JPS58122694A - Storage device - Google Patents

Abstract

PURPOSE:To store >=1 information at crossing points, by adding >=1 substance having a specific exciting mode at the crossing sections between row and column lines in matrix and using inelastic tunnel effect. CONSTITUTION:Electrodes 31-35 arranged in row direction area made of Al and electrodes 41-45 arranged in column direction are made of Pb. The insulator inserted at the cross point of the electrodes is added with an additive substance such as benzene and benzoate, and a bias corresponding to the energy of exciting mode specific to the additives is applied, then sudden increase in current is caused and the inelastic effect phenomenon takes place. In using the additives >=2 kinds, the current sudden increasing points are >=2 points and >=2-bit of information can be stored at the cross points. Thus, a lot of information is stored.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a memory device using an inelastic tunnel effect◎ Technical background of the invention Fig. 1 shows the structure of an elastic tunnel junction, where Jl is an electrode conductor made of aluminum, 12 is an insulator made of Aj20, and 13 is an electrode conductor made of pb. Figure 2 shows a band diagram when voltage is applied between both electrode conductors JJ and JJ in such a tunnel junction. lol.

As shown in Figure 2, when a voltage is applied, the electrons at the right w pole move to the left due to the elastic tunnel effect, causing a current to flow. The voltage-current characteristics at this time are shown in FIG. In Figure 3,
The "/dV characteristic caused by the voltage is as shown by the broken line. Therefore, as shown in FIG. 1, the 1[r output current characteristic becomes parabolic.

By the way, the tunnel junction as shown in FIG. 1 utilizes the elastic tunnel effect, and the voltage 1l flow characteristics change continuously.

Problems with the Background Art However, it has not been possible to create a storage device using such an elastic tunnel effect.

Object of the Invention The present invention has been made in view of the above points, and its object is to provide a storage device ilt that utilizes the inelastic tunnel effect.

Summary of the invention: Both electrodes are arranged in the row and column direction, and the intersection of these is used as an inelastic tunnel junction. Before attaching the upper electrode, information is generated by adding some substance to the position of the foot that is the intersection. is stored, and its readout determines whether it is present or absent based on whether a sudden increase in current occurs or not at a predetermined voltage.

EXAMPLES OF THE INVENTION Hereinafter, with reference to all the drawings, -! ! An example will be explained. In Fig. 4, 2 is an electrode conductor made of aluminum, 22 is an insulator such as υ203, and 23FiPbj#
) is the electrode conductor. A cooling substance 24 such as benzene or benzoic acid is added to this insulator 22KId.

! A band diagram IIi of the structure shown in FIG. 4 is shown in FIG.

In Fig. 5, when the voltage is increased above the excitation mode of the substance added to the entire junction, the process of exciting this mode and tunneling is added as shown by the solid line in the figure, so when the current increases, v - 1 curve and its differentiated song # are shown in FIG. When the characteristic curve IiMt in FIG. 6 is compared to the characteristic 1 in FIG. 3, the current increases rapidly at a bias of 1107/. In this case, the bias value does not depend on the type of sensual electrode. Here, hω is the energy of the excitation mode. For example, when the additive is benzene or benzoic acid, a sudden increase in current occurs at 0.36V and 0.4V.

FIG. 7 shows a storage device that makes full use of the above-mentioned inelastic tunnels. In the figure, 31 to 35 are w' poles arranged in the row direction, and are made of, for example, -fulminilam. Also, 41 to 45 are introduced with electrodes arranged in the evening direction!
For example, it consists of pb. When the above-mentioned additive substance is added to the insulator interposed at the intersection of the electrodes arranged in the row direction and the baskets and poles arranged in the direction, A current surge occurs when a bias corresponding to the energy of the excitation mode is applied. In this way, by detecting a sudden increase in V (resulting in the upper stroke rncQ-) due to the addition of the cold material, it is possible to detect whether there is 1-bit information at the intersection of the row direction electrode and the direction IJ direction electrode. detected. As a practical matter, dI/dVh.

It may also be detected.

Furthermore, if two or more types of skin substances are added to the insulators interposed at the intersection, there will be two or more locations where the current increases sharply, so it is possible to store 2-bi and 3-level information at the intersection.

Effects of the Invention As detailed above, by selecting several types of materials having excitation modes of different energies, this invention can increase the number of intersections and the number of types of additive materials without changing the number of wires in the row and nine column directions. It is possible to store a large amount of information multiplied by .

[Brief explanation of drawings]

Figure 1 shows the structure of the elastic tunnel junction, Figure 2 shows the band diagram, and Figure 3 shows the voltage-current ratio.
Fig. 4 shows the structure of an inelastic tunnel junction, Fig. 5 shows the band diagram, Fig. 6 Fi
11 and 7, which show piezoelectric current characteristics, are diagrams showing a memory device according to the present invention. 11.13, 21.23... Electrode conductor, 12°22.
...Insulator, 24...Additive substance 31~35°41~
45...electrode. Figure 1 Figure 2 L-1)-J Figure 3 Figure 4

Claims (1)

[Claims] M) Adding one or more kinds of substances having a unique excitation mode to the alternating parts of row lines and column lines arranged in a box shape, and storing one or more kinds of information in the alternating parts. A storage device characterized by: