JPS58110671A - Method and device for sputtering of mixed thin films - Google Patents

Abstract

PURPOSE:To form required mixed thin films having uniform component compsn. over the entire surface of a substrate, by placing the substrate to face target plates partially within the range where the respective targets exist while controlling the electric currents and voltages of respective sputtering sources separately thereby sputtering the targets. CONSTITUTION:Target plates 13, 13' of respectively different components are set to two pieces of sputtering sources 5, 5'. On the other hand, a substrate 14 of required material quality is set on a substrate holder 6, and the holder 6 is moved upward and downward to maintain the substrate 14 and the plates 13, 13' at required spacings. After the inside of a vacuum vessel 1 is evacuated, an inert gas such as Ar is sealed therein. Shutters 9 are rotated and are removed from the lower sides of the plates 13, 13'. The electric currents and voltages of the sources 5, 5' are controlled according to the respective plates 13, 13' and the substrate 14 is rotated integrally with a water-cooled reverse sputtering table 7 under rotation 8. Thereafter, high voltages are applied between the substrates 14 and the plates 13, 13' by the sources 5, 5' to sputter the plates 13, 13', whereby mixed thin films are formed on the rotating substrate 14 by mixing the required compsns. of the components of the plates 13, 13'.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for forming a thin film of an alloy of one metal, a thin film of a metal compound, or a compound of metals and metals on the surface of a metal, plastic, glass, ceramic, or other plate-like substrate (m<substrate). The present invention relates to a mixed thin film sputtering method and apparatus for forming a mixed thin film.

As a conventional method for forming an alloy film by sputtering, a method of sputtering using an alloy plate as a cathode target is well known.

However, with this method, it is extremely difficult to melt the component metals to produce an alloy plate with a special composition. Furthermore, the composition of the film will be somewhat different from that of the raw alloy plate due to the difference in sputter yield of the alloy component metals, so the alloy components must be adjusted in advance. Furthermore, target plates made of elements that are generally incompatible with each other, such as silver-nickel alloys commonly used as electrical contacts, must be made using powder metallurgy, making the manufacturing process complicated and time-consuming. This increases the cost of the target plate.゛The present invention has been made to solve these problems, and provides a mixed thin film sputtering method and an apparatus capable of forming a desired mixed thin film having a uniform composition over the entire surface on a substrate. It is.

The details of the mixed thin film sputtering method and apparatus of the present invention will be described below. First, an example of an apparatus for carrying out this method will be explained with reference to FIGS. 1 and 2. 1 is a vacuum chamber, a cylindrical container 2 and an upper! Form i3 and lower lid 4.

Two sputtering sources 5° 51 whose current and voltage can be adjusted are fixed to the upper lid 3 and arranged symmetrically in the soil part of the vacuum chamber 1, and one sputtering source is placed in the center of the lower part of the vacuum chamber 1. A substrate holder 6 is fixedly disposed on a water-cooled inverted sputtering table 7, and a rotating shaft 7m of the inverted sputtering table 70 passes through the lower lid 4 and is coupled to a motor 8 so as to be movable up and down. A shutter 9 is rotatably provided under each of the spatter 1N5.
It is supported through the QK, and a handle 11 is provided at the upper end. 12 is a motor cover.

To explain the mixed thin film sputtering method of the present invention using an apparatus having such a configuration, two sputter sources 5, 5' are used.
As shown in chain IIK, the target plates 13 each have different components.
．． 13', and on the other hand, set the substrate 14 of the required material on the substrate holder 6, and raise and lower the substrate holder 6 to remove the substrate 1.
4 and the target plate 13, 13' at the required distance.

Next, the inside of the vacuum chamber 1 is evacuated and then filled with an inert gas such as argon gas. Next, rotate the shutter 9 to remove it from the lower side of the targera) [113, 13', and remove the sputtering source 5.
. After that, the sputtering source 5.5' is used to remove the substrate 14 and the target plate 1.
3. Apply 13'MK high voltage and target plate 13.1
3' is sputtered, and the target plate 1 is sputtered onto the rotating substrate 14.
A mixed thin film is formed by mixing the components with a desired composition of 3°13'.

As a specific example of the mixed thin film sputtering method and apparatus of the present invention described above, the contact material Ag-Ni
A case will be described in which a mixed thin film of 1 is formed on a Cu substrate using one method of magnetron sputtering. Two sputter sources5.
5' K diameter 125m thickness 5mm Ag target plate 13
and diameter 12511J thick Ni target plate 1
3', and on the other hand, the substrate holder 6 has a diameter of 320 m,
Set Cu s*14 with a thickness of 3w, Ag and Ni
The distance between the target plates 13, 13' and the Cu substrate 14 is 8
The Cu substrate 14 was rotated at a speed of 78 times/min, and sputtering was performed under the following conditions.

