JPS5810819A - 液相エピタキシヤル成長方法 - Google Patents

液相エピタキシヤル成長方法

Info

Publication number
JPS5810819A
JPS5810819A JP56109690A JP10969081A JPS5810819A JP S5810819 A JPS5810819 A JP S5810819A JP 56109690 A JP56109690 A JP 56109690A JP 10969081 A JP10969081 A JP 10969081A JP S5810819 A JPS5810819 A JP S5810819A
Authority
JP
Japan
Prior art keywords
layer
growth
grown
wavelength
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56109690A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0257335B2 (enrdf_load_stackoverflow
Inventor
Kenshin Taguchi
田口　剣申
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56109690A priority Critical patent/JPS5810819A/ja
Publication of JPS5810819A publication Critical patent/JPS5810819A/ja
Publication of JPH0257335B2 publication Critical patent/JPH0257335B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Light Receiving Elements (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP56109690A 1981-07-14 1981-07-14 液相エピタキシヤル成長方法 Granted JPS5810819A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56109690A JPS5810819A (ja) 1981-07-14 1981-07-14 液相エピタキシヤル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56109690A JPS5810819A (ja) 1981-07-14 1981-07-14 液相エピタキシヤル成長方法

Publications (2)

Publication Number Publication Date
JPS5810819A true JPS5810819A (ja) 1983-01-21
JPH0257335B2 JPH0257335B2 (enrdf_load_stackoverflow) 1990-12-04

Family

ID=14516719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56109690A Granted JPS5810819A (ja) 1981-07-14 1981-07-14 液相エピタキシヤル成長方法

Country Status (1)

Country Link
JP (1) JPS5810819A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115274886A (zh) * 2022-09-02 2022-11-01 全磊光电股份有限公司 光电探测器的制备方法及光电探测器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115274886A (zh) * 2022-09-02 2022-11-01 全磊光电股份有限公司 光电探测器的制备方法及光电探测器

Also Published As

Publication number Publication date
JPH0257335B2 (enrdf_load_stackoverflow) 1990-12-04

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