JPS58121599A - X-ray generating device - Google Patents

X-ray generating device

Info

Publication number
JPS58121599A
JPS58121599A JP57003709A JP370982A JPS58121599A JP S58121599 A JPS58121599 A JP S58121599A JP 57003709 A JP57003709 A JP 57003709A JP 370982 A JP370982 A JP 370982A JP S58121599 A JPS58121599 A JP S58121599A
Authority
JP
Japan
Prior art keywords
groove
rays
electrodes
plasma
ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57003709A
Other languages
Japanese (ja)
Inventor
Katsuhiro Kawabuchi
川「淵」 勝弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57003709A priority Critical patent/JPS58121599A/en
Publication of JPS58121599A publication Critical patent/JPS58121599A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G1/00X-ray apparatus involving X-ray tubes; Circuits therefor
    • H05G1/02Constructional details

Landscapes

  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To lessen an X-rays' emanative disposition causing a half X-raying blur, to the smallest possible extent, by making up this device to form a groove interconnecting both main surfaces of an insulator and simultaneously to lay electrodes on said surfaces respectively, while connecting a condenser and a high voltage power source together in a space between these electrodes. CONSTITUTION:When the charge in a condenser 25 is discharged by a trigger electrode, plasma is produced inside a groove 22 and X-rays 27 are radiated out of the groove 22. At this time, since the plasma is concentrated at the bottom of the groove 22 in particular, the X-rays are mainly radiated out of the bottom of the groove 22. Therefore, it means that the upper part of the groove 22 prevents the X-rays 27 from emanating in an x direction. In addition, as the groove is curved in form, emanation of the X-rays in a y direction is also obviated. In this way, such X-rays as being small in an emanative disposition in two directions can be secured. Likewise, electrodes 23 and 24 are so formed as to cover only the bottom of the groove 22 so that concentration of the plasma at the bottom of the groove 22 can be ever intensified whereby the emanative disposition of the X-rays 27 can be lessened yet smaller.

Description

【発明の詳細な説明】 発明の技術分野 本発明は、X線露光装置等に用いられるxfj!発生装
置に係わり、特に非発散性のX線を発生するX線発生装
置に関する。
DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to an xfj! The present invention relates to an X-ray generator, and particularly relates to an X-ray generator that generates non-divergent X-rays.

発明の技術的背景とその問題点 近時、より高性能な半導体集積回路を製造するために、
■〔μm〕或いはそれ以下の寸法を有する微細パターン
を、半導体基板上に形成する要求が高まっている。X線
(主に4〜13Xの軟X線)を使用したパターン転写技
術であるX線露光法は、塵埃の影響を受は難い、転写さ
れたパターンの精度が極めて高い等の多くの特長があり
、特にザブミクロン・臂ターン形成において有力な技術
とされている。
Technical background of the invention and its problems Recently, in order to manufacture higher performance semiconductor integrated circuits,
(2) There is an increasing demand for forming fine patterns having dimensions of [μm] or smaller on semiconductor substrates. The X-ray exposure method, which is a pattern transfer technology that uses X-rays (mainly soft X-rays of 4 to 13 It is considered to be a powerful technique, especially in the formation of Zabumicron and arm turns.

第1図はX線露光の原理を示す模式図である。FIG. 1 is a schematic diagram showing the principle of X-ray exposure.

図中1はX線露光用マスクで、このマスク1はX線に対
し透過率の高い部材からなる薄膜基板2および該基板2
の下面にX線吸収部材からなるマスク・平ターン3を取
着して形成されている。
In the figure, 1 is an X-ray exposure mask, and this mask 1 includes a thin film substrate 2 made of a material with high transmittance to X-rays, and the substrate 2
A mask/flat turn 3 made of an X-ray absorbing member is attached to the lower surface of the mask.

9− マスク1の下方にはレジスト4を塗布された試料5が配
置され、またマスク1の上方にはX線源(X線発生装置
)6が配置される。そして、X線源6からマスク1にX
線7を照射することによシ、マスク1を透過したX線が
試料5上のし・シスト4に照射され、同レジスト4が所
望パターンに露光されることになる。
9- A sample 5 coated with a resist 4 is placed below the mask 1, and an X-ray source (X-ray generator) 6 is placed above the mask 1. Then, from the X-ray source 6 to the mask 1,
By irradiating the resist line 7, the X-rays transmitted through the mask 1 are irradiated onto the resist 4 on the sample 5, and the resist 4 is exposed in a desired pattern.

ところで、前記X線源6としては、通常金属ターグット
を高速の電子ビームで衝撃することにより金属ターグッ
トから主として特性X線を放出させる衝撃型のX線源が
用いられる。そして、このようなX線源にあっては次の
2つの欠点があった。
Incidentally, as the X-ray source 6, an impact-type X-ray source is usually used, which mainly emits characteristic X-rays from the metal targut by bombarding the metal targut with a high-speed electron beam. Such an X-ray source has the following two drawbacks.

