JPS58114597U - semiconductor control device - Google Patents
semiconductor control deviceInfo
- Publication number
- JPS58114597U JPS58114597U JP1982010239U JP1023982U JPS58114597U JP S58114597 U JPS58114597 U JP S58114597U JP 1982010239 U JP1982010239 U JP 1982010239U JP 1023982 U JP1023982 U JP 1023982U JP S58114597 U JPS58114597 U JP S58114597U
- Authority
- JP
- Japan
- Prior art keywords
- control device
- semiconductor
- semiconductor device
- semiconductor control
- current flowing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は本考案番=よる半導体装置のブロック図1、第
2図は本考案による制御回路の具体的へ回路図、第3図
および第5図は不揮発性半導体素子に印加する本考案に
よる電圧制御回路の二つの異った実、施の態様の回路図
、゛第4図および第6図はそれぞれ第3図および第4図
の中の不揮発性メーモリ部の回路図である。
1.2.3.4.5.6・・・ノード、11・・・電源
、12・・・制御装置、13・・・制御しようとする半
導体装置、14・・・Xデコーダ、15・・・Yデコー
ダ、16・・・センスアンプ、17・・・書込み読出し
制御信号入力、18・・・出力、19・・・データ入力
。Fig. 1 is a block diagram of a semiconductor device according to the present invention number, Fig. 2 is a specific circuit diagram of a control circuit according to the present invention, and Figs. Circuit diagrams of two different embodiments of the voltage control circuit. FIGS. 4 and 6 are circuit diagrams of the nonvolatile memory section in FIGS. 3 and 4, respectively. 1.2.3.4.5.6...Node, 11...Power source, 12...Control device, 13...Semiconductor device to be controlled, 14...X decoder, 15... - Y decoder, 16... sense amplifier, 17... write/read control signal input, 18... output, 19... data input.
Claims (2)
絶縁膜中を流れる電流量を検出して、該半導体装置の動
作電圧の一部または全部を制御することを特徴とする半
導体制御装置。(1) In a semiconductor device provided within a semiconductor substrate,
A semiconductor control device that controls part or all of the operating voltage of the semiconductor device by detecting the amount of current flowing through an insulating film.
あるとき、その不揮発性記憶素子と実質上同じ特性を有
する素子の書込みまたは消去時に流れる電流量を検出し
て、書込みまたは消去電圧を制御することを特徴とする
、実用新案登録請求の範囲第1項記載の半導体制御装置
。(2) In a semiconductor device whose load includes a non-volatile memory element 1
Claim 1 of the utility model registration, which is characterized in that the amount of current flowing during writing or erasing of an element having substantially the same characteristics as the nonvolatile memory element is detected to control the writing or erasing voltage. The semiconductor control device described in .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1982010239U JPS58114597U (en) | 1982-01-29 | 1982-01-29 | semiconductor control device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1982010239U JPS58114597U (en) | 1982-01-29 | 1982-01-29 | semiconductor control device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58114597U true JPS58114597U (en) | 1983-08-05 |
Family
ID=30022896
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1982010239U Pending JPS58114597U (en) | 1982-01-29 | 1982-01-29 | semiconductor control device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58114597U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62146496A (en) * | 1985-12-20 | 1987-06-30 | Nec Corp | Non-volatile semiconductor memory device |
-
1982
- 1982-01-29 JP JP1982010239U patent/JPS58114597U/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62146496A (en) * | 1985-12-20 | 1987-06-30 | Nec Corp | Non-volatile semiconductor memory device |
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