JPS58102178A - X ray spectroscopy - Google Patents
X ray spectroscopyInfo
- Publication number
- JPS58102178A JPS58102178A JP56201383A JP20138381A JPS58102178A JP S58102178 A JPS58102178 A JP S58102178A JP 56201383 A JP56201383 A JP 56201383A JP 20138381 A JP20138381 A JP 20138381A JP S58102178 A JPS58102178 A JP S58102178A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectrons
- target
- kinetic energy
- ray
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/227—Measuring photoelectric effect, e.g. photoelectron emission microscopy [PEEM]
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Measurement Of Radiation (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はＸ線、特に波長的ココＯム以下の軟Ｘ線の波長
と強度を簡単に測定できるＸＩＩ分光法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an XII spectroscopy method that allows easy measurement of the wavelength and intensity of X-rays, particularly soft X-rays with a wavelength of less than 0.0 nm.
従来のＸＩＩＭ分光法は、■半導体検出器を用いるもの
１■回折結晶又は回折格子を用いるものに大別され、ざ
らに■は■回折結晶又は回折格子を四−ランド円上な移
動させつつ計るもの、［相］回折結晶又は回折格子を移
動させずにＸ［ｉ！感光フィルムをローランド円に沿っ
て設置するものにわけられる。ところで、これらＸ！１
分光法のうち、■は半導体検出器の応答速度が遅いため
にｔｐｓ＠ｃ 以下の短いパルス吠に放射されるＸＩｓ
の分光が不可能であるほか、波長ｌＯム以上のｘＩＩの
検出・分光ができない欠点がある。また■の■はパルス
Ｘ線の分光にきわめて長時間を要する欠点がある・また
更に■の＠は測定するｘｌＩの波長が長くなるに従って
回折結晶（又は回折格子）の焦点が伸びるために装置が
大形化する欠点がある。Conventional XIIM spectroscopy is roughly divided into two types: ■ Those that use a semiconductor detector, and (1) Those that use a diffraction crystal or diffraction grating. X[i!] without moving the [phase] diffraction crystal or diffraction grating. It can be divided into those in which the photosensitive film is placed along the Rowland circle. By the way, these X! 1
In spectroscopy, ■XIs is emitted in a short pulse of less than tps@c due to the slow response speed of the semiconductor detector.
In addition to being unable to perform spectroscopy, it also has the disadvantage of not being able to detect and spectroscopy xII with a wavelength of 10 nm or more. In addition, ■■ has the disadvantage that pulsed X-ray spectroscopy requires an extremely long time.Furthermore, ■■@ has the disadvantage that the focal point of the diffraction crystal (or diffraction grating) lengthens as the wavelength of xlI to be measured becomes longer, so the equipment is There is a drawback of increasing the size.
本発明は上記の事情に鑑み、パルス放射のＸ線、連続放
射のＸ＠を問わずに測定が可能であり、使用する装置の
小形化を計ることのできるＸ１１分光法を提供するもの
で、リチウム又はベリリウム又はほう素又は炭素よりな
るターゲラＦに分光すべきＸ＠を照射し、ターゲットよ
り放出する光電子の運動エネルギーおよび量を測定する
ことによりＸｉＩｉＩの波長ならびに強度を測定するこ
とを特徴とするものである。In view of the above-mentioned circumstances, the present invention provides an X11 spectroscopy method that can measure both pulsed radiation X-rays and continuous radiation X@, and allows for miniaturization of the equipment used. It is characterized by measuring the wavelength and intensity of XiIiI by irradiating Targetera F made of lithium, beryllium, boron, or carbon with X@ to be separated and measuring the kinetic energy and amount of photoelectrons emitted from the target. It is something.
以下、本発明を図面を参照して詳細に説明する。Hereinafter, the present invention will be explained in detail with reference to the drawings.
第１図は本発明の一実施例を示す図であって、この図に
おいてｌは分光すべきＸ５ＳＺは例えば炭素よりなるタ
ーゲット、８はターゲットから放出される光電子、４は
光電子の運動エネルギー弁別器、５は上記の部品をおさ
めた真空容器である。FIG. 1 is a diagram showing an embodiment of the present invention. In this figure, l indicates a target made of carbon, for example, X5SZ to be subjected to spectroscopy, 8 indicates photoelectrons emitted from the target, and 4 indicates a kinetic energy discriminator for the photoelectrons. , 5 is a vacuum container containing the above-mentioned parts.
