JPS58115094A - Synthesis of artificial beryl single crystal - Google Patents

Synthesis of artificial beryl single crystal

Info

Publication number
JPS58115094A
JPS58115094A JP21047281A JP21047281A JPS58115094A JP S58115094 A JPS58115094 A JP S58115094A JP 21047281 A JP21047281 A JP 21047281A JP 21047281 A JP21047281 A JP 21047281A JP S58115094 A JPS58115094 A JP S58115094A
Authority
JP
Japan
Prior art keywords
beryl
molten salt
flux
single crystal
artificial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21047281A
Other languages
Japanese (ja)
Inventor
Koji Kasuga
春日 好治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Matsushima Kogyo KK
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Matsushima Kogyo KK
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushima Kogyo KK, Seiko Epson Corp, Suwa Seikosha KK filed Critical Matsushima Kogyo KK
Priority to JP21047281A priority Critical patent/JPS58115094A/en
Publication of JPS58115094A publication Critical patent/JPS58115094A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00Single-crystal growth from melt solutions using molten solvents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Adornments (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To prepare a high-quality single crystal free from inclusion, in high efficiency, in the titled synthesis using a molten salt, by purifying the flux and/ or the raw materials with heat-treatment. CONSTITUTION:Flux of flux and a raw material of beryl are heated at about 1,000-1,400 deg.C for about 15hr, and quenched to about 500-650 deg.C. The impurity which is a main cause of inclusion can be removed by this treatment. The molten salt (flux) quenched to the specified temperature is transferred to another crucible containing the raw material of beryl, heated at a specific temperature, and charged with a seed crystal to effect the growth of beryl. A high-quality beryl single crystal can be prepared by this process.

Description

【発明の詳細な説明】 本発明は浴剤(フラックス)を用いた人工ベリル単結晶
の合成方法に関し、溶融塩法により良質なベリル単結晶
を効率よくかつ経済的に合成する方法に関するものであ
る。
[Detailed Description of the Invention] The present invention relates to a method for synthesizing artificial beryl single crystals using a bath agent (flux), and relates to a method for efficiently and economically synthesizing high-quality beryl single crystals by a molten salt method. .

これまでの人工ベリルの合成方法としては水熱法、溶剤
を用いた溶融塩法が知られているが、本発明は溶融塩法
の改良に関するものである。
Hydrothermal methods and molten salt methods using solvents have been known as conventional methods for synthesizing artificial beryl, but the present invention relates to improvements in the molten salt methods.

溶融塩法は水熱法に比べて、使用エネルギー、育成時間
が短く、また比較的簡単な装置であると云う点で着しく
経済的であると言える。すなわち溶融塩法はほぼベリル
組成比を示す酸化ベリラム酸化アルミニウム、二酸化ケ
イ素及び必要に応じて酸化クロム等の着色剤よりなる原
料物質に浴剤として、モリブデン酸塩、5酸化バナジン
、タングステン酸塩等の溶剤から選ばれた一種もしくは
2棟以上を加え、これを上記溶剤の溶融温度以上に加熱
して浴融塩を形成してこの浴融塩を一定温度に長時間維
持するかあるいは一定の勾配をもって冷却するかして浴
融塩中に人工ベリルの生成又は育成する方法である。こ
のような溶融塩法は通常700℃〜1400℃範囲内で
の加熱保持ですむので装置が簡単であシ、複雑な構造の
オートクレープを使用し高温高圧下で生成育成する水熱
法に比べ、合成上有利である。しかしこの溶融塩法にお
いても次の問題がある。
The molten salt method can be said to be considerably more economical than the hydrothermal method in that it requires less energy and growth time, and uses relatively simple equipment. That is, in the molten salt method, a bath agent such as molybdate, vanadium pentoxide, tungstate, etc. is added to a raw material consisting of berylum oxide aluminum oxide, silicon dioxide, and, if necessary, a coloring agent such as chromium oxide, which has a beryl composition ratio. Add one or more solvents selected from the above solvents, heat this to a temperature higher than the melting temperature of the above solvent to form a bath molten salt, and maintain this bath molten salt at a constant temperature for a long time or at a constant gradient. This is a method of producing or growing artificial beryl in a molten salt bath by cooling it with water. This type of molten salt method usually only requires heating and holding within the range of 700°C to 1400°C, so the equipment is simple, compared to the hydrothermal method, which uses a complicated autoclave and grows under high temperature and high pressure. , which is synthetically advantageous. However, this molten salt method also has the following problems.

一面のバッチ内に仕込んだ原料物質の使用量に対する純
度の高い商品となる4リル生成量が少ない。すなわち従
来方法によると種子結晶の周囲に生成育成するベリルは
インクルージヨンが発生し易く高品位ベリル単結晶を得
るのが難しい。
The amount of 4 rill produced, which results in a product with high purity, is small relative to the amount of raw material used in one batch. That is, according to the conventional method, inclusions are likely to occur in the beryl generated and grown around the seed crystal, making it difficult to obtain a high-quality beryl single crystal.

本発明はこの問題につきインクルージヨンの主要因であ
る不純物加熱及び冷却による熱処理によ゛プ除却し解決
したものである。
The present invention solves this problem by removing impurities, which are the main cause of inclusions, through heat treatment by heating and cooling.

本発明は溶融塩(7シツクス)6不純、物を除却するこ
とによプインクルージョンを除却することに着目し、溶
融塩にベリル組成シフラックス単体またはフラックスと
原料を1000℃〜1400[ニ加熱し15 H保持し
7を稜500℃〜650cまで急冷する。所定温度とな
った、溶融塩を原料を含んだ他のルツボ°にあける。#
!i塩及び原料を入れたルツボを生成育成温度800 
、’E〜1200℃壕で再加熱した後、保持する。その
後種子結晶を晶を得る方法である。その実施例を次に上
げる。
The present invention focuses on removing inclusions by removing six impurities and substances in molten salt (7 sixes), and heats the molten salt to 1000°C to 1400°C by adding beryl composition siflux alone or flux and raw materials. Hold for 15 hours and rapidly cool 7 to 500°C to 650°C. The molten salt, which has reached a predetermined temperature, is poured into another crucible containing raw materials. #
! i Create a crucible containing salt and raw materials and grow at a temperature of 800.
, 'E ~ 1200 ° C. After reheating in a trench, it is held. After that, the seed crystals are obtained. An example of this is given below.

実施例1 ■ 図面対応力−ブム ■ 原料物質、溶剤ならびKその配合 天然ベリル粉末  Hl f LSmMo’n      55F M、o虐               559Crm
Os       0.1F ■ 溶融塩形成の温度原料 白金ルツボ内に■材料を充填し1400’CKて15時
間保持 ■ 冷却 加熱保持後500℃まで室温中にて急冷■ 豊加熱 1時間で900℃に再加熱 ■ 再加熱後の処理 900℃に至った2時間後種子結晶を添加し仁の状態で
1ケ月間放置した ■ 結果及び所見 エメラルド単結晶収率 5〜7チ インクルージヨンがほとんど見当たらない。
Example 1 ■ Ability to correspond to drawings - Bum■ Raw materials, solvents, and K blended natural beryl powder Hl f LSmMo'n 55F M, o 559Crm
Os 0.1F ■ Temperature for forming molten salt ■ Fill material into platinum crucible and hold at 1400'CK for 15 hours ■ Cool and heat and hold, then rapidly cool to 500℃ at room temperature ■ Heat again to 900℃ for 1 hour Heating ■ Treatment after reheating 2 hours after the temperature reached 900°C, seed crystals were added and left in the kernel state for one month ■ Results and observations Yield of emerald single crystals Almost no 5- to 7-inch inclusions were found.

実施例2 ■ 図面対応力−プム ■ 実施例1の■に同じ ■ 溶融塩形成の温度条件 白金ルツボ内Kl融塩の゛みを充填し’、400℃にて
15時間保持 ■ 実施例1の■に同じ ■ 実施例1の■に同じ ■ 7ラツクスの原料ルツボへの投入 7シツクスを900℃に加熱径、原料を充填したルツボ
にフラックスを投入する フラックスを投入したルツボは炉内温度900℃中放置
する。
Example 2 ■ Ability to correspond to drawings - Pum ■ Same as ■ of Example 1 ■ Temperature conditions for forming molten salt Fill a platinum crucible with Kl molten salt and hold at 400°C for 15 hours ■ Same as ■■ Same as ■ of Example 1■ Injecting 7 lacs into the crucible Heating the 7 lacs to 900℃, pouring the flux into the crucible filled with raw materials.The crucible with the flux added has a furnace temperature of 900℃. Leave it inside.

■ 種子結晶の投入 5時間彼櫨子結晶を投入L2、−夕月間900t:で放
置する。
■ Insertion of seed crystals: 5 hours Insertion of cypress crystals L2 - 900 tons in the evening: Leave for 5 hours.

■ 結果及び所見 エメラルド収率  3〜5チ インクルージヨンはほとんど見られない。■ Results and findings Emerald yield: 3-5 chi Inclusions are almost never seen.

実施例3 ■ 図面対応カーブB ■ 実施例1の■に同じ ■ 溶融塩形成の温度条件 白金ルツボ内に■材料を充填し100OCにて15時間
保持 ■ 冷却 加熱保持後650℃まで室温中にて急冷■ 再加熱 1時間で900℃に再加熱 ■ 再加熱後の処理 900℃に至った2時間種子結晶を添加しこの状態で1
ケ月間放置した。
Example 3 ■ Curve B corresponding to the drawing ■ Same as ■ in Example 1 ■ Temperature conditions for forming molten salt ■ Fill material into a platinum crucible and hold at 100 OC for 15 hours ■ After cooling and heating, hold at room temperature to 650 °C Rapid cooling ■ Reheating to 900℃ for 1 hour ■ Treatment after reheating 2 hours after reaching 900℃ Add seed crystals and in this state
I left it for a month.

