JPS5810975A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS5810975A JPS5810975A JP56108306A JP10830681A JPS5810975A JP S5810975 A JPS5810975 A JP S5810975A JP 56108306 A JP56108306 A JP 56108306A JP 10830681 A JP10830681 A JP 10830681A JP S5810975 A JPS5810975 A JP S5810975A
- Authority
- JP
- Japan
- Prior art keywords
- output
- output line
- shift register
- output terminal
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は固体テレビカメラに用いる画体撮像装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an image capturing device for use in a solid-state television camera.
一般に、光学的撮像画像を光電変換して電気信号に取り
出すための固体撮像素子は、１つのチップに数ｌＯ万個
のフォトダイオードを有し、各々が光電変換を行なって
電気信号を出力するため、素子からの出力信号は非常に
小さいものとなる。In general, a solid-state image sensor for photoelectrically converting an optically captured image and extracting it into an electrical signal has several tens of thousands of photodiodes on one chip, each of which performs photoelectric conversion and outputs an electrical signal. , the output signal from the element becomes very small.
一方、ノイズ成分としては、１１面命走査するべくシフ
トレジスタを駆動するクロックによるノイズ、および温
度依存性のある暗電流等の避けがたいものがあり、これ
によって出力信号のＳ／Ｎ比が低くかった。On the other hand, noise components include noise caused by the clock that drives the shift register to scan the 11 planes, and temperature-dependent dark current, which are unavoidable, resulting in a low S/N ratio of the output signal. won.
亭発−はこのような従来の間層を解決するもので、その
躊的とするところは、り四ツクノイズや暗電流によるノ
イズ成分を補償して８／Ｎ比の高い出力が得られるよう
な肩体撮鎗装置を提供することにある。Teihatsu is a solution to such conventional interlayer problems, and its mechanical aspect is to compensate for the noise components caused by noise and dark current, and to obtain an output with a high 8/N ratio. An object of the present invention is to provide a shoulder body imaging device.
閣は本実−の画体撮像装置の一実施例の回路構成図であ
る。固体撮像素子のチップ上には、マトリツタス状に多
数のフォトダイオードおよびＦＩＣ？トランジスタの履
会せからなる７オトダイオード１１Ｂ２１． ・・・
、ズ２．３１．・・・、３２が廖成されている。このフ
ォトダイオード部ではフォトダイオードで光電変換がな
され、その受光量に応じた電荷がトランジスタのスイッ
チ作用で出力されるようになっている。フォトダイオー
ド部２１．３１のＦ！〒トランジスタのドレインは膳直
信号纏１１１にて共通に水平走査のスイッチングを行な
うＦｌ’ｒ ）ランジスタ１１のソースに接続され、同
じくフォトダイオード部２２．３２のＰＫ’ｌ’ ）ラ
ンシスタのドレインは―電信ｆ＊ Ｉ ２にて共通にＦ
ＥＴ ）ランジスタ１２に接続されている。４はフォト
ダイオード部の各ＦＩＴ）ランジスタを喬直方崗に順次
ゲージオンさせて走査する垂直シフトレジスタ、５はＦ
Ｅ’ｌ’ ）ランジスタ１１゜１２を水平方向に順次ゲ
ートオンさせて走査する水平シフトレジスタである。こ
のようなａｍシフトレジスタ４．水平シフ）レジスタ５
の走査作用によって、フォトダイオード部２１〜３２に
発生した電荷はシリアンレに出力線１０１に流れ出力端
子６ａに出力される。This is a circuit configuration diagram of an embodiment of the actual image capturing device. On the solid-state image sensor chip, there are many photodiodes and FICs arranged in a matrices. 7 Otodiodes 11B21. consisting of a combination of transistors. ...
, Z2.31. ..., 32 have been completed. In this photodiode section, a photodiode performs photoelectric conversion, and a charge corresponding to the amount of received light is outputted by a switching action of a transistor. F of photodiode section 21.31! The drain of the transistor is connected to the source of the Fl'r) transistor 11 which commonly performs horizontal scanning switching in the direct signal line 111, and the drain of the PK'l' transistor of the photodiode section 22.32 is - Telegraph f* I Commonly F in 2
ET) connected to transistor 12. 4 is a vertical shift register that scans by sequentially turning on each FIT transistor in the photodiode section, and 5 is an F
E'l') This is a horizontal shift register in which transistors 11 and 12 are sequentially gated on in the horizontal direction for scanning. Such an am shift register 4. horizontal shift) register 5
Due to the scanning action, charges generated in the photodiode sections 21 to 32 flow serially to the output line 101 and are output to the output terminal 6a.