この図において、Ｘ１ｌｌの照射をうけたターゲラ−は
光電子８を放出する。今ターゲツシにリチウムを遍んで
これに振動数νのＸ線を照射する場合を考える。リチウ
ムのに軌道の電子は通常ｊよｊｅＶの結合エネルギーで
リチウム原子核と結合して安定°状態を保っているが、
Ｘ線照射を受けるとＸ＠を吸収し、ｂ ｉ’−ｊｊ、ｊ
＝Ｂｋ （ｅＶ）の運動エネルギーを得て光電子とな
って真空中にとび出して来る。ＸＩＩが種々の振動数を
含んでいる場合には光電子の運動エネルギーＥｋもさま
ざまな値をとる。そこで光電子８を運動エネルギー弁別
器番に導いて運動エネルギーと光電子の量の関係をプロ
ットすれば第２図に示すようなＸＩＩの波長と強度の関
係が測定される。これらの測定は空気によるＸ＠の吸収
、光電子の散乱を防止する際し、運動エネルギー弁別器
として写真フィルムタイプのものを用いれば、Ｘ４！１
１が短いパルスの場合にも分光が可能である。In this figure, the targeter irradiated with X1ll emits photoelectrons 8. Let us now consider the case where lithium is spread over the target and irradiated with X-rays of frequency ν. The electrons in the orbit of lithium usually bond with the lithium nucleus with a binding energy of j to jeV and maintain a stable state.
When exposed to X-rays, it absorbs X@, b i'-jj, j
It gains a kinetic energy of =Bk (eV) and becomes a photoelectron and jumps out into the vacuum. When XII includes various frequencies, the kinetic energy Ek of photoelectrons also takes various values. Therefore, by introducing the photoelectrons 8 to a kinetic energy discriminator and plotting the relationship between the kinetic energy and the amount of photoelectrons, the relationship between the wavelength and intensity of XII as shown in FIG. 2 can be measured. In these measurements, when preventing the absorption of X@ by air and the scattering of photoelectrons, if a photographic film type device is used as a kinetic energy discriminator, X4!1
Spectroscopy is also possible when 1 is a short pulse.
この場合Ｘ＠ｂｉｂ ｗ ＜ ｊ ｊ、 ｊ ｅ Ｖ（
ＤＩｋ件ｅｌｌｔ場合、つまり波長がココ３ム以下の場
合には光電子は極端に減衰するのでリチウムを用いた場
合の測定可能波長域はココ３ム以下となる。In this case, X@bib w < j j, j e V(
In the case of DIk, that is, when the wavelength is less than 100 nm, photoelectrons are extremely attenuated, so when lithium is used, the measurable wavelength range is less than 300 nm.
同様にベリリウムのに軌道電子のベリリウム原子核との
結合エネルギーは／ ／ ／、 ｊ ｅ Ｖ％はう素の
に軌道電子のほう素原子核との結合エネルギーは／ｆＱ
ＪｅＶ、炭素のに軌道電子の炭素原子核との結合エネル
ギーはλｔａ≦ｅＶであり、ベリリウムをターゲットと
して用いた場合はｈν〉／／／、ｊｅＶｓつ＊’）波長
／／／Ａ以下の軟Ｘ＠。Similarly, the binding energy of beryllium's orbital electrons with the beryllium nucleus is / / /, j e V%, and the binding energy of boron's orbital electrons with the boron nucleus is /fQ
JeV, the bonding energy of the orbital electron of carbon with the carbon nucleus is λta≦eV, and when beryllium is used as a target, the soft X @ below the wavelength ///A .
はう素をターゲットとした場合はｈν〉／９Ｑ３ｅＶ。hν〉/9Q3eV when targeting halogen.
つまり波長／Ｉ／ム以下の軟Ｘ＠、炭素をターゲットと
した場合はｈν〉コｌ仏ぶｅＶ、つまり波長４ｃ３ム以
下の軟Ｘ線が分光可能である。In other words, soft X-rays with a wavelength of /I/m or less, and when carbon is used as a target, hv>col-eV, that is, soft X-rays with a wavelength of 4c3m or less can be spectrally analyzed.
