JPS58120778A - Vacuum vapor-depositing device - Google Patents

Vacuum vapor-depositing device

Info

Publication number
JPS58120778A
JPS58120778A JP383182A JP383182A JPS58120778A JP S58120778 A JPS58120778 A JP S58120778A JP 383182 A JP383182 A JP 383182A JP 383182 A JP383182 A JP 383182A JP S58120778 A JPS58120778 A JP S58120778A
Authority
JP
Japan
Prior art keywords
cooling
sample plate
sample
cooling body
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP383182A
Other languages
Japanese (ja)
Inventor
Yasuyuki Goto
康之 後藤
Nagaaki Etsuno
越野 長明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP383182A priority Critical patent/JPS58120778A/en
Publication of JPS58120778A publication Critical patent/JPS58120778A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/541Heating or cooling of the substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain a titled device which is capable of cooling without complicating a rotary mechanism, by constituting a cooling body for cooling a sample plate by tightly adhering to the rotatable sample plate, so that it can hold non- contact when the sample plate is rotated. CONSTITUTION:In a bell jar 1 of a vacuum vapor-depositing device, a vapor- depositing material 2 is heated and evaporated by a heater 3, and is scattered in the upper direction suitably from the opening part of a cover 5 of the source part by opening and closing a shutter 4. Samples 13, 13' are supported by a sample plate 11, are rotated by operation of a rotate-driving part 14 of the sample plate 11, and uniform vapor-deposition is performed. On the upper part of the sample plate 11, a cooling body 12 supported by a supporting mechanism 16 is provided, is constituted so that it adheres tightly and is separated freely to and from the sample plate 11 by an up-and-down driving part 15, the adherence surface of both of them has a plane of high accuracy, and in a state of adherence, sufficient thermal conductivity is obtained. Also, the cooling body is capable of receiving the feed and discharge of a cooling liquid such as cooling water, liquidized fleon, liquid nitrogen, etc. through a flexible conduit 19 from a lead-in port 17 and a discharge port 18 of the cooling liquid.

Description

【発明の詳細な説明】 ((転)発明の技術分野 木兄明娘被蒸着体を令却する手段を備えた真空蒸着@飯
に関する一〇である。
DETAILED DESCRIPTION OF THE INVENTION ((Trans)Technical Field of the Invention This is 10 relating to vacuum evaporation @ rice provided with a means for removing the object to be evaporated.

(b)  技術の背景 方面の工業分野で利用されている。(b) Technology background It is used in various industrial fields.

この真空蒸着に於いては、広い面積に蒸着すること、或
はむらなく蒸着すること郷を目的に被蒸着体支持鉄kを
回転させることがしばしば行われる。真空蒸着では被蒸
着体を試料、その支持装置を試料台と呼ぶことが多いの
で、以下本明細書に於いても試料、試料台という呼称を
使用する0蒸着時の試料温度によって形成される皮膜の
物理特性が変化することはよく知られておシ、半導体工
′業に於ては試料を加熱しながら蒸着することでは不十
分なので、加熱手段を設けて昇温せしめるのであるが、
一方、試料の耐熱性や、形成される皮膜の物理特性上の
要求から、試料を冷却することが8喪な場合もある0 例えばプラスチックの表面に*属族を被着するメタライ
ズ処理の場合、プラスチック材料は一般に熟による変形
、変質を生じ易いが、ソースからの熱輻射だけで許容温
度を越えることがあり、何らかの手段によって試料温度
を下けることが要求される。
In this vacuum evaporation, the support iron k for the object to be evaporated is often rotated for the purpose of evaporating over a wide area or uniformly evaporating. In vacuum evaporation, the object to be evaporated is often referred to as a sample, and its supporting device is often referred to as a sample stage. Therefore, in this specification, the names "sample" and "sample stage" will also be used. It is well known that the physical properties of the sample change, and in the semiconductor industry, it is not sufficient to evaporate the sample while heating it, so a heating means is provided to raise the temperature.
On the other hand, due to the heat resistance of the sample and the physical properties of the film formed, it may be necessary to cool the sample. Plastic materials are generally susceptible to deformation and deterioration due to ripening, but thermal radiation from the source alone may exceed the permissible temperature, so it is necessary to lower the sample temperature by some means.

また、金属蒸着膜は一般に多結晶であるが、低温表1f
IK被着することによって非晶質膜を形成する場合があ
ることが知られておシ、かかる目的の為にも試料冷却の
可能な蒸着装置が求められているC ヒ (c)  従来技術f問題点 試料台に回転機能と冷却機能を併せ持たせることは容易
ではない。通常行われるように試料台内部に冷却液を循
環させる方式では回転軸を利用して冷却液の導入、排出
が行われるが、構造が複雑になシ、高真空の達成が困難
となる。
In addition, metal vapor deposited films are generally polycrystalline, but low-temperature table 1f
It is known that an amorphous film may be formed by IK deposition, and a vapor deposition apparatus capable of cooling the sample is required for this purpose as well. Problem: It is not easy to provide a sample stage with both rotation and cooling functions. In the conventional method of circulating a cooling liquid inside the sample stage, a rotating shaft is used to introduce and discharge the cooling liquid, but the structure is complicated and it is difficult to achieve a high vacuum.

