JPS58117889A - Electroplating method - Google Patents
Electroplating methodInfo
- Publication number
- JPS58117889A JPS58117889A JP118682A JP118682A JPS58117889A JP S58117889 A JPS58117889 A JP S58117889A JP 118682 A JP118682 A JP 118682A JP 118682 A JP118682 A JP 118682A JP S58117889 A JPS58117889 A JP S58117889A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- base material
- voltage
- soln
- positive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【発明の詳細な説明】
生ずるVt換めつき全防止し、密着性の良好なめっき層
を得る方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for completely preventing Vt displacement and obtaining a plating layer with good adhesion.
電気めっき方法において、めっき層とめっき基41(以
下、基材と略称す)との密着性を著しく低ドさせる原因
の一つがt換めっきの存在にあることは周知の事実であ
る。この置換めっきの存在は、時としてめっき直後でめ
っき層と基材の密着性が十すな場合でも、めっき後の実
用工程中に大気中での加熱工程を有する場合には、密着
性の低下として顕著に表われることがある。In the electroplating method, it is a well-known fact that one of the causes of significantly lowering the adhesion between the plating layer and the plating base 41 (hereinafter referred to as the base material) is the presence of t-transfer plating. The existence of this displacement plating means that even if the adhesion between the plating layer and the base material is sometimes insufficient immediately after plating, if there is a heating process in the atmosphere during the practical process after plating, the adhesion may deteriorate. It may appear conspicuously.
例えば鉄ニツケル合金基材上への銀めっきの場合、めっ
、き層と基材の間に、加熱中においても相互拡散が殆ん
ど存在せず、置換めっきが存在する場合は、結果的に大
記中の加熱により、めっき層と基材の間でふくれ、社が
れが生じ、良好な密着性は得られない。For example, in the case of silver plating on an iron-nickel alloy substrate, there is almost no mutual diffusion between the plating layer and the substrate even during heating, and if displacement plating is present, the resulting Due to the heating mentioned above, blistering and peeling occur between the plating layer and the base material, making it impossible to obtain good adhesion.
このような密着性の低下を防止する方法として、例えば
連続めっきで従来から行なわれている方法としては、基
材がめつき浴に接触する前に予め所定の電流を印加し、
しかる後めっき浴中に入れるか、又はめっき浴を流し込
み、置換めっきを防止するか、或いはめっき工程に入る
前に、1−め基材表面にキレート皮膜等の電着性のない
皮膜を形成せしめ、めっき浴又は電気エネルギーを用い
て、そのキレート皮膜を破った後めっきする、いわゆる
ブレディップ等が用いられている。As a method to prevent such a decrease in adhesion, for example, a conventional method used in continuous plating is to apply a predetermined current in advance to the base material before it comes into contact with the plating bath.
After that, either put it in a plating bath or pour a plating bath to prevent displacement plating, or form a non-electrodepositable film such as a chelate film on the surface of the first substrate before starting the plating process. A so-called bre-dip method is used in which the chelate film is broken using a plating bath or electric energy and then plated.
しかし前者の方法の場合、特にジェット流にょる間歇作
動のめっきの場合、通液初期には、エヤーの巻き込み、
浴温のばらつきが存在し、又めっき部分内において基材
とめっき液の衝突のタイミングのずれが生じ、結果とし
てめっき初期において電流密度分布が不均一になる等、
品質上必ずしも好ましいめっき方法にはならないという
欠点がある。However, in the case of the former method, especially in the case of intermittent plating using a jet flow, air entrainment,
There are variations in bath temperature, and there is also a lag in the timing of collision between the substrate and the plating solution within the plating area, resulting in uneven current density distribution in the early stage of plating, etc.
It has the disadvantage that it is not necessarily a preferable plating method in terms of quality.
又後者の場合には、ブレディップによるキレート皮膜が
めつき浴中に混入し、めっき質の純度を低下させる原因
となると共に、ひいては不純物の影響による密着性の低
下の原因よなることが考えられる。さらに製造上の管理
ポイントが多くなり、作業性を低下させるという欠点を
有している。In the latter case, the chelate film formed by the bleed dip may be mixed into the plating bath, causing a decrease in the purity of the plating quality, and may also be the cause of a decrease in adhesion due to the influence of impurities. Furthermore, there is a disadvantage that there are many control points during manufacturing, which reduces workability.
本発明は、上述の問題点を解決するため成されたもので
、簡単な方法で電気めっきの初期の置換めっきを有効に
防止し、作業性を低下させることなく、又めっき浴を汚
染することなく、密着性の良好なめっきを得ることがで
きる電気めっき方法ヶ提供せんとするものである。The present invention was made to solve the above-mentioned problems, and effectively prevents displacement plating in the initial stage of electroplating using a simple method, without reducing work efficiency, and without contaminating the plating bath. Therefore, it is an object of the present invention to provide an electroplating method capable of obtaining plating with good adhesion.
本発明は、めっき液接触前からめっき基材にこれを正と
する微小電圧を印加した状態で該めっき基材をめっき液
に接触させた後、めっき電流を印加することにより、初
期置換めっきを防止することを特徴とする電気めっき方
法である。The present invention performs initial displacement plating by applying a plating current to the plating substrate after contacting the plating substrate with a positive microvoltage applied to the plating substrate before contacting the plating solution. This is an electroplating method characterized by preventing.
本発明方法を適用する電気めっきは、めっきの初期段階
で置換めっきを生ずる恐れのあるめっき基材、めっき金
属およびめっき浴の組合せの場合である。Electroplating to which the method of the present invention is applied is for combinations of plating substrate, plating metal, and plating bath that may cause displacement plating in the early stages of plating.
本発明において、めっき液接触前から基材に印加する微
小電圧は、基材がめつき液に接触しても溶出しない範囲
での正の電圧である。良好な密着性を得るに必要な電圧
は、めっき液が接触しても電流が流れず、しかも基材が
溶出しない範囲の平衡電圧以下の、基材を正とする電圧
(めっき時の電圧と逆)であり、余り低いと置換めっき
を生じ、密着性を害する恐れがある。In the present invention, the microvoltage applied to the base material before contact with the plating solution is a positive voltage within a range that does not cause elution even when the base material comes into contact with the plating solution. The voltage required to obtain good adhesion is a voltage with the substrate as positive (compared to the voltage during plating), which is below the equilibrium voltage within the range where no current flows even when the plating solution comes into contact with it, and where the substrate does not elute. (opposite), and if it is too low, displacement plating may occur and the adhesion may be impaired.
このような電圧を印加した状態で、基材をめっき液に接
触させるためVClめっき液を流し初めたり、めっき液
に浸漬したりし、次いで初期のエヤー巻き込み、浴温の
ばらつき等が無くなり、安定な液状態になったところで
、めっき電流を印加する。かようにすると基材は前処理
後の清浄で活性な表面を維持したまま電気めっきされる
ので、めっき層と基材の密着性の良好なめっきが得られ
る。With this kind of voltage applied, the VCl plating solution is started to flow or immersed in the plating solution to bring the substrate into contact with the plating solution, and then the initial air entrainment and variations in bath temperature are eliminated and the substrate is stabilized. When the liquid state is reached, a plating current is applied. In this way, the substrate is electroplated while maintaining its clean and active surface after pretreatment, so that a plating with good adhesion between the plating layer and the substrate can be obtained.
実施例
42重量%のニッケルを含有する厚さ025101゜W
25 zmのフープ状の鉄ニツケル合金条を連続的に
脱脂処理および塩酸水溶液による酸洗処理し、表向を清
浄にした後、連続電気めっき装置によシ銀めっきを行な
った。Example 4 Thickness 025101°W containing 2% by weight of nickel
A 25 zm hoop-shaped iron-nickel alloy strip was continuously degreased and pickled with an aqueous hydrochloric acid solution to clean the surface, and then silver plated using a continuous electroplating device.
めっき液として下記の条件の液を用いた。A plating solution under the following conditions was used.
ストライクめっき液接触前から予め基材に平衡電圧以下
である、基板を正とする電圧0.05Vを印加しながら
通液し、図に示す様に通液2秒後に陰極電流密度5A/
d♂で5秒間ストライクめっきを施した後、更に本めっ
き浴を用いて陰極電流密度比較のため、上述のストライ
クめっき液接触前からの電圧0.(j5 Vを印加せず
に、上述と同じ履歴のめっき電流を印加して、比較例の
厚さ2.5μmの銀めっき層を得た。Before contacting the strike plating solution, a voltage of 0.05 V with the substrate as positive, which is below the equilibrium voltage, is applied to the substrate while the solution is passed through the solution, and as shown in the figure, after 2 seconds of passing the solution, the cathode current density is 5A/
After strike plating was performed for 5 seconds with d♂, the present plating bath was further used to compare the cathode current density, and the voltage from before contact with the above strike plating solution was 0. (j5 Without applying V, a plating current with the same history as described above was applied to obtain a 2.5 μm thick silver plating layer as a comparative example.
得られた2mの銀めっき条について、500℃で5分間
大気中で加熱後、直径30μmの金線にて熱圧着ボンデ
ィングした後、引張試験を行なった。The resulting 2 m long silver-plated strip was heated in the air at 500° C. for 5 minutes, thermocompression bonded with a gold wire having a diameter of 30 μm, and then subjected to a tensile test.
その結果、本発明によるものは、伺等異常が認められな
かった。これに対し比較例は、鉄ニツケル合金表面と銀
めっき層の界面ではくりが見られた。As a result, no abnormality was observed in the product according to the present invention. On the other hand, in the comparative example, cracks were observed at the interface between the iron-nickel alloy surface and the silver plating layer.
実施例より、本発明方法により鉄ニツケル合金上に密着
性の良好なる銀めっき層を簡便に得ることができ、特に
めっき層の薄膜化の場合に有効であることが分った。From the examples, it was found that a silver plating layer with good adhesion can be easily obtained on an iron-nickel alloy by the method of the present invention, and that it is particularly effective in reducing the thickness of the plating layer.
上述の実施例では連続電気めっきの場合について述べた
が、本発明方法はバッチ式の電気めっきの場合について
も同様に適用し得、又鉄ニソケルイY金上の銀電気めっ
きに限られるものではなく、め1つき時に初期置換めっ
きを生ずる恐れのあるすべての金属の組合せに対して適
用し得るものである。1
以」−述べたように、本発明の電気めっき方法は、めっ
き液接触前からめっき基材にこれを正とする微小電圧を
印加した状態で該めっき基材をめっき液に接触させた後
、めっき電流を印加するため、微小電圧印加状態で基材
をめっき液に接触させても、基材が溶出することなく、
清浄で活性な表面を維持し、次いで初期のエヤー巻き込
み、浴温のばらつき等が無くなり、安定な液状態になっ
たところでめっきが開始されるので、初期の置換めっき
を防止し、密着性の良好なめっきが得られると共に、む
らのない均一な品質のめっきが得られるを印加するたけ
であるので、設備が簡単で、かつ11業が簡便である利
点がある。Although the above embodiments have been described in the case of continuous electroplating, the method of the present invention can be similarly applied to the case of batch-type electroplating, and is not limited to silver electroplating on iron, nickel, and gold. This method can be applied to all combinations of metals that may cause initial displacement plating during plating. 1 - As described above, the electroplating method of the present invention involves applying a microvoltage that is positive to the plating substrate before contacting the plating solution, and then after bringing the plating substrate into contact with the plating solution. Because a plating current is applied, the base material will not elute even if the base material is brought into contact with the plating solution while a microvoltage is applied.
A clean and active surface is maintained, and plating is started when the initial air entrainment, bath temperature variations, etc. are eliminated and a stable liquid state is reached, thus preventing initial displacement plating and ensuring good adhesion. It is possible to obtain a smooth plating and to obtain a plating of a uniform quality without unevenness.As only the application of the voltage is required, there is an advantage that the equipment is simple and the 11th step is simple.
図は本発明方法の実施例におけるめっき電流の印加履歴
の例を示す図である。The figure is a diagram showing an example of the application history of plating current in an embodiment of the method of the present invention.
Claims (2)
する微小電圧を印加した状態で該めっき基材をめっき液
に接触させた後、めっき電流を印加することによシ、初
期置換めっきを防止することを特徴とする電気めっき方
法。(1) Initial displacement plating is performed by applying a plating current to the plating base material after contacting the plating base material with a positive microvoltage applied to the plating base material before contact with the plating solution. An electroplating method characterized by preventing.
囲第1項記載の電気めっき方法。(2) The electroplating method according to claim 1, wherein the microvoltage is equal to or lower than the equilibrium voltage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP118682A JPS58117889A (en) | 1982-01-06 | 1982-01-06 | Electroplating method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP118682A JPS58117889A (en) | 1982-01-06 | 1982-01-06 | Electroplating method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58117889A true JPS58117889A (en) | 1983-07-13 |
Family
ID=11494415
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP118682A Pending JPS58117889A (en) | 1982-01-06 | 1982-01-06 | Electroplating method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58117889A (en) |
-
1982
- 1982-01-06 JP JP118682A patent/JPS58117889A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3147547A (en) | Coating refractory metals | |
JP2975246B2 (en) | Sn-plated wire for electrical contact and method of manufacturing the same | |
US4883774A (en) | Silver flashing process on semiconductor leadframes | |
JP2000077594A (en) | Lead frame for semiconductor device | |
JPH0253945B2 (en) | ||
JPH06235086A (en) | Lead steel wire for electronic parts and its production | |
JPS58117889A (en) | Electroplating method | |
US3770594A (en) | Plating metal onto small flexibly based conductors | |
US2195231A (en) | Art of coating metals | |
JPS60258492A (en) | Manufacture of tin plated wire | |
US3105294A (en) | Beryllium brazing | |
JP3402228B2 (en) | Semiconductor device having lead-free tin-based solder coating | |
JPS59231844A (en) | Lead frame for semiconductor device | |
JPS627280B2 (en) | ||
JPS6218744A (en) | Lead frame | |
JP2685936B2 (en) | Manufacturing method of composite material | |
JPS6326375A (en) | Method for starting electroless plating | |
JPH04346700A (en) | Electrolytic peeling method for plating film | |
JPS63168043A (en) | Lead frame | |
JPS6142941A (en) | Lead frame for semiconductor | |
JPH02281749A (en) | Manufacture of lead frame | |
JPH07300696A (en) | Electrodeposition tin plating method | |
JPS6153434B2 (en) | ||
JPH01208493A (en) | Production of contact maker | |
JPS6118138A (en) | Wire bonding method |