easily evaporated component among the components constituting the crystal layer to be laminated on the substrate. A slide member that slides and moves on the support base is provided with a liquid reservoir filled with lead liquid phase equal to the number of crystal layers to be formed on the substrate, and the liquid reservoir is used as a dummy. The easily evaporable components of the dummy thin plate are dissolved in the lead liquid phase by moving the liquid onto the thin plate, and then the liquid reservoirs are sequentially moved onto the substrate and left standing to lower the temperature of the liquid phase. 1. A method of manufacturing a semiconductor laser device, comprising the step of sequentially stacking crystal layers on a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56102125A JPS5812386A (en) | 1981-06-29 | 1981-06-29 | Manufacture of semiconductor laser element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56102125A JPS5812386A (en) | 1981-06-29 | 1981-06-29 | Manufacture of semiconductor laser element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5812386A true JPS5812386A (en) | 1983-01-24 |
| JPS6246079B2 JPS6246079B2 (en) | 1987-09-30 |
Family
ID=14319060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56102125A Granted JPS5812386A (en) | 1981-06-29 | 1981-06-29 | Manufacture of semiconductor laser element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5812386A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60132633A (en) * | 1983-12-22 | 1985-07-15 | Sumitomo Chem Co Ltd | Metering and solution-preparing apparatus |
| JPH01213468A (en) * | 1988-02-18 | 1989-08-28 | Kanebo Ltd | Charging of chemical and system therefor |
| JPH01213466A (en) * | 1988-02-17 | 1989-08-28 | Kanebo Ltd | Power-metering system in dyeing solution preparation machine |
| JPH0810599A (en) * | 1995-06-26 | 1996-01-16 | Sumitomo Chem Co Ltd | Liquid adjusting method |
-
1981
- 1981-06-29 JP JP56102125A patent/JPS5812386A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60132633A (en) * | 1983-12-22 | 1985-07-15 | Sumitomo Chem Co Ltd | Metering and solution-preparing apparatus |
| JPH0518622B2 (en) * | 1983-12-22 | 1993-03-12 | Sumitomo Chemical Co | |
| JPH01213466A (en) * | 1988-02-17 | 1989-08-28 | Kanebo Ltd | Power-metering system in dyeing solution preparation machine |
| JPH0461105B2 (en) * | 1988-02-17 | 1992-09-29 | Kanebo Ltd | |
| JPH01213468A (en) * | 1988-02-18 | 1989-08-28 | Kanebo Ltd | Charging of chemical and system therefor |
| JPH0810599A (en) * | 1995-06-26 | 1996-01-16 | Sumitomo Chem Co Ltd | Liquid adjusting method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6246079B2 (en) | 1987-09-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Turkevych et al. | Strategic advantages of reactive polyiodide melts for scalable perovskite photovoltaics | |
| US4115163A (en) | Method of growing epitaxial semiconductor films utilizing radiant heating | |
| US3093517A (en) | Intermetallic semiconductor body formation | |
| JPS56135969A (en) | Manufacture of semiconductor device | |
| JPS5889874A (en) | Thin film solar photocell and method of producing same | |
| KR880005665A (en) | Method and apparatus for crystallizing a semiconductor material layer on an insulating layer | |
| US4095011A (en) | Electroluminescent semiconductor device with passivation layer | |
| Lan et al. | Revealing Electrical‐Poling‐Induced Polarization Potential in Hybrid Perovskite Photodetectors | |
| Harman | Slider LPE of Hg 1-x Cd x Te using mercury pressure controlled growth solutions | |
| Li et al. | Controllable Heterogeneous Nucleation for Patterning High‐Quality Vertical and Horizontal ZnO Microstructures toward Photodetectors | |
| US3873341A (en) | Rapid conversion of an iron oxide film | |
| JPS5812386A (en) | Manufacture of semiconductor laser element | |
| US4126732A (en) | Surface passivation of IV-VI semiconductors with As2 S3 | |
| JPH0525839B2 (en) | ||
| Bowers et al. | Comparison of Hg 0.6 Cd 0.4 Te LPE layer growth from Te-, Hg-, and HgTe-rich solutions | |
| JPS6230693B2 (en) | ||
| Shear et al. | Oxygen chemisorption effects on photoconductivity in sintered layers | |
| US3642529A (en) | Method for making an infrared sensor | |
| JPS5913697A (en) | Liquid phase epitaxial growth device | |
| US4287848A (en) | Apparatus for the manufacture of epitaxial Ga1-x Alx As:Si film | |
| JPS56126914A (en) | Manufacture of semiconductor device | |
| JPS5856378A (en) | Manufacture of semiconductor laser element | |
| JPH0249278B2 (en) | EPITAKISHARUKETSUSHOSEICHOSOCHI | |
| JPS6250066B2 (en) | ||
| Molenda et al. | Unmasking the magic of magic blue in perovskite doping |