(d)  発明の目的 本発明は回転機構を複雑化することなく、冷却可能とし
た真空蒸着装置を提供するものである。。
(d) Object of the Invention The present invention provides a vacuum evaporation apparatus that can be cooled without complicating the rotation mechanism. .

(e)  発明の構成 本発明の真空蒸着装置は回転可能な試料台と、該試料台
に密着することKよって試料台を冷却する冷却体とを備
え、該冷却体は試料台回転時には試料台と非接触に保ち
得るように構成されている0(f)  発明の実施例 図面に本発明の実施例を示す0図に於て1はペルジャー
、2はソース材料、3はヒータ、4はシャッター、5は
ソース部のカバーである0ヒータ3に通電することによ
って加熱されたソース材料が蒸発し、カバー5の開口6
を通って上方に飛散し、試料台11に固着された試料1
3の表面に被着する。シャッター4は蒸着の開始、終了
を制御する為に設けられている。シリコンを蒸着する場
合、ソースシリコンfi、を子ビーム加熱が行われるが
、その場合も含めて、以上の構成要素は通常のものと同
様である。
(e) Structure of the Invention The vacuum evaporation apparatus of the present invention includes a rotatable sample stand and a cooling body that cools the sample stand by being in close contact with the sample stand, and the cooling body cools the sample stand when the sample stand is rotated. Embodiment of the Invention The embodiment of the invention is shown in the drawings. In the drawing, 1 is a Pelger, 2 is a source material, 3 is a heater, and 4 is a shutter. , 5 is a cover of the source part 0 When the heater 3 is energized, the heated source material evaporates, and the opening 6 of the cover 5 is heated.
Sample 1 was scattered upward through the
It adheres to the surface of 3. A shutter 4 is provided to control the start and end of vapor deposition. When silicon is vapor-deposited, the source silicon fi is subjected to sub-beam heating, but the above-mentioned components are the same as usual, including in that case.

試料台11の他の部分に固着された試料13′はって行
われる。
The sample 13' fixed to another part of the sample stage 11 is mounted.

試料台11の上方には冷却体重2が設けられている。該
冷却体は図では試料台11から離れた位置にあるが、上
下駆動部15を作動させることによって試料台11に密
着した状態にもなし得るよう構成されている。
A cooling weight 2 is provided above the sample stage 11. Although the cooling body is located at a position apart from the sample stage 11 in the figure, it is configured so that it can be placed in close contact with the sample stage 11 by operating the vertical drive unit 15.

互に接触する二つの面、即ち試料台の上面と冷却体の下
面とは密着するように高精度の平面性を有しており、密
着状態では十分な熱伝導性が得られるようになっている
The two surfaces that are in contact with each other, the top surface of the sample stage and the bottom surface of the cooling body, have highly precise flatness so that they are in close contact with each other, and when they are in close contact, sufficient thermal conductivity can be obtained. There is.

本発明の装置は次のように作動する。The device of the invention operates as follows.

オず、試料及びソースがセットされ、ペルジャーの排気
が行われるが、この時試料台11と冷却体12は密着状
1iK保たれる。
First, the sample and source are set and the Pelger is evacuated, but at this time the sample stage 11 and the cooling body 12 are kept in close contact with each other for 1iK.

導入口17から冷却液が注入され、冷却体内を流れるこ
とによって冷却体に密着した試料台(及び試料)を冷却
して排出口18から放出されるが、導入口、排出口と冷
却体の間は金属べ四−ズのような可撓性導管で接続され
ており、冷却体の上下移動に支障のないようKなってい
る。
A cooling liquid is injected from the inlet 17, flows through the cooling body, cools the sample stage (and sample) that is in close contact with the cooling body, and is discharged from the discharge port 18. are connected by a flexible conduit such as a metal base, and are designed so that the vertical movement of the cooling body will not be hindered.

冷却液としては冷水、液化フレオン、液体11索等、要
求される温度に応じて選択されたものが使用される。
As the cooling fluid, one selected depending on the required temperature, such as cold water, liquefied Freon, or liquid chlorine, is used.

蒸着開始前に冷却体12は試料台11がらの切離されて
上方に移行し、試料台のみを回転させながら蒸着が行わ
れる。試料台11は良好な熱伝導性をもつと共に大きな
熱容量をもつように作られているので、冷却体が切離さ
れ虎後もm度上昇はゆるやかで、必要な低温が維持され
る。
Before starting vapor deposition, the cooling body 12 is separated from the sample stage 11 and moved upward, and vapor deposition is performed while only the sample stage is rotated. Since the sample stage 11 is made to have good thermal conductivity and a large heat capacity, even after the cooling body is disconnected, the rise in degrees is gradual and the required low temperature is maintained.

冷却条件は目的により異るが、例えにアクリル板にアル
ミニウムを蒸着する場合、ソースからの輻射熱による昇
温を抑えることだけが資求されるが、蒸着時間が短い(
1分以内)ので、ソース温度が1000℃近い高温であ
って本、冷水を用いて蒸着前に一度冷却するだけで十分
目的を達することができる。
Cooling conditions vary depending on the purpose, but for example, when depositing aluminum on an acrylic plate, the only requirement is to suppress the temperature rise due to radiant heat from the source, but the deposition time is short (
(within 1 minute), the source temperature is close to 1000° C., and cooling once using cold water before deposition is sufficient to achieve the purpose.

比較的長時間の蒸着を必要とする場合は、蒸着工程を分
割し、冷却工程を間にはさむようにして実施すれば、試
料温度を許容値以下に保つことができる。
If a relatively long time vapor deposition is required, the sample temperature can be kept below an allowable value by dividing the vapor deposition process and performing the cooling process in between.

図面に於て16は冷却体支持機構を略式に表示したもの
であって、図示されていないガイド機構を有し、冷却体
の左右への偏移と傾斜の発住を抑えるように形成されて
いる。この部分け、機械工学技術分野で通常用いられる
技術が利用可能である0 (ロ)発明の効果 木兄F14は、試料かと冷却体とを切離し得る構造を採
っているので、回転機構のII[鹸化が避けられており
、しかも8賛とされる低温を維持することができる。
In the drawings, reference numeral 16 schematically represents a cooling body support mechanism, which has a guide mechanism (not shown) and is formed to prevent the cooling body from shifting to the left or right and from inclining. There is. For this part, techniques commonly used in the field of mechanical engineering can be used. (b) Effects of the invention Since the Kinai F14 has a structure that allows the sample and the cooling body to be separated, the rotating mechanism II [ Saponification is avoided, and the low temperature that is said to be 8 points can be maintained.

【図面の簡単な説明】[Brief explanation of drawings]

1簡に本発明を示すものであって、図に於て1はペルジ
ャー、2Fi蒸着材料、3はと−タ、4はシャッター、
5はソース部のカバー、6は開口部。 11は試料台、12は冷却体、13.13’は試料、1
4は試料台のig1転駆動部、15は冷却体の上下駆動
部、16は冷却体支持機構、17,181は冷却液の導
入口及び排出口、19は可撓性導管である0・陛気
1 shows the present invention briefly, and in the figure, 1 is a Pelger, 2 is a Fi vapor deposition material, 3 is a heater, 4 is a shutter,
5 is a cover for the source section, and 6 is an opening. 11 is a sample stage, 12 is a cooling body, 13.13' is a sample, 1
4 is the ig1 rotation drive part of the sample stage, 15 is the vertical drive part of the cooling body, 16 is the cooling body support mechanism, 17 and 181 are the cooling liquid inlet and outlet, and 19 is a flexible conduit. air

Claims (1)

【特許請求の範囲】[Claims] 回転可能に構成された被蒸着体支持装置と、皺支持装置
に接触して熟的Km続されると共に、非接触の状態にも
なし得る如く構成された令却装置とを備えることを特徴
とする真空蒸着装置。
It is characterized by comprising a device for supporting the deposition target which is configured to be rotatable, and a control device which is configured to be in contact with the wrinkle support device and to be connected to it, but also to be in a non-contact state. vacuum evaporation equipment.
JP383182A 1982-01-13 1982-01-13 Vacuum vapor-depositing device Pending JPS58120778A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP383182A JPS58120778A (en) 1982-01-13 1982-01-13 Vacuum vapor-depositing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP383182A JPS58120778A (en) 1982-01-13 1982-01-13 Vacuum vapor-depositing device

Publications (1)

Publication Number Publication Date
JPS58120778A true JPS58120778A (en) 1983-07-18

Family

ID=11568138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP383182A Pending JPS58120778A (en) 1982-01-13 1982-01-13 Vacuum vapor-depositing device

Country Status (1)

Country Link
JP (1) JPS58120778A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6417863A (en) * 1987-07-14 1989-01-20 Nippon Steel Corp Work-cooling device for ion implantation equipment
CN116145099A (en) * 2023-04-21 2023-05-23 合肥铠柏科技有限公司 Straight liquid nitrogen cooling sample holder

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6417863A (en) * 1987-07-14 1989-01-20 Nippon Steel Corp Work-cooling device for ion implantation equipment
JPH0434624B2 (en) * 1987-07-14 1992-06-08 Shinnippon Seitetsu Kk
CN116145099A (en) * 2023-04-21 2023-05-23 合肥铠柏科技有限公司 Straight liquid nitrogen cooling sample holder

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