また、Ｆより原子番号の大なる元素においては、Ｋ軌道
のほかにＬ軌道の電子の放出があって、ある１つのエネ
ルギーのＸＩＭに対して運動エネルギーの異なる光電子
が観測されるために分光は適さない。つまりＭｇを例に
とると、Ｋ軌道の電子は１０７２ｔｅＶ、Ｌ軌道電子は
６＆６０ｅＶの結合エネルギーで原子核と結合しており
、エネルギｂｙのｘｌｉ！照射によつ”（ｂｙ−ｔｏｙ
ｘｔｅｖとｈシー６３．６ｅＶの運動エネルギーの光電
子が放出される。また、オージェ効果によってｈシーＪ
ＯＱ９ｅＶの光電子も放出されるなど、７つのＸＩＩエ
ネルギーに対して三つの情報が出てくるので分光ができ
ない。In addition, in elements with an atomic number larger than F, electrons in the L orbit are emitted in addition to the K orbit, and photoelectrons with different kinetic energies are observed for one energy of XIM, so spectroscopy is difficult. Not suitable. In other words, taking Mg as an example, the electrons in the K orbital are bound to the atomic nucleus with a binding energy of 1072 teV, and the electrons in the L orbital are bound to the atomic nucleus with a binding energy of 6 and 60 eV, and the energy by xli! by-toy
Photoelectrons with a kinetic energy of xtev and hc of 63.6 eV are emitted. In addition, due to the Auger effect, hCJ
Since photoelectrons of OQ9eV are also emitted, three pieces of information are generated for seven XII energies, so spectroscopy is not possible.
以上説明したように、本発明は光電子の運動エネルギー
および量を測定することによってＸ＠の分光を行うもの
であるから、パルス放射のＸ＠。As explained above, since the present invention performs spectroscopy of X@ by measuring the kinetic energy and amount of photoelectrons, X@ of pulsed radiation.
連続放射のＸ線を問わずに軟Ｘｌｌ１ＩＳ超軟Ｘ線領域
の分光を行うことができ、かつ使用する装置の小杉化を
計ることができる等の利点がある。It has advantages such as being able to perform spectroscopy in the soft XllIS ultra-soft X-ray region regardless of continuous radiation X-rays, and allowing the use of Kosugi equipment.
図は同実施例においてＸ＠を分光した結果を示す図であ
ってＸｉＩの波長と強度との関係を示す図である。
ｌ・・・・・・Ｘ＠、２・・・・・・ターゲット、訃・
・・・・光電子、４・・・・・・運動エネルギー弁別器
、ト・・・・・真空容器。The figure is a diagram showing the result of spectroscopy of X@ in the same example, and is a diagram showing the relationship between the wavelength and intensity of XiI. l...X@, 2...Target, deceased...
...Photoelectron, 4...Kinetic energy discriminator, G...Vacuum container.
Claims (1)
Ｂ）又は炭素（Ｃ）よりなるターゲットに分光すべきＸ
ｉＩを照射し、ターゲットより放出する光電子の運動エ
ネルギーおよび量を測定することによりＸＩｓの波長な
らびに強度を測定することを特徴とするＸ＠分光法。Lithium (Li) or beryllium (Be) or boron (
B) or X to be dispersed into a target made of carbon (C)
An X@ spectroscopy method characterized by measuring the wavelength and intensity of XIs by irradiating iI and measuring the kinetic energy and amount of photoelectrons emitted from a target.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56201383A JPS58102178A (en) | 1981-12-14 | 1981-12-14 | X ray spectroscopy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56201383A JPS58102178A (en) | 1981-12-14 | 1981-12-14 | X ray spectroscopy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58102178A true JPS58102178A (en) | 1983-06-17 |
Family
ID=16440167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56201383A Pending JPS58102178A (en) | 1981-12-14 | 1981-12-14 | X ray spectroscopy |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58102178A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5483893A (en) * | 1977-11-29 | 1979-07-04 | Anvar | Microanalysis method that use xxrays radiation |
-
1981
- 1981-12-14 JP JP56201383A patent/JPS58102178A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5483893A (en) * | 1977-11-29 | 1979-07-04 | Anvar | Microanalysis method that use xxrays radiation |
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