一方、補償出力線１０２は出力線１０１に近接して平行
に廖成され、その一端は出力端子６ｂに接続され、その
他端はＦＩＴ ）ランジスタ１１．１２と並んだＦｌｅ
〒トツンジス＃Ｔのドレインに接続されている。また、
このＦＥＴ ）ランジスタ ７のソースは出力１Ｉ９１
０１の負荷に１１当するダミー負荷８に接続されている
。９は出力端子６ｍ、＠ｂからの信号を入力して差動増
幅し出力端子１０に出力する差動増幅器である。On the other hand, the compensation output line 102 is formed in parallel to the output line 101, one end of which is connected to the output terminal 6b, and the other end of which is connected to the FIT transistors 11 and 12.
Connected to the drain of #T. Also,
The source of this FET) transistor 7 is output 1I91
It is connected to a dummy load 8 corresponding to 11 loads of 01. Reference numeral 9 denotes a differential amplifier that inputs signals from the output terminals 6m and @b, differentially amplifies them, and outputs them to the output terminal 10.
したがって、水平シフトレジスタ５から出力線１０１と
補償出力線１０２に誘導されるり四ツタノイズは、同一
極性にのるためにコモンモード成分となり出力端子１０
にはあられれない。また、両出力＠ １０１，１０２上
の暗電流も両出力線上を同一方向に流れるために出力端
子１０にはあられれない。この結果、出力端子１０には
フォトダイオード部から得られる光信号のみが出力信号
と出力される。Therefore, the noise induced from the horizontal shift register 5 to the output line 101 and the compensation output line 102 becomes a common mode component because it has the same polarity.
It can't happen. Further, the dark current on both outputs @ 101 and 102 also flows in the same direction on both output lines, so that it does not reach the output terminal 10. As a result, only the optical signal obtained from the photodiode section is outputted to the output terminal 10 as an output signal.
このように、本発明によると、出力線に近接してダミー
の補償出力線を設け、両出力を差動増幅器で増幅するこ
°とにより、走査駆動回路によるクリックノイズ、およ
び暗電流成分をキャンセルすることができ、出力信号の
８／Ｎ比を大幅に改曽し得るという効果がある。According to the present invention, click noise and dark current components caused by the scan drive circuit can be canceled by providing a dummy compensation output line close to the output line and amplifying both outputs with a differential amplifier. This has the effect of significantly improving the 8/N ratio of the output signal.
図は本発明に係る固体撮像装置の一実施例の回路構成図
である。
１１．１２，７・・・＊ＰＥＴ ）ランジスタ、２１．
２２．＄１．３２・・・・７オトダイオード郁 ４ ｓ
・・・―直シフ）レジスタ、Ｓ・・・・水平シフトレジ
スタ、８・・・・ダミー負荷、９・―・・差動増幅器。
第１頁の続き
０発 明 者 中西秀明
茂原市早野３３００番地株式会社日
立製作所茂原工場内The figure is a circuit configuration diagram of an embodiment of a solid-state imaging device according to the present invention. 11.12,7...*PET) transistor, 21.
22. $1.32...7 Otodiode Iku 4s
--- Direct shift register, S --- Horizontal shift register, 8 --- Dummy load, 9 --- Differential amplifier. Continued from page 1 0 Inventor: Hideaki Nakanishi, 3300 Hayano, Mobara City, Hitachi, Ltd., Mobara Factory
Claims (1)
線に近接して補償出力線を設け、この補償出力線にはダ
之−負荷を接続し、前記出力線と補償出力線の各出力信
号を差動増幅器にて増幅し、光信号を出力するようにし
た画体撮像装置。A compensation output line is provided close to the output line drawn out from the photodiode section of the solid-state image sensor, a load is connected to this compensation output line, and each output signal of the output line and the compensation output line is differentiated. An image capturing device that outputs an optical signal after amplifying it with a dynamic amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56108306A JPS5810975A (en) | 1981-07-13 | 1981-07-13 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56108306A JPS5810975A (en) | 1981-07-13 | 1981-07-13 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5810975A true JPS5810975A (en) | 1983-01-21 |
Family
ID=14481351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56108306A Pending JPS5810975A (en) | 1981-07-13 | 1981-07-13 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5810975A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100460057B1 (en) * | 2001-12-31 | 2004-12-04 | 비오이 하이디스 테크놀로지 주식회사 | An image sensor |
| JP2008064163A (en) * | 2006-09-06 | 2008-03-21 | Uchiyama Mfg Corp | Gasket |
-
1981
- 1981-07-13 JP JP56108306A patent/JPS5810975A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100460057B1 (en) * | 2001-12-31 | 2004-12-04 | 비오이 하이디스 테크놀로지 주식회사 | An image sensor |
| JP2008064163A (en) * | 2006-09-06 | 2008-03-21 | Uchiyama Mfg Corp | Gasket |
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