0 Reverse sputtering process Argon gas pressure 3XIQ Torr high lit Wave force 3 o o Watt time 5
Minutes 0 sputtering 1 step Argon gas pressure 3X] OTorr Ag target plate side voltage 450v I Current 4A Ni Target plate side voltage 240vl Current 3A Time 4 hours 43 minutes or more 1)
A sputtered layer having a thickness of α2u was obtained on the Cu substrate 14. A quantitative analysis of this sputtered layer revealed that the weight of Ag-Ni was 14.5%.
It became. The size of the Ni particles could not be seen using both an optical microscope and a scanning electron microscope. As a result of XliN diffraction, only the Ag diffraction # appeared, and the Ni diffraction m did not appear.7 As a result of heat treating this material in H2 at 350°C for 10 minutes, the K became so that the diffraction lines of Ag and Ni could be clearly seen in VC. Ta.

In other words, the sputtered layer or thin film obtained on the Cu substrate 14 is A
This proves that g and Ni have a uniform composition over the entire surface.

This specific 'f! In the example, according to the test conditions described above, A
To obtain a thin film of 14.51 g-Ni, the current of the sputtering source applied to the Ag target plate and the Ni target plate,
By adjusting the voltage, thin films of other compositions such as At-NilG weight can be formed uniformly over the entire surface of the substrate. t
*Although the above embodiment is a case of sputter-down, it goes without saying that sputter-up is also possible. Further, in the above embodiment, a metal 6 alloy thin film is formed on a substrate, but if high frequency sputtering is used in combination, a metal compound thin film or a mixed metal thin film of a metal and a metal compound can be formed on a 4 substrate with an arbitrary composition. Be able to do it.

Note that the combination of the base 1114 and the target plates 13, 13' in the O mixed thin film sputtering method and apparatus of the present invention, that is, the positional relationship and number of both, are not limited to those shown in FIGS. 1 and 2 above. As shown in FIG. 3, it may be a combination of one rotating substrate 14 and three target plates 13.
Alternatively, as shown in FIG. 4, it may be a combination of four substrates 14 that rotate in zero motion and two target plates 13.degree. 13' placed at the center of the four substrates 14.

(Any combination in which at least one substrate moves while partially facing the target plates within the range where a plurality of target plates are located is sufficient. Therefore, the substrates can be rotated and moved as described above.) However, the present invention is not limited to only one movement, and may also be a reciprocating movement.

The mixed thin film sputtering method and apparatus of the present invention described in detail above adjusts the current and voltage of the sputtering source of each of the plurality of target plates according to the target plate, and at least within the range where each target plate is located. Since sputtering is carried out by moving one substrate while partially facing the target plate, a mixed thin film having a desired component composition can be easily and uniformly formed on the entire surface of the substrate. Therefore, it is troublesome to melt the component metals to create an alloy plate with a special composition as in the past, there is a difference in the sputter yield of the alloy component metals, there is a difference in composition between the raw material alloy plate and the resulting alloy thin film, and there is a problem in the production of the target plate. It is possible to eliminate all the problems of complicated processing, time consuming, and high cost, and it is useful for industrial polishing, and its effects are extremely large.

[Brief explanation of the drawing]

FIG. 1 is a schematic vertical cross-sectional view showing an example of a mixed thin film sputtering apparatus according to the present invention, FIG. 2 is a view taken along the line A-A in FIG. 1, and FIGS. FIG. 6 is a schematic diagram showing the positional relationship and number of target plates and substrates in another example of the sputtering apparatus. l...Vacuum chamber, 2...Cylindrical container, 3
...Top lid, 4--Bottom lid, s, s'...
・・・Sputter source, 6...Substrate holder, )・
・・・−・Water-cooled High Gyakusu/Kuta Ivy Table, 71−・・−
・i[JII, 8...Motor, 9...
Shutter, 9a...-rotation axis, 10-m-force/
Ku, 11...) 1 dollar, 12-------
Motor cuckoo, 13.13'. 13'...Target plate, 14-...Substrate. Applicant Tanaka Kikinzoku Kogyo Co., Ltd. Figure 1 Figure 2

Claims (1)

[Claims] l) The current and voltage of the sputtering source for each of the 11 targets are adjusted according to the target, and at least one substrate is partially opposed to the target within the range where each target is located. A mixed thin film sputtering method characterized by sputtering while moving the mixed thin film. 2) A plurality of sputtering sources whose currents and voltages can be adjusted, and a substrate which can be moved up and down within the range where the plurality of sputtering sources are located, and which can partially move horizontally while facing the sputtering sources. A mixed thin film sputtering device consisting of a holder and a vacuum chamber.