(]、CX線出力が小さいため、X線露光の処理速度(
単位時間当シに露光できるウェノ・枚数)が低い。
(], Because the CX-ray output is small, the processing speed of X-ray exposure (
The number of sheets that can be exposed per unit time is low.

(2)点源ではなく広がりを持った発散X線源であるた
め、転写したパターンに半影ボケ8が生じ解像度の低下
を招く。
(2) Since the X-ray source is not a point source but a spread out divergent X-ray source, penumbra blur 8 occurs in the transferred pattern, resulting in a decrease in resolution.

このような欠点を解決するものとして、最近放電プラズ
マX線源(Journal of the 0ptic
al 5ocietyof America 、 Vo
l 58 、 No 2− P 203 、1968年
;第42回応用物理学会学術講演会予稿集1981年。
As a solution to these drawbacks, a discharge plasma X-ray source (Journal of the Optic X-ray source) has recently been developed.
al 5ociety of America, Vo
158, No. 2-P. 203, 1968; Proceedings of the 42nd Academic Conference of the Japan Society of Applied Physics, 1981.

358頁9P−G−1,9P−G−2)が開発された。358 pages 9P-G-1, 9P-G-2) were developed.

この放電プラズマX線源は、第2図に示す如く高電圧電
源1ノによシコンガ′ンサ12に蓄積した電荷を電極1
3.14間で放電させ、絶縁体15に設けた貫通孔16
内にプラズマを誘発させてX線17を発生させるもので
ある。
This discharge plasma X-ray source, as shown in FIG.
3. Through hole 16 provided in insulator 15 by discharging between
X-rays 17 are generated by inducing plasma within the body.

なお、図中18は電極Z 3.14間の放電を起動せし
めるためのトリが電極を示している。
Note that 18 in the figure indicates an electrode for starting the discharge between the electrodes Z3 and 14.

このような放電プラズマX線源は、衝撃型のX線源に比
してX線発生効率が極めて高く、高出力のX線を得るこ
とができる。しかしながら、放電プラズマX線源は衝撃
型のX線源と同様に広がりを持った発散X線源であシ、
このため前述し九半影ボケに起因する解像度の低下の問
題を解決することはできなかった。
Such a discharge plasma X-ray source has extremely high X-ray generation efficiency compared to an impact type X-ray source, and can obtain high-power X-rays. However, a discharge plasma X-ray source is a divergent X-ray source with a spread similar to an impact type X-ray source.
For this reason, it has not been possible to solve the aforementioned problem of reduced resolution caused by penumbral blur.

発明の目的 本発明の目的は、半影ボケの原因となるX線の発散性を
極めて小さくすることができ、X線露光における処理速
度および解像度の向上環に寄与し得るX線発生装置を提
供することにある。
OBJECTS OF THE INVENTION An object of the present invention is to provide an X-ray generator that can extremely reduce the divergence of X-rays that causes penumbra blur, and that can contribute to improving processing speed and resolution in X-ray exposure. It's about doing.

発明の概要 本発明は、絶縁体の両主面を連通ずる溝を設けると共に
絶縁体の両主面にそれぞれ電極を被着し、これらの電極
間にコンデンサおよび高電圧電源を接続してなるもので
、上記溝の上方にX線を放射せしめるようにしたもので
ある。
Summary of the Invention The present invention is constructed by providing a groove that communicates between both main surfaces of an insulator, attaching electrodes to both main surfaces of the insulator, and connecting a capacitor and a high voltage power source between these electrodes. In this case, X-rays are emitted above the groove.

発明の効果 本発明によれば、X線の放射方向が溝の形成方向と平行
な面内に規制されるので、X線の発散性を小さくするこ
とができる。さらに、溝を湾曲して形成することにより
、X線の放射方向を溝の形成方向と直交する方向に規制
することができ、X線の発散性を極めて小さくすること
ができる。このため、X線露光に適用した場合、半影ボ
ケの発生を大幅に少なくすることができ、解像度の向上
をはかり得る。しかも、従来の衝撃型のものに比して高
出力であるため、処理速5一 度の向上をはかり得る等の効果を奏する。
Effects of the Invention According to the present invention, the radiation direction of the X-rays is restricted within a plane parallel to the direction in which the grooves are formed, so that the divergence of the X-rays can be reduced. Furthermore, by forming the grooves in a curved manner, the radiation direction of the X-rays can be restricted to a direction perpendicular to the direction in which the grooves are formed, and the divergence of the X-rays can be made extremely small. Therefore, when applied to X-ray exposure, the occurrence of penumbra blur can be significantly reduced, and resolution can be improved. Moreover, since it has a higher output than the conventional impact type, it has the effect of increasing the processing speed by 5 times.

発明の実施例 第3図は本発明の一実施例を示す概略構成図である。図
中21はポリエチレンからなる長さ20 (wn)の直
方体(絶縁体)であり、この直方体の上面には幅1 [
ml 、深さ10 [m、]の湾曲した溝22が設けら
れている。溝22と交差するれらの電極23.24間に
は、容量100〔μF〕のコンデンサ25が接続されて
いる。そして、このコンデンサ25は100[kV]の
高電圧電源26によって充電されるものとなっている。
Embodiment of the Invention FIG. 3 is a schematic diagram showing an embodiment of the invention. In the figure, 21 is a rectangular parallelepiped (insulator) made of polyethylene with a length of 20 (wn), and the upper surface of this rectangular parallelepiped has a width of 1 [
A curved groove 22 of ml and depth 10 [m,] is provided. A capacitor 25 with a capacitance of 100 [μF] is connected between these electrodes 23 and 24 that intersect with the groove 22. This capacitor 25 is charged by a high voltage power supply 26 of 100 [kV].

このように構成されたX線発生装置において、図示しな
いトリガ電極によシコンデンサ25の電荷を放電させる
と、溝22内にプラズマが発生し、溝22からX線27
が放射される。ここで、プラズマは特に溝22の底部に
集中するので、X線は主として溝22の底部から放射さ
れる。このため、溝22の上部がX線27のX方6− 向への発散を防止することになる。さらに、溝22が湾
曲しているのでX線のX方向への発散も防止されること
になる。かくして、本装置によれば2方向への発散性の
小さいX線を得ることができる。また、電極23.24
を溝22の底部のみを覆うように形成しているので、プ
ラズマの溝22の底部への集中を強めることができ、こ
れによりX線27の発散性をより一層小さくすることが
できる。
In the X-ray generator configured as described above, when the charge in the capacitor 25 is discharged by a trigger electrode (not shown), plasma is generated in the groove 22 and X-rays 27 are emitted from the groove 22.
is emitted. Here, since the plasma is particularly concentrated at the bottom of the groove 22, the X-rays are mainly emitted from the bottom of the groove 22. Therefore, the upper part of the groove 22 prevents the X-rays 27 from spreading in the six directions of the X direction. Furthermore, since the groove 22 is curved, the divergence of X-rays in the X direction is also prevented. Thus, according to this apparatus, it is possible to obtain X-rays with small divergence in two directions. Also, electrodes 23.24
Since it is formed so as to cover only the bottom of the groove 22, the concentration of plasma on the bottom of the groove 22 can be strengthened, thereby making it possible to further reduce the divergence of the X-rays 27.

本発明者等の実験によれば、直方体21の上面から40
0’ (am)離れた位置でXM27の照射範囲を調べ
たところ、幅が10 (+nm)の円弧状の範囲であり
、発散性が極めて小さいことが確認された。さらに、従
来の衝撃型のものに比して十分大きな出力が得られるこ
とも確認された。
According to experiments by the inventors, 40 mm from the top surface of the rectangular parallelepiped 21
When the irradiation range of XM27 was examined at a position 0' (am) away, it was found to be an arc-shaped range with a width of 10 (+ nm), and it was confirmed that the divergence was extremely small. Furthermore, it was confirmed that a sufficiently large output could be obtained compared to conventional shock-type devices.

第4図は他の実施例を示す概略構成図である。FIG. 4 is a schematic configuration diagram showing another embodiment.

なお、第3図と同一部分には同一符号を付して、その詳
しい説明は省略する。この実施例が先に説明した実施例
と異なる点は、前記湾曲した溝22の代りに直線状の溝
28を設けたことである。また、第4図には示してい々
いが、先の実施例と同様に電極23,24、コンデンサ
25および高電圧電源26等が設けられている。
Note that the same parts as in FIG. 3 are given the same reference numerals, and detailed explanation thereof will be omitted. This embodiment differs from the previously described embodiments in that a straight groove 28 is provided in place of the curved groove 22. Further, although shown in FIG. 4, electrodes 23, 24, a capacitor 25, a high voltage power supply 26, etc. are provided as in the previous embodiment.

このような構成であれば、溝28から放射されるX線は
X方向にはあらゆる角度で大きな発散性を有するが、X
方向への発散性は防止される。つ1す、1方向へのX線
の発散を防止することができる。
With such a configuration, the X-rays emitted from the groove 28 have large divergence at all angles in the X direction;
Directional divergence is prevented. First, divergence of X-rays in one direction can be prevented.

なお、本発明は上述した各実施例に限定されるものでは
ない。例えば、前記溝22の底部22aをM5図に示す
如く他の部分よυ広く形成することによって、プラズマ
発生による溝22の内壁の消耗速度を小さくし長寿命化
をはかることもできる。さらに、溝の形状は湾曲溝22
や直線溝28に限るものではなく、第6図に示す如く波
状溝29、その他適宜変更することが可能である。また
、前記絶縁体はポリエチレンに限るものではなく、その
形状も直方体に限定されないのは勿論のことである。ま
た、前記コンデンサの容量や高電圧電源の電圧等は、仕
様に応じて適宜定めればよい。その他、本発明の要旨を
逸脱しない範囲で、種々変形して実施することができる
Note that the present invention is not limited to the embodiments described above. For example, by making the bottom portion 22a of the groove 22 wider than the other portions as shown in Fig. M5, the wear rate of the inner wall of the groove 22 due to plasma generation can be reduced and the service life can be extended. Furthermore, the shape of the groove is curved groove 22.
The grooves are not limited to the straight grooves 28, but may be wavy grooves 29 as shown in FIG. 6, or other suitable changes. Further, the insulator is not limited to polyethylene, and its shape is, of course, not limited to a rectangular parallelepiped. Further, the capacitance of the capacitor, the voltage of the high voltage power supply, etc. may be determined as appropriate according to the specifications. In addition, various modifications can be made without departing from the gist of the present invention.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はX線露光法の原理を示す模式図、第2図は従来
の放電プラズマX線源を示す概略構成図、第3図は本発
明の一実施例を示す概略構成図、第4図は他の実施例を
示す概略構成図、第5図および第6図はそれぞれ変形例
を示す概略構成図である。 21・・直方体(絶縁体)、22.28.29・・・溝
、23,24・・・電極、25・・・コンデンサ、26
・・・高電圧電源、27・・・X線。 出願人代理人 弁理士 鈴 江 武 彦9− 箪 1 図 第3図 第4図 塩5図 第6図
FIG. 1 is a schematic diagram showing the principle of the X-ray exposure method, FIG. 2 is a schematic diagram showing a conventional discharge plasma X-ray source, FIG. 3 is a schematic diagram showing an embodiment of the present invention, and FIG. The figure is a schematic configuration diagram showing another embodiment, and FIGS. 5 and 6 are schematic configuration diagrams showing modified examples, respectively. 21... Rectangular parallelepiped (insulator), 22.28.29... Groove, 23, 24... Electrode, 25... Capacitor, 26
...High voltage power supply, 27...X-ray. Applicant's agent Patent attorney Suzue Takehiko 9- Kan 1 Figure 3 Figure 4 Salt 5 Figure 6

Claims (4)

【特許請求の範囲】[Claims] (1)両生面を連通ずる溝が設けられた絶縁体と、この
絶縁体の両生面にそれぞれ被着された一対の電極と、こ
れらの電極間に接続されたコンデンサと、このコンデン
サを充電する高電圧電源とを具備してなることを特徴と
するX線発生装置。
(1) An insulator provided with a groove that communicates the amphibatic surfaces, a pair of electrodes each attached to the amphibatic surfaces of this insulator, a capacitor connected between these electrodes, and a device for charging this capacitor. An X-ray generator characterized by comprising a high voltage power source.
(2)前記溝は、湾曲するよう設けられたものであるこ
とを特徴とする特許請求の範囲第1項記載のX線発生装
置。
(2) The X-ray generator according to claim 1, wherein the groove is provided to be curved.
(3)前記溝は、その底部が他部より広く形成されたも
のであることを特徴とする特許請求の範囲第1項記載の
X線発生装置。
(3) The X-ray generator according to claim 1, wherein the groove has a bottom portion wider than other portions.
(4)前記電極は、前記溝の底部のみをグうように前記
絶縁体の両生面にそれぞれ被着されたものであることを
特徴とする特許請求の範囲第1項記載のX線発生装置。 1−
(4) The X-ray generator according to claim 1, wherein the electrodes are attached to both sides of the insulator so as to cover only the bottom of the groove. . 1-
JP57003709A 1982-01-13 1982-01-13 X-ray generating device Pending JPS58121599A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57003709A JPS58121599A (en) 1982-01-13 1982-01-13 X-ray generating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57003709A JPS58121599A (en) 1982-01-13 1982-01-13 X-ray generating device

Publications (1)

Publication Number Publication Date
JPS58121599A true JPS58121599A (en) 1983-07-19

Family

ID=11564863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57003709A Pending JPS58121599A (en) 1982-01-13 1982-01-13 X-ray generating device

Country Status (1)

Country Link
JP (1) JPS58121599A (en)

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