JPS58122467U - solar cells - Google Patents
solar cellsInfo
- Publication number
- JPS58122467U JPS58122467U JP140583U JP140583U JPS58122467U JP S58122467 U JPS58122467 U JP S58122467U JP 140583 U JP140583 U JP 140583U JP 140583 U JP140583 U JP 140583U JP S58122467 U JPS58122467 U JP S58122467U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- solar cells
- semiconductor device
- solar cell
- irradiated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は太陽電池の変換効率の温度に対する影響を示し
たものである。第2図は本考案の実施例を示したもので
ある。FIG. 1 shows the effect of solar cell conversion efficiency on temperature. FIG. 2 shows an embodiment of the present invention.
Claims (1)
、前弓光照射がなされる半導体表面とは反対側の面の少
なくとも一部に冷却用ダクトを隣□ 接させるととも
に、前記珪素を主成分とする半導体の表面側の半導体の
エネルギーギャップは1.5〜3eVを有することを特
徴とする太陽電池。In a semiconductor device that generates a photovoltaic force by irradiation, a cooling duct is adjacent to at least a part of the surface of the semiconductor opposite to the surface of the semiconductor that is irradiated with the front light, and the semiconductor device is made of silicon as a main component. A solar cell characterized in that the energy gap of the semiconductor on the surface side of the semiconductor is 1.5 to 3 eV.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP140583U JPS58122467U (en) | 1983-01-10 | 1983-01-10 | solar cells |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP140583U JPS58122467U (en) | 1983-01-10 | 1983-01-10 | solar cells |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58122467U true JPS58122467U (en) | 1983-08-20 |
Family
ID=30014422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP140583U Pending JPS58122467U (en) | 1983-01-10 | 1983-01-10 | solar cells |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58122467U (en) |
-
1983
- 1983-01-10 JP JP140583U patent/JPS58122467U/en active Pending
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