■ 結果及び所見 エメラルド単結晶収率 3〜7% インクルージヨンはほとんど見られない。■ Results and findings Emerald single crystal yield 3-7% Inclusions are almost never seen.

以上の実施例よシ本発明によシ人工単結晶の問題点であ
るインクルージヨンが解決されたことによシ、従来法に
比し、高品質、高歩留シが得られる。
In the above-described embodiments, the present invention solves the problem of inclusions in artificial single crystals, so that higher quality and higher yield can be obtained than in the conventional method.

なお例示の実施例は原料物質とし高品質の天然ベリル粉
末を用いたが、これに代って高純間の酸化ペリラム、酸
化アルミニウム、酸化ケイ素を使用しても同じ結果が得
られる。
Although high-quality natural beryl powder was used as the raw material in the illustrated embodiment, the same results could be obtained by using high-purity perylum oxide, aluminum oxide, or silicon oxide instead.

以上の説明ならびに実施例よシ、本発明によれば従来の
溶融塩法による人工ベリル単結晶の合成法に簡単な熱操
作を加味することにより従来の溶融塩法の有する本質的
利益を留保した上で、品質の向上ならびに歩留シ向上に
寄与してコストダウンを計れるので本発明は人工ベリル
単結晶の合成法として極めて有意義である。
According to the above explanation and examples, according to the present invention, the essential benefits of the conventional molten salt method are retained by adding a simple thermal operation to the conventional molten salt method for synthesizing artificial beryl single crystals. In addition, the present invention is extremely meaningful as a method for synthesizing artificial beryl single crystals, since it contributes to improved quality and yield and reduces costs.

【図面の簡単な説明】[Brief explanation of drawings]

第1図・は本発明の実施例に基づく、浴融塩の温度一時
間特性を表わしたものである。 以   上 出願人 松島工業株式会社 株式会社内訪精工舎 代理人 弁理士最 上  務 笑1図
FIG. 1 shows the temperature-hour characteristic of a bath molten salt based on an example of the present invention. Applicant Matsushima Kogyo Co., Ltd. Naiwa Seikosha Co., Ltd. Agent Tsutomu Mogami, Patent Attorney Figure 1

Claims (1)

【特許請求の範囲】[Claims] はぼベリルの組成比を示す酸化ぺIJ リウム酸イヒア
ルミニュウム、二酸化ケイ素及び酸イヒクロム等の着色
剤を加えてなる原料物質に、浴斎j(フラックス)とし
ての五酸化ノくナジン、モ1ノプデン酸、タングステン
酸よシ選ばれた1種又は2種以上を加え、上記浴剤の溶
融温度以上にカロ熱して浴融塩を形成して人工ベリル単
結晶を合成又は育成する方法において、フラックス単体
又はスラックス及び原料を加熱及び急冷−することによ
り純イヒ処理することを特徴とする、溶融塩法による人
工ベリル単結晶の合成方法。
PeriJ oxide showing the composition ratio of Haboberyl A raw material made by adding coloring agents such as aluminum oxide, silicon dioxide, and chromium oxide, as well as nonazine pentoxide and monopden as a flux. In the method of synthesizing or growing an artificial beryl single crystal by adding one or more selected acids, tungstic acid, and heating to a temperature higher than the melting temperature of the bath agent to form a bath molten salt, a single flux is used. Alternatively, a method for synthesizing an artificial beryl single crystal by a molten salt method, which is characterized in that a slack and a raw material are heated and rapidly cooled to perform a purification treatment.
JP21047281A 1981-12-25 1981-12-25 Synthesis of artificial beryl single crystal Pending JPS58115094A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21047281A JPS58115094A (en) 1981-12-25 1981-12-25 Synthesis of artificial beryl single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21047281A JPS58115094A (en) 1981-12-25 1981-12-25 Synthesis of artificial beryl single crystal

Publications (1)

Publication Number Publication Date
JPS58115094A true JPS58115094A (en) 1983-07-08

Family

ID=16589899

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21047281A Pending JPS58115094A (en) 1981-12-25 1981-12-25 Synthesis of artificial beryl single crystal

Country Status (1)

Country Link
JP (1) JPS58115094A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5412120A (en) * 1977-06-28 1979-01-29 Kubo Seisakusho Underrneedle type variousskind sewing machine with two threads

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5412120A (en) * 1977-06-28 1979-01-29 Kubo Seisakusho Underrneedle type variousskind sewing machine with two threads

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