JPS5811710B2 - シユウセキカイロガタキオクソウチ - Google Patents
シユウセキカイロガタキオクソウチInfo
- Publication number
- JPS5811710B2 JPS5811710B2 JP50014813A JP1481375A JPS5811710B2 JP S5811710 B2 JPS5811710 B2 JP S5811710B2 JP 50014813 A JP50014813 A JP 50014813A JP 1481375 A JP1481375 A JP 1481375A JP S5811710 B2 JPS5811710 B2 JP S5811710B2
- Authority
- JP
- Japan
- Prior art keywords
- storage
- address
- array
- data
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003860 storage Methods 0.000 claims description 214
- 238000012546 transfer Methods 0.000 claims description 49
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 17
- 230000004044 response Effects 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 claims 1
- 238000003491 array Methods 0.000 description 91
- 238000012545 processing Methods 0.000 description 35
- 235000012431 wafers Nutrition 0.000 description 35
- 230000003936 working memory Effects 0.000 description 22
- 238000010586 diagram Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 21
- 238000000429 assembly Methods 0.000 description 20
- 230000000712 assembly Effects 0.000 description 20
- 238000002955 isolation Methods 0.000 description 19
- 230000015654 memory Effects 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 12
- 230000008520 organization Effects 0.000 description 11
- 238000012360 testing method Methods 0.000 description 11
- 230000002950 deficient Effects 0.000 description 9
- 230000004913 activation Effects 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000000523 sample Substances 0.000 description 8
- 238000007726 management method Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000007667 floating Methods 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000007480 spreading Effects 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000001934 delay Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000003134 recirculating effect Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 210000000352 storage cell Anatomy 0.000 description 2
- PYNHPJZBYGNOPU-ONTZPWRJSA-N C1=CC(N(CCO[Si](C)(C)C(C)(C)C)CCO[Si](C)(C)C(C)(C)C)=CC=C1\C=C\C(CC(C)(C)C/1)=C\C\1=C\C=C\C1=C(C#N)C(=C(C#N)C#N)OC1(C)C Chemical compound C1=CC(N(CCO[Si](C)(C)C(C)(C)C)CCO[Si](C)(C)C(C)(C)C)=CC=C1\C=C\C(CC(C)(C)C/1)=C\C\1=C\C=C\C1=C(C#N)C(=C(C#N)C#N)OC1(C)C PYNHPJZBYGNOPU-ONTZPWRJSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000008521 reorganization Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
- G11C29/832—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption with disconnection of faulty elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Static Random-Access Memory (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US439677A US3900837A (en) | 1974-02-04 | 1974-02-04 | Variably addressable semiconductor mass memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS50110746A JPS50110746A (US06262066-20010717-C00424.png) | 1975-09-01 |
JPS5811710B2 true JPS5811710B2 (ja) | 1983-03-04 |
Family
ID=23745691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50014813A Expired JPS5811710B2 (ja) | 1974-02-04 | 1975-02-04 | シユウセキカイロガタキオクソウチ |
Country Status (2)
Country | Link |
---|---|
US (1) | US3900837A (US06262066-20010717-C00424.png) |
JP (1) | JPS5811710B2 (US06262066-20010717-C00424.png) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4038648A (en) * | 1974-06-03 | 1977-07-26 | Chesley Gilman D | Self-configurable circuit structure for achieving wafer scale integration |
US4194130A (en) * | 1977-11-21 | 1980-03-18 | Motorola, Inc. | Digital predecoding system |
GB2082354B (en) * | 1980-08-21 | 1984-04-11 | Burroughs Corp | Improvements in or relating to wafer-scale integrated circuits |
US4419746A (en) * | 1980-10-14 | 1983-12-06 | Texas Instruments Incorporated | Multiple pointer memory system |
US4601019B1 (en) * | 1983-08-31 | 1997-09-30 | Texas Instruments Inc | Memory with redundancy |
IL96808A (en) * | 1990-04-18 | 1996-03-31 | Rambus Inc | Introductory / Origin Circuit Agreed Using High-Performance Brokerage |
US5574688A (en) * | 1995-05-10 | 1996-11-12 | Sgs-Thomson Microelectronics, Inc. | Apparatus and method for mapping a redundant memory column to a defective memory column |
DE10008578A1 (de) * | 2000-02-24 | 2001-09-06 | Infineon Technologies Ag | Redundanz-Multiplexer für Halbleiterspeicheranordnung |
US6643736B1 (en) * | 2000-08-29 | 2003-11-04 | Arm Limited | Scratch pad memories |
US7085658B2 (en) * | 2004-10-20 | 2006-08-01 | International Business Machines Corporation | Method and apparatus for rapid inline measurement of parameter spreads and defects in integrated circuit chips |
JP6210187B2 (ja) * | 2012-10-23 | 2017-10-11 | セイコーエプソン株式会社 | 集積回路装置、物理量測定装置、電子機器および移動体 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3798617A (en) * | 1970-11-04 | 1974-03-19 | Gen Instrument Corp | Permanent storage memory and means for addressing |
US3781826A (en) * | 1971-11-15 | 1973-12-25 | Ibm | Monolithic memory utilizing defective storage cells |
US3800294A (en) * | 1973-06-13 | 1974-03-26 | Ibm | System for improving the reliability of systems using dirty memories |
-
1974
- 1974-02-04 US US439677A patent/US3900837A/en not_active Expired - Lifetime
-
1975
- 1975-02-04 JP JP50014813A patent/JPS5811710B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS50110746A (US06262066-20010717-C00424.png) | 1975-09-01 |
US3900837A (en) | 1975-08